VS-GB200TH120N www.vishay.com Vishay Semiconductors Molding Type Module IGBT, 2-in-1 Package, 1200 V and 200 A FEATURES • Low VCE(on) SPT+ IGBT technology • 10 μs short circuit capability • VCE(on) with positive temperature coefficient • Maximum junction temperature 150 °C • Low inductance case • Fast and soft reverse recovery antiparallel FWD Double INT-A-PAK • Isolated copper baseplate using DCB (Direct Copper Bonding) technology • Material categorization: for definitions of compliance please see www.vishay.com/doc?99912 PRODUCT SUMMARY VCES 1200 V TYPICAL APPLICATIONS IC at TC = 80 °C 200 A • UPS VCE(on) (typical) at IC = 200 A, 25 °C 1.90 V Speed 8 kHz to 30 kHz Package Double INT-A-PAK Circuit Half bridge • Inverter for motor drive • AC and DC servo drive amplifier DESCRIPTION Vishay’s IGBT power module provides ultra low conduction loss as well as short circuit ruggedness. It is designed for applications such as general inverters and UPS. ABSOLUTE MAXIMUM RATINGS (TC = 25 °C unless otherwise noted) PARAMETER SYMBOL TEST CONDITIONS MAX. Collector to emitter voltage VCES 1200 Gate to emitter voltage VGES ± 20 Collector current Pulsed collector current IC ICM (1) UNITS V TC = 25 °C 360 TC = 80 °C 200 tp = 1 ms 400 TC = 80 °C 200 A Diode continuous forward current IF Diode maximum forward current IFM tp = 1 ms 400 Maximum power dissipation PD TJ = 150 °C 1136 W tSC TJ = 125 °C 10 μs 2500 V Short circuit withstand time RMS isolation voltage VISOL f = 50 Hz, t = 1 min Note (1) Repetitive rating: pulse width limited by maximum junction temperature. Revision: 12-Jun-15 Document Number: 94763 1 For technical questions within your region: [email protected], [email protected], [email protected] THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000 VS-GB200TH120N www.vishay.com Vishay Semiconductors IGBT ELECTRICAL SPECIFICATIONS (TC = 25 °C unless otherwise noted) PARAMETER Collector to emitter breakdown voltage SYMBOL V(BR)CES TEST CONDITIONS TJ = 25 °C MIN. TYP. MAX. 1200 - - VGE = 15 V, IC = 200 A, TJ = 25 °C - 1.90 2.35 VGE = 15 V, IC = 200 A, TJ = 125 °C - 2.10 - 5.0 6.2 7.0 UNITS Collector to emitter voltage VCE(on) V Gate to emitter threshold voltage VGE(th) VCE = VGE, IC = 8.0 mA, TJ = 25 °C Collector cut-off current ICES VCE = VCES, VGE = 0 V, TJ = 25 °C - - 5.0 mA Gate to emitter leakage current IGES VGE = VGES, VCE = 0 V, TJ = 25 °C - - 400 nA UNITS SWITCHING CHARACTERISTICS PARAMETER Turn-on delay time Rise time Turn-off delay time SYMBOL MIN. TYP. MAX. td(on) - 437 - tr - 75 - - 436 - td(off) TEST CONDITIONS VCC = 600 V, IC = 200 A, Rg = 5.1 , VGE = ± 15 V, TJ = 25 °C - 165 - Turn-on switching loss Eon - 10.0 - Turn-off switching loss Eoff - 15.0 - Turn-on delay time td(on) - 445 - tr - 96 - - 488 - Fall time Rise time Turn-off delay time Fall time tf td(off) tf VCC = 600 V, IC = 200 A, Rg = 5.1 , VGE = ± 15 V, TJ = 125 °C - 258 - Turn-on switching loss Eon - 15.9 - Turn-off switching loss Eoff - 22.3 - Input capacitance Cies Output capacitance Coes Reverse transfer capacitance Cres SC data Internal gate resistance Stray inductance Module lead resistance, terminal to chip ISC VGE = 0 V, VCE = 25 V, f = 1.0 MHz tsc 10 μs, VGE = 15 V, TJ = 125 °C, VCC = 900 V, VCEM 1200 V Rgint LCE RCC’+EE’ TC = 25 °C ns mJ ns mJ - 14.9 - - 1.04 - - 0.68 - - 1200 - A - 1.0 - - - 20 nH - 0.35 - m UNITS nF DIODE ELECTRICAL SPECIFICATIONS (TC = 25 °C unless otherwise noted) PARAMETER SYMBOL Diode forward voltage VF Diode reverse recovery charge Qrr Diode peak reverse recovery current Irr Diode reverse recovery energy Erec TEST CONDITIONS IF = 200 A IF = 200 A, VR = 600 V, dI/dt = -2370 A/μs, VGE = -15 V MIN. TYP. MAX. TJ = 25 °C - 1.82 2.25 TJ = 125 °C - 1.95 - TJ = 25 °C - 16.6 - TJ = 125 °C - 29.2 - TJ = 25 °C - 156 - TJ = 125 °C - 210 - TJ = 25 °C - 9.3 - TJ = 125 °C - 16.0 - V μC A mJ Revision: 12-Jun-15 Document Number: 94763 2 For technical questions within your region: [email protected], [email protected], [email protected] THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000 VS-GB200TH120N www.vishay.com Vishay Semiconductors THERMAL AND MECHANICAL SPECIFICATIONS PARAMETER SYMBOL MIN. TYP. MAX. TJ - - 150 TSTG -40 - 125 - - 0.11 - - 0.14 - 0.035 - Operating junction temperature range Storage temperature range TEST CONDITIONS °C IGBT Junction to case Diode Case to sink RthJC RthCS Conductive grease applied Power terminal screw: M6 2.5 to 5.0 Mounting screw: M6 3.0 to 5.0 Mounting torque K/W Nm Weight 300 g 60 400 350 VCC = 600 V Rg = 5.1 Ω VGE = ± 15 V TJ = 125 °C 50 250 Eon, Eoff (mJ) 300 IC (A) UNITS 25 °C 200 125 °C 150 40 Eoff 30 Eon 20 100 10 50 VGE = 15 V 0 0 0 0.5 1 1.5 2 2.5 3 3.5 4 0 160 240 320 VCE (V) IC (A) Fig. 1 - IGBT Typical Output Characteristics Fig. 3 - IGBT Switching Loss vs. IC 400 120 400 VCC = 600 V IC = 200 A VGE = ± 15 V TJ = 125 °C VCE = 20 V 350 100 Eon, Eoff (mJ) 300 125 °C 250 IC (A) 80 200 25 °C 150 80 Eon 60 Eoff 40 100 20 50 0 0 4 5 6 7 8 9 10 11 12 0 10 20 30 40 VGE (V) Rg (Ω) Fig. 2 - IGBT Typical Transfer Characteristics Fig. 4 - IGBT Switching Loss vs. Rg 50 Revision: 12-Jun-15 Document Number: 94763 3 For technical questions within your region: [email protected], [email protected], [email protected] THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000 VS-GB200TH120N www.vishay.com Vishay Semiconductors 450 400 350 IC, module IC (A) 300 250 200 150 100 Rg = 5.1 Ω VGE = ± 15 V TJ = 125 °C 50 0 0 300 600 900 1200 1500 VCE (V) Fig. 5 - RBSOA ZthJC - Thermal Impedance (K/W) 100 IGBT 10-1 10-2 10-3 10-3 10-2 10-1 100 101 t (s) Fig. 6 - IGBT Transient Thermal Impedance 400 25 350 20 25 °C 300 Erec 200 E (mJ) IF (A) 250 125 °C 150 15 10 VCC = 600 V Rg = 5.1 Ω VGE = - 15 V TJ = 125 °C 100 5 50 0 0 0 0.5 1 1.5 2 2.5 3 0 80 160 240 320 VF (V) IF (A) Fig. 7 - Diode Typical Forward Characteristics Fig. 8 - Diode Switching Loss vs. IF 400 Revision: 12-Jun-15 Document Number: 94763 4 For technical questions within your region: [email protected], [email protected], [email protected] THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000 VS-GB200TH120N www.vishay.com Vishay Semiconductors 25 VCC = 600 V IC = 200 A VGE = - 15 V TJ = 125 °C E (mJ) 20 15 Erec 10 5 0 0 10 20 30 40 50 Rg (Ω) Fig. 9 - Diode Switching Loss vs. Gate Resistance Rg ZthJC (K/W) 1 0.1 Diode 0.01 0.001 0.001 0.01 0.1 1 10 t (s) Fig. 10 - Diode Transient Thermal Impedance CIRCUIT CONFIGURATION 6 7 1 2 3 5 4 LINKS TO RELATED DOCUMENTS Dimensions www.vishay.com/doc?95525 Revision: 12-Jun-15 Document Number: 94763 5 For technical questions within your region: [email protected], [email protected], [email protected] THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000 Outline Dimensions www.vishay.com Vishay Semiconductors Double INT-A-PAK DIMENSIONS in millimeters (inches) 26 23 ± 0.3 6 7.2 ± 0.6 31 ± 0.5 2.8 x 0.5 16 3-M6 30.5 ± 0.5 Mounting depth max. 11 Ø 6. 4 ± 28 ± 0.3 28 ± 0.3 20.1 0. 2 6 22 35.4 27 ± 0.4 3 15 ± 0.4 2 30 48 ± 0.4 61.4 1 6 93 ± 0.4 106.4 Revision: 27-May-13 Document Number: 95525 1 For technical questions within your region: [email protected], [email protected], [email protected] THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000 Legal Disclaimer Notice www.vishay.com Vishay Disclaimer ALL PRODUCT, PRODUCT SPECIFICATIONS AND DATA ARE SUBJECT TO CHANGE WITHOUT NOTICE TO IMPROVE RELIABILITY, FUNCTION OR DESIGN OR OTHERWISE. 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We confirm that all the products identified as being compliant to IEC 61249-2-21 conform to JEDEC JS709A standards. Revision: 02-Oct-12 1 Document Number: 91000