VS-GB75TP120N www.vishay.com Vishay Semiconductors Molding Type Module IGBT 2-in 1-Package, 1200 V, 75 A FEATURES • High short circuit capability, self limiting to 6 x I • 10 μs short circuit capability • VCE(on) with positive temperature coefficient • Low inductance case • Fast and soft reverse recovery antiparallel FWD • Isolated copper baseplate using DCB (Direct Copper Bonding) technology INT-A-PAK • Material categorization: for definitions of compliance please see www.vishay.com/doc?99912 PRODUCT SUMMARY TYPICAL APPLICATIONS VCES 1200 V • AC inverter drivers IC at TC = 80 °C 75 A • Electronic welders VCE(on) (typical) at IC = 75 A, TJ = 25 °C 1.90 V Speed 8 kHz to 30 kHz Package INT-A-PAK Circuit Half bridge • Switching mode power supplies DESCRIPTION Vishay’s IGBT power module provides ultra low conduction loss as well as short circuit ruggedness. It is designed for applications such as general inverters and UPS. ABSOLUTE MAXIMUM RATINGS (TC = 25 °C unless otherwise noted) PARAMETER SYMBOL TEST CONDITIONS MAX. Collector to emitter voltage VCES 1200 Gate to emitter voltage VGES ± 20 Collector current Pulsed collector current IC ICM (1) Diode continuous forward current IF Diode maximum forward current IFM (1) TC = 25 °C 150 TC = 80 °C 75 tp = 1 ms 150 TC = 80 °C 75 UNITS V A tp = 1 ms 150 Maximum power dissipation PD TJ = 150 °C 543 W Short circuit withstand time TSC TJ = 125 °C 10 μs VR = 0 V, t = 10 ms, TJ = 125 °C 1050 A2s f = 50 Hz, t = 1 min 2500 V +150 °C I2t-value, diode RMS isolation voltage Maximum junction temperature VISOL TJ Note (1) Repetitive rating: pulse width limited by maximum junction temperature. IGBT ELECTRICAL SPECIFICATIONS (TC = 25 °C unless otherwise noted) PARAMETER Collector to emitter breakdown voltage SYMBOL V(BR)CES Collector to emitter voltage VCE(on) Gate to emitter threshold voltage TEST CONDITIONS VGE = 0 V, IC = 1.0 mA, TJ = 25 °C MIN. TYP. MAX. 1200 - - VGE = 15 V, IC = 75 A, TJ = 25 °C - 1.9 2.35 VGE = 15 V, IC = 75 A, TJ = 125 °C - 2.1 7.0 UNITS V VGE(th) VCE = VGE, IC = 3.0 mA, TJ = 25 °C 5.0 6.2 Collector cut-off current ICES VCE = VCES, VGE = 0 V, TJ = 25 °C - - 5.0 mA Gate to emitter leakage current IGES VGE = VGES, VCE = 0 V, TJ = 25 °C - - 400 nA Revision: 10-Jun-15 Document Number: 94712 1 For technical questions within your region: [email protected], [email protected], [email protected] THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000 VS-GB75TP120N www.vishay.com Vishay Semiconductors SWITCHING CHARACTERISTICS PARAMETER SYMBOL Turn-on delay time TEST CONDITIONS td(on) Rise time tr Turn-off delay time td(off) Fall time tf VCC = 600 V, IC = 75 A, Rg = 10 , VGE = ± 15 V, TJ = 25 °C MIN. TYP. MAX. - 305 - - 67 - - 328 - - 187 - Turn-on switching loss Eon - 6.74 - Turn-off switching loss Eoff - 4.25 - Turn-on delay time td(on) - 311 - tr - 67 - - 347 - Rise time Turn-off delay time td(off) Fall time tf VCC = 600 V, IC = 75 A, Rg = 10 , VGE = ± 15 V, TJ = 125 °C - 337 - Turn-on switching loss Eon - 9.75 - Turn-off switching loss Eoff - 7.05 - Input capacitance Cies Output capacitance Coes Reverse transfer capacitance Cres SC data ISC ns mJ ns mJ - 5.52 - VGE = 0 V, VCE = 25 V, f = 1.0 MHz, TJ = 25 °C - 0.40 - - 0.26 - ts 10 μs, VGE = 15 V, TJ = 125 °C, VCC = 900 V, VCEM 1200 V - 350 - RGINT - 3 - LCE - - 30 nH RCC’+EE’ - 0.75 - m UNITS Internal gate rsistance Stray inductance Module lead resistance, terminal to chip UNITS nF A DIODE ELECTRICAL SPECIFICATIONS (TC = 25 °C unless otherwise noted) PARAMETER SYMBOL Forward