VS-GA100TS60SFPbF Datasheet

VS-GA100TS60SFPbF
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Vishay Semiconductors
“Half-Bridge” IGBT INT-A-PAK,
(Standard Speed IGBT), 100 A
FEATURES
• Standard speed PT IGBT technology
• Optimized for hard switching speed
• FRED Pt® antiparallel diodes with fast recovery
• Very low conduction losses
• Al2O3 DBC
• UL approved file E78996
• Designed for industrial level
• Material categorization: for definitions of compliance
please see www.vishay.com/doc?99912
INT-A-PAK
BENEFITS
• Optimized for high current inverter stages (AC TIG welding
machines)
PRODUCT SUMMARY
VCES
600 V
IC DC
220 A
• Direct mounting to heatsink
VCE(on) at 100 A, 25 °C
1.11 V
• Very low junction to case thermal resistance
Speed
DC to 1 kHz
Package
INT-A-PAK
Circuit
Half bridge
• Low EMI
ABSOLUTE MAXIMUM RATINGS
PARAMETER
Collector to emitter voltage
Continuous collector current
Pulsed collector current
SYMBOL
TEST CONDITIONS
MAX.
UNITS
600
V
VCES
IC
TC = 25 °C
220
TC = 130 °C
100
ICM
Peak switching current
ILM
440
Gate to emitter voltage
VGE
± 20
RMS isolation voltage
VISOL
Maximum power dissipation
Operating junction temperature range
Storage temperature range
PD
A
440
Any terminal to case, t = 1 min
2500
TC = 25 °C
780
TC = 100 °C
312
V
W
TJ
-40 to +150
TStg
-40 to +125
°C
ELECTRICAL SPECIFICATIONS (TJ = 25 °C unless otherwise specified)
PARAMETER
Collector to emitter breakdown voltage
Collector to emitter voltage
Gate threshold voltage
SYMBOL
VBR(CES)
VCE(on)
VGE(th)
Collector to emitter leakage current
ICES
Diode forward voltage drop
VFM
Gate to emitter leakage current
IGES
TEST CONDITIONS
MIN.
TYP.
MAX.
600
-
-
VGE = 15 V, IC = 100 A
-
1.11
1.28
IC = 200 A
-
1.39
-
VGE = 15 V, IC = 100 A, TJ = 125 °C
-
1.08
1.22
IC = 0.25 mA
3
-
6
VGE = 0 V, VCE = 600 V
-
-
1
VGE = 0 V, VCE = 600 V, TJ = 125 °C
-
-
10
VGE = 0 V, IC = 1 mA
IC = 100 A, VGE = 0 V
-
1.44
1.96
IC = 100 A, VGE = 0 V, TJ = 125 °C
-
1.25
1.54
VGE = ± 20 V
-
-
± 250
UNITS
V
mA
V
nA
Revision: 10-Jun-15
Document Number: 94544
1
For technical questions within your region: [email protected], [email protected], [email protected]
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
VS-GA100TS60SFPbF
www.vishay.com
Vishay Semiconductors
SWITCHING CHARACTERISTICS (TJ = 25 °C unless otherwise specified)
PARAMETER
SYMBOL
Total gate charge
Qg
Gate to emitter charge
Qge
Gate to collector charge
Qgc
Rise time
tr
Fall time
tf
Turn-on switching energy
Eon
Turn-off switching energy
Eoff
Total switching energy
Ets
Turn-on switching energy
Eon
Turn-off switching energy
Eoff
Total switching energy
Ets
Input capacitance
Cies
Output capacitance
Coes
Reverse transfer capacitance
Cres
Diode reverse recovery time
trr
Diode peak reverse current
Irr
Diode recovery charge
Qrr
Diode reverse recovery time
trr
Diode peak reverse current
Irr
Diode recovery charge
Qrr
TEST CONDITIONS
MIN.
TYP.
MAX.
-
640
700
-
108
120
-
230
300
-
0.45
-
-
1.0
-
IC = 100 A
VCC = 400 V
VGE = 15 V
IC = 100 A
VCC = 480 V
VGE = 15 V
Rg = 15 
TJ = 25 °C
UNITS
nC
μs
-
4
6
-
23
29
-
27
35
-
6
12
-
35
40
-
41
52
VGE = 0 V 
VCC = 30 V
f = 1.0 MHz
-
16 250
-
-
1040
-
-
190
-
IF = 50 A
dIF/dt = 200 A/μs
Vrr = 200 V
-
91
155
-
10.6
15
A
-
500
900
nC
IF = 50 A
dIF/dt = 200 A/μs
Vrr = 200 V, TJ = 125 °C
-
180
344
ns
-
17
20.5
A
-
1633
2315
nC
IC = 100 A, VCC = 480 V
VGE = 15 V, Rg = 15 
TJ = 125 °C
mJ
pF
ns
THERMAL AND MECHANICAL SPECIFICATIONS
PARAMETER
Operating junction temperature range
Storage temperature range
Junction to case
per switch
Weight
MIN.
TYP.
MAX.
