VS-GA200TH60S Datasheet

VS-GA200TH60S
www.vishay.com
Vishay Semiconductors
Molding Type Module IGBT,
2-in-1 Package, 600 V and 200 A
FEATURES
• High short circuit capability
• 10 μs short circuit capability
• VCE(on) with positive temperature coefficient
• Maximum junction temperature 150 °C
• Latch-up free
• Low inductance case
Double INT-A-PAK
• Fast and soft reverse recovery antiparallel FWD
• Isolated copper baseplate using DCB (Direct Copper
Bonding) technology
• Material categorization: for definitions of compliance
please see www.vishay.com/doc?99912
PRODUCT SUMMARY
TYPICAL APPLICATIONS
VCES
600 V
• UPS
IC at TC = 80 °C
200 A
• Switching mode power supplies
VCE(on) (typical)
at IC = 200 A, 25 °C
1.9 V
• Electronic welders
Speed
DC to 1 kHz
Package
Double INT-A-PAK
Circuit
Half bridge
DESCRIPTION
Vishay’s IGBT power module provides ultra low conduction
loss as well as short circuit ruggedness. It is designed for
applications such as general UPS and SMPS.
ABSOLUTE MAXIMUM RATINGS (TC = 25 °C unless otherwise noted)
PARAMETER
SYMBOL
TEST CONDITIONS
MAX.
Collector to emitter voltage
VCES
600
Gate to emitter voltage
VGES
± 20
Collector current
Pulsed collector current
IC
ICM (1)
UNITS
V
TC = 25 °C
260
TC = 80 °C
200
tp = 1 ms
400
TC = 80 °C
200
A
Diode continuous forward current
IF
Diode maximum forward current
IFM
tp = 1 ms
400
Maximum power dissipation
PD
TJ = 150 °C
1042
W
Short circuit withstand time
tSC
TC = 125 °C
10
μs
f = 50 Hz, t = 1 min
2500
V
VR= 0 V, t = 10 ms, TJ = 125 °C
4900
A2s
RMS isolation voltage
I2t-value,
diode
VISOL
I2t
Note
(1) Repetitive rating: pulse width limited by maximum junction temperature.
Revision: 10-Jun-15
Document Number: 94762
1
For technical questions within your region: [email protected], [email protected], [email protected]
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
VS-GA200TH60S
www.vishay.com
Vishay Semiconductors
IGBT ELECTRICAL SPECIFICATIONS (TC = 25 °C unless otherwise noted)
PARAMETER
Collector to emitter breakdown voltage
SYMBOL
V(BR)CES
Collector to emitter voltage
VCE(on)
Gate to emitter threshold voltage
VGE(th)
TEST CONDITIONS
TJ = 25 °C
MIN.
TYP.
MAX.
600
-
-
VGE = 15 V, IC = 200 A, TJ = 25 °C
-
1.9
-
VGE = 15 V, IC = 200 A, TJ = 125 °C
-
2.3
-
VCE = VGE, IC = 0.25 mA, TJ = 25 °C
3.5
4.5
5.5
UNITS
V
Collector cut-off current
ICES
VCE = VCES, VGE = 0 V, TJ = 25 °C
-
-
5.0
μA
Gate to emitter leakage current
IGES
VGE = VGES, VCE = 0 V, TJ = 25 °C
-
-
400
nA
UNITS
SWITCHING CHARACTERISTICS
PARAMETER
Turn-on delay time
Rise time
Turn-off delay time
SYMBOL
MIN.
TYP.
MAX.
td(on)
-
106
-
tr
-
45
-
-
460
-
td(off)
TEST CONDITIONS
VCC = 300 V, IC = 200 A, Rg = 4.7 ,
VGE = ± 15 V, TJ = 25 °C
-
51
-
Turn-on switching loss
Eon
-
4.2
-
Turn-off switching loss
Eoff
-
9.0
-
Turn-on delay time
td(on)
-
120
-
tr
-
68
-
-
510
-
-
70
-
Fall time
Rise time
Turn-off delay time
Fall time
tf
td(off)
tf
VCC = 300 V, IC = 200 A, Rg = 4.7 ,
VGE = ± 15 V, TJ = 125 °C
Turn-on switching loss
Eon
-
5.1
-
Turn-off switching loss
Eoff
-
11.3
-
Input capacitance
Cies
Output capacitance
Coes
Reverse transfer capacitance
Cres
SC data
ISC
Stray inductance
LCE
Module lead resistance, terminal to chip
RCC’+EE’
VGE = 0 V, VCE = 25 V, f = 1.0 MHz
tsc  10 μs, VGE = 15 V, TJ = 125 °C, 
VCC = 300 V, VCEM  600 V
TC = 25 °C
ns
mJ
ns
mJ
-
13.1
-
-
0.71
-
-
0.38
-
-
650
-
A
-
-
20
nH
-
0.35
-
m
MIN.
TYP.
MAX.
