VS-GA250SA60S www.vishay.com Vishay Semiconductors Insulated Gate Bipolar Transistor Ultralow VCE(on), 250 A FEATURES • Standard: optimized for minimum saturation voltage and low speed • Lowest conduction losses available • Fully isolated package (2500 VAC) • Very low internal inductance (5 nH typical) • Industry standard outline SOT-227 • Designed and qualified for industrial level • UL approved file E78996 PRODUCT SUMMARY VCES VCE(on) (typical) at 200 A, 25 °C IC at TC = 90 °C • Material categorization: for definitions of compliance please see www.vishay.com/doc?99912 600 V 1.33 V (1) BENEFITS 250 A Speed • Designed for increased operating efficiency in power conversion: UPS, SMPS, TIG welding, induction heating DC to 1 kHz Package SOT-227 Circuit Single switch no diode • Easy to assemble and parallel • Direct mounting to heatsink Note (1) Maximum collector current admitted 100 A to do not exceed the maximum temperature of terminals • Plug-in compatible with other SOT-227 packages ABSOLUTE MAXIMUM RATINGS PARAMETER Collector to emitter voltage Continuous collector current Pulsed collector current SYMBOL VCES MAX. UNITS 600 V TC = 25 °C 400 TC = 90 °C 250 ICM Repetitive rating; VGE = 20 V, pulse width limited by maximum junction temperature 400 VCC = 80 % (VCES), VGE = 20 V, L = 10 μH, Rg = 2.0 IC (1) Clamped Inductive load current ILM Gate to emitter voltage VGE Power dissipation PD Isolation voltage TEST CONDITIONS VISOL A 400 ± 20 V TC = 25 °C 961 TC = 90 °C 462 Any terminal to case, t = 1 min 2500 V W Note (1) Maximum collector current admitted 100 A to do not exceed the maximum temperature of terminals THERMAL AND MECHANICAL SPECIFICATIONS PARAMETER MIN. TYP. MAX. UNITS TJ, TStg -40 - 150 °C Thermal resistance junction to case RthJC - - 0.13 Thermal resistance case to heatsink RthCS Flat, greased surface - 0.05 - - 30 - g Torque to terminal - - 1.1 (9.7) Nm (lbf.in) Torque to heatsink - - 1.3 (11.5) Nm (lbf.in) Junction and storage temperature range SYMBOL TEST CONDITIONS Weight Mounting torque Case style °C/W SOT-227 Revision: 20-May-16 Document Number: 94704 1 For technical questions within your region: [email protected], [email protected], [email protected] THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000 VS-GA250SA60S www.vishay.com Vishay Semiconductors ELECTRICAL SPECIFICATIONS (TJ = 25 °C unless otherwise noted) PARAMETER MIN. TYP. MAX. Collector to emitter breakdown voltage V(BR)CES VGE = 0 V, IC = 1 mA 600 - - Emitter to collector breakdown voltage V(BR)ECS (1) VGE = 0 V, IC = 1.0 A Collector to emitter voltage Gate threshold voltage Temperature coefficient of threshold voltage Collector to emitter leakage current Gate to emitter leakage current SYMBOL VCE(on) VGE(th) VGE(th)/TJ ICES IGES TEST CONDITIONS 18 - - IC = 100 A - 1.10 1.3 IC = 200 A - 1.33 1.66 - 1.02 - - 1.32 - IC = 100 A, TJ = 150 °C - 1.02 - IC = 200 A, TJ = 150 °C - 1.33 - VCE = VGE, IC = 250 μA IC = 100 A, TJ = 125 °C IC = 200 A, TJ = 125 °C VGE = 15 V UNITS V 3.0 4.5 6.0 VCE = VGE, IC = 250 μA, TJ = 125 °C - 3.1 - VCE = VGE, IC = 1 mA, 25 °C to 125 °C - -12 - mV/°C VGE = 0 V, VCE = 600 V - 20 1000 μA VGE = 0 V, VCE = 600 V, TJ = 125 °C - 0.2 - VGE = 0 V, VCE = 600 V, TJ = 150 °C - 0.6 10 VGE = ± 20 V - - ± 250 nA MIN. TYP. MAX. UNITS - 770 1200 - 100 150 - 260 380 mA Notes (1) Pulse width 80 μs; duty factor 0.1 % SWITCHING CHARACTERISTICS (TJ = 25 °C unless otherwise specified) PARAMETER Total gate charge (turn-on) SYMBOL TEST CONDITIONS Qg Gate-to-emitter charge (turn-on) Qge Gate-to-collector charge (turn-on) Qgc IC = 100 A, VCC = 600 V, VGE = 15 V Turn-on switching loss Eon - 0.55 - Turn-off switching loss Eoff TJ = 25 °C IC = 100 A VCC = 480 V VGE = 15 V - 25 - - 25.5 - - 267 - tr Rg = 5.0 - 42 - td(off) L = 500 μH - 310 - - 450 - - 0.67 - - 