VS-GP250SA60S www.vishay.com Vishay Semiconductors Insulated Gate Bipolar Transistor Trench PT IGBT, 600 V, 250 A Proprietary Vishay IGBT Silicon “L Series” FEATURES • Standard speed Trench PT IGBT • Fully isolated package • Very low internal inductance ( 5 nH typical) • Industry standard outline • UL approved file E78996 • Material categorization: for definitions of compliance please see www.vishay.com/doc?99912 SOT-227 PRODUCT SUMMARY VCES 600 V IC DC (1) 239 A at 90 °C VCE(on) typical at 100 A, 25 °C 1.10 V Speed DC to 1 kHz Package SOT-227 Circuit Single switch no diode BENEFITS • Optimized for high current inverter stages (AC TIG welding machine) • Direct mounting to heatsink • Plug-in compatible with other SOT-227 packages • Lower conduction losses • Low EMI, requires less snubbing Note (1) Maximum continuous collector current 100 A to do not exceed the maximum temperature of terminals ABSOLUTE MAXIMUM RATINGS PARAMETER SYMBOL Collector to emitter voltage VCES Continuous collector current IC Pulsed collector current TEST CONDITIONS MAX. UNITS 600 V TC = 25 °C 380 TC = 90 °C 239 ICM Clamped inductive load current ILM 400 Gate-to-emitter voltage VGE ± 20 Power dissipation, IGBT Isolation voltage PD VISOL A 600 TC = 25 °C 893 TC = 90 °C 429 Any terminal to case, t = 1 min 2500 V W V ELECTRICAL SPECIFICATIONS (TJ = 25 °C unless otherwise specified) PARAMETER Collector to emitter breakdown voltage Collector to emitter voltage Gate threshold voltage SYMBOL VBR(CES) VCE(on) VGE(th) Temperature coefficient of threshold voltage VGE(th)/TJ Collector to emitter leakage current ICES Gate to emitter leakage current IGES MIN. TYP. MAX. VGE = 0 V, IC = 250 μA TEST CONDITIONS 600 - - VGE = 15 V, IC = 100 A - 1.10 1.30 VGE = 15 V, IC = 100 A, TJ = 125 °C - 1.03 - VGE = 15 V, IC = 100 A, TJ = 150 °C - 1.0 - VCE = VGE, IC = 3.2 mA 4.1 6.1 8.1 VCE = VGE, IC = 3.2 mA, TJ = 125 °C - 3.5 - VCE = VGE, IC = 3.2 mA, (25 °C to 125 °C) - -26 - VGE = 0 V, VCE = 600 V - 1.0 100 VGE = 0 V, VCE = 600 V, TJ = 125 °C - 350 - VGE = 0 V, VCE = 600 V, TJ = 150 °C - 700 - VGE = ± 20 V - - ± 350 UNITS V mV/°C μA nA Revision: 31-May-16 Document Number: 95766 1 For technical questions within your region: [email protected], [email protected], [email protected] THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000 VS-GP250SA60S www.vishay.com Vishay Semiconductors SWITCHING CHARACTERISTICS (TJ = 25 °C unless otherwise specified) PARAMETER SYMBOL TEST CONDITIONS MIN. TYP. MAX. - 942 - - 295 - Total gate charge (turn-on) Qg Gate to emitter charge (turn-on) Qge Gate to collector charge (turn-on) Qgc - 802 - Turn-on switching loss Eon - 2.2 - Turn-off switching loss Eoff - 11 - - 13.2 - - 300 - - 85 - - 515 - Total switching loss Etot Turn-on delay time td(on) Rise time Turn-off delay time Fall time Turn-on switching loss tr tf Eoff Etot Turn-on delay time td(on) Fall time Reverse bias safe operating area Energy losses include tail and diode recovery. diode used 60APH06 Eon Turn-off switching loss Turn-off delay time IC = 100 A, VCC = 480 V, VGE = 15 V, Rg = 5 L = 500 μH, TJ = 25 °C td(off) Total switching loss Rise time IC = 100 A, VCC = 400 V, VGE = 15 V tr IC = 100 A, VCC = 480 V, VGE = 15 V, Rg = 5 L = 500 μH, TJ = 125 °C td(off) tf RBSOA - 450 - - 2.6 - - 21.5 - - 24.1 - - 285 - - 85 - - 785 - - 790 - TJ = 150 °C, IC = 400, Rg = 5 VGE = 15 V to 0 V, VCC = 480 V, VP = 600 V, L = 500 μH UNITS nC mJ ns mJ ns Fullsquare THERMAL AND MECHANICAL SPECIFICATIONS PARAMETER Junction and storage temperature range SYMBOL TEST CONDITIONS TJ, TStg Junction to case RthJC Case to heatsink RthCS Case style TYP. MAX. UNITS -40 - 150 °C - - 0.14 Flat, greased surface - 0.1 - - 30 - g Torque to terminal - - 1.1 (9.7) Nm (lbf.in) Torque to heatsink - - 1.3 (11.5) Nm (lbf.in) Weight Mounting torque MIN. °C/W SOT-227 Revision: 31-May-16 Document Number: 95766 2 For technical questions within your region: [email protected], [email protected], [email protected] THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000 VS-GP250SA60S Vishay Semiconductors 160 350 140 300 VGE = 18 V VGE = 15 V 120 250 100 DC IC (A) Allowable Case Temperature (°C) www.vishay.com 80 200 VGE = 12 V 150 60 100 40 VGE = 9 V 50 20 0 0 0 100 200 300 400 0.4 0.6 0.8 1.0 1.2 1.4 1.6 1.8 2.0 IC - Continuous Collector Current (A) VCE (V) Fig. 1 - Maximum DC IGBT Collector Current vs. Case Temperature Fig. 4 - Typical Output Characteristics vs. VGE at 125 °C 350 350 VGE = 15V VGE = 18 V 300 300 250 250 200 200 IC (A) IC (A) VGE = 15 V 150 VGE = 12 V 150 TJ = 150 °C 100 100 TJ = 25 °C VGE = 9 V TJ = 125 °C 50 50 0 0 0.4 0.6 0.8 1.0 1.2 1.4 1.6 1.8 0.4 0.8 1.0 1.2 1.4 1.6 1.8 2.0 VCE (V) Fig. 2 - Typical IGBT Output Characteristics vs. VGE = 15 V Fig. 5 - Typical Output Characteristics vs. VGE at 150 °C 350 8 VGE = 18 V 300 VGE = 15 V 7 TJ = 25 °C 6 VGEth (V) 250 IC (A) 0.6 VCE (V) 200 150 5 TJ = 125 °C 4 VGE = 12 V 100 3 VGE = 9 V 50 2 0 1 0.4 0.6 0.8 1.0 1.2 1.4 1.6 1.8 2.0 0 0.5 1.0 1.5 2.0 2.5 3.0 3.5 VCE (V) IC (mA) Fig. 3 - Typical Output Characteristics vs. VGE at 25 °C Fig. 6 - Typical Gate Threshold Voltage Characteristics Revision: 31-May-16 Document Number: 95766 3 For technical questions within your region: [email protected], [email protected], [email protected] THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000 VS-GP250SA60S www.vishay.com Vishay Semiconductors 1 10 td(off) TJ = 150 °C 0.1 TJ = 125 °C 0.01 TJ = 25 °C 0.001 Switching Time (μs) ICE (mA) 1 tf 0.0001 0.1 tr 0.01 100 200 300 400 500 25 600 50 75 100 125 150 175 200 225 VCE (V) IC (A) Fig. 7 - Typical Zero Voltage Collector Current Fig. 10 - Typical IGBT Switching Time vs. IC TJ = 125 °C, VCC = 480 V, VGE = 15 V, L = 500 μH, Rg = 5 Diode used: 60APH06 60 1.5 1.4 Eoff 50 1.2 1.1 100 A 1.0 Energy (mJ) 200 A 1.3 VCE (V) td(on) 40 30 20 0.9 10 0.8 0.7 Eon 0 20 40 60 80 100 120 140 0 160 10 20 TJ (°C) 30 40 50 60 Rg (Ω) Fig. 11 - Typical IGBT Energy Losses vs. Rg TJ = 125 °C, IC = 200 A, VCC = 480 V, VGE = 15 V, L = 500 μH, Rg = 5 , Diode used: 60APH06 Fig. 8 - Typical VCE vs. Junction Temperature 50.0 10 Switching Time (μs) Energy (mJ) 40.0 Eoff 30.0 20.0 10.0 td(off) 1 tf tr Eon 0 td(on) 0.1 0 25 50 75 100 125 150 175 200 225 IC (A) Fig. 9 - Typical IGBT Energy Losses vs. IC TJ = 125 °C, VCC = 480 V, VGE = 15 V, L = 500 μH, Rg = 5 Diode used: 60APH06 0 10 20 30 40 50 60 Rg (Ω) Fig. 12 - Typical IGBT Switching Time vs. Rg TJ = 125 °C, IC = 200 A, VCC = 480 V, VGE = 15 V, L = 500 μH, Rg = 5 Diode used: 60APH06 Revision: 31-May-16 Document Number: 95766 4 For technical questions within your region: [email protected], [email protected], [email