VS-GB100TH120U Datasheet

VS-GB100TH120U
www.vishay.com
Vishay Semiconductors
Molding Type Module IGBT,
2 in 1 Package, 1200 V and 100 A
FEATURES
• NPT IGBT technology
• 10 μs short circuit capability
• Low switching losses
• Rugged with ultrafast performance
• VCE(on) with positive temperature coefficient
• Low inductance case
• Fast and soft reverse recovery antiparallel FWD
Double INT-A-PAK
• Isolated copper baseplate using DCB (Direct Copper
Bonding) technology
• Material categorization: for definitions of compliance
please see www.vishay.com/doc?99912
PRODUCT SUMMARY
TYPICAL APPLICATIONS
VCES
1200 V
IC at TC = 80 °C
100 A
VCE(on) (typical)
at IC = 100 A, 25 °C
3.10 V
Speed
8 kHz to 30 kHz
Package
Double INT-A-PAK
Circuit
Half bridge
• Switching mode power supplies
• Inductive heating
• Electronic welder
DESCRIPTION
Vishay’s IGBT power module provides ultrafast switching
speed as well as short circuit ruggedness. It is designed for
applications such as electronic welders and inductive
heating.

ABSOLUTE MAXIMUM RATINGS (TC = 25 °C unless otherwise noted)
PARAMETER
SYMBOL
TEST CONDITIONS
MAX.
Collector to emitter voltage
VCES
1200
Gate to emitter voltage
VGES
± 20
Collector current
Pulsed collector current
IC
ICM
(1)
V
TC = 25 °C
200
TC = 80 °C
100
tp = 1 ms
200
Diode continuous forward current
IF
100
Diode maximum forward current
IFM(1)
200
Maximum power dissipation
Isolation voltage
PD
VISOL
UNITS
A
TJ = 150 °C
1136
W
f = 50 Hz, t = 1 min
2500
V
Note
(1) Repetitive rating: pulse width limited by maximum junction temperature.
Revision: 10-Jun-15
Document Number: 93413
1
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THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
VS-GB100TH120U
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Vishay Semiconductors
IGBT ELECTRICAL SPECIFICATIONS (TC = 25 °C unless otherwise noted)
PARAMETER
Collector to emitter breakdown voltage
Collector to emitter voltage
SYMBOL
V(BR)CES
VCE(on)
TEST CONDITIONS
MIN.
TYP.
MAX.
1200
-
-
VGE = 15 V, IC = 100 A, TJ = 25 °C
-
3.10
3.60
VGE = 15 V, IC = 100 A, TJ = 125 °C
-
3.45
-
TJ = 25 °C
UNITS
V
VGE(th)
VCE = VGE, IC = 1 mA, TJ = 25 °C
4.4
4.9
6.0
Zero gate voltage collector current
ICES
VCE = VCES, VGE = 0 V, TJ = 25 °C
-
-
5.0
mA
Gate to emitter leakage current
IGES
VGE = VGES, VCE = 0 V, TJ = 25 °C
-
-
400
nA
MIN.
TYP.
MAX.
UNITS
td(on)
-
300
-
tr
-
64
-
-
340
-
-
105
-
Gate to emitter threshold voltage
SWITCHING CHARACTERISTICS
PARAMETER
Turn-on delay time
Rise time
Turn-off delay time
Fall time
SYMBOL
td(off)
tf
TEST CONDITIONS
ns
VCC = 600 V, IC = 100 A, Rg = 5.6 ,
VGE = ± 15 V, L = 200 nH, TJ = 25 °C
Turn-on switching loss
Eon
-
4.76
-
Turn-off switching loss
Eoff
-
4.25
-
Turn-on delay time
td(on)
-
320
-
tr
-
65
-
-
350
-
-
132
-
Rise time
Turn-off delay time
Fall time
td(off)
tf
mJ
ns
VCC = 600 V, IC = 100 A, Rg = 5.6 ,
VGE = ± 15 V, L = 200 nH, TJ = 125 °C
Turn-on switching loss
Eon
-
7.20
-
Turn-off switching loss
Eoff
-
5.50
-
Short circuit withstand time
tSC
-
-
10
Input capacitance
Cies
-
8.45
-
Output capacitance
Coes
-
0.76
-
Reverse transfer capacitance
Cres
-
0.31
-
-
900
-
RGINT
-
2.4
-