voltage VF Reverse recovery charge Qrr Peak reverse recovery current Irr Reverse recovery energy TEST CONDITIONS IF = 75 A IF = 75 A, VR = 600 V, dIF/dt = 1300 A/μs VGE = -15 V Erec MIN. TYP. MAX. TJ = 25 °C - 1.78 2.18 TJ = 125 °C - 1.85 - TJ = 25 °C - 4.0 - TJ = 125 °C - 9.3 - TJ = 25 °C - 55 - TJ = 125 °C - 73 - TJ = 25 °C - 2.98 - TJ = 125 °C - 4.46 - V μC A mJ THERMAL AND MECHANICAL SPECIFICATIONS PARAMETER SYMBOL Maximum junction temperature Storage temperature range Junction to case per ½ module IGBT Diode Case to sink (Conductive grease applied) Mounting torque Weight MIN. TYP. MAX. UNITS TJ TEST CONDITIONS - - 150 °C TStg -40 - 125 °C - - 0.23 - - 0.33 - 0.05 - RthJC RthCS Power terminal screw: M5 2.5 to 5.0 Mounting screw: M6 3.0 to 5.0 Weight of module - 150 K/W Nm - g Revision: 10-Jun-15 Document Number: 94712 2 For technical questions within your region: [email protected], [email protected], [email protected] THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000 VS-GB75TP120N www.vishay.com Vishay Semiconductors 30 150 VCC = 600 V Rg = 10 Ω VGE = ± 15 V TJ = 125 °C VGE = 15 V 25 125 20 25 °C E (mJ) IC (A) 100 75 125 °C 15 Eon 50 10 25 5 Eoff 0 0 0 0.5 1 1.5 2 2.5 3 3.5 0 25 50 75 VCE (V) 125 150 IC (A) Fig. 1 - IGBT Typical Output Characteristics Fig. 3 - IGBT Switching Loss vs. IC 40 150 VCE = 20 V 125 VCC = 600 V IC = 75 A VGE = ± 15 V TJ = 125 °C 35 30 100 25 Eon E (mJ) IC (A) 100 75 125 °C 20 15 50 Eoff 10 25 25 °C 5 0 0 6 7 8 9 10 11 12 0 13 20 40 60 80 100 Rg (Ω) VGE (V) Fig. 2 - IGBT Typical Transfer Characteristics Fig. 4 - IGBT Switching Loss vs. Rg 175 150 IC, Module IC (A) 125 100 75 50 Rg = 10 Ω VGE = ± 15 V TJ = 125 °C 25 0 0 250 500 750 1000 1250 1500 VCE (V) Fig. 5 - RBSOA Revision: 10-Jun-15 Document Number: 94712 3 For technical questions within your region: [email protected], [email protected], [email protected] THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000 VS-GB75TP120N www.vishay.com Vishay Semiconductors 100 ZthJC (K/W) IGBT 10-1 10-2 10-3 10-3 10-2 10-1 100 101 t (s) 150 6 125 5 100 4 E (mJ) IF (A) Fig. 6 - IGBT Transient Thermal Impedance 75 50 Erec 3 2 125 °C 25 VCC = 600 V Rg = 10 Ω VGE = - 15 V TJ = 125 °C 1 25 °C 0 0 0 0.4 0.8 1.2 1.6 2 0 2.4 25 50 75 100 125 VF (V) IF (A) Fig. 7 - Typical Diode Forward Characteristics Fig. 8 - Diode Switching Loss vs. IF 150 5 4.5 4 E (mJ) 3.5 Erec 3 2.5 2 1.5 VCC = 600 V IC = 75 A VGE = - 15 V TJ = 125 °C 1 0.5 0 0 20 40 60 80 100 Rg (Ω) Fig. 9 - Diode Switching Loss vs. Rg Revision: 10-Jun-15 Document Number: 94712 4 For technical questions within your region: [email protected], [email protected], [email protected] THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000 VS-GB75TP120N www.vishay.com Vishay Semiconductors 100 ZthJC (K/W) DIODE 10-1 10-2 10-3 10-2 10-1 100 101 t (s) Fig. 10 - Diode Transient Thermal Impedance CIRCUIT CONFIGURATION 6 7 1 2 3 5 4 LINKS TO RELATED DOCUMENTS Dimensions www.vishay.com/doc?95524 Revision: 10-Jun-15 Document Number: 94712 5 For technical questions within your region: [email protected], [email protected], [email protected] THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000 Outline Dimensions www.vishay.com Vishay Semiconductors INT-A-PAK DIMENSIONS in millimeters (inches) Revision: 06-Aug-12 Document Number: 95524 1 For technical questions within your region: [email protected], [email protected], [email protected] THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. 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