43.0 - - 43.7 - - 275 - - 50 - - 350 - - 700 - - 5.0 - - 16 250 - - 1040 - - 190 - Total switching loss Etot Turn-on delay time td(on) Rise time Turn-off delay time Fall time tf Turn-on switching loss Eon Turn-off switching loss Eoff Total switching loss Etot Turn-on delay time td(on) Rise time Turn-off delay time Fall time Internal emitter inductance tr TJ = 125 °C IC = 100 A VCC = 480 V VGE = 15 V Rg = 5.0 L = 500 μH Energy losses include tail and diode recovery. Diode used 60APH06 td(off) tf LE Input capacitance Cies Output capacitance Coes Reverse transfer capacitance Cres Between lead and center of die contact VGE = 0 V , VCC = 30 V, f = 1.0 MHz nC mJ ns mJ ns nH pF Revision: 20-May-16 Document Number: 94704 2 For technical questions within your region: [email protected], [email protected], [email protected] THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000 VS-GA250SA60S www.vishay.com Vishay Semiconductors 10 140 ICES - Collector Current (mA) Allowable Case Temperature (°C) 160 120 100 80 60 40 20 0 0 TJ = 150 °C 1 0.1 TJ = 125 °C 0.01 TJ = 25 °C 0.001 0.0001 100 50 100 150 200 250 300 350 400 450 500 200 300 400 500 600 VCE - Collector-to-Emitter Voltage (V) Fig. 4 - Typical IGBT Zero Gate Voltage Collector Current 6 1000 VGE = 15 V VGEth - Threshold Voltage (V) IC - Collector to Emitter Current (A) IC - Continuous Collector Current (A) Fig. 1 - Maximum DC IGBT Collector Current vs. Case Temperature 100 TJ = 150 °C TJ = 125 °C TJ = 25 °C 10 1 0.0 5.5 5 TJ = 25 °C 4.5 4 TJ = 125 °C 3.5 3 2.5 2 0.5 1.0 1.5 2.0 2.5 0.20 0.40 0.60 0.80 1.00 Fig. 2 - Typical Collector to Emitter Current Output Characteristics Fig. 5 - Typical IGBT Threshold Voltage 1000 100 TJ = 150 °C TJ = 125 °C 10 TJ = 25 °C 1 3.0 3.5 4.0 4.5 5.0 5.5 6.0 6.5 7.0 7.5 8.0 8.5 VGE - Gate to Emitter Voltage (V) Fig. 3 - Typical IGBT Transfer Characteristics VCE - Collector-to-Emitter Voltage (V) IC - Continuous Collector Current (mA) IC - Collector to Emitter Current (A) VCE - Collector to Emitter Voltage (V) 2.5 Ic = 400 A 2 1.5 Ic = 200 A 1 Ic = 100 A 0.5 0 20 40 60 80 100 120 140 160 TJ - Junction Temperature (°C) Fig. 6 - Typical IGBT Collector to Emitter Voltage vs. Junction Temperature, VGE = 15 V Revision: 20-May-16 Document Number: 94704 3 For technical questions within your region: [email protected], [email protected], [email protected] THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000 VS-GA250SA60S www.vishay.com Vishay Semiconductors 1000 Eoff Eoff 100 Energy Losses (mJ) Switching Energy (mJ) 1000 10 Eon 1 100 Eon 10 1 0.1 0.1 25 50 75 100 125 150 175 200 0 225 10 20 30 40 50 IC - Collector Current (A) Rg (Ω) Fig. 7 - Typical IGBT Energy Losses vs. IC, TJ = 125 °C, VCC = 480 V, VGE = 15 V, L = 500 μH, Rg = 5 , Diode used: 60APH06 Fig. 9 - Typical IGBT Energy Losses vs. Rg, TJ = 125 °C, IC = 200 A, VCC = 480 V, VGE = 15 V, L = 500 μH, Diode used: 60APH06 10 1 tf td(on) Switching Time (μs) Switching Time (μs) td(off) 0.1 tr 1 td(on) td(off) tf 0.1 tr 0.01 0.01 0 25 50 75 0 100 125 150 175 200 225 10 20 40 50 60 Rg (Ω) IC - Collector Current (A) Fig. 8 - Typical IGBT Switching Time vs. IC, TJ = 125 °C, VCC = 480 V, VGE = 15 V, L = 500 μH, Rg = 5 , Diode used: 60APH06 ZthJC - Thermal Impedance Junction to Case (°C/W) 30 Fig. 10 - Typical IGBT Switching Time vs. Rg, TJ = 125 °C, IC = 200 A, VCC = 480 V, VGE = 15 V, L = 500 μH, Diode used: 60APH06 1 0.1 0.75 0.50 0.25 0.1 0.05 0.02 DC 0.01 0.001 0.0001 0.001 0.01 0.1 1 10 Rectangular Pulse Duration (s) Fig. 11 - Maximum Thermal Impedance ZthJC Characteristics Revision: 20-May-16 Document Number: 94704 4 For technical questions within your region: [email protected], [email protected], [email protected] THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000 VS-GA250SA60S www.vishay.com Vishay