VS-GB400AH120N www.vishay.com Vishay Semiconductors Molding Type Module IGBT, 1-in-1 Package, 1200 V and 400 A FEATURES • High short circuit capability, self limiting to 6 x IC • 10 μs short circuit capability • VCE(on) with positive temperature coefficient • Low inductance case • Fast and soft reverse recovery antiparallel FWD • Isolated copper baseplate using DCB (Direct Copper Bonding) technology • Material categorization: for definitions of compliance please see www.vishay.com/doc?99912 Double INT-A-PAK TYPICAL APPLICATIONS PRODUCT SUMMARY • Switching mode power supplies VCES 1200 V IC at TC = 80 °C 400 A VCE(on) (typical) at IC = 400 A, 25 °C 1.90 V Speed 8 kHz to 30 kHz Package Double INT-A-PAK Circuit Single switch with AP diode • AC inverter drives • Electronic welders at fsw up to 20 kHz DESCRIPTION Vishay’s IGBT power module provides ultralow conduction loss as well as short circuit ruggedness. It is designed for applications such as inverters and UPS. ABSOLUTE MAXIMUM RATINGS (TC = 25 °C unless otherwise noted) PARAMETER SYMBOL TEST CONDITIONS MAX. Collector to emitter voltage VCES 1200 Gate to emitter voltage VGES ± 20 Collector current at TJ = 150 °C Pulsed collector current IC ICM (1) UNITS V TC = 25 °C 650 TC = 80 °C 400 TC = 80 °C 800 A 400 Diode continuous forward current IF Diode maximum forward current IFM Maximum power dissipation PD TJ = 150 °C 2500 W Short circuit withstand time tSC TJ = 125 °C 10 μs I2t-value, diode I2t VR = 0 V, t = 10 ms, TJ = 125 °C 27 500 A2s 2500 V RMS isolation voltage VISOL 800 f = 50 Hz, t = 1 min Note (1) Repetitive rating: pulse width limited by maximum junction temperature. Revision: 22-Oct-15 Document Number: 93483 1 For technical questions within your region: [email protected], [email protected], [email protected] THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000 VS-GB400AH120N www.vishay.com Vishay Semiconductors IGBT ELECTRICAL SPECIFICATIONS (TC = 25 °C unless otherwise noted) PARAMETER Collector to emitter breakdown voltage SYMBOL V(BR)CES TEST CONDITIONS TJ = 25 °C MIN. TYP. MAX. 1200 - - VGE = 15 V, IC = 400 A, TJ = 25 °C - 1.9 - VGE = 15 V, IC = 400 A, TJ = 125 °C - 2.1 - 5.0 6.2 7.0 UNITS Collector to emitter saturation voltage VCE(on) V Gate to emitter threshold voltage VGE(th) VCE = VGE, IC = 8 mA, TJ = 25 °C Zero gate voltage collector current ICES VCE = VCES, VGE = 0 V, TJ = 25 °C - - 5.0 mA Gate to emitter leakage current IGES VGE = VGES, VCE = 0 V, TJ = 25 °C - - 400 nA UNITS SWITCHING CHARACTERISTICS PARAMETER Turn-on delay time Rise time Turn-off delay time SYMBOL MIN. TYP. MAX. td(on) - 100 - tr - 60 - - 420 - td(off) TEST CONDITIONS VCC = 600 V, IC = 400 A, Rg = 4 , VGE = ± 15 V, TJ = 25 °C - 60 - Turn-on switching loss Eon - 33 - Turn-off switching loss Eoff - 42 - Turn-on delay time td(on) - 120 - tr - 60 - - 490 - Fall time Rise time Turn-off delay time Fall time tf td(off) tf VCC = 600 V, IC = 400 A, Rg = 4 , VGE = ± 15 V, TJ = 125 °C - 75 - Turn-on switching loss Eon - 35 - Turn-off switching loss Eoff - 46 - Input capacitance Cies Output capacitance Coes Reverse transfer capacitance Cres SC data ISC Stray inductance LCE Module lead resistance, terminal to chip RCC’+EE’ VGE = 0 V, VCE = 25 V, f = 1.0 MHz tsc 10 μs, VGE = 15 V, TJ = 125 °C, VCC = 900 V, VCEM 1200 V TC = 25 °C ns mJ ns mJ - 30 - - 4 - - 3 - - 1900 - A - - 20 nH - 0.18 - m MIN. TYP. MAX. UNITS nF DIODE ELECTRICAL SPECIFICATIONS (TC = 25 °C unless otherwise noted) PARAMETER SYMBOL Diode forward voltage VF Diode reverse recovery charge Qrr Diode peak reverse recovery current Irr Diode reverse recovery energy Erec TEST CONDITIONS IF = 400 A IF = 400 A, VR = 600 V, dI/dt = -4000 A/μs, VGE = -15 V TJ = 25 °C - 2.1 2.2 TJ = 125 °C - 2.2 2.3 TJ = 25 °C - 40 - TJ = 125 °C - 48 - TJ = 25 °C - 320 - TJ = 125 °C - 400 - TJ = 25 °C - 12 - TJ = 125 °C - 20 - V μC A mJ Revision: 22-Oct-15 Document Number: 93483 2 For technical questions within your region: [email protected], [email protected], [email protected] THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000 VS-GB400AH120N www.vishay.com Vishay Semiconductors THERMAL AND MECHANICAL SPECIFICATIONS PARAMETER SYMBOL Operating junction temperature range Storage temperature range TEST CONDITIONS MIN. TYP. MAX. TJ -40 - 150 TStg -40 - 125 - - 0.05 - - 0.09 - 0.035 - °C IGBT Junction to case per module Diode Case to sink RthJC RthCS UNITS Conductive grease applied Power terminal screw: M6 2.5 to 5.0 Mounting screw: M6 3.0 to 6.0 Mounting torque K/W Nm Weight 310 800 g 80 70 Eoff 60 Eon, Eoff (mJ) IC (A) 600 TJ = 25 °C 400 TJ = 125 °C 50 40 Eon 30 200 20 10 0 0 0 1 2 3 4 VCE (V) 93483_01 0 200 400 800 IC (A) 93483_03 Fig. 1 - Typical Output Characteristics VGE = 15 V 600 Fig. 3 - Switching Loss vs. Collector Current VCC = 600 V, Rg = 4 , VGE = ± 15 V, TJ = 125 °C 1000 160 140 800 Eon, Eoff (mJ) IC (A) 120 600 400 100 80 Eoff 60 40 TJ = 125 °C 200 Eon TJ = 25 °C 20 0 0 0 93483_02 1 2 3 4 5 6 7 8 9 10 11 12 13 VGE (V) Fig. 2 - Typical Transfer Characteristics VCE = 20 V 0 93483_04 5 10 15 20 25 Rg (Ω) Fig. 4 - Switching Loss vs. Gate Resistor VCC = 600 V, IC = 400 A, VGE = ± 15 V, TJ = 125 °C Revision: 22-Oct-15 Document Number: 93483 3 For technical questions within your region: [email protected], [email protected], [email protected] THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000 VS-GB400AH120N www.vishay.com Vishay Semiconductors 20 1000 td(off) td(on) t (ns) VGE (V) 10 100 tr 0 tf - 10 10 0 1 2 3 4 5 0 Qg (μC) 93483_05 200 400 600 Fig. 7 - Typical Switching Times vs. IC VCC = 600 V, Rg = 4 , VGE = ± 15 V, TJ = 125 °C Fig. 5 - Gate Charge Characteristics VCC = 600 V, IC = 400 A, TJ = 25 °C 100 10 000 Cies td(off) 10 1000 td(on) t (ns) C (nF) Coes tr Cres 1 100 tf 10 0.1 0 93483_06 800 IC (A) 93483_07 5 10 15 20 25 30 0 35 VCE (V) 5 15 20 25 Rg (Ω) 93483_08 Fig. 6 - Typical Capacitance vs. Collector to Emitter Voltage 10 Fig. 8 - Typical Switching Times vs. Gate Resistance VCC = 600 V, IC = 400 A, VGE = ± 15 V, TJ = 125 °C 800 600 IF (A) 25 °C 400 125 °C 200 0 0 93483_09 1 2 3 VF (V) Fig. 9 - Typical Forward Characteristics (Diode) Revision: 22-Oct-15 Document Number: 93483 4 For technical questions within your region: [email protected], [email protected], [email protected] THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000 VS-GB400AH120N www.vishay.com Vishay Semiconductors 1 Diode ZthJC (K/W) 0.1 IGBT 0.01 0.001 0.0001 0.00001 0.0001 0.001 0.01 0.1 1 tp (s) 93483_10 Fig. 10 - Transient Thermal Impedance CIRCUIT CONFIGURATION 1 3 5 2 LINKS TO RELATED DOCUMENTS Dimensions www.vishay.com/doc?95526 Revision: 22-Oct-15 Document Number: 93483 5 For technical questions within your region: [email protected], [email protected], [email protected] THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000 Outline Dimensions www.vishay.com Vishay Semiconductors Double INT-A-PAK DIMENSIONS in millimeters (inches) 26 23 ± 0.3 6 7.2 ± 0.6 31 ± 0.5 2.8 x 0.5 16 3-M6 30.5 ± 0.5 Mounting depth max. 11 Ø 6. 4 ± 28 ± 0.3 28 ± 0.3 20.1 0. 