VS-GB400AH120N Datasheet

VS-GB400AH120N
www.vishay.com
Vishay Semiconductors
Molding Type Module IGBT,
1-in-1 Package, 1200 V and 400 A
FEATURES
• High short circuit capability, self limiting to 6 x IC
• 10 μs short circuit capability
• VCE(on) with positive temperature coefficient
• Low inductance case
• Fast and soft reverse recovery antiparallel FWD
• Isolated copper baseplate using DCB (Direct Copper
Bonding) technology
• Material categorization: for definitions of compliance
please see www.vishay.com/doc?99912
Double INT-A-PAK
TYPICAL APPLICATIONS
PRODUCT SUMMARY
• Switching mode power supplies
VCES
1200 V
IC at TC = 80 °C
400 A
VCE(on) (typical)
at IC = 400 A, 25 °C
1.90 V
Speed
8 kHz to 30 kHz
Package
Double INT-A-PAK
Circuit
Single switch with AP diode
• AC inverter drives
• Electronic welders at fsw up to 20 kHz
DESCRIPTION
Vishay’s IGBT power module provides ultralow conduction
loss as well as short circuit ruggedness. It is designed for
applications such as inverters and UPS.
ABSOLUTE MAXIMUM RATINGS (TC = 25 °C unless otherwise noted)
PARAMETER
SYMBOL
TEST CONDITIONS
MAX.
Collector to emitter voltage
VCES
1200
Gate to emitter voltage
VGES
± 20
Collector current at TJ = 150 °C
Pulsed collector current
IC
ICM
(1)
UNITS
V
TC = 25 °C
650
TC = 80 °C
400
TC = 80 °C
800
A
400
Diode continuous forward current
IF
Diode maximum forward current
IFM
Maximum power dissipation
PD
TJ = 150 °C
2500
W
Short circuit withstand time
tSC
TJ = 125 °C
10
μs
I2t-value, diode
I2t
VR = 0 V, t = 10 ms, TJ = 125 °C
27 500
A2s
2500
V
RMS isolation voltage
VISOL
800
f = 50 Hz, t = 1 min
Note
(1) Repetitive rating: pulse width limited by maximum junction temperature.
Revision: 22-Oct-15
Document Number: 93483
1
For technical questions within your region: [email protected], [email protected], [email protected]
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
VS-GB400AH120N
www.vishay.com
Vishay Semiconductors
IGBT ELECTRICAL SPECIFICATIONS (TC = 25 °C unless otherwise noted)
PARAMETER
Collector to emitter breakdown voltage
SYMBOL
V(BR)CES
TEST CONDITIONS
TJ = 25 °C
MIN.
TYP.
MAX.
1200
-
-
VGE = 15 V, IC = 400 A, TJ = 25 °C
-
1.9
-
VGE = 15 V, IC = 400 A, TJ = 125 °C
-
2.1
-
5.0
6.2
7.0
UNITS
Collector to emitter saturation voltage
VCE(on)
V
Gate to emitter threshold voltage
VGE(th)
VCE = VGE, IC = 8 mA, TJ = 25 °C
Zero gate voltage collector current
ICES
VCE = VCES, VGE = 0 V, TJ = 25 °C
-
-
5.0
mA
Gate to emitter leakage current
IGES
VGE = VGES, VCE = 0 V, TJ = 25 °C
-
-
400
nA
UNITS
SWITCHING CHARACTERISTICS
PARAMETER
Turn-on delay time
Rise time
Turn-off delay time
SYMBOL
MIN.
TYP.
MAX.
td(on)
-
100
-
tr
-
60
-
-
420
-
td(off)
TEST CONDITIONS
VCC = 600 V, IC = 400 A, Rg = 4 ,
VGE = ± 15 V, TJ = 25 °C
-
60
-
Turn-on switching loss
Eon
-
33
-
Turn-off switching loss
Eoff
-
42
-
Turn-on delay time
td(on)
-
120
-
tr
-
60
-
-
490
-
Fall time
Rise time
Turn-off delay time
Fall time
tf
td(off)
tf
VCC = 600 V, IC = 400 A, Rg = 4 ,
VGE = ± 15 V, TJ = 125 °C
-
75
-
Turn-on switching loss
Eon
-
35
-
Turn-off switching loss
Eoff
-
46
-
Input capacitance
Cies
Output capacitance
Coes
Reverse transfer capacitance
Cres
SC data
ISC
Stray inductance
LCE
Module lead resistance, terminal to chip
RCC’+EE’
VGE = 0 V, VCE = 25 V, f = 1.0 MHz
tsc  10 μs, VGE = 15 V, TJ = 125 °C,
VCC = 900 V, VCEM  1200 V
TC = 25 °C
ns
mJ
ns
mJ
-
30
-
-
4
-
-
3
-
-
1900
-
A
-
-
20
nH
-
0.18
-
m
MIN.
TYP.
MAX.