LCE
-
-
18
nH
RCC’+EE’
-
0.32
-
m
SC data
Internal gate resistance
Stray inductance
Module lead resistance, terminal to chip
ISC
mJ
TJ = 125 °C
VGE = 0 V, VCE = 20 V, f = 1.0 MHz
tp  10 μs, VGE = ± 15 V, VCC = 600 V,
VCEM  1200 V, TJ = 25 °C
μs
nF
Revision: 10-Jun-15
Document Number: 93413
2
For technical questions within your region: [email protected], [email protected], [email protected]
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
VS-GB100TH120U
www.vishay.com
Vishay Semiconductors
DIODE ELECTRICAL SPECIFICATIONS
PARAMETER
SYMBOL
Diode forward voltage
MIN.
TYP.
MAX.
TC = 25 °C
-
1.82
2.22
TC = 125 °C
-
1.95
-
TC = 25 °C
-
5.4
-
TC = 125 °C
-
11.2
-
TC = 25 °C
-
81
-
TC = 125 °C
-
101
-
TC = 25 °C
-
3.54
-
TC = 125 °C
-
6.57
-
MIN.
TYP.
MAX.
TJ
-40
-
150
TStg
-40
-
125
-
-
0.141
-
-
0.225
-
0.035
-
VF
Diode reverse recovery charge
TEST CONDITIONS
IF = 100 A
Qrr
Diode peak reverse recovery current
Diode reverse recovery energy
Irr
IF = 100 A, VR = 600 V,
dIF/dt = -1900 A/μs,
VGE = -15 V
Erec
UNITS
V
μC
A
mJ
THERMAL AND MECHANICAL SPECIFICATIONS
PARAMETER
SYMBOL
Operating junction temperature range
Storage temperature range
TEST CONDITIONS
°C
IGBT
Junction to case
Diode
Case to sink
RthJC
RthCS
Conductive grease applied
Power terminal screw: M6
2.5 to 5.0
Mounting screw: M6
3.0 to 6.0
Mounting torque
°C/W
Nm
Weight
300
g
200
200
VGE = 15 V
175
180
160
150
TJ = 25 °C
140
IC (A)
125
IC (A)
UNITS
100
100
80
TJ = 125 °C
75
TJ = 125 °C
120
60
50
TJ = 25 °C
40
25
20
0
0
0
1.0
2.0
3.0
4.0
5.0
5
6
7
8
9
10
11
VCE (V)
VGE (V)
Fig. 1 - IGBT Typical Output Characteristics
Fig. 2 - IGBT Typical Transfer Characteristics
Revision: 10-Jun-15
Document Number: 93413
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For technical questions within your region: [email protected], [email protected], [email protected]
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
VS-GB100TH120U
www.vishay.com
Vishay Semiconductors
25
40
VCC = 600 V
Rg = 5.6 Ω
VGE = ± 15 V
TJ = 125 °C
30
Eon, Eoff (mJ)
Eon, Eoff (mJ)
20
15
Eon
10
VCC = 600 V
IC = 100 A
VGE = ± 15 V
TJ = 125 °C
35
25
15
Eoff
10
Eoff
5
Eon
20
5
0
0
0
50
100
150
200
0
10
20
30
40
50
IC (A)
Rg (Ω)
Fig. 3 - Switching Loss vs. IC
Fig. 4 - IGBT Switching Loss vs. Rg
60
250
Chip
200
IC (A)
Module
150
100
Rg = 5.6 Ω
VGE = ± 15 V
TJ = 125 °C
50
0
0
350
700
1050
1400
VCE (V)
Fig. 5 - RBSOA
ZthJC - Thermal Impedance (K/W)
100
IGBT
10-1
10-2
10-3
10-5
10-4
10-3
10-2
10-1
t (s)
Fig. 6 - IGBT Transient Thermal Impedance
Revision: 10-Jun-15
Document Number: 93413
4
For technical questions within your region: [email protected], [email protected], [email protected]
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
VS-GB100TH120U
www.vishay.com
Vishay Semiconductors
200
12
175
TJ = 25 °C
150
8
E (mJ)
125
IF (A)
VCC = 600 V
Rg = 5.6 Ω
VGE = ± 15 V
TJ = 125 °C
10
100
75
TJ = 125 °C
6
Erec
4
50
2
25
0
0
0
0.5
1.0
1.5
2.0
2.5
0
3.0
50
100
150
VF (V)
IF (A)
Fig. 7 - Diode Typical Forward Characteristics
Fig. 8 - Diode Switching Loss vs. IF
200
8
7
Erec
6
E (mJ)
5
4
3
VCC = 600 V
IF = 100 A
VGE = ± 15 V
TJ = 125 °C
2
1
0
0
10
20
30
40
50
60
Rg (Ω)
Fig. 9 - Diode Switching Loss vs. Rg
ZthJC - Thermal Impedance (K/W)
100
DIODE
10-1
10-2
10-3
10-3
10-2
10-1
10-0
101
t (s)
Fig. 10 - Diode Transient Thermal Impedance
Revision: 10-Jun-15
Document Number: 93413
5
For technical questions within your region: [email protected], [email protected], [email protected]
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
VS-GB100TH120U
www.vishay.com
Vishay Semiconductors
CIRCUIT CONFIGURATION
6
7
1
2
3
5
4
LINKS TO RELATED DOCUMENTS
Dimensions
www.vishay.com/doc?95525
Revision: 10-Jun-15
Document Number: 93413
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For technical questions within your region: [email protected], [email protected], [email protected]
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
Outline Dimensions
www.vishay.com
Vishay Semiconductors
Double INT-A-PAK
DIMENSIONS in millimeters (inches)
26
23 ± 0.3
6
7.2 ± 0.6
31 ± 0.5
2.8 x 0.5
16
3-M6
30.5 ± 0.5
Mounting depth max. 11
Ø
6.
4
±
28 ± 0.3
28 ± 0.3
20.1
0.
2
6
22
35.4
27 ± 0.4
3
15 ± 0.4
2
30
48 ± 0.4
61.4
1
6
93 ± 0.4
106.4
Revision: 27-May-13
Document Number: 95525
1
For technical questions within your region: [email protected], [email protected], [email protected]
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
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Revision: 02-Oct-12
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Document Number: 91000