AUTOMOTIVE GRADE PD -96301 AUIRG4PH50S Standard Speed IGBT C INSULATED GATE BIPOLAR TRANSISTOR VCES =1200V Features Standard: Optimized for minimum saturation voltage and low operating frequencies (< 1kHz) Generation 4 IGBT design provides tighter parameter distribution and higher efficiency Industry standard TO-247AC package Lead-Free Automotive Qualified * VCE(on) typ. = 1.47V G E @VGE = 15V, IC = 33A n-channel C E C G Benefits Generation 4 IGBT's offer highest efficiency available IGBT's optimized for specified application conditions TO-247AC G Gate C Collector E Emitter Absolute Maximum Ratings Stresses beyond those listed under “Absolute Maximum Ratings” may cause permanent damage to the device. These are stress ratings only; and functional operation of the device at these or any other condition beyond those indicated in the specifications is not implied.Exposure to absolute-maximum-rated conditions for extended periods may affect device reliability. The thermal resistance and power dissipation ratings are measured under board mounted and still air conditions. Ambient temperature (T A) is 25°C, unless otherwise specified. Parameter VCES IC@ TC = 25°C IC@ TC = 100°C ICM ILM VGE EARV PD @ TC =25° PD @ TC =100° TJ TSTG Collector-to-Emitter Voltage Continuous Collector Current Continuous Collector Current Pulsed Collector Current Clamped Inductive Load Current c Units Max. 1200 57 33 114 114 ± 20 ± 30 270 200 80 d Gate-to-Emitter Voltage Transient Gate-to-Emitter Voltage Reverse Voltage Avalanche Energy e Maximum Power Dissipation Maximum Power Dissipation Operating Junction and Storage Temperature Range Soldering Temperature, for 10 sec. V A V mJ W -55 to + 150 °C 300 (0.063 in. (1.6mm) from case) Mounting Torque, 6-32 or M3 Screw. 10 lbf·in (1.1 N·m) Thermal Resistance Parameter RθJC RθCS RθJA Wt www.irf.com Junction-to-Case Case-to-Sink, Flat, Greased Surface Junction-to-Ambient, typical socket mount Weight Min. Typ. Max. — — 0.64 — 0.24 — — — 40 — 6.0(0.21) — Units °C/W g (oz) 1 04/13/10 AUIRG4PH50S Dynamic Electrical Characteristics @ TJ = 25°C (unless otherwise specified) Parameter Min. Typ. Collector-to-Emitter Breakdown Voltage 1200 — Emitter-to-Collector Breakdown Voltage 18 — ∆V(BR)CES/∆TJ Temperature Coeff. of Breakdown Voltage — 1.22 — 1.47 Collector-to-Emitter Saturation Voltage — 1.75 VCE(ON) — 1.55 VGE(th) Gate Threshold Voltage 3.0 — DVGE(th)/DTJ Temperature Coeff. of Threshold Voltage — -11 gfe Forward Transconductance 27 40 — — ICES Zero Gate Voltage Collector Current — — — — IGES Gate-to-Emitter Leakage Current — — V(BR)CES V(BR)ECS Max. Units Conditions — V VGE = 0V, IC = 250µA — V VGE = 0V, IC = 1.0 A — V/°C VGE = 0V, IC = 2.0 mA 1.7 IC = 33A VGE = 15V — IC = 57A See Fig.2, 5 V — IC = 33A , TJ = 150°C 6.0 VCE = VGE, IC = 250µA — mV/°C VCE = VGE, IC = 250µA — S VCE = 100V, IC = 33A 250 VGE = 0V, VCE = 1200V µA 2.0 VGE = 0V, VCE = 10V, TJ = 25°C 1000 VGE = 0V, VCE = 1200V, TJ = 150°C ±100 nA VGE = ±20V Static or Switching Electrical Characteristics @ TJ = 25°C (unless otherwise specified) Qg Qge Q gc td(on) tr td(off) tf Eon Eoff Ets td(on) tr td(off) tf Ets LE Cies Coes Cres Parameter Total Gate Charge (turn-on) Gate - Emitter Charge (turn-on) Gate - Collector Charge (turn-on) Turn-On Delay Time Rise Time Turn-Off Delay Time Fall Time Turn-On Switching Loss Turn-Off Switching Loss Total Switching Loss Turn-On Delay Time Rise Time Turn-Off Delay Time Fall Time Total Switching Loss Internal Emitter Inductance Input Capacitance Output Capacitance Reverse Transfer Capacitance