VS-GT400TH60N Datasheet

VS-GT400TH60N
www.vishay.com
Vishay Semiconductors
Molding Type Module IGBT,
2-in-1 Package, 600 V and 400 A
FEATURES
• Low VCE(on) trench IGBT technology
• Low switching losses
• 5 μs short circuit capability
• VCE(on) with positive temperature coefficient
• Maximum junction temperature 175 °C
• Low inductance case
• Fast and soft reverse recovery antiparallel FWD
Double INT-A-PAK
• Isolated copper baseplate using DCB (Direct Copper
Bonding) technology
• Material categorization: for definitions of compliance
please see www.vishay.com/doc?99912
PRODUCT SUMMARY
VCES
600 V
TYPICAL APPLICATIONS
IC at TC = 80 °C
400 A
• UPS
VCE(on) (typical)
at IC = 400 A, 25 °C
1.60 V
Speed
8 kHz to 30 kHz
Package
Double INT-A-PAK
Circuit
Half bridge
• Switching mode power supplies
• Electronic welders
DESCRIPTION
Vishay’s IGBT power module provides ultralow conduction
loss as well as short circuit ruggedness. It is designed for
applications such as UPS and SMPS.
ABSOLUTE MAXIMUM RATINGS (TC = 25 °C unless otherwise noted)
PARAMETER
SYMBOL
TEST CONDITIONS
MAX.
Collector to emitter voltage
VCES
600
Gate to emitter voltage
VGES
± 20
Collector current
Pulsed collector current
IC
ICM
(1)
UNITS
V
TC = 25 °C
530
TC = 80 °C
400
tp = 1 ms
800
A
400
Diode continuous forward current
IF
Diode maximum forward current
IFM
Maximum power dissipation
PD
TJ = 175 °C
1600
W
Short circuit withstand time
tSC
TJ = 125 °C
5
μs
I2t-value, diode
I2t
VR = 0 V, t = 10 ms, TJ = 125 °C
10 900
A2s
2500
V
RMS isolation voltage
VISOL
800
f = 50 Hz, t = 1 min
Note
(1) Repetitive rating: pulse width limited by maximum junction temperature.
Revision: 12-Jun-15
Document Number: 93488
1
For technical questions within your region: [email protected], [email protected], [email protected]
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
VS-GT400TH60N
www.vishay.com
Vishay Semiconductors
IGBT ELECTRICAL SPECIFICATIONS (TC = 25 °C unless otherwise noted)
PARAMETER
Collector to emitter breakdown voltage
SYMBOL
V(BR)CES
TEST CONDITIONS
VGE = 0 V, IC = 2 mA, TJ = 25 °C
MIN.
TYP.
MAX.
600
-
-
VGE = 15 V, IC = 400 A, TJ = 25 °C
-
1.6
2.05
VGE = 15 V, IC = 400 A, TJ = 175 °C
-
2.0
-
4.0
-
6.5
UNITS
Collector to emitter saturation voltage
VCE(on)
V
Gate to emitter threshold voltage
VGE(th)
VCE = VGE, IC = 4 mA, TJ = 25 °C
Zero gate voltage collector current
ICES
VCE = VCES, VGE = 0 V, TJ = 25 °C
-
-
5.0
mA
Gate to emitter leakage current
IGES
VGE = VGES, VCE = 0 V, TJ = 25 °C
-
-
400
nA
UNITS
SWITCHING CHARACTERISTICS
PARAMETER
Turn-on delay time
Rise time
Turn-off delay time
SYMBOL
MIN.
TYP.
MAX.
td(on)
-
35
-
tr
-
70
-
-
180
-
td(off)
TEST CONDITIONS
VCC = 400 V, IC = 400 A, Rg = 1.3 ,
VGE = ± 15 V, TJ = 25 °C
-
75
-
Turn-on switching loss
Eon
-
14.1
-
Turn-off switching loss
Eoff
-
10.0
-
Turn-on delay time
td(on)
-
37
-
tr
-
72
-
-
220
-
Fall time
Rise time
Turn-off delay time
Fall time
tf
td(off)
tf
VCC = 400 V, IC = 400 A, Rg = 1.3 ,
VGE = ± 15 V, TJ = 175 °C
-
84
-
Turn-on switching loss
Eon
-
23.2
-
Turn-off switching loss
Eoff
-
16.8
-
Input capacitance
Cies
Output capacitance
Coes
Reverse transfer capacitance
Cres
SC data
Internal gate resistance
Stray inductance
Module lead resistance, terminal to chip
ISC
VGE = 0 V, VCE = 30 V, f = 1.0 MHz
tsc  5 μs, VGE = 15 V, TJ = 125 °C, 
VCC = 360 V, VCEM  600 V
Rgint
LCE
RCC’+EE’
TC = 25 °C
ns
mJ
ns
mJ
-
30.8
-
-
2.12
-
-
0.92
-
-
TBD
-
A
-
1.3
-

-
-
20
nH
-
0.35
-
m
UNITS
nF
DIODE ELECTRICAL SPECIFICATIONS (TC = 25 °C unless otherwise noted)
PARAMETER
SYMBOL
Diode forward voltage
VF
Diode reverse recovery charge
Qrr
Diode peak reverse recovery current
Irr
Diode reverse recovery energy
Erec
TEST CONDITIONS
IF = 400 A
IF = 400 A, VR = 300 V,
dI/dt = -7000 A/μs,
VGE = -15 V
MIN.
