VS-GT400TH60N www.vishay.com Vishay Semiconductors Molding Type Module IGBT, 2-in-1 Package, 600 V and 400 A FEATURES • Low VCE(on) trench IGBT technology • Low switching losses • 5 μs short circuit capability • VCE(on) with positive temperature coefficient • Maximum junction temperature 175 °C • Low inductance case • Fast and soft reverse recovery antiparallel FWD Double INT-A-PAK • Isolated copper baseplate using DCB (Direct Copper Bonding) technology • Material categorization: for definitions of compliance please see www.vishay.com/doc?99912 PRODUCT SUMMARY VCES 600 V TYPICAL APPLICATIONS IC at TC = 80 °C 400 A • UPS VCE(on) (typical) at IC = 400 A, 25 °C 1.60 V Speed 8 kHz to 30 kHz Package Double INT-A-PAK Circuit Half bridge • Switching mode power supplies • Electronic welders DESCRIPTION Vishay’s IGBT power module provides ultralow conduction loss as well as short circuit ruggedness. It is designed for applications such as UPS and SMPS. ABSOLUTE MAXIMUM RATINGS (TC = 25 °C unless otherwise noted) PARAMETER SYMBOL TEST CONDITIONS MAX. Collector to emitter voltage VCES 600 Gate to emitter voltage VGES ± 20 Collector current Pulsed collector current IC ICM (1) UNITS V TC = 25 °C 530 TC = 80 °C 400 tp = 1 ms 800 A 400 Diode continuous forward current IF Diode maximum forward current IFM Maximum power dissipation PD TJ = 175 °C 1600 W Short circuit withstand time tSC TJ = 125 °C 5 μs I2t-value, diode I2t VR = 0 V, t = 10 ms, TJ = 125 °C 10 900 A2s 2500 V RMS isolation voltage VISOL 800 f = 50 Hz, t = 1 min Note (1) Repetitive rating: pulse width limited by maximum junction temperature. Revision: 12-Jun-15 Document Number: 93488 1 For technical questions within your region: [email protected], [email protected], [email protected] THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000 VS-GT400TH60N www.vishay.com Vishay Semiconductors IGBT ELECTRICAL SPECIFICATIONS (TC = 25 °C unless otherwise noted) PARAMETER Collector to emitter breakdown voltage SYMBOL V(BR)CES TEST CONDITIONS VGE = 0 V, IC = 2 mA, TJ = 25 °C MIN. TYP. MAX. 600 - - VGE = 15 V, IC = 400 A, TJ = 25 °C - 1.6 2.05 VGE = 15 V, IC = 400 A, TJ = 175 °C - 2.0 - 4.0 - 6.5 UNITS Collector to emitter saturation voltage VCE(on) V Gate to emitter threshold voltage VGE(th) VCE = VGE, IC = 4 mA, TJ = 25 °C Zero gate voltage collector current ICES VCE = VCES, VGE = 0 V, TJ = 25 °C - - 5.0 mA Gate to emitter leakage current IGES VGE = VGES, VCE = 0 V, TJ = 25 °C - - 400 nA UNITS SWITCHING CHARACTERISTICS PARAMETER Turn-on delay time Rise time Turn-off delay time SYMBOL MIN. TYP. MAX. td(on) - 35 - tr - 70 - - 180 - td(off) TEST CONDITIONS VCC = 400 V, IC = 400 A, Rg = 1.3 , VGE = ± 15 V, TJ = 25 °C - 75 - Turn-on switching loss Eon - 14.1 - Turn-off switching loss Eoff - 10.0 - Turn-on delay time td(on) - 37 - tr - 72 - - 220 - Fall time Rise time Turn-off delay time Fall time tf td(off) tf VCC = 400 V, IC = 400 A, Rg = 1.3 , VGE = ± 15 V, TJ = 175 °C - 84 - Turn-on switching loss Eon - 23.2 - Turn-off switching loss Eoff - 16.8 - Input capacitance Cies Output capacitance Coes Reverse transfer capacitance Cres SC data Internal gate resistance Stray inductance Module lead resistance, terminal to chip ISC VGE = 0 V, VCE = 30 V, f = 1.0 MHz tsc 5 μs, VGE = 15 V, TJ = 125 °C, VCC = 360 V, VCEM 600 V Rgint LCE RCC’+EE’ TC = 25 °C ns mJ ns mJ - 30.8 - - 2.12 - - 0.92 - - TBD - A - 1.3 - - - 20 nH - 0.35 - m UNITS nF DIODE ELECTRICAL SPECIFICATIONS (TC = 25 °C unless otherwise noted) PARAMETER SYMBOL Diode forward voltage VF Diode reverse recovery charge Qrr Diode peak reverse recovery current Irr Diode reverse recovery energy Erec TEST CONDITIONS IF = 400 A IF = 400 A, VR = 300 V, dI/dt = -7000 A/μs, VGE = -15 V MIN. TYP. MAX. TJ = 25 °C - 1.38 1.80 TJ = 125 °C - 1.41 - TJ = 25 °C - 15.5 - TJ = 125 °C - 28.5 - TJ = 25 °C - 265 - TJ = 125 °C - 335 - TJ = 25 °C - 3.5 - TJ = 125 °C - 