TJ
-40
-
150
TStg
-40
-
125
-
-
0.16
-
-
0.48
-
0.1
-
case to heatsink
-
-
4
case to terminal 1, 2, 3
-
-
3
-
185
-
per diode
Case to sink per module
Mounting torque
SYMBOL
RthJC
RthCS
UNITS
°C
°C/W
Nm
g




Revision: 10-Jun-15
Document Number: 94544
2
For technical questions within your region: [email protected], [email protected], [email protected]
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
VS-GA100TS60SFPbF
VCE - Collector-to-Emitter Voltage (V)
1000
VGE = 15 V
100
TJ = 25 °C
TJ = 125 °C
10
0.6
IC - Collector-to-Emitter Current (A)
Vishay Semiconductors
0.8
1
1.2
1.4
1.6
1.5
IC = 200 A
1.3
IC = 100 A
1.1
IC = 50 A
0.9
0.7
25
1.8
75
100
125
150
TJ - Junction Temperature (°C)
Fig. 1 - Typical Output Characteristics
Fig. 4 - Typical Collector to Emitter Voltage vs.
Junction Temperature
1000
TJ = 125 °C
100
TJ = 25 °C
10
VCE = 10 V
380 μs PULSE WIDTH
1
20
VCC = 400 V
IC = 100 A
15
10
5
0
5.5
6.5
7.5
0
8.5
100
200
300
400
500
600
700
Qg - Total Gate Charge (nC)
VGE - Gate-to-Emitter Voltage (V)
Fig. 5 - Typical Gate Charge vs. Gate to Emitter Voltage
Fig. 2 - Typical Transfer Characteristics
35
240
TJ = 25 °C, VCE = 480 V
VGE = 15 V, IC = 100 A
30
200
Switching Losses (mJ)
Maximum DC Collector Current (A)
50
VCE - Collector-to-Emitter Voltage (V)
VGE - Gate-to-Emitter Voltage (V)
IC - Collector-to-Emitter Current (A)
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160
120
80
40
Eoff
25
20
15
Eon
10
5
0
0
25
50
75
100
125
150
10
20
30
40
50
TC - Case Temperature (°C)
Rg - Gate Resistance (Ω)
Fig. 3 - Maximum Collector Current vs. Case Temperature
Fig. 6 - Typical Switching Losses vs. Gate Resistance
Revision: 10-Jun-15
Document Number: 94544
3
For technical questions within your region: [email protected], [email protected], [email protected]
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
VS-GA100TS60SFPbF
www.vishay.com
Vishay Semiconductors
1000
TJ = 125 °C
VCE = 480 V
VGE = 15 V
Rg = 15 Ω
50
VR = 200 V
Eoff
IF = 50 A, TJ = 125 °C
40
trr (ns)
Switching Losses (mJ)
60
30
IF = 50 A, TJ = 25 °C
20
Eon
10
0
0
40
80
120
10
100
160
1000
IC - Collector-to-Emitter Current (A)
dIFdt (A/μs)
Fig. 7 - Typical Switching Losses vs.
Collector to Emitter Current
Fig. 9 - Typical Reverse Recovery Time vs. dIF/dt
100
1000
VR = 200 V
IF = 50 A, TJ = 125 °C
TJ = 125 °C
100
IRRM (A)
IF - Instantaneous Forward Current (A)
100
10
10
IF = 50 A, TJ = 25 °C
TJ = 25 °C
1
100
1
0
0.5
1
1.5
2
2.5
1000
dIFdt (A/μs)
VFM - Forward Voltage Drop (V)
Fig. 8 - Maximum Forward Voltage Drop vs.
Instantaneous Forward Current
Fig. 10 - Typical Reverse Recovery Current vs. dIF/dt
10 000
VR = 200 V
Qrr (nC)
IF = 50 A, TJ = 125 °C
1000
IF = 50 A, TJ = 25 °C
100
100
1000
dIFdt (A/μs)
Fig. 11 - Typical Stored Charge vs. dIF/dt
Revision: 10-Jun-15
Document Number: 94544
4
For technical questions within your region: [email protected], [email protected], [email protected]
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
VS-GA100TS60SFPbF
www.vishay.com
Vishay Semiconductors
ORDERING INFORMATION TABLE
Device code
VS-
GA
100
T
S
60
S
F
PbF
1
2
3
4
5
6
7
8
9
1
-
Vishay Semiconductors product
2
-
Essential part number IGBT modules
3
4
-
Current rating (100 = 100 A)
5
-
Circuit configuration (T = Half bridge)
INT-A-PAK
6
-
Voltage code (60 = 600 V)
7
-
Speed/type (S = Standard speed IGBT)
8
-
Diode type
9
-
None = Standard production; PbF = Lead (Pb)-free
CIRCUIT CONFIGURATION
3
6
7
1
4
5
2
LINKS TO RELATED DOCUMENTS
Dimensions
www.vishay.com/doc?95173
Revision: 10-Jun-15
Document Number: 94544
5
For technical questions within your region: [email protected], [email protected], [email protected]
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
Outline Dimensions
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Vishay Semiconductors
INT-A-PAK IGBT
Ø 6.5
(Ø 0.25)
80 (3.15)
23 (0.91)
14.3
(0.56)
23 (0.91)
5 (0.20)
2.8 x 0.8
(0.11 x 0.03)
14.5
(0.57)
2
3
5
1
66 (2.60)
3 screws M6 x 10
4
35 (1.38)
7
6
17 (0.67)
29 (1.15)
28 (1.10)
9 (0.33)
30
(1.18)
7 (0.28)
DIMENSIONS in millimeters (inches)
37 (1.44)
94 (3.70)
Revision: 27-Mar-13
Document Number: 95173
1
For technical questions within your region: [email protected], [email protected], [email protected]
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
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Revision: 02-Oct-12
1
Document Number: 91000