VS-GB100TH120N www.vishay.com Vishay Semiconductors Molding Type Module IGBT, 2-in-1 Package, 1200 V and 100 A FEATURES • Low VCE(on) SPT + IGBT technology • 10 μs short circuit capability • VCE(on) with positive temperature coefficient • Maximum junction temperature 150 °C • Low inductance case • Fast and soft reverse recovery antiparallel FWD • Isolated copper baseplate using DCB (Direct Copper Bonding) technology Double INT-A-PAK • Material categorization: for definitions of compliance please see www.vishay.com/doc?99912 TYPICAL APPLICATIONS PRODUCT SUMMARY VCES 1200 V IC at TC = 80 °C 100 A VCE(on) (typical) at IC = 100 A, 25 °C 1.90 V Speed 8 kHz to 30 kHz Package Double INT-A-PAK Circuit Half bridge • Inverter for motor drive • AC and DC servo drive amplifier • Uninterruptible power supply (UPS) DESCRIPTION Vishay’s IGBT power module provides ultra low conduction loss as well as short circuit ruggedness. It is designed for applications such as general inverters and UPS. ABSOLUTE MAXIMUM RATINGS (TC = 25 °C unless otherwise noted) PARAMETER SYMBOL TEST CONDITIONS MAX. Collector to emitter voltage VCES 1200 Gate to emitter voltage VGES ± 20 Collector current Pulsed collector current IC ICM (1) UNITS V TC = 25 °C 200 TC = 80 °C 100 tp = 1 ms 200 TC = 80 °C 100 A Diode continuous forward current IF Diode maximum forward current IFM tp = 1 ms 200 Maximum power dissipation PD TJ = 150 °C 833 W Short circuit withstand time tSC TJ = 125 °C 10 μs 2500 V RMS isolation voltage VISOL f = 50 Hz, t = 1 min Note (1) Repetitive rating: pulse width limited by maximum junction temperature. Revision: 10-Jun-15 Document Number: 94752 1 For technical questions within your region: [email protected], [email protected], [email protected] THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000 VS-GB100TH120N www.vishay.com Vishay Semiconductors IGBT ELECTRICAL SPECIFICATIONS (TC = 25 °C unless otherwise noted) PARAMETER Collector to emitter breakdown voltage SYMBOL V(BR)CES TEST CONDITIONS TJ = 25 °C MIN. TYP. MAX. 1200 - - VGE = 15 V, IC = 100 A, TJ = 25 °C - 1.9 2.35 VGE = 15 V, IC = 100 A, TJ = 125 °C - 2.1 - 5.0 6.2 7.0 UNITS Collector to emitter voltage VCE(on) V Gate to emitter threshold voltage VGE(th) VCE = VGE, IC = 4.0 mA, TJ = 25 °C Collector cut-off current ICES VCE = VCES, VGE = 0 V, TJ = 25 °C - - 5.0 mA Gate to emitter leakage current IGES VGE = VGES, VCE = 0 V, TJ = 25 °C - - 400 nA UNITS SWITCHING CHARACTERISTICS PARAMETER Turn-on delay time Rise time Turn-off delay time SYMBOL MIN. TYP. MAX. td(on) - 279 - tr - 61 - - 308 - td(off) TEST CONDITIONS VCC = 600 V, IC = 100 A, Rg = 5.6 , VGE = ± 15 V, TJ = 25 °C - 205 - Turn-on switching loss Eon - 5.56 - Turn-off switching loss Eoff - 6.95 - Turn-on delay time td(on) - 287 - tr - 63 - - 328 - - 360 - Fall time Rise time Turn-off delay time Fall time tf td(off) tf VCC = 600 V, IC = 100 A, Rg = 5.6 , VGE = ± 15 V, TJ = 125 °C Turn-on switching loss Eon - 7.85 - Turn-off switching loss Eoff - 10.55 - Input capacitance Cies Output capacitance Coes Reverse transfer capacitance Cres SC data Internal gate resistance Stray inductance Module lead resistance, terminal to chip ISC VGE = 0 V, VCE = 25 V, f = 1.0 MHz tsc 10 μs, VGE = 15 V, TJ = 125 °C, VCC = 900 V, VCEM 1200 V RGINT LCE RCC’+EE’ TC = 25 °C ns mJ ns mJ - 8.58 - - 0.60 - - 0.40 - - 600 - A - 5.0 - - - 20 nH - 0.35 - m UNITS nF DIODE ELECTRICAL SPECIFICATIONS (TC = 25 °C unless otherwise noted) PARAMETER SYMBOL Diode forward voltage VF Diode reverse recovery charge Qrr Diode peak reverse recovery current Irr Diode reverse recovery energy Erec TEST CONDITIONS IF = 100 A IF = 100 A, VR = 600 V, dI/dt = -2000 A/μs, VGE = -15 V MIN. TYP. MAX. TJ = 25 °C - 1.82 2.22 TJ = 125 °C - 1.95 - TJ = 25 °C - 5.5 - TJ = 125 °C - 11.9 - TJ = 25 °C - 