7.5 - V μC A mJ Revision: 12-Jun-15 Document Number: 93488 2 For technical questions within your region: [email protected], [email protected], [email protected] THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000 VS-GT400TH60N www.vishay.com Vishay Semiconductors THERMAL AND MECHANICAL SPECIFICATIONS PARAMETER SYMBOL MIN. TYP. MAX. TJ - - 175 TStg -40 - 125 - - 0.094 - - 0.158 - 0.035 - Operating junction temperature range Storage temperature range TEST CONDITIONS °C IGBT Junction to case per ½ module RthJC Diode Case to sink RthCS Conductive grease applied Power terminal screw: M6 2.5 to 5.0 Mounting screw: M6 3.0 to 5.0 Mounting torque K/W Nm Weight 300 800 70 700 60 600 g 50 Eon, Eoff (mJ) 25 °C 500 IC (A) UNITS 175 °C 400 300 40 Eon Eoff 30 20 200 10 100 0 0 0 0.5 1.0 1.5 2.0 2.5 3.0 3.5 4.0 VCE (V) 93488_01 0 200 400 600 800 IC (A) 93488_03 Fig. 3 - IGBT Switching Loss vs. Collector Current VCC = 600 V, Rg = 1.3 , VGE = ± 15 V, TJ = 175 °C Fig. 1 - IGBT Typical Output Characteristics VGE = 15 V 800 100 700 90 80 Eon, Eoff (mJ) 600 IC (A) 500 400 TJ = 175 °C 300 TJ = 25 °C 200 70 Eoff 60 50 Eon 40 30 20 100 10 0 0 3 93488_02 4 5 6 7 8 9 10 VGE (V) Fig. 2 - IGBT Typical Transfer Characteristics VCE = 20 V 0 93488_04 5 10 15 20 Rg (Ω) Fig. 4 - Switching Loss vs. Gate Resistor VCE = 600 V, IC = 400 A, VGE = ± 15 V, TJ = 175 °C Revision: 12-Jun-15 Document Number: 93488 3 For technical questions within your region: [email protected], [email protected], [email protected] THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000 VS-GT400TH60N www.vishay.com Vishay Semiconductors 900 800 IC, module 700 IC (A) 600 500 400 300 200 100 0 0 93488_05 100 200 300 400 500 600 700 VCE (V) Fig. 5 - RBSOA Rg = 1.3 , VGE = ± 15 V, TJ = 175 °C ZthJC (K/W) 1 0.1 IGBT 0.01 0.001 0.001 0.01 0.1 1 10 t (s) Fig. 6 - IGBT Transient Thermal Impedance 93488_06 12 800 700 10 600 8 E (mJ) IC (A) 500 400 300 4 200 150 °C 2 25 °C 100 0 0 0 93488_07 Erec 6 0.5 1.0 1.5 VF (V) Fig. 7 - Forward Characteristics of Diode 2.0 0 93488_08 200 400 600 800 IF (A) Fig. 8 - Diode Switching Loss vs. IF VCC = 600 V, Rg = 1.3 , VGE = - 15 V, TJ = 125 °C Revision: 12-Jun-15 Document Number: 93488 4 For technical questions within your region: [email protected], [email protected], [email protected] THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000 VS-GT400TH60N www.vishay.com Vishay Semiconductors 8 7 6 Erec E (mJ) 5 4 3 2 1 0 0 2 4 6 8 10 12 Rg (Ω) 93488_09 Fig. 9 - Diode Switching Loss vs. Gate Resistance VCC = 600 V, IC = 400 A, VGE = - 15 V, TJ = 125 °C ZthJC (K/W) 1 0.1 Diode 0.01 0.001 0.001 93488_10 0.01 0.1 1 10 t (s) Fig. 10 - Diode Transient Thermal Impedance CIRCUIT CONFIGURATION 6 7 1 2 3 5 4 LINKS TO RELATED DOCUMENTS Dimensions www.vishay.com/doc?95525 Revision: 12-Jun-15 Document Number: 93488 5 For technical questions within your region: [email protected], [email protected], [email protected] THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000 Outline Dimensions www.vishay.com Vishay Semiconductors Double INT-A-PAK DIMENSIONS in millimeters (inches) 26 23 ± 0.3 6 7.2 ± 0.6 31 ± 0.5 2.8 x 0.5 16 3-M6 30.5 ± 0.5 Mounting depth max. 11 Ø 6. 4 ± 28 ± 0.3 28 ± 0.3 20.1 0. 2 6 22 35.4 27 ± 0.4 3 15 ± 0.4 2 30 48 ± 0.4 61.4 1 6 93 ± 0.4 106.4 Revision: 27-May-13 Document Number: 95525 1 For technical questions within your region: [email protected], [email protected], [email protected] THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000 Legal Disclaimer Notice www.vishay.com Vishay Disclaimer ALL PRODUCT, PRODUCT SPECIFICATIONS AND DATA ARE SUBJECT TO CHANGE WITHOUT NOTICE TO IMPROVE RELIABILITY, FUNCTION OR DESIGN OR OTHERWISE. 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We confirm that all the products identified as being compliant to IEC 61249-2-21 conform to JEDEC JS709A standards. Revision: 02-Oct-12 1 Document Number: 91000