VS-GB300TH120U www.vishay.com Vishay Semiconductors Molding Type Module IGBT, 2-in-1 Package, 1200 V and 300 A FEATURES • 10 μs short circuit capability • VCE(on) with positive temperature coefficient • Maximum junction temperature 150 °C • Low switching losses • Rugged with ultrafast performance • Low inductance case • Fast and soft reverse recovery antiparallel FWD Double INT-A-PAK • Isolated copper baseplate using DCB (Direct Copper Bonding) technology • Material categorization: for definitions of compliance please see www.vishay.com/doc?99912 PRODUCT SUMMARY VCES 1200 V IC at TC = 80 °C 300 A VCE(on) (typical) at IC = 300 A, 25 °C 3.10 V • Inductive heating Speed 8 kHz to 30 kHz • Electronic welder Package Double INT-A-PAK Circuit Half bridge TYPICAL APPLICATIONS • Switching mode power supplies DESCRIPTION Vishay’s IGBT power module provides ultra low conduction loss as well as short circuit ruggedness. It is designed for applications such as electronic welder and inductive heating. ABSOLUTE MAXIMUM RATINGS (TC = 25 °C unless otherwise noted) PARAMETER SYMBOL TEST CONDITIONS MAX. Collector to emitter voltage VCES 1200 Gate to emitter voltage VGES ± 20 Collector current Pulsed collector current IC ICM (1) UNITS V TC = 25 °C 530 TC = 80 °C 300 tp = 1 ms 600 TC = 80 °C 300 A Diode continuous forward current IF Diode maximum forward current IFM tp = 1 ms 600 Maximum power dissipation PD TJ = 150 °C 2119 W Short circuit withstand time tSC TJ = 125 °C 10 μs 2500 V RMS isolation voltage VISOL f = 50 Hz, t = 1 min Note (1) Repetitive rating: pulse width limited by maximum junction temperature. Revision: 12-Jun-15 Document Number: 94751 1 For technical questions within your region: [email protected], [email protected], [email protected] THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000 VS-GB300TH120U www.vishay.com Vishay Semiconductors IGBT ELECTRICAL SPECIFICATIONS (TC = 25 °C unless otherwise noted) PARAMETER Collector to emitter breakdown voltage SYMBOL V(BR)CES TEST CONDITIONS TJ = 25 °C MIN. TYP. MAX. 1200 - - VGE = 15 V, IC = 300 A, TJ = 25 °C - 3.10 3.60 VGE = 15 V, IC = 300 A, TJ = 125 °C - 3.45 - 4.4 5.2 6.0 UNITS Collector to emitter voltage VCE(on) V Gate to emitter threshold voltage VGE(th) VCE = VGE, IC = 3.0 mA, TJ = 25 °C Collector cut-off current ICES VCE = VCES, VGE = 0 V, TJ = 25 °C - - 5.0 mA Gate to emitter leakage current IGES VGE = VGES, VCE = 0 V, TJ = 25 °C - - 400 nA UNITS SWITCHING CHARACTERISTICS PARAMETER Turn-on delay time Rise time Turn-off delay time SYMBOL MIN. TYP. MAX. td(on) - 662 - tr - 142 - - 633 - td(off) TEST CONDITIONS VCC = 600 V, IC = 300 A, Rg = 3.3 , VGE = ± 15 V, TJ = 25 °C - 117 - Turn-on switching loss Eon - 19.7 - Turn-off switching loss Eoff - 22.4 - Turn-on delay time td(on) - 660 - tr - 143 - - 665 - Fall time Rise time Turn-off delay time Fall time tf td(off) tf VCC = 600 V, IC = 300 A, Rg = 3.3 , VGE = ± 15 V, TJ = 125 °C - 137 - Turn-on switching loss Eon - 24.9 - Turn-off switching loss Eoff - 28.4 - Input capacitance Cies Output capacitance Coes Reverse transfer capacitance Cres SC data Internal gate resistance Stray inductance Module lead resistance, terminal to chip ISC VGE = 0 V, VCE = 30 V, f = 1.0 MHz tsc 10 μs, VGE = 15 V, TJ = 125 °C, VCC = 600 V, VCEM 1200 V Rgint LCE RCC’+EE’ TC = 25 °C ns mJ ns mJ - 25.3 - - 2.25 - - 0.91 - - 2550 - A - 1.2 - - - 18 nH - 0.32 - m UNITS nF DIODE ELECTRICAL SPECIFICATIONS (TC = 25 °C unless otherwise noted) PARAMETER SYMBOL Diode forward voltage VF Diode reverse recovery charge Qrr Diode peak reverse recovery current Irr Diode reverse recovery energy Erec TEST CONDITIONS IF = 300 A IF = 300 A, VR = 600 V, dI/dt = -2125 A/μs, VGE = -15 V MIN. TYP. MAX. TJ = 25 °C - 1.82 2.25 TJ = 125 °C - 1.95 - TJ = 25 °C - 21.5 - TJ = 125 °C - 32.4 - TJ = 25 °C - 178 - TJ = 125 °C - 225 - TJ = 25 °C - 10.4 - TJ = 125 °C - 16.6 - V μC A mJ Revision: 12-Jun-15 Document Number: 94751 2 For technical questions within your region: [email protected], [email protected], [email protected] THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000 VS-GB300TH120U www.vishay.com Vishay Semiconductors THERMAL AND MECHANICAL SPECIFICATIONS PARAMETER SYMBOL MIN. TYP. MAX. TJ - - 150 TSTG -40 - 125 - - 0.059 - - 0.107 - 0.035 - Operating junction temperature range Storage temperature range TEST CONDITIONS °C IGBT Junction to case RthJC Diode Case to sink RthCS Conductive grease applied Power terminal screw: M6 2.5 to 5.0 Mounting screw: M6 3.0 to 6.0 Mounting torque 300 g 100 600 VCC = 600 V Rg = 3.3 Ω VGE = ± 15 V TJ = 125 °C 90 500 80 300 Eon, Eoff (mJ) 25 °C 400 IC (A) K/W Nm Weight 125 °C 200 70 60 50 40 Eon 30 Eoff 20 100 VGE = 15 V 10 0 0 0 1 2 3 4 5 6 0 100 200 300 VCE (V) 400 500 600 IC (A) Fig. 1 - IGBT Typical Output Characteristics Fig. 3 - IGBT Switching Loss vs. IC 180 600 VCE = 20 V VCC = 600 V IC = 600 A VGE = ± 15 V TJ = 125 °C 160 500 EON, EOFF (mJ) 140 400 IC (A) UNITS 125 °C 300 200 25 °C 120 100 Eon 80 Eoff 60 40 100 20 0 0 5 6 7 8 9 10 11 VGE (V) Fig. 2 - IGBT Typical Transfer Characteristics 0 5 10 15 20 25 30 35 Rg (Ω) Fig. 4 - IGBT Switching Loss vs. Rg Revision: 12-Jun-15 Document Number: 94751 3 For technical questions within your region: [email protected], [email protected], [email protected] THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000 VS-GB300TH120U www.vishay.com Vishay Semiconductors 700 600 IC, module IC (A) 500 400 300 200 Rg = 3.3 Ω VGE = ± 15 V TJ = 125 °C 100 0 0 300 600 900 1200 1500 VCE (V) Fig. 5 - RBSOA ZthJC - Thermal Impedance (K/W) 1 0.1 IGBT 0.01 0.001 0.0001 0.001 0.1 0.01 1 t (s) Fig. 6 - IGBT Transient Thermal Impedance 35 600 30 500 25 °C 300 E (mJ) IF (A) 25 400 125 °C Erec 20 15 200 VCC = 600 V Rg = 3.3 Ω VGE = - 15 V TJ = 125 °C 10 100 5 0 0 0 0.5 1 1.5 2 2.5 3 0 100 200 300 400 500 VF (V) IF (A) Fig. 7 - Diode Typical Forward Characteristics Fig. 8 - Diode Switching Loss vs. IF 600 Revision: 12-Jun-15 Document Number: 94751 4 For technical questions within your region: [email protected], [email protected], [email protected] THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000 VS-GB300TH120U www.vishay.com Vishay Semiconductors 24 21 E (mJ) 18 15 Erec 12 9 VCC = 600 V IC = 300 A VGE = - 15 V TJ = 125 °C 6 3 0 0 5 10 15 20 25 30 35 Rg (Ω) Fig. 9 - Diode Switching Loss vs. Gate Resistance 1 ZthJC (K/W) Diode 0.1 0.01 0.001 0.001 0.01 0.1 1 10 t (s) Fig. 10 - Diode Transient Thermal Impedance CIRCUIT CONFIGURATION 6 7 1 2 3 5 4 LINKS TO RELATED DOCUMENTS Dimensions www.vishay.com/doc?95525 Revision: 12-Jun-15 Document Number: 94751 5 For technical questions within your region: [email protected], [email protected], [email protected] THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000 Outline Dimensions www.vishay.com Vishay Semiconductors Double INT-A-PAK DIMENSIONS in millimeters (inches) 26 23 ± 0.3 6 7.2 ± 0.6 31 ± 0.5 2.8 x 0.5 16 3-M6 30.5 ± 0.5 Mounting depth max. 11 Ø 6. 4 ± 28 ± 0.3 28 ± 0.3 20.1 0. 2 6 22 35.4 27 ± 0.4 3 15 ± 0.4 2 30 48 ± 0.4 61.4 1 6 93 ± 0.4 106.4 Revision: 27-May-13 Document Number: 95525 1 For technical questions within your region: [email protected], [email protected], [email protected] THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000 Legal Disclaimer Notice www.vishay.com Vishay Disclaimer ALL PRODUCT, PRODUCT SPECIFICATIONS AND DATA ARE SUBJECT TO CHANGE WITHOUT NOTICE TO IMPROVE RELIABILITY, FUNCTION OR DESIGN OR OTHERWISE. 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We confirm that all the products identified as being compliant to IEC 61249-2-21 conform to JEDEC JS709A standards. Revision: 02-Oct-12 1 Document Number: 91000