VS-GT100TP60N www.vishay.com Vishay Semiconductors Half Bridge IGBT Power Module, 600 V, 100 A FEATURES • Low VCE(on) trench IGBT technology • 5 μs short circuit capability • VCE(on) with positive temperature coefficient • Maximum junction temperature 175 °C • Low inductance case • Fast and soft reverse recovery antiparallel FWD • Isolated copper baseplate using DCB (Direct Copper Bonding) technology INT-A-PAK • Material categorization: for definitions of compliance please see www.vishay.com/doc?99912 PRODUCT SUMMARY VCES 600 V IC at TC = 80 °C 100 A TYPICAL APPLICATIONS VCE(on) (typical) at IC = 100 A, 25 °C 1.65 V • UPS (Uninterruptable Power Supply) Speed 8 kHz to 30 kHz Package INT-A-PAK Circuit Half bridge • Switching mode power supplies • Electronic welders DESCRIPTION Vishay’s IGBT power module provides ultra low conduction loss as well as short circuit ruggedness. It is designed for applications such as UPS and SMPS. ABSOLUTE MAXIMUM RATINGS (TC = 25 °C unless otherwise noted) PARAMETER SYMBOL TEST CONDITIONS MAX. Collector to emitter voltage VCES 600 Gate to emitter voltage VGES ± 20 Collector current Pulsed collector current TC = 25 °C IC ICM (1) Diode continuous forward current IF Diode maximum forward current IFM (1) UNITS V 160 TC = 80 °C 100 tp = 1 ms 200 TC = 80 °C 100 tp = 1 ms 200 A Maximum power dissipation PD TJ = 175 °C 417 W Short circuit withstand time tSC TC = 125 °C 5 μs 4000 V RMS isolation voltage VISOL f = 50 Hz, t = 1 min Note (1) Repetitive rating: pulse width limited by maximum junction temperature. IGBT ELECTRICAL SPECIFICATIONS (TC = 25 °C unless otherwise noted) PARAMETER Collector to emitter breakdown voltage SYMBOL V(BR)CES Collector to emitter voltage VCE(on) Gate to emitter threshold voltage TEST CONDITIONS TJ = 25 °C MIN. TYP. MAX. 600 - - VGE = 15 V, IC = 100 A, TJ = 25 °C - 1.65 2.10 VGE = 15 V, IC = 100 A, TJ = 175 °C - 2.00 - UNITS V VGE(th) VCE = VGE, IC = 1.0 mA, TJ = 25 °C 4.0 4.4 6.5 Collector cut-off current ICES VCE = VCES, VGE = 0 V, TJ = 25 °C - - 5.0 mA Gate to emitter leakage current IGES VGE = VGES, VCE = 0 V, TJ = 25 °C - - 400 nA Revision: 11-Jun-15 Document Number: 93799 1 For technical questions within your region: [email protected], [email protected], [email protected] THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000 VS-GT100TP60N www.vishay.com Vishay Semiconductors SWITCHING CHARACTERISTICS PARAMETER SYMBOL Turn-on delay time TEST CONDITIONS td(on) Rise time tr Turn-off delay time VCC = 300 V, IC = 100 A, Rg = 2.2 , VGE = ± 15 V, TJ = 25 °C td(off) Fall time tf MIN. TYP. MAX. - 106 - - 49 - - 102 - - 85 - Turn-on switching loss Eon - 0.46 - Turn-off switching loss Eoff - 0.95 - Turn-on delay time td(on) - 112 - tr - 62 - - 126 - Rise time Turn-off delay time VCC = 300 V, IC = 100 A, Rg = 2.2 , VGE = ± 15 V, TJ = 125 °C td(off) Fall time tf - 109 - Turn-on switching loss Eon - 0.78 - Turn-off switching loss Eoff - 1.73 - Input capacitance Cies Output capacitance Coes Reverse transfer capacitance Cres SC data ISC Stray inductance Module lead resistance, terminal to chip VGE = 0 V, VCE = 30 V, f = 1.0 MHz tp 5 μs, VGE = 15 V, TJ = 125 °C, VCC = 360 V, VCEM 1200 V - 7.71 - - 0.53 - - 0.23 - - 900 - UNITS ns mJ ns mJ nF A LCE - - 30 nH RCC’+EE’ - 0.75 - m UNITS DIODE ELECTRICAL SPECIFICATIONS (TC = 25 °C unless otherwise noted) PARAMETER SYMBOL Forward voltage VF Reverse recovery charge Qrr