2 6 22 35.4 27 ± 0.4 3 15 ± 0.4 2 30 48 ± 0.4 61.4 1 6 93 ± 0.4 106.4 Revision: 27-May-13 Document Number: 95525 1 For technical questions within your region: [email protected], [email protected], [email protected] THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000 Legal Disclaimer Notice www.vishay.com Vishay Disclaimer ALL PRODUCT, PRODUCT SPECIFICATIONS AND DATA ARE SUBJECT TO CHANGE WITHOUT NOTICE TO IMPROVE RELIABILITY, FUNCTION OR DESIGN OR OTHERWISE. Vishay Intertechnology, Inc., its affiliates, agents, and employees, and all persons acting on its or their behalf (collectively, “Vishay”), disclaim any and all liability for any errors, inaccuracies or incompleteness contained in any datasheet or in any other disclosure relating to any product. Vishay makes no warranty, representation or guarantee regarding the suitability of the products for any particular purpose or the continuing production of any product. To the maximum extent permitted by applicable law, Vishay disclaims (i) any and all liability arising out of the application or use of any product, (ii) any and all liability, including without limitation special, consequential or incidental damages, and (iii) any and all implied warranties, including warranties of fitness for particular purpose, non-infringement and merchantability. Statements regarding the suitability of products for certain types of applications are based on Vishay’s knowledge of typical requirements that are often placed on Vishay products in generic applications. Such statements are not binding statements about the suitability of products for a particular application. It is the customer’s responsibility to validate that a particular product with the properties described in the product specification is suitable for use in a particular application. Parameters provided in datasheets and/or specifications may vary in different applications and performance may vary over time. All operating parameters, including typical parameters, must be validated for each customer application by the customer’s technical experts. Product specifications do not expand or otherwise modify Vishay’s terms and conditions of purchase, including but not limited to the warranty expressed therein. Except as expressly indicated in writing, Vishay products are not designed for use in medical, life-saving, or life-sustaining applications or for any other application in which the failure of the Vishay product could result in personal injury or death. Customers using or selling Vishay products not expressly indicated for use in such applications do so at their own risk. Please contact authorized Vishay personnel to obtain written terms and conditions regarding products designed for such applications. No license, express or implied, by estoppel or otherwise, to any intellectual property rights is granted by this document or by any conduct of Vishay. Product names and markings noted herein may be trademarks of their respective owners. Material Category Policy Vishay Intertechnology, Inc. hereby certifies that all its products that are identified as RoHS-Compliant fulfill the definitions and restrictions defined under Directive 2011/65/EU of The European Parliament and of the Council of June 8, 2011 on the restriction of the use of certain hazardous substances in electrical and electronic equipment (EEE) - recast, unless otherwise specified as non-compliant. Please note that some Vishay documentation may still make reference to RoHS Directive 2002/95/EC. We confirm that all the products identified as being compliant to Directive 2002/95/EC conform to Directive 2011/65/EU. Vishay Intertechnology, Inc. hereby certifies that all its products that are identified as Halogen-Free follow Halogen-Free requirements as per JEDEC JS709A standards. Please note that some Vishay documentation may still make reference to the IEC 61249-2-21 definition. We confirm that all the products identified as being compliant to IEC 61249-2-21 conform to JEDEC JS709A standards. Revision: 02-Oct-12 1 Document Number: 91000