VS-GA200TH60S www.vishay.com Vishay Semiconductors Molding Type Module IGBT, 2-in-1 Package, 600 V and 200 A FEATURES • High short circuit capability • 10 μs short circuit capability • VCE(on) with positive temperature coefficient • Maximum junction temperature 150 °C • Latch-up free • Low inductance case Double INT-A-PAK • Fast and soft reverse recovery antiparallel FWD • Isolated copper baseplate using DCB (Direct Copper Bonding) technology • Material categorization: for definitions of compliance please see www.vishay.com/doc?99912 PRODUCT SUMMARY TYPICAL APPLICATIONS VCES 600 V • UPS IC at TC = 80 °C 200 A • Switching mode power supplies VCE(on) (typical) at IC = 200 A, 25 °C 1.9 V • Electronic welders Speed DC to 1 kHz Package Double INT-A-PAK Circuit Half bridge DESCRIPTION Vishay’s IGBT power module provides ultra low conduction loss as well as short circuit ruggedness. It is designed for applications such as general UPS and SMPS. ABSOLUTE MAXIMUM RATINGS (TC = 25 °C unless otherwise noted) PARAMETER SYMBOL TEST CONDITIONS MAX. Collector to emitter voltage VCES 600 Gate to emitter voltage VGES ± 20 Collector current Pulsed collector current IC ICM (1) UNITS V TC = 25 °C 260 TC = 80 °C 200 tp = 1 ms 400 TC = 80 °C 200 A Diode continuous forward current IF Diode maximum forward current IFM tp = 1 ms 400 Maximum power dissipation PD TJ = 150 °C 1042 W Short circuit withstand time tSC TC = 125 °C 10 μs f = 50 Hz, t = 1 min 2500 V VR= 0 V, t = 10 ms, TJ = 125 °C 4900 A2s RMS isolation voltage I2t-value, diode VISOL I2t Note (1) Repetitive rating: pulse width limited by maximum junction temperature. Revision: 10-Jun-15 Document Number: 94762 1 For technical questions within your region: [email protected], [email protected], [email protected] THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000 VS-GA200TH60S www.vishay.com Vishay Semiconductors IGBT ELECTRICAL SPECIFICATIONS (TC = 25 °C unless otherwise noted) PARAMETER Collector to emitter breakdown voltage SYMBOL V(BR)CES Collector to emitter voltage VCE(on) Gate to emitter threshold voltage VGE(th) TEST CONDITIONS TJ = 25 °C MIN. TYP. MAX. 600 - - VGE = 15 V, IC = 200 A, TJ = 25 °C - 1.9 - VGE = 15 V, IC = 200 A, TJ = 125 °C - 2.3 - VCE = VGE, IC = 0.25 mA, TJ = 25 °C 3.5 4.5 5.5 UNITS V Collector cut-off current ICES VCE = VCES, VGE = 0 V, TJ = 25 °C - - 5.0 μA Gate to emitter leakage current IGES VGE = VGES, VCE = 0 V, TJ = 25 °C - - 400 nA UNITS SWITCHING CHARACTERISTICS PARAMETER Turn-on delay time Rise time Turn-off delay time SYMBOL MIN. TYP. MAX. td(on) - 106 - tr - 45 - - 460 - td(off) TEST CONDITIONS VCC = 300 V, IC = 200 A, Rg = 4.7 , VGE = ± 15 V, TJ = 25 °C - 51 - Turn-on switching loss Eon - 4.2 - Turn-off switching loss Eoff - 9.0 - Turn-on delay time td(on) - 120 - tr - 68 - - 510 - - 70 - Fall time Rise time Turn-off delay time Fall time tf td(off) tf VCC = 300 V, IC = 200 A, Rg = 4.7 , VGE = ± 15 V, TJ = 125 °C Turn-on switching loss Eon - 5.1 - Turn-off switching loss Eoff - 11.3 - Input capacitance Cies Output capacitance Coes Reverse transfer capacitance Cres SC data ISC Stray inductance LCE Module lead resistance, terminal to chip RCC’+EE’ VGE = 0 V, VCE = 25 V, f = 1.0 MHz tsc 10 μs, VGE = 15 V, TJ = 125 °C, VCC = 300 V, VCEM 600 V TC = 25 °C ns mJ ns mJ - 13.1 - - 0.71 - - 0.38 - - 650 - A - - 20 nH - 0.35 - m MIN. TYP. MAX. UNITS nF DIODE ELECTRICAL SPECIFICATIONS (TC = 25 °C unless otherwise noted) PARAMETER SYMBOL Diode forward voltage VF Diode reverse recovery charge Qrr Diode peak reverse recovery current Irr Diode reverse recovery energy Erec TEST CONDITIONS IF = 200 A IF = 200 A, VR = 300 V, dI/dt = -6000 A/μs, VGE = -15 V TJ = 25 °C - 1.4 1.6 TJ = 125 °C - 1.6 1.8 TJ = 25 °C - 9 - TJ = 125 °C - 16 - TJ = 25 °C - 140 - TJ = 125 °C - 165 - TJ = 25 °C - 2.4 - TJ = 125 °C - 4.2 - V μC A mJ Revision: 10-Jun-15 Document Number: 94762 2 For technical questions within your region: [email protected], [email protected], [email protected] THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000 VS-GA200TH60S www.vishay.com Vishay Semiconductors THERMAL AND MECHANICAL SPECIFICATIONS PARAMETER SYMBOL Operating junction temperature range Storage temperature range TEST CONDITIONS MIN. TYP. MAX. TJ -40 - 150 TSTG -40 - 125 - - 0.12 - - 0.27 - 0.03 - °C IGBT Junction to case RthJC Diode Case to sink Conductive grease applied RthCS Power terminal screw: M6 2.5 to 5.0 Mounting screw: M6 3.0 to 6.0 Mounting torque K/W Nm Weight 325 20 400 VGE = 15 V VCC = 300 V Rg = 4.7 Ω VGE = ± 15 V TJ = 125 °C 18 350 16 300 Eon, Eoff (mJ) 25 °C 250 IC (A) UNITS 125 °C 200 150 14 g Eoff 12 Eon 10 8 6 100 4 50 2 0 0 0 1 2 3 0 4 200 300 400 VCE (V) IC (A) Fig. 1 - Typical Output Characteristics Fig. 3 - Switching Loss vs. Collector Current 30 400 VCC = 300 V IC = 200 A VGE = ± 15 V TJ = 125 °C VCE = 20 V 350 25 Eon, Eoff (mJ) 25 °C 300 125 °C 250 IC (A) 100 200 150 Eon 20 Eoff 15 10 100 5 50 0 0 4 8 6 10 0 5 10 15 20 25 VGE (V) Rg (Ω) Fig. 2 - Typical Transfer Characteristics Fig. 4 - Switching Loss vs. Gate Resistor 30 Revision: 10-Jun-15 Document Number: 94762 3 For technical questions within your region: [email protected], [email protected], [email protected] THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000 VS-GA200TH60S www.vishay.com Vishay Semiconductors 20 103 VCC = 300 V 18 td(off) 16 12 t (ns) VGE (V) 14 10 8 td(on) tr 102 tf 6 VCC = 300 V Rg = 4.7 Ω VGE = ± 15 V TJ = 125 °C 4 IC = 100 A 2 TJ = 25 °C 0 0 100 200 300 400 500 600 101 700 0 200 100 Qg (nC) 300 400 IC (A) Fig. 5 - Gate Charge Characteristics Fig. 7 - Switching Times vs. IC 102 104 VCC = 300 V IC = 200 A VGE = ± 15 V TJ = 125 °C Cies 101 td(off) 103 C (nF) t (ns) td(on) tr Coes tf 102 100 Cres 10-1 101 0 5 10 15 20 25 30 35 0 20 40 60 Rg (Ω) VCE (V) Fig. 6 - Typical Capacitance vs. Collector to Emitter Voltage Fig. 8 - Typical Switching Times vs. Gate Resistance Rg 400 350 25 °C 300 IF (A) 250 125 °C 200 150 100 50 0 0 0.5 1 1.5 2 VF (V) Fig. 9 - Diode Typical Forward Characteristics Revision: 10-Jun-15 Document Number: 94762 4 For technical questions within your region: [email protected], [email protected], [email protected] THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000 VS-GA200TH60S www.vishay.com Vishay Semiconductors 100 ZthJC (K/W) Diode 10-1 IGBT 10-2 10-3 10-3 10-2 10-1 100 t (s) Fig. 10 - Diode Transient Thermal Impedance CIRCUIT CONFIGURATION 6 7 1 2 3 5 4 LINKS TO RELATED DOCUMENTS Dimensions www.vishay.com/doc?95525 Revision: 10-Jun-15 Document Number: 94762 5 For technical questions within your region: [email protected], [email protected], [email protected] THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000 Outline Dimensions www.vishay.com Vishay Semiconductors Double INT-A-PAK DIMENSIONS in millimeters (inches) 26 23 ± 0.3 6 7.2 ± 0.6 31 ± 0.5 2.8 x 0.5 16 3-M6 30.5 ± 0.5 Mounting depth max. 11 Ø 6. 4 ± 28 ± 0.3 28 ± 0.3 20.1 0. 2 6 22 35.4 27 ± 0.4 3 15 ± 0.4 2 30 48 ± 0.4 61.4 1 6 93 ± 0.4 106.4 Revision: 27-May-13 Document Number: 95525 1 For technical questions within your region: [email protected], [email protected], [email protected] THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000 Legal Disclaimer Notice www.vishay.com Vishay Disclaimer ALL PRODUCT, PRODUCT SPECIFICATIONS AND DATA ARE SUBJECT TO CHANGE WITHOUT NOTICE TO IMPROVE RELIABILITY, FUNCTION OR DESIGN OR OTHERWISE. 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We confirm that all the products identified as being compliant to IEC 61249-2-21 conform to JEDEC JS709A standards. Revision: 02-Oct-12 1 Document Number: 91000