VS-GB300AH120N www.vishay.com Vishay Semiconductors Molding Type Module IGBT, 1-in-1 Package, 1200 V and 300 A FEATURES • High short circuit capability, self limiting to 6 x IC • 10 μs short circuit capability • VCE(on) with positive temperature coefficient • Low inductance case • Fast and soft reverse recovery antiparallel FWD • Isolated copper baseplate using DCB (Direct Copper Bonding) technology • Material categorization: for definitions of compliance please see www.vishay.com/doc?99912 Double INT-A-PAK TYPICAL APPLICATIONS PRODUCT SUMMARY • Switching mode power supplies VCES 1200 V IC at TC = 80 °C 300 A VCE(on) (typical) at IC = 300 A, 25 °C 1.90 V Speed 8 kHz to 30 kHz Package Double INT-A-PAK Circuit Single switch with AP diode • AC inverter drives • Electronic welders at fsw up to 20 kHz DESCRIPTION Vishay’s IGBT power module provides ultralow conduction loss as well as short circuit ruggedness. It is designed for applications such as general inverters and UPS. ABSOLUTE MAXIMUM RATINGS (TC = 25 °C unless otherwise noted) PARAMETER SYMBOL TEST CONDITIONS MAX. Collector to emitter voltage VCES 1200 Gate to emitter voltage VGES ± 20 Collector current at TJ = 150 °C Pulsed collector current IC ICM (1) UNITS V TC = 25 °C 620 TC = 80 °C 300 TC = 80 °C 600 A 300 Diode continuous forward current IF Diode maximum forward current IFM Maximum power dissipation PD TJ = 150 °C 2500 W Short circuit withstand time tSC TJ = 125 °C 10 μs I2t-value, diode I2t VR = 0 V, t = 10 ms, TJ = 125 °C 19 000 A2s 2500 V RMS isolation voltage VISOL 600 f = 50 Hz, t = 1 min Note (1) Repetitive rating: pulse width limited by maximum junction temperature. Revision: 22-Oct-15 Document Number: 93475 1 For technical questions within your region: [email protected], [email protected], [email protected] THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000 VS-GB300AH120N www.vishay.com Vishay Semiconductors IGBT ELECTRICAL SPECIFICATIONS (TC = 25 °C unless otherwise noted) PARAMETER Collector to emitter breakdown voltage SYMBOL V(BR)CES TEST CONDITIONS TJ = 25 °C MIN. TYP. MAX. 1200 - - VGE = 15 V, IC = 300 A, TJ = 25 °C - 1.9 - VGE = 15 V, IC = 300 A, TJ = 125 °C - 2.1 - 5 6.2 7.0 UNITS Collector to emitter saturation voltage VCE(on) V Gate to emitter threshold voltage VGE(th) VCE = VGE, IC = 12 mA, TJ = 25 °C Zero gate voltage collector current ICES VCE = VCES, VGE = 0 V, TJ = 25 °C - - 5.0 mA Gate to emitter leakage current IGES VGE = VGES, VCE = 0 V, TJ = 25 °C - - 400 nA UNITS SWITCHING CHARACTERISTICS PARAMETER Turn-on delay time Rise time Turn-off delay time SYMBOL MIN. TYP. MAX. td(on) - 90 - tr - 55 - - 460 - td(off) TEST CONDITIONS VCC = 600 V, IC = 300 A, Rg = 4.7 , VGE = ± 15 V, TJ = 25 °C - 55 - Turn-on switching loss Eon - 28 - Turn-off switching loss Eoff - 25 - Turn-on delay time td(on) - 110 - tr - 60 - - 500 - Fall time Rise time Turn-off delay time Fall time tf td(off) tf VCC = 600 V, IC = 300 A, Rg = 4.7 , VGE = ± 15 V, TJ = 125 °C - 60 - Turn-on switching loss Eon - 31 - Turn-off switching loss Eoff - 27 - Input capacitance Cies Output capacitance Coes Reverse transfer capacitance Cres SC data ISC Stray inductance LCE Module lead resistance, terminal to chip RCC’+EE’ VGE = 0 V, VCE = 25 V, f = 1.0 MHz tsc 10 μs, VGE = 15 V, TJ = 125 °C, VCC = 900 V, VCEM 1200 V TC = 25 °C ns mJ ns mJ - 21 - - 1.5 - - 0.9 - - 1300 - A - - 20 nH - 0.18 - m MIN. TYP. MAX. UNITS nF DIODE ELECTRICAL SPECIFICATIONS (TC = 25 °C unless otherwise noted) PARAMETER SYMBOL Diode forward voltage VF Diode reverse recovery charge Qrr Diode peak reverse recovery current Irr Diode