Semiconductors 250 For both: Triangular wave: I Duty cycle: 50 % TJ = 125 °C Tsink = 90 °C Clamp voltage: Gate drive as specified 80 % of rated Power dissipation = 140 W Load Current (A) 200 150 Square wave: 60 % of rated voltage I 100 50 Ideal diodes 0 0.1 1 10 100 f - Frequency (kHz) Fig. 12 - Typical Load Current vs. Frequency (Load Current = IRMS of Fundamental) 20 VGE - Gate to Emitter Voltage (V) C - Capacitance (pF) 30 000 VGE = 0 V, f = 1 MHz Cies = Cge + Cgc, Cce shorted Cres = Cgc Coes = Cce + Cgc 24 000 Cies 18 000 Coes 12 000 6000 Cres VCC = 400 V IC = 100 A 16 12 8 4 0 0 1 10 100 0 200 400 600 800 VCE - Collector to Emitter Voltage (V) QG - Total Gate Charge (nC) Fig. 13 - Typical Capacitance vs. Collector to Emitter Voltage Fig. 14 - Typical Gate Charge vs. Gate to Emitter Voltage IC - Collector Current (A) 1000 VGE = 20 V TJ = 125 °C 100 10 Safe operating area 1 1 10 100 1000 VCE - Collector to Emitter Voltage (V) Fig. 15 - Turn-Off SOA Revision: 20-May-16 Document Number: 94704 5 For technical questions within your region: [email protected], [email protected], [email protected] THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000 VS-GA250SA60S www.vishay.com Vishay Semiconductors L D.U.T. VC* RL = 50 V 1000 V 0 V to 480 V 480 V 4 x IC at 25 °C 480 µF 960 V 1 2 * Driver same type as D.U.T.; VC = 80 % of VCE (max) Note: Due to the 50 V power supply, pulse width and inductor will increase to obtain rated Id Fig. 16a - Clamped Inductive Load Test Circuit Fig. 16b - Pulsed Collector Current Test Circuit IC L D.U.T. Driver* VC 50 V 1000 V 1 2 3 * Driver same type as D.U.T., VC = 480 V Fig. 17a - Switching Lost Test Circuit 1 2 90 % 10 % 3 VC 90 % td (off) 10 % IC 5% tf tr td (on) t = 5 µs Eoff Eon Ets = (Eon + Eoff) Fig. 17b - Switching Loss Waveforms Revision: 20-May-16 Document Number: 94704 6 For technical questions within your region: [email protected], [email protected], [email protected] THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000 VS-GA250SA60S www.vishay.com Vishay Semiconductors ORDERING INFORMATION TABLE Device code VS- G A 250 S A 60 S 1 2 3 4 5 6 7 8 1 - Vishay Semiconductors product 2 - Insulated Gate Bipolar Transistor (IGBT) 3 - Gen 4, IGBT silicon 4 - Current rating (250 = 250 A) 5 - Circuit configuration (S = single switch, without antiparallel diode) 6 - Package indicator (A = SOT-227) 7 - Voltage rating (60 = 600 V) 8 - Speed/type (S = standard speed) CIRCUIT CONFIGURATION CIRCUIT CIRCUIT CONFIGURATION CODE CIRCUIT DRAWING 3 (C) Single switch, no antiparallel diode S Lead Assignment 4 3 1 2 2 (G) 1, 4 (E) N-channel LINKS TO RELATED DOCUMENTS Dimensions www.vishay.com/doc?95423 Packaging information www.vishay.com/doc?95425 Revision: 20-May-16 Document Number: 94704 7 For technical questions within your region: [email protected], [email protected], [email protected] THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000 Outline Dimensions www.vishay.com Vishay Semiconductors SOT-227 Generation II DIMENSIONS in millimeters (inches) 38.30 (1.508) 37.80 (1.488) Ø 4.10 (0.161) Ø 4.30 (0.169) -A- 4 x M4 nuts 6.25 (0.246) 6.50 (0.256) 12.50 (0.492) 13.00 (0.512) 25.70 (1.012) 24.70 (0.972) -B- 7.45 (0.293) 7.60 (0.299) 14.90 (0.587) 15.20 (0.598) R full 2.10 (0.083) 2.20 (0.087) 30.50 (1.200) 29.80 (1.173) 31.50 (1.240) 32.10 (1.264) 4x 2.20 (0.087) 1.90 (0.075) 8.30 (0.327) 7.70 (0.303) 0.25 (0.010) M C A M B M 4.10 (0.161) 4.50 (0.177) 12.30 (0.484) 11.70 (0.460) -C0.13 (0.005) 25.00 (0.984) 25.50 (1.004) Note • Controlling dimension: millimeter Revision: 02-Aug-12 Document Number: 95423 1 For technical questions within your region: [email protected], [email protected], [email protected] THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. 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