Min. — — — — — — — — — — — — — — — — — — — Typ. 167 25 55 32 29 845 425 1.80 19.6 21.4 32 30 1170 1000 37 13 3600 160 30 Max. Units Conditions 251 IC = 33A 38 nC VCC = 400V See Fig. 8 83 VGE = 15V — — TJ = 25°C ns 1268 IC = 33A, VCC = 960V 638 VGE = 15V, RG = 5.0Ω — Energy losses include "tail" — mJ See Fig. 9, 10, 14 44 — TJ = 150°C, — IC = 33A, VCC = 960V ns — VGE = 15V, RG = 5.0Ω — Energy losses include "tail" — mJ See Fig. 10,11,14 — nH Measured 5mm from package — VGE = 0V — pF VCC = 30V See Fig. 7 — ƒ = 1.0MHz Notes: Repetitive rating; VGE = 20V, pulse width limited by max. junction temperature. ( See fig. 13b ) VCC = 80%(VCES), VGE = 20V, L = 10µH, RG = 5.0Ω, (See fig. 13a) Repetitive rating; pulse width limited by maximum Pulse width ≤ 80µs; duty factor ≤ 0.1%. Pulse width 5.0µs, single shot. junction temperature. 2 www.irf.com AUIRG4PH50S Qualification Information† Automotive (per AEC-Q101) Qualification Level Moisture Sensitivity Level Machine Model †† Comments: This part number(s) passed Automotive qualification. IR’s Industrial and Consumer qualification level is granted by extension of the higher Automotive level. TO-247AC N/A Class M3 AEC-Q101-002 ESD Human Body Model Class H2 AEC-Q101-001 Charged Device Model Class C4 AEC-Q101-005 RoHS Compliant Yes Qualification standards can be found at International Rectifiers web site: http//www.irf.com/ Exceptions to AEC-Q101 requirements are noted in the qualification report. www.irf.com 3 AUIRG4PH50S For both: Load Current (A) Triangular wave: Duty cycle: 50% TJ = 125°C Tsink= 90°C Gate drive as specified Power Dissipation = 40W 60 40 Clamp voltage: 80% of rated Square wave: 60% of rated voltage 20 Ideal diodes A 0 0.1 1 10 f, Frequency (kHz) Fig. 1 - Typical Load Current vs. Frequency (Load Current = IRMS of fundamental) I C, Collector-to-Emitter Current (A) TJ = 25 °C 100 100 TJ = 150 °C 10 1 0.0 V GE = 15V 80µs PULSE WIDTH 1.0 2.0 3.0 4.0 5.0 VCE , Collector-to-Emitter Voltage (V) Fig. 2 - Typical Output Characteristics 4 I C , Collector-to-Emitter Current (A) 1000 1000 TJ = 150 °C TJ = 25 °C 10 1 V CC = 50V 5µs PULSE WIDTH 5 6 7 8 9 10 11 12 VGE , Gate-to-Emitter Voltage (V) Fig. 3 - Typical Transfer Characteristics www.irf.com AUIRG4PH50S 2.5 VCE , Collector-to-Emitter Voltage(V) Maximum DC Collector Current(A) 60 50 40 30 20 10 0 25 50 75 100 125 150 VGE = 15V 80 us PULSE WIDTH IC = 66 A 2.0 IC = 33 A 1.5 IC =16.5 A 1.0 -60 -40 -20 TC , Case Temperature ( °C) 0 20 40 60 80 100 120 140 160 TJ , Junction Temperature ( °C) Fig. 4 - Maximum Collector Current vs. Case Temperature Fig. 5 - Typical Collector-to-Emitter Voltage vs. Junction Temperature Thermal Response (Z thJC ) 1 0.50 0.20 0.1 0.10 0.05 0.02 0.01 SINGLE PULSE (THERMAL RESPONSE) 0.01 PDM t1 t2 Notes: 1. Duty factor D = t 1 / t 2 2. Peak TJ = PDM x Z thJC + TC 0.001 0.00001 0.0001 0.001 0.01 0.1 1 t1 , Rectangular Pulse Duration (sec) Fig. 6 - Maximum Effective Transient Thermal Impedance, Junction-to-Case www.irf.com 5 AUIRG4PH50S 7000 Cies VGE , Gate-to-Emitter Voltage (V) C, Capacitance (pF) 6000 20 VGE = 0V, f = 1MHz Cies = Cge + Cgc , Cce SHORTED Cres = Cgc Coes = Cce + Cgc 5000 4000 Coes 3000 2000 Cres 1000 0 1 10 15 10 5 0 100 VCE , Collector-to-Emitter Voltage (V) Total Switching Losses (mJ) Total Switching Losses (mJ) 1000 V CC = 960V V GE = 15V TJ = 25 °C I C = 33A 23.0 22.0 0 10 20 30 40 , Gate Resistance RRGG, Gate Resistance ( Ω(Ohm) ) Fig. 9 - Typical Switching Losses vs. Gate Resistance 6 25 50 75 100 125 150 175 Fig. 8 - Typical Gate Charge vs. Gate-to-Emitter