Peak reverse recovery current Irr Reverse recovery energy TEST CONDITIONS IF = 100 A IF = 100 A, VR = 600 V, RG = 5.6 VGE = -15 V Erec MIN. TYP. MAX. TJ = 25 °C - 1.40 1.80 TJ = 125 °C - 1.40 - TJ = 25 °C - 5.5 - TJ = 125 °C - 7.3 - TJ = 25 °C - 68 - TJ = 125 °C - 88 - TJ = 25 °C - 0.89 - TJ = 125 °C - 1.71 - V μC A mJ THERMAL AND MECHANICAL SPECIFICATIONS PARAMETER SYMBOL Maximum junction temperature Storage temperature range Junction to case IGBT Diode Case to sink (Conductive grease applied) Mounting torque Weight MIN. TYP. MAX. TJ TEST CONDITIONS - - 175 TStg -40 - 125 - - 0.36 - - 0.57 - 0.05 - RthJC RthCS Power terminal screw: M5 2.5 to 5.0 Mounting screw: M6 3.0 to 5.0 - 150 UNITS °C K/W Nm - g Revision: 11-Jun-15 Document Number: 93799 2 For technical questions within your region: [email protected], [email protected], [email protected] THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000 VS-GT100TP60N www.vishay.com Vishay Semiconductors 5 200 VCC = 300 V RG = 2.2 Ω VGE = ± 15 V TJ = 125 °C 4.5 VGE = 15 V 175 4 150 25 °C 3.5 100 E (mJ) IC (A) 125 175 °C 3 2.5 EON 2 75 1.5 50 1 25 EOFF 0.5 0 0 0 0.5 1 1.5 2 2.5 3 3.5 0 50 100 150 VCE (V) IC (A) Fig. 1 - IGBT Typical Output Characteristics Fig. 3 - IGBT Switching Loss vs. IC 200 7 200 VCE = 50 V 175 VCC = 300 V IC = 100 A VGE = ± 15 V TJ = 125 °C 6 150 5 175 °C E (mJ) IC (A) 125 100 4 Eon 3 75 Eoff 2 50 25 °C 1 25 0 0 4 5 6 7 8 9 0 10 10 20 30 40 50 Rg (Ω) VGE (V) Fig. 2 - IGBT Transfer Characteristics Fig. 4 - IGBT Switching Loss vs. RG 250 Module 200 IC (A) 150 100 RG = 2.2 Ω VGE = ± 15 V TJ = 125 °C 50 0 0 100 200 300 400 500 600 700 VCE (V) Fig. 5 - RBSOA Revision: 11-Jun-15 Document Number: 93799 3 For technical questions within your region: [email protected], [email protected], [email protected] THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000 VS-GT100TP60N www.vishay.com Vishay Semiconductors ZthJC (K/W) 1 IGBT 0.1 0.01 0.001 0.01 0.1 1 10 t (s) Fig. 6 - IGBT Transient Thermal Impedance 200 2.5 VCC = 300 V RG = 2.2 Ω VGE = - 15 V TJ = 125 °C 175 2 E (mJ) 150 IF (A) 125 100 1.5 EREC 1 75 125 °C 50 0.5 25 °C 25 0 0 0 0.5 1 1.5 0 2 50 100 150 VF (V) IF (A) Fig. 7 - Diode Forward Characteristics Fig. 8 - Diode Switching Loss vs. IF 200 2 1.8 1.6 E (mJ) 1.4 EREC 1.2 1 0.8 0.6 VCC = 300 V IF = 100 A VGE = - 15 V TJ = 125 °C 0.4 0.2 0 0 10 20 30 40 50 RG (Ω) Fig. 9 - Diode Switching Loss vs. RG Revision: 11-Jun-15 Document Number: 93799 4 For technical questions within your region: [email protected], [email protected], [email protected] THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000 VS-GT100TP60N www.vishay.com Vishay Semiconductors 1 ZthJC (K/W) Diode 0.1 0.01 0.001 0.01 0.1 1 10 t (s) Fig. 10 - Forward Characteristics of Diode CIRCUIT CONFIGURATION 6 7 1 2 3 5 4 LINKS TO RELATED DOCUMENTS Dimensions www.vishay.com/doc?95524 Revision: 11-Jun-15 Document Number: 93799 5 For technical questions within your region: [email protected], [email protected], [email protected] THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000 Outline Dimensions www.vishay.com Vishay Semiconductors INT-A-PAK DIMENSIONS in millimeters (inches) Revision: 06-Aug-12 Document Number: 95524 1 For technical questions within your region: [email protected], [email protected], [email protected] THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. 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