VS-GB600AH120N www.vishay.com Vishay Semiconductors Molding Type Module IGBT, 1-in-1 Package, 1200 V and 600 A FEATURES • High short circuit capability, self limiting to 6 x IC • 10 μs short circuit capability • VCE(on) with positive temperature coefficient • Low inductance case • Fast and soft reverse recovery antiparallel FWD • Isolated copper baseplate using DCB (Direct Copper Bonding) technology • Material categorization: for definitions of compliance please see www.vishay.com/doc?99912 Double INT-A-PAK TYPICAL APPLICATIONS • AC inverter drives PRODUCT SUMMARY VCES 1200 V • Switching mode power supplies IC at TC = 80 °C 600 A • Electronic welder at fsw up to 20 kHz VCE(on) (typical) at IC = 600 A, 25 °C 1.9 V DESCRIPTION Speed 8 kHz to 30 kHz Vishay’s IGBT power module provides ultralow conduction loss as well as short circuit ruggedness. It is designed for applications such as inverters and UPS. Package Double INT-A-PAK Circuit Single switch with AP diode ABSOLUTE MAXIMUM RATINGS (TC = 25 °C unless otherwise noted) PARAMETER SYMBOL TEST CONDITIONS MAX. Collector to emitter voltage VCES 1200 Gate to emitter voltage VGES ± 20 Collector current at TJ = 150 °C Pulsed collector current IC ICM (1) V TC = 25 °C 910 TC = 80 °C 600 TC = 80 °C 1200 Diode continuous forward current IF 600 Diode maximum forward current IFM 1200 Maximum power dissipation PD TJ = 150 °C tSC TJ = 125 °C Short circuit withstand time RMS isolation voltage I2t-value, diode VISOL I2t UNITS f = 50 Hz, t = 1 min VR = 0 V, t = 10 ms, TJ = 125 °C A 3125 W 10 μs 2500 V 74 000 A2s Note (1) Repetitive rating: pulse width limited by maximum junction temperature. Revision: 22-Oct-15 Document Number: 94791 1 For technical questions within your region: [email protected], [email protected], [email protected] THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000 VS-GB600AH120N www.vishay.com Vishay Semiconductors IGBT ELECTRICAL SPECIFICATIONS (TC = 25 °C unless otherwise noted) PARAMETER Collector to emitter breakdown voltage SYMBOL V(BR)CES TEST CONDITIONS TJ = 25 °C MIN. TYP. MAX. 1200 - - VGE = 15 V, IC = 600 A, TJ = 25 °C - 1.9 - VGE = 15 V, IC = 600 A, TJ = 125 °C - 2.1 - 5.0 6.2 7.0 UNITS Collector to emitter voltage VCE(on) V Gate to emitter threshold voltage VGE(th) VCE = VGE, IC = 24 mA, TJ = 25 °C Collector cut-off current ICES VCE = VCES, VGE = 0 V, TJ = 25 °C - - 5.0 mA Gate to emitter leakage current IGES VGE = VGES, VCE = 0 V, TJ = 25 °C - - 400 nA UNITS SWITCHING CHARACTERISTICS PARAMETER Turn-on delay time Rise time Turn-off delay time SYMBOL MIN. TYP. MAX. td(on) - 200 - tr - 62 - - 510 - td(off) TEST CONDITIONS VCC = 600 V, IC = 600 A, Rg = 3 , VGE = ± 15 V, TJ = 25 °C - 60 - Turn-on switching loss Eon - 39 - Turn-off switching loss Eoff - 48 - Turn-on delay time td(on) - 210 - tr - 65 - - 600 - Fall time Rise time Turn-off delay time Fall time tf td(off) tf VCC = 600 V, IC = 600 A, Rg = 3 , VGE = ± 15 V, TJ = 125 °C - 75 - Turn-on switching loss Eon - 45 - Turn-off switching loss Eoff - 60 - Input capacitance Cies Output capacitance Coes Reverse transfer capacitance Cres SC data ISC Stray inductance LCE Module lead resistance, terminal to chip RCC’+EE’ VGE = 0 V, VCE = 25 V, f = 1.0 MHz tSC 10 μs, VGE = 15 V, TJ = 25 °C, VCC = 900 V, VCEM 1200 V TC = 25 °C ns mJ ns mJ - 41.0 - - 3.1 - - 2.0 - - 2600 - A - - 20 nH - 0.18 - m MIN. TYP. MAX. UNITS nF DIODE ELECTRICAL SPECIFICATIONS (TC = 25 °C unless otherwise noted) PARAMETER SYMBOL Diode forward voltage VF Diode reverse recovery charge Qrr Diode peak reverse recovery