85 - TJ = 125 °C - 103 - TJ = 25 °C - 2.07 - TJ = 125 °C - 5.56 - V μC A mJ Revision: 10-Jun-15 Document Number: 94752 2 For technical questions within your region: [email protected], [email protected], [email protected] THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000 VS-GB100TH120N www.vishay.com Vishay Semiconductors THERMAL AND MECHANICAL SPECIFICATIONS PARAMETER SYMBOL Operating junction temperature Storage temperature range TEST CONDITIONS MIN. TYP. MAX. TJ - - 150 TSTG -40 - 125 - - 0.150 - - 0.225 - 0.035 - °C IGBT Junction to case Diode Case to sink RthJC RthCS Conductive grease applied Power terminal screw: M6 2.5 to 5.0 Mounting screw: M6 3.0 to 5.0 Mounting torque 300 200 g 30 VCC = 600 V Rg = 5.6 Ω VGE = ± 15 V TJ = 125 °C 180 25 160 EON, EOFF (mJ) 25 °C 140 120 IC (A) K/W Nm Weight 125 °C 100 80 60 40 20 15 Eoff 10 Eon 5 VGE = 15 V 20 0 0 0 0.5 1 1.5 2 2.5 3 0 3.5 50 100 150 200 VCE (V) IC (A) Fig. 1 - IGBT Typical Output Characteristics Fig. 3 - IGBT Switching Loss vs. IC 40 200 VCE = 20 V 175 VCC = 600 V IC = 100 A VGE = ± 15 V TJ = 125 °C 35 150 30 EON, EOFF (mJ) IC (A) UNITS 125 °C 125 100 25 °C 75 25 Eon 20 15 50 10 25 5 Eoff 0 0 5 6 7 8 9 10 11 12 13 0 10 20 30 40 50 VGE (V) Rg (Ω) Fig. 2 - IGBT Typical Transfer Characteristics Fig. 4 - IGBT Switching Loss vs. Rg 60 Revision: 10-Jun-15 Document Number: 94752 3 For technical questions within your region: [email protected], [email protected], [email protected] THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000 VS-GB100TH120N www.vishay.com Vishay Semiconductors 220 200 180 IC, Module 160 IC (A) 140 120 100 80 60 Rg = 5.6 Ω VGE = ± 15 V TJ = 125 °C 40 20 0 0 300 600 900 1200 1500 VCE (V) Fig. 5 - RBSOA 100 ZthJC (K/W) IGBT 10-1 10-2 10-3 10-2 10-1 100 101 t (s) Fig. 6 - IGBT Transient Thermal Impedance 200 10 9 175 8 150 7 25 °C E (mJ) IF (A) 125 100 125 °C 75 Erec 6 5 4 VCC = 600 V Rg = 5.6 Ω VGE = - 15 V TJ = 125 °C 3 50 2 25 1 0 0 0 0.5 1 1.5 2 2.5 3 0 50 100 150 VF (V) IF (A) Fig. 7 - Diode Typical Forward Characteristics Fig. 8 - Diode Switching Loss vs. IF 200 Revision: 10-Jun-15 Document Number: 94752 4 For technical questions within your region: [email protected], [email protected], [email protected] THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000 VS-GB100TH120N www.vishay.com Vishay Semiconductors 8 VCC = 600 V IC = 100 A VGE = - 15 V TJ = 125 °C 7 6 E (mJ) 5 EREC 4 3 2 1 0 0 10 20 30 40 50 60 Rg (Ω) Fig. 9 - Diode Switching Loss vs. Rg 100 ZthJC (K/W) DIODE 10-1 10-2 10-3 10-2 10-1 100 101 t (s) Fig. 10 - Diode Transient Thermal Impedance CIRCUIT CONFIGURATION 6 7 1 2 3 5 4 LINKS TO RELATED DOCUMENTS Dimensions www.vishay.com/doc?95525 Revision: 10-Jun-15 Document Number: 94752 5 For technical questions within your region: [email protected], [email protected], [email protected] THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000 Outline Dimensions www.vishay.com Vishay Semiconductors Double INT-A-PAK DIMENSIONS in millimeters (inches) 26 23 ± 0.3 6 7.2 ± 0.6 31 ± 0.5 2.8 x 0.5 16 3-M6 30.5 ± 0.5 Mounting depth max. 11 Ø 6. 4 ± 28 ± 0.3 28 ± 0.3 20.1 0. 2 6 22 35.4 27 ± 0.4 3 15 ± 0.4 2 30 48 ± 0.4 61.4 1 6 93 ± 0.4 106.4 Revision: 27-May-13 Document Number: 95525 1 For technical questions within your region: [email protected], [email protected], [email protected] THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000 Legal Disclaimer Notice www.vishay.com Vishay Disclaimer ALL PRODUCT, PRODUCT SPECIFICATIONS AND DATA ARE SUBJECT TO CHANGE WITHOUT NOTICE TO IMPROVE RELIABILITY, FUNCTION OR DESIGN OR OTHERWISE. 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We confirm that all the products identified as being compliant to IEC 61249-2-21 conform to JEDEC JS709A standards. Revision: 02-Oct-12 1 Document Number: 91000