protected] THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000 VS-GP250SA60S www.vishay.com Vishay Semiconductors ZthJC - Thermal Impedance Junction to Case (°C/W) 1 0.1 0.75 0.50 0.25 0.10 0.05 0.02 DC 0.01 0.001 0.0001 0.001 0.01 0.1 1 Rectangular Pulse Duration (s) Fig. 13 - Maximum Thermal Impedance Characteristics 16 Vcc = 400V Ic = 100 A 14 12 L VGE (V) D.U.T. VC* 10 50 V 8 1000 V 6 1 2 4 2 * Driver same type as D.U.T.; VC = 80 % of VCE (max) 0 Note: Due to the 50 V power supply, pulse width and inductor will increase to obtain rated Id 0 200 400 600 800 1000 QG (nC) Fig. 14 - Typical Gate Charge vs. Gate Emitter Voltage Fig. 16a - Clamped Inductive Load Test Circuit 1000 IC (A) 100 RL = 10 0 V to 480 V 480 V 4 x IC at 25 °C 480 µF 960 V 1 0.1 1 10 100 1000 VCE (V) Fig. 15 - Reverse BIAS SOA, TJ = 150 °C, VGE = 15 V Fig. 16b - Pulsed Collector Current Test Circuit Revision: 31-May-16 Document Number: 95766 5 For technical questions within your region: [email protected], [email protected], [email protected] THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000 VS-GP250SA60S www.vishay.com Vishay Semiconductors IC L D.U.T. Driver* VC 50 V 1000 V 1 2 3 * Driver same type as D.U.T., VC = 480 V Fig. 17a - Switching Lost Test Circuit 1 2 90 % 10 % 3 VC 90 % td (off) 10 % IC 5% tf tr td (on) t = 5 µs Eoff Eon Ets = (Eon + Eoff) Fig. 17b - Switching Loss Waveforms ORDERING INFORMATION TABLE Device code VS- G P 250 S A 60 S 1 2 3 4 5 6 7 8 1 - Vishay Semiconductors product 2 - Insulated Gate Bipolar Transistor (IGBT) 3 - P = Trench PT IGBT 4 - Current rating (250 = 250 A) 5 - Circuit configuration (S = single switch, no diode) 6 - Package indicator (A = SOT-227) 7 - Voltage rating (60 = 600 V) 8 - Speed/type (S = standard speed) Revision: 31-May-16 Document Number: 95766 6 For technical questions within your region: [email protected], [email protected], [email protected] THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000 VS-GP250SA60S www.vishay.com Vishay Semiconductors CIRCUIT CONFIGURATION CIRCUIT CIRCUIT CONFIGURATION CODE CIRCUIT DRAWING 3 (C) Single switch, no diode Lead Assignment 4 3 1 2 S 2 (G) 1, 4 (E) LINKS TO RELATED DOCUMENTS Dimensions www.vishay.com/doc?95423 Packaging information www.vishay.com/doc?95425 Revision: 31-May-16 Document Number: 95766 7 For technical questions within your region: [email protected], [email protected], [email protected] THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000 Outline Dimensions www.vishay.com Vishay Semiconductors SOT-227 Generation II DIMENSIONS in millimeters (inches) 38.30 (1.508) 37.80 (1.488) Ø 4.10 (0.161) Ø 4.30 (0.169) -A- 4 x M4 nuts 6.25 (0.246) 6.50 (0.256) 12.50 (0.492) 13.00 (0.512) 25.70 (1.012) 24.70 (0.972) -B- 7.45 (0.293) 7.60 (0.299) 14.90 (0.587) 15.20 (0.598) R full 2.10 (0.083) 2.20 (0.087) 30.50 (1.200) 29.80 (1.173) 31.50 (1.240) 32.10 (1.264) 4x 2.20 (0.087) 1.90 (0.075) 8.30 (0.327) 7.70 (0.303) 0.25 (0.010) M C A M B M 4.10 (0.161) 4.50 (0.177) 12.30 (0.484) 11.70 (0.460) -C0.13 (0.005) 25.00 (0.984) 25.50 (1.004) Note • Controlling dimension: millimeter Revision: 02-Aug-12 Document Number: 95423 1 For technical questions within your region: [email protected], [email protected], [email protected] THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. 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