TYP.
MAX.
TJ = 25 °C
-
1.38
1.80
TJ = 125 °C
-
1.41
-
TJ = 25 °C
-
15.5
-
TJ = 125 °C
-
28.5
-
TJ = 25 °C
-
265
-
TJ = 125 °C
-
335
-
TJ = 25 °C
-
3.5
-
TJ = 125 °C
-
7.5
-
V
μC
A
mJ
Revision: 12-Jun-15
Document Number: 93488
2
For technical questions within your region: [email protected], [email protected], [email protected]
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
VS-GT400TH60N
www.vishay.com
Vishay Semiconductors
THERMAL AND MECHANICAL SPECIFICATIONS
PARAMETER
SYMBOL
MIN.
TYP.
MAX.
TJ
-
-
175
TStg
-40
-
125
-
-
0.094
-
-
0.158
-
0.035
-
Operating junction temperature range
Storage temperature range
TEST CONDITIONS
°C
IGBT
Junction to case
per ½ module
RthJC
Diode
Case to sink
RthCS
Conductive grease applied
Power terminal screw: M6
2.5 to 5.0
Mounting screw: M6
3.0 to 5.0
Mounting torque
K/W
Nm
Weight
300
800
70
700
60
600
g
50
Eon, Eoff (mJ)
25 °C
500
IC (A)
UNITS
175 °C
400
300
40
Eon
Eoff
30
20
200
10
100
0
0
0
0.5
1.0
1.5
2.0
2.5
3.0
3.5
4.0
VCE (V)
93488_01
0
200
400
600
800
IC (A)
93488_03
Fig. 3 - IGBT Switching Loss vs. Collector Current
VCC = 600 V, Rg = 1.3 , VGE = ± 15 V, TJ = 175 °C
Fig. 1 - IGBT Typical Output Characteristics
VGE = 15 V
800
100
700
90
80
Eon, Eoff (mJ)
600
IC (A)
500
400
TJ = 175 °C
300
TJ = 25 °C
200
70
Eoff
60
50
Eon
40
30
20
100
10
0
0
3
93488_02
4
5
6
7
8
9
10
VGE (V)
Fig. 2 - IGBT Typical Transfer Characteristics
VCE = 20 V
0
93488_04
5
10
15
20
Rg (Ω)
Fig. 4 - Switching Loss vs. Gate Resistor
VCE = 600 V, IC = 400 A, VGE = ± 15 V, TJ = 175 °C
Revision: 12-Jun-15
Document Number: 93488
3
For technical questions within your region: [email protected], [email protected], [email protected]
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
VS-GT400TH60N
www.vishay.com
Vishay Semiconductors
900
800
IC, module
700
IC (A)
600
500
400
300
200
100
0
0
93488_05
100
200
300
400
500
600
700
VCE (V)
Fig. 5 - RBSOA
Rg = 1.3 , VGE = ± 15 V, TJ = 175 °C
ZthJC (K/W)
1
0.1
IGBT
0.01
0.001
0.001
0.01
0.1
1
10
t (s)
Fig. 6 - IGBT Transient Thermal Impedance
93488_06
12
800
700
10
600
8
E (mJ)
IC (A)
500
400
300
4
200
150 °C
2
25 °C
100
0
0
0
93488_07
Erec
6
0.5
1.0
1.5
VF (V)
Fig. 7 - Forward Characteristics of Diode
2.0
0
93488_08
200
400
600
800
IF (A)
Fig. 8 - Diode Switching Loss vs. IF
VCC = 600 V, Rg = 1.3 , VGE = - 15 V, TJ = 125 °C
Revision: 12-Jun-15
Document Number: 93488
4
For technical questions within your region: [email protected], [email protected], [email protected]
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
VS-GT400TH60N
www.vishay.com
Vishay Semiconductors
8
7
6
Erec
E (mJ)
5
4
3
2
1
0
0
2
4
6
8
10
12
Rg (Ω)
93488_09
Fig. 9 - Diode Switching Loss vs. Gate Resistance
VCC = 600 V, IC = 400 A, VGE = - 15 V, TJ = 125 °C
ZthJC (K/W)
1
0.1
Diode
0.01
0.001
0.001
93488_10
0.01
0.1
1
10
t (s)
Fig. 10 - Diode Transient Thermal Impedance
CIRCUIT CONFIGURATION
6
7
1
2
3
5
4
LINKS TO RELATED DOCUMENTS
Dimensions
www.vishay.com/doc?95525
Revision: 12-Jun-15
Document Number: 93488
5
For technical questions within your region: [email protected], [email protected], [email protected]
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
Outline Dimensions
www.vishay.com
Vishay Semiconductors
Double INT-A-PAK
DIMENSIONS in millimeters (inches)
26
23 ± 0.3
6
7.2 ± 0.6
31 ± 0.5
2.8 x 0.5
16
3-M6
30.5 ± 0.5
Mounting depth max. 11
Ø
6.
4
±
28 ± 0.3
28 ± 0.3
20.1
0.
2
6
22
35.4
27 ± 0.4
3
15 ± 0.4
2
30
48 ± 0.4
61.4
1
6
93 ± 0.4
106.4
Revision: 27-May-13
Document Number: 95525
1
For technical questions within your region: [email protected], [email protected], [email protected]
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
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Revision: 02-Oct-12
1
Document Number: 91000