VS-GB300LH120N www.vishay.com Vishay Semiconductors Molding Type Module IGBT, Chopper in 1 Package, 1200 V and 300 A FEATURES • Low VCE(on) SPT + IGBT technology • 10 μs short circuit capability • VCE(on) with positive temperature coefficient • Low inductance case • Fast and soft reverse recovery antiparallel FWD • Isolated copper baseplate using DCB (Direct Copper Bonding) technology Double INT-A-PAK • Material categorization: for definitions of compliance please see www.vishay.com/doc?99912 PRODUCT SUMMARY TYPICAL APPLICATIONS VCES 1200 V • Inverter for motor drive IC at TC = 80 °C 300 A • AC and DC servo drive amplifier VCE(on) (typical) at IC = 300 A, 25 °C 2.0 V • Uninterruptible power supply (UPS) Speed 8 kHz to 30 kHz Package Double INT-A-PAK Circuit Chopper low side switch DESCRIPTION Vishay’s IGBT power module provides ultra low conduction loss as well as short circuit ruggedness. It is designed for applications such as general inverters and UPS. ABSOLUTE MAXIMUM RATINGS (TC = 25 °C unless otherwise noted) PARAMETER SYMBOL TEST CONDITIONS MAX. Collector to emitter voltage VCES 1200 Gate to emitter voltage VGES ± 20 Collector current Pulsed collector current IC ICM (1) UNITS V TC = 25 °C 500 TC = 80 °C 300 tp = 1 ms 600 TC = 80 °C 300 A Diode continuous forward current IF Diode maximum forward current IFM tp = 1 ms 600 Maximum power dissipation PD TJ = 150 °C 1645 W Short circuit withstand time tSC TJ = 125 °C 10 μs 2500 V RMS isolation voltage VISOL f = 50 Hz, t = 1 min Note (1) Repetitive rating: pulse width limited by maximum junction temperature. Revision: 12-Jun-15 Document Number: 94784 1 For technical questions within your region: [email protected], [email protected], [email protected] THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000 VS-GB300LH120N www.vishay.com Vishay Semiconductors IGBT ELECTRICAL SPECIFICATIONS (TC = 25 °C unless otherwise noted) PARAMETER Collector to emitter breakdown voltage SYMBOL V(BR)CES Collector to emitter voltage VCE(on) Gate to emitter threshold voltage VGE(th) TEST CONDITIONS TJ = 25 °C MIN. TYP. MAX. 1200 - - VGE = 15 V, IC = 300 A, TJ = 25 °C - 2.0 - VGE = 15 V, IC = 300 A, TJ = 125 °C - 2.2 - VCE = VGE, IC = 12.0 mA, TJ = 25 °C 5.0 6.2 7.0 UNITS V Collector cut-off current ICES VCE = VCES, VGE = 0 V, TJ = 25 °C - - 5.0 mA Gate to emitter leakage current IGES VGE = VGES, VCE = 0 V, TJ = 25 °C - - 400 nA UNITS SWITCHING CHARACTERISTICS PARAMETER Turn-on delay time Rise time Turn-off delay time SYMBOL MIN. TYP. MAX. td(on) - 574 - tr - 133 - - 563 - td(off) TEST CONDITIONS VCC = 600 V, IC = 300 A, Rg = 4.7 , VGE = ± 15 V, TJ = 25 °C - 120 - Turn-on switching loss Eon - 23.9 - Turn-off switching loss Eoff - 25.3 - Turn-on delay time td(on) - 604 - tr - 137 - - 629 - Fall time Rise time Turn-off delay time Fall time tf td(off) tf VCC = 600 V, IC = 300 A, Rg = 4.7 , VGE = ± 15 V, TJ = 125 °C - 167 - Turn-on switching loss Eon - 31.5 - Turn-off switching loss Eoff - 35.9 - Input capacitance Cies Output capacitance Coes Reverse transfer capacitance Cres SC data ISC Internal gate resistance Rg Stray inductance Module lead resistance, terminal to chip VGE = 0 V, VCE = 25 V, f = 1.0 MHz tsc 10 μs, VGE = 15 V, TJ = 125 °C, VCC = 900 V, VCEM 1200 V LCE RCC’+EE’ TC = 25 °C ns mJ ns mJ - 21.2 - - 1.42 - - 0.94 - - 1800 - A - 1.0 - - - 20 nH - 0.35 - m UNITS nF DIODE ELECTRICAL SPECIFICATIONS (TC = 25 °C unless otherwise noted) PARAMETER SYMBOL Diode forward voltage VF Diode reverse recovery charge Qrr Diode peak reverse recovery current Irr Diode reverse recovery energy Erec TEST CONDITIONS IF = 300 A IF = 300 A, VR = 600 V, dIF/dt = -2360 A/μs, VGE = -15 V MIN. TYP. MAX. TJ = 25 °C - 1.82 2.25 TJ = 125 °C - 1.95 - TJ = 25 °C - 20.2 - TJ = 125 °C - 40.1 - TJ = 25 °C - 170 - TJ = 125 °C - 250 - TJ = 25 °C - 8.2 - TJ = 125 °C - 21.7 - V μC A mJ Revision: 12-Jun-15 Document Number: 94784 2 For technical questions within your region: [email protected], [email protected], [email protected] THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000 VS-GB300LH120N www.vishay.com Vishay Semiconductors THERMAL AND MECHANICAL SPECIFICATIONS PARAMETER SYMBOL MIN. TYP. MAX. TJ - - 150 TSTG -40 - 125 - - 0.076 - - 0.100 - 0.035 - Operating junction temperature Storage temperature range TEST CONDITIONS °C IGBT Junction to case Diode Case to sink RthJC Conductive grease applied RthCS Power terminal screw: M6 2.5 to 5.0 Mounting screw: M6 3.0 to 5.0 Mounting torque K/W Nm Weight 300 g 100 600 VGE = 15 V VCC = 600 V Rg = 4.7 Ω TJ = 125 °C VGE = ± 15 V 90 500 80 25 °C 70 Eon, Eoff (mJ) 400 IC (A) UNITS 300 125 °C 200 60 50 40 Eoff 30 Eon 20 100 10 0 0 0 0.5 1 1.5 2.5 2 3 3.5 0 4 200 300 400 500 IC (A) Fig. 1 - IGBT Typical Output Characteristics Fig. 3 - IGBT Switching Loss vs. IC 600 250 600 VCE = 20 V 500 VCC = 600 V IC = 300 A VGE = ± 15 V TJ = 125 °C Eon, Eoff (mJ) 200 400 IC (A) 100 VCE (V) 300 200 150 Eon 100 Eoff 125 °C 50 100 25 °C 0 0 6 7 8 9 10 11 12 13 0 10 20 30 40 VGE (V) Rg (Ω) Fig. 2 - IGBT Typical Transfer Characteristics Fig. 4 - IGBT Switching Loss vs. Rg 50 Revision: 12-Jun-15 Document Number: 94784 3 For technical questions within your region: [email protected], [email protected], [email protected] THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000 VS-GB300LH120N www.vishay.com Vishay Semiconductors 700 600 IC, Module 500 IC (A) 400 300 200 Rg = 4.7 Ω VGE = ± 15 V 100 TJ = 125 °C 0 0 300 600 900 1200 1500 VCE (V) Fig. 5 - RBSOA 10-1 ZthJC (K/W) IGBT 10-2 10-3 10-3 10-2 10-1 100 101 t (s) Fig. 6 - IGBT Transient Thermal Impedance 40 600 35 500 25 °C 30 E (mJ) IF (A) 400 125 °C 300 25 Erec 20 15 200 VCC = 600 V Rg = 4.7 Ω VGE = - 15 V TJ = 125 °C 10 100 5 0 0 0 0.5 1 1.5 2 2.5 3 0 100 200 300 400 500 VF (V) IF (A) Fig. 7 - Diode Typical Forward Characteristics Fig. 8 - Diode Switching Loss vs. IF 600 Revision: 12-Jun-15 Document Number: 94784 4 For technical questions within your region: [email protected], [email protected], [email protected] THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000 VS-GB300LH120N www.vishay.com Vishay Semiconductors 25 E (mJ) 20 15 Erec 10 VCC = 600 V IC = 300 A VGE = - 15 V 5 TJ = 125 °C 0 0 10 20 30 40 50 Rg (Ω) Fig. 9 - Diode Switching Loss vs. Rg ZthJC (K/W) 100 10-1 Diode 10-2 10-3 10-3 10-2 10-1 10-0 10-1 t (s) Fig. 10 - Diode Transient Thermal Impedance CIRCUIT CONFIGURATION 6 7 1 2 3 LINKS TO RELATED DOCUMENTS Dimensions www.vishay.com/doc?95525 Revision: 12-Jun-15 Document Number: 94784 5 For technical questions within your region: [email protected], [email protected], [email protected] THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000 Outline Dimensions www.vishay.com Vishay Semiconductors Double INT-A-PAK DIMENSIONS in millimeters (inches) 26 23 ± 0.3 6 7.2 ± 0.6 31 ± 0.5 2.8 x 0.5 16 3-M6 30.5 ± 0.5 Mounting depth max. 11 Ø 6. 4 ± 28 ± 0.3 28 ± 0.3 20.1 0. 2 6 22 35.4 27 ± 0.4 3 15 ± 0.4 2 30 48 ± 0.4 61.4 1 6 93 ± 0.4 106.4 Revision: 27-May-13 Document Number: 95525 1 For technical questions within your region: [email protected], [email protected], [email protected] THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000 Legal Disclaimer Notice www.vishay.com Vishay Disclaimer ALL PRODUCT, PRODUCT SPECIFICATIONS AND DATA ARE SUBJECT TO CHANGE WITHOUT NOTICE TO IMPROVE RELIABILITY, FUNCTION OR DESIGN OR OTHERWISE. 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We confirm that all the products identified as being compliant to IEC 61249-2-21 conform to JEDEC JS709A standards. Revision: 02-Oct-12 1 Document Number: 91000