UNITS
nF
DIODE ELECTRICAL SPECIFICATIONS (TC = 25 °C unless otherwise noted)
PARAMETER
SYMBOL
Diode forward voltage
VF
Diode reverse recovery charge
Qrr
Diode peak reverse recovery current
Irr
Diode reverse recovery energy
Erec
TEST CONDITIONS
IF = 200 A
IF = 200 A, VR = 300 V,
dI/dt = -6000 A/μs,
VGE = -15 V
TJ = 25 °C
-
1.4
1.6
TJ = 125 °C
-
1.6
1.8
TJ = 25 °C
-
9
-
TJ = 125 °C
-
16
-
TJ = 25 °C
-
140
-
TJ = 125 °C
-
165
-
TJ = 25 °C
-
2.4
-
TJ = 125 °C
-
4.2
-
V
μC
A
mJ
Revision: 10-Jun-15
Document Number: 94762
2
For technical questions within your region: [email protected], [email protected], [email protected]
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
VS-GA200TH60S
www.vishay.com
Vishay Semiconductors
THERMAL AND MECHANICAL SPECIFICATIONS
PARAMETER
SYMBOL
Operating junction temperature range
Storage temperature range
TEST CONDITIONS
MIN.
TYP.
MAX.
TJ
-40
-
150
TSTG
-40
-
125
-
-
0.12
-
-
0.27
-
0.03
-
°C
IGBT
Junction to case
RthJC
Diode
Case to sink
Conductive grease applied
RthCS
Power terminal screw: M6
2.5 to 5.0
Mounting screw: M6
3.0 to 6.0
Mounting torque
K/W
Nm
Weight
325
20
400
VGE = 15 V
VCC = 300 V
Rg = 4.7 Ω
VGE = ± 15 V
TJ = 125 °C
18
350
16
300
Eon, Eoff (mJ)
25 °C
250
IC (A)
UNITS
125 °C
200
150
14
g
Eoff
12
Eon
10
8
6
100
4
50
2
0
0
0
1
2
3
0
4
200
300
400
VCE (V)
IC (A)
Fig. 1 - Typical Output Characteristics
Fig. 3 - Switching Loss vs. Collector Current
30
400
VCC = 300 V
IC = 200 A
VGE = ± 15 V
TJ = 125 °C
VCE = 20 V
350
25
Eon, Eoff (mJ)
25 °C
300
125 °C
250
IC (A)
100
200
150
Eon
20
Eoff
15
10
100
5
50
0
0
4
8
6
10
0
5
10
15
20
25
VGE (V)
Rg (Ω)
Fig. 2 - Typical Transfer Characteristics
Fig. 4 - Switching Loss vs. Gate Resistor
30
Revision: 10-Jun-15
Document Number: 94762
3
For technical questions within your region: [email protected], [email protected], [email protected]
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
VS-GA200TH60S
www.vishay.com
Vishay Semiconductors
20
103
VCC = 300 V
18
td(off)
16
12
t (ns)
VGE (V)
14
10
8
td(on)
tr
102
tf
6
VCC = 300 V
Rg = 4.7 Ω
VGE = ± 15 V
TJ = 125 °C
4
IC = 100 A
2
TJ = 25 °C
0
0
100
200
300
400
500
600
101
700
0
200
100
Qg (nC)
300
400
IC (A)
Fig. 5 - Gate Charge Characteristics
Fig. 7 - Switching Times vs. IC
102
104
VCC = 300 V
IC = 200 A
VGE = ± 15 V
TJ = 125 °C
Cies
101
td(off)
103
C (nF)
t (ns)
td(on)
tr
Coes
tf
102
100
Cres
10-1
101
0
5
10
15
20
25
30
35
0
20
40
60
Rg (Ω)
VCE (V)
Fig. 6 - Typical Capacitance vs. Collector to Emitter Voltage
Fig. 8 - Typical Switching Times vs. Gate Resistance Rg
400
350
25 °C
300
IF (A)
250
125 °C
200
150
100
50
0
0
0.5
1
1.5
2
VF (V)
Fig. 9 - Diode Typical Forward Characteristics
Revision: 10-Jun-15
Document Number: 94762
4
For technical questions within your region: [email protected], [email protected], [email protected]
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
VS-GA200TH60S
www.vishay.com
Vishay Semiconductors
100
ZthJC (K/W)
Diode
10-1
IGBT
10-2
10-3
10-3
10-2
10-1
100
t (s)
Fig. 10 - Diode Transient Thermal Impedance
CIRCUIT CONFIGURATION
6
7
1
2
3
5
4
LINKS TO RELATED DOCUMENTS
Dimensions
www.vishay.com/doc?95525
Revision: 10-Jun-15
Document Number: 94762
5
For technical questions within your region: [email protected], [email protected], [email protected]
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
Outline Dimensions
www.vishay.com
Vishay Semiconductors
Double INT-A-PAK
DIMENSIONS in millimeters (inches)
26
23 ± 0.3
6
7.2 ± 0.6
31 ± 0.5
2.8 x 0.5
16
3-M6
30.5 ± 0.5
Mounting depth max. 11
Ø
6.
4
±
28 ± 0.3
28 ± 0.3
20.1
0.
2
6
22
35.4
27 ± 0.4
3
15 ± 0.4
2
30
48 ± 0.4
61.4
1
6
93 ± 0.4
106.4
Revision: 27-May-13
Document Number: 95525
1
For technical questions within your region: [email protected], [email protected], [email protected]
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
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Revision: 02-Oct-12
1
Document Number: 91000