UNITS
nF
DIODE ELECTRICAL SPECIFICATIONS (TC = 25 °C unless otherwise noted)
PARAMETER
SYMBOL
Diode forward voltage
VF
Diode reverse recovery charge
Qrr
Diode peak reverse recovery current
Irr
Diode reverse recovery energy
Erec
TEST CONDITIONS
IF = 400 A
IF = 400 A, VR = 600 V,
dI/dt = -4000 A/μs,
VGE = -15 V
TJ = 25 °C
-
2.1
2.2
TJ = 125 °C
-
2.2
2.3
TJ = 25 °C
-
40
-
TJ = 125 °C
-
48
-
TJ = 25 °C
-
320
-
TJ = 125 °C
-
400
-
TJ = 25 °C
-
12
-
TJ = 125 °C
-
20
-
V
μC
A
mJ
Revision: 22-Oct-15
Document Number: 93483
2
For technical questions within your region: [email protected], [email protected], [email protected]
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
VS-GB400AH120N
www.vishay.com
Vishay Semiconductors
THERMAL AND MECHANICAL SPECIFICATIONS
PARAMETER
SYMBOL
Operating junction temperature range
Storage temperature range
TEST CONDITIONS
MIN.
TYP.
MAX.
TJ
-40
-
150
TStg
-40
-
125
-
-
0.05
-
-
0.09
-
0.035
-
°C
IGBT
Junction to case
per module
Diode
Case to sink
RthJC
RthCS
UNITS
Conductive grease applied
Power terminal screw: M6
2.5 to 5.0
Mounting screw: M6
3.0 to 6.0
Mounting torque
K/W
Nm
Weight
310
800
g
80
70
Eoff
60
Eon, Eoff (mJ)
IC (A)
600
TJ = 25 °C
400
TJ = 125 °C
50
40
Eon
30
200
20
10
0
0
0
1
2
3
4
VCE (V)
93483_01
0
200
400
800
IC (A)
93483_03
Fig. 1 - Typical Output Characteristics
VGE = 15 V
600
Fig. 3 - Switching Loss vs. Collector Current
VCC = 600 V, Rg = 4 , VGE = ± 15 V, TJ = 125 °C
1000
160
140
800
Eon, Eoff (mJ)
IC (A)
120
600
400
100
80
Eoff
60
40
TJ = 125 °C
200
Eon
TJ = 25 °C
20
0
0
0
93483_02
1
2
3
4
5
6
7
8
9 10 11 12 13
VGE (V)
Fig. 2 - Typical Transfer Characteristics
VCE = 20 V
0
93483_04
5
10
15
20
25
Rg (Ω)
Fig. 4 - Switching Loss vs. Gate Resistor
VCC = 600 V, IC = 400 A, VGE = ± 15 V, TJ = 125 °C
Revision: 22-Oct-15
Document Number: 93483
3
For technical questions within your region: [email protected], [email protected], [email protected]
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
VS-GB400AH120N
www.vishay.com
Vishay Semiconductors
20
1000
td(off)
td(on)
t (ns)
VGE (V)
10
100
tr
0
tf
- 10
10
0
1
2
3
4
5
0
Qg (μC)
93483_05
200
400
600
Fig. 7 - Typical Switching Times vs. IC
VCC = 600 V, Rg = 4 , VGE = ± 15 V, TJ = 125 °C
Fig. 5 - Gate Charge Characteristics
VCC = 600 V, IC = 400 A, TJ = 25 °C
100
10 000
Cies
td(off)
10
1000
td(on)
t (ns)
C (nF)
Coes
tr
Cres
1
100
tf
10
0.1
0
93483_06
800
IC (A)
93483_07
5
10
15
20
25
30
0
35
VCE (V)
5
15
20
25
Rg (Ω)
93483_08
Fig. 6 - Typical Capacitance vs. Collector to Emitter Voltage
10
Fig. 8 - Typical Switching Times vs. Gate Resistance
VCC = 600 V, IC = 400 A, VGE = ± 15 V, TJ = 125 °C
800
600
IF (A)
25 °C
400
125 °C
200
0
0
93483_09
1
2
3
VF (V)
Fig. 9 - Typical Forward Characteristics (Diode)
Revision: 22-Oct-15
Document Number: 93483
4
For technical questions within your region: [email protected], [email protected], [email protected]
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
VS-GB400AH120N
www.vishay.com
Vishay Semiconductors
1
Diode
ZthJC (K/W)
0.1
IGBT
0.01
0.001
0.0001
0.00001
0.0001
0.001
0.01
0.1
1
tp (s)
93483_10
Fig. 10 - Transient Thermal Impedance
CIRCUIT CONFIGURATION
1
3
5
2
LINKS TO RELATED DOCUMENTS
Dimensions
www.vishay.com/doc?95526
Revision: 22-Oct-15
Document Number: 93483
5
For technical questions within your region: [email protected], [email protected], [email protected]
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
Outline Dimensions
www.vishay.com
Vishay Semiconductors
Double INT-A-PAK
DIMENSIONS in millimeters (inches)
26
23 ± 0.3
6
7.2 ± 0.6
31 ± 0.5
2.8 x 0.5
16
3-M6
30.5 ± 0.5
Mounting depth max. 11
Ø
6.
4
±
28 ± 0.3
28 ± 0.3
20.1
0.
2
6
22
35.4
27 ± 0.4
3
15 ± 0.4
2
30
48 ± 0.4
61.4
1
6
93 ± 0.4
106.4
Revision: 27-May-13
Document Number: 95525
1
For technical questions within your region: [email protected], [email protected], [email protected]
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
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Revision: 02-Oct-12
1
Document Number: 91000