current Irr Diode reverse recovery energy Erec TEST CONDITIONS IF = 600 A IF = 600 A, VR = 600 V, dIF/dt = -6000 A/μs, VGE = -15 V TJ = 25 °C - 1.8 2.4 TJ = 125 °C - 1.9 - TJ = 25 °C - 65 - TJ = 125 °C - 100 - TJ = 25 °C - 450 - TJ = 125 °C - 510 - TJ = 25 °C - 35 - TJ = 125 °C - 42 - V μC A mJ Revision: 22-Oct-15 Document Number: 94791 2 For technical questions within your region: [email protected], [email protected], [email protected] THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000 VS-GB600AH120N www.vishay.com Vishay Semiconductors THERMAL AND MECHANICAL SPECIFICATIONS PARAMETER SYMBOL MIN. TYP. MAX. UNITS TJ -40 - 150 °C TStg -40 - 125 °C - - 0.04 - - 0.09 - 0.035 - Operating temperature range Storage temperature range TEST CONDITIONS IGBT Junction to case per module RthJC Diode Case to sink RthCS Conductive grease applied Power terminal screw: M6 2.5 to 5.0 Mounting screw: M6 3.0 to 6.0 Mounting torque Nm Weight 310 1200 g 160 VCC = 600 V Rg = 3 Ω VGE = ± 15 V TJ = 125 °C 140 900 25 °C 120 Eon, Eoff (mJ) IC (A) K/W 125 °C 600 300 Eoff 100 Eon 80 60 40 20 VGE = 15 V 0 0 0 1 2 3 4 0 200 400 VCE (V) 600 800 1000 1200 IC (A) Fig. 1 - Typical Output Characteristics Fig. 3 - Switching Loss vs. Collector Current 1200 160 VCE = 20 V Eon 140 1000 IC (A) 600 125 °C 400 Eon, Eoff (mJ) 120 25 °C 800 100 Eoff 80 60 40 200 VCC = 600 V IC = 600 A VGE = ± 15 V TJ = 125 °C 20 0 0 0 1 2 3 4 5 6 7 8 9 10 11 12 13 VGE (V) Fig. 2 - Typical Transfer Characteristics 0 5 10 15 20 25 Rg (Ω) Fig. 4 - Switching Loss vs. Gate Resistor Revision: 22-Oct-15 Document Number: 94791 3 For technical questions within your region: [email protected], [email protected], [email protected] THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000 VS-GB600AH120N www.vishay.com Vishay Semiconductors 20 103 VCC = 600 V td(off) td(on) t (ns) VGE (V) 10 102 tr tf 0 IC = 600 A TJ = 25 °C 101 - 10 0 1 2 3 4 5 VCC = 600 V Rg = 3 Ω VGE = ± 15 V TJ = 125 °C 6 0 200 400 600 Qg (μC) 800 1000 1200 IC (A) Fig. 5 - Gate Charge Characteristics Fig. 7 - Typical Switching Times 102 104 VCC = 600 V IC = 600 A VGE = ± 15 V TJ = 125 °C Cies 101 td(off) td(on) 103 t (ns) C (nF) Coes Cres tr 100 102 10-1 tf 101 0 5 10 15 20 25 30 35 0 5 10 15 20 25 Rg (Ω) VCE (V) Fig. 8 - Typical Switching Times vs. Gate Resistance Rg Fig. 6 - Typical Capacitance vs. Collector-Emitter Voltage 1200 1000 25 °C 800 125 °C IF (A) 600 400 200 0 0 1 2 3 VF (V) Fig. 9 - Typical forward Characteristics (Diode) Revision: 22-Oct-15 Document Number: 94791 4 For technical questions within your region: [email protected], [email protected], [email protected] THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000 VS-GB600AH120N www.vishay.com Vishay Semiconductors 100 Diode ZthJC - (K/W) 10-1 IGBT 10-2 10-3 10-4 10-5 10-4 10-3 10-2 10-1 100 tp (s) Fig. 10 - Transient Thermal Impedance CIRCUIT CONFIGURATION 1 3 5 2 LINKS TO RELATED DOCUMENTS Dimensions www.vishay.com/doc?95526 Revision: 22-Oct-15 Document Number: 94791 5 For technical questions within your region: [email protected], [email protected], [email protected] THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000 Legal Disclaimer Notice www.vishay.com Vishay Disclaimer ALL PRODUCT, PRODUCT SPECIFICATIONS AND DATA ARE SUBJECT TO CHANGE WITHOUT NOTICE TO IMPROVE RELIABILITY, FUNCTION OR DESIGN OR OTHERWISE. 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We confirm that all the products identified as being compliant to IEC 61249-2-21 conform to JEDEC JS709A standards. Revision: 02-Oct-12 1 Document Number: 91000