Voltage 24.0 21.0 0 QG , Total Gate Charge (nC) Fig. 7 - Typical Capacitance vs. Collector-to-Emitter Voltage 25.0 VCC = 400V I C = 33A 50 5Ω RG = 15Ω 5Ohm VGE = 15V VCC = 960V IC = 66 A 100 IC = 33 A IC = 16.5 A 10 1 -60 -40 -20 0 20 40 60 80 100 120 140 160 TJ , Junction Temperature (° C ) Fig. 10 - Typical Switching Losses vs. Junction Temperature www.irf.com AUIRG4PH50S RG TJ VCC 100 VGE 1000 = 55Ohm Ω = 150 ° C = 960V = 15V I C , Collector Current (A) Total Switching Losses (mJ) 120 VGE = 20V T J = 125 oC 100 80 60 40 10 20 0 0 10 20 30 40 50 60 I C , Collector Current (A) Fig. 11 - Typical Switching Losses vs. Collector-to-Emitter Current www.irf.com 70 1 SAFE OPERATING AREA 1 10 100 1000 10000 VCE , Collector-to-Emitter Voltage (V) Fig. 12 - Reverse Bias SOA 7 AUIRG4PH50S RL = VCC ICM L D.U.T. VC * 50V 1000V 0 - VCC c 480µF d * Driver same type as D.U.T.; Vc = 80% of Vce(max) * Note: Due to the 50V power supply, pulse width and inductor will increase to obtain rated Id. Pulsed Collector Current Test Circuit Fig. 13a - Clamped Inductive Fig. 13b - Pulsed Collector Load Test Circuit Current Test Circuit IC L Driver* VC D.U.T. Loss Test Circuit 50V 1000V c d Fig. 14a - Switching e * Driver same type as D.U.T., VC = ----V Fig. 14b - Switching Loss Waveforms 8 www.irf.com AUIRG4PH50S TO-247AC Package Outline Dimensions are shown in milimeters (inches) TO-247AC Part Marking Information Part Number AUG4PH50S YWWA IR Logo XX or Date Code Y= Year WW= Work Week A= Automotive, Lead Free XX Lot Code Note: For the most current drawing please refer to IR website at http://www.irf.com/package/ www.irf.com 9 AUIRG4PH50S Ordering Information Base part number AUIRG4PH50S 10 Package Type TO-247AC Standard Pack Form Tube Complete Part Number Quantity 25 AUIRG4PH50S www.irf.com IMPORTANT NOTICE AUIRG4PH50S Unless specifically designated for the automotive market, International Rectifier Corporation and its subsidiaries (IR) reserve the right to make corrections, modifications, enhancements, improvements, and other changes to its products and services at any time and to discontinue any product or services without notice. Part numbers designated with the “AU” prefix follow automotive industry and / or customer specific requirements with regards to product discontinuance and process change notification. All products are sold subject to IR’s terms and conditions of sale supplied at the time of order acknowledgment. IR warrants performance of its hardware products to the specifications applicable at the time of sale in accordance with IR’s standard warranty. Testing and other quality control techniques are used to the extent IR deems necessary to support this warranty. Except where mandated by government requirements, testing of all parameters of each product is not necessarily performed. IR assumes no liability for applications assistance or customer product design. Customers are responsible for their products and applications using IR components. To minimize the risks with customer products and applications, customers should provide adequate design and operating safeguards. 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Buyers acknowledge and agree that, if they use any non-designated products in automotive applications, IR will not be responsible for any failure to meet such requirements For technical support, please contact IR’s Technical Assistance Center http://www.irf.com/technical-info/ WORLD HEADQUARTERS: 233 Kansas St., El Segundo, California 90245 Tel: (310) 252-7105 www.irf.com 11