reverse recovery energy Erec TEST CONDITIONS IF = 300 A IF = 300 A, VR = 600 V, dI/dt = -2400 A/μs, VGE = -15 V TJ = 25 °C - 2.0 2.4 TJ = 125 °C - 2.2 2.5 TJ = 25 °C - 27 - TJ = 125 °C - 50 - TJ = 25 °C - 120 - TJ = 125 °C - 170 - TJ = 25 °C - 9 - TJ = 125 °C - 20 - V μC A mJ Revision: 22-Oct-15 Document Number: 93475 2 For technical questions within your region: [email protected], [email protected], [email protected] THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000 VS-GB300AH120N www.vishay.com Vishay Semiconductors THERMAL AND MECHANICAL SPECIFICATIONS PARAMETER SYMBOL MIN. TYP. MAX. TJ -40 - 150 TStg -40 - 125 - - 0.05 - - 0.12 - 0.035 - Operating junction temperature range Storage temperature range TEST CONDITIONS °C IGBT Junction to case per module RthJC Diode Case to sink RthCS UNITS Conductive grease applied Power terminal screw: M6 2.5 to 5.0 Mounting screw: M6 3.0 to 6.0 Mounting torque K/W Nm Weight 310 600 g 80 500 60 Eon, Eoff (mJ) IC (A) 400 TJ = 25 °C 300 200 TJ = 125 °C Eon 40 Eoff 20 100 0 0 0 1 2 3 VCE (V) 93475_01 0 600 140 500 120 100 Eon, Eoff (mJ) 300 200 TJ = 125 °C 600 Fig. 3 - Switching Loss vs. Collector Current VCC = 600 V, Rg = 4.7 , VGE = ± 15 V, TJ = 125 °C 400 IC (A) 400 IC (A) 93475_03 Fig. 1 - Typical Output Characteristics VGE = 15 V TJ = 25 °C Eon 80 60 40 100 Eoff 20 0 0 0 93475_02 200 4 8 12 VGE (V) Fig. 2 - Typical Transfer Characteristics VCE = 20 V 16 0 93475_04 10 20 30 40 Rg (Ω) Fig. 4 - Switching Loss vs. Gate Resistor VCC = 600 V, IC = 300 A, VGE = ± 15 V, TJ = 125 °C Revision: 22-Oct-15 Document Number: 93475 3 For technical questions within your region: [email protected], [email protected], [email protected] THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000 VS-GB300AH120N www.vishay.com Vishay Semiconductors 20 1000 16 td(off) VGE (V) 12 td(on) t (ns) 8 4 100 tr tf 0 -4 -8 10 0 1 2 3 4 0 Qg (μC) 93475_05 200 400 600 IC (A) 93475_07 Fig. 7 - Typical Switching Times vs. IC VCC = 600 V, Rg = 4.7 , VGE = ± 15 V, TJ = 125 °C Fig. 5 - Gate Charge Characteristics VCC = 600 V, IC = 300 A, TJ = 25 °C 100 10 000 Cies td(off) 10 Coes 1 td(on) t (ns) C (nF) 1000 tr 100 Cres tf 10 0.1 0 93475_06 5 10 15 20 25 30 0 35 VCE (V) 10 30 40 Rg (Ω) 93475_08 Fig. 6 - Typical Capacitance vs. Collector to Emitter Voltage 20 Fig. 8 - Typical Switching Times vs. Gate Resistance VCC = 600 V, IC = 300 A, VGE = ± 15 V, TJ = 125 °C 400 IF (A) 300 25 °C 200 125 °C 100 0 0 93475_09 1 2 3 VF (V) Fig. 9 - Typical Forward Characteristics (Diode) Revision: 22-Oct-15 Document Number: 93475 4 For technical questions within your region: [email protected], [email protected], [email protected] THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000 VS-GB300AH120N www.vishay.com Vishay Semiconductors 1 Diode ZthJC (K/W) 0.1 IGBT 0.01 0.001 0.0001 0.00001 0.0001 0.001 0.01 0.1 1 tp (s) 93475_10 Fig. 10 - Transient Thermal Impedance CIRCUIT CONFIGURATION 1 3 5 2 LINKS TO RELATED DOCUMENTS Dimensions www.vishay.com/doc?95526 Revision: 22-Oct-15 Document Number: 93475 5 For technical questions within your region: [email protected], [email protected], [email protected] THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000 Legal Disclaimer Notice www.vishay.com Vishay Disclaimer ALL PRODUCT, PRODUCT SPECIFICATIONS AND DATA ARE SUBJECT TO CHANGE WITHOUT NOTICE TO IMPROVE RELIABILITY, FUNCTION OR DESIGN OR OTHERWISE. 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We confirm that all the products identified as being compliant to IEC 61249-2-21 conform to JEDEC JS709A standards. Revision: 02-Oct-12 1 Document Number: 91000