VS-GB100TH120U www.vishay.com Vishay Semiconductors Molding Type Module IGBT, 2 in 1 Package, 1200 V and 100 A FEATURES • NPT IGBT technology • 10 μs short circuit capability • Low switching losses • Rugged with ultrafast performance • VCE(on) with positive temperature coefficient • Low inductance case • Fast and soft reverse recovery antiparallel FWD Double INT-A-PAK • Isolated copper baseplate using DCB (Direct Copper Bonding) technology • Material categorization: for definitions of compliance please see www.vishay.com/doc?99912 PRODUCT SUMMARY TYPICAL APPLICATIONS VCES 1200 V IC at TC = 80 °C 100 A VCE(on) (typical) at IC = 100 A, 25 °C 3.10 V Speed 8 kHz to 30 kHz Package Double INT-A-PAK Circuit Half bridge • Switching mode power supplies • Inductive heating • Electronic welder DESCRIPTION Vishay’s IGBT power module provides ultrafast switching speed as well as short circuit ruggedness. It is designed for applications such as electronic welders and inductive heating. ABSOLUTE MAXIMUM RATINGS (TC = 25 °C unless otherwise noted) PARAMETER SYMBOL TEST CONDITIONS MAX. Collector to emitter voltage VCES 1200 Gate to emitter voltage VGES ± 20 Collector current Pulsed collector current IC ICM (1) V TC = 25 °C 200 TC = 80 °C 100 tp = 1 ms 200 Diode continuous forward current IF 100 Diode maximum forward current IFM(1) 200 Maximum power dissipation Isolation voltage PD VISOL UNITS A TJ = 150 °C 1136 W f = 50 Hz, t = 1 min 2500 V Note (1) Repetitive rating: pulse width limited by maximum junction temperature. Revision: 10-Jun-15 Document Number: 93413 1 For technical questions within your region: [email protected], [email protected], [email protected] THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000 VS-GB100TH120U www.vishay.com Vishay Semiconductors IGBT ELECTRICAL SPECIFICATIONS (TC = 25 °C unless otherwise noted) PARAMETER Collector to emitter breakdown voltage Collector to emitter voltage SYMBOL V(BR)CES VCE(on) TEST CONDITIONS MIN. TYP. MAX. 1200 - - VGE = 15 V, IC = 100 A, TJ = 25 °C - 3.10 3.60 VGE = 15 V, IC = 100 A, TJ = 125 °C - 3.45 - TJ = 25 °C UNITS V VGE(th) VCE = VGE, IC = 1 mA, TJ = 25 °C 4.4 4.9 6.0 Zero gate voltage collector current ICES VCE = VCES, VGE = 0 V, TJ = 25 °C - - 5.0 mA Gate to emitter leakage current IGES VGE = VGES, VCE = 0 V, TJ = 25 °C - - 400 nA MIN. TYP. MAX. UNITS td(on) - 300 - tr - 64 - - 340 - - 105 - Gate to emitter threshold voltage SWITCHING CHARACTERISTICS PARAMETER Turn-on delay time Rise time Turn-off delay time Fall time SYMBOL td(off) tf TEST CONDITIONS ns VCC = 600 V, IC = 100 A, Rg = 5.6 , VGE = ± 15 V, L = 200 nH, TJ = 25 °C Turn-on switching loss Eon - 4.76 - Turn-off switching loss Eoff - 4.25 - Turn-on delay time td(on) - 320 - tr - 65 - - 350 - - 132 - Rise time Turn-off delay time Fall time td(off) tf mJ ns VCC = 600 V, IC = 100 A, Rg = 5.6 , VGE = ± 15 V, L = 200 nH, TJ = 125 °C Turn-on switching loss Eon - 7.20 - Turn-off switching loss Eoff - 5.50 - Short circuit withstand time tSC - - 10 Input capacitance Cies - 8.45 - Output capacitance Coes - 0.76 - Reverse transfer capacitance Cres - 0.31 - - 900 - RGINT - 2.4 - LCE - - 18 nH RCC’+EE’ - 0.32 - m SC data Internal gate resistance Stray inductance Module lead resistance, terminal to chip ISC mJ TJ = 125 °C VGE = 0 V, VCE = 20 V, f = 1.0 MHz tp 10 μs, VGE = ± 15 V, VCC = 600 V, VCEM 1200 V, TJ = 25 °C μs nF Revision: 10-Jun-15 Document Number: 93413 2 For technical questions within your region: [email protected], [email protected], [email protected] THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000 VS-GB100TH120U www.vishay.com Vishay Semiconductors DIODE ELECTRICAL SPECIFICATIONS PARAMETER SYMBOL Diode forward voltage MIN. TYP. MAX. TC = 25 °C - 1.82 2.22 TC = 125 °C - 1.95 - TC = 25 °C - 5.4 - TC = 125 °C - 11.2 - TC = 25 °C - 81 - TC = 125 °C - 101 - TC = 25 °C - 3.54 - TC = 125 °C - 6.57 - MIN. TYP. MAX. TJ -40 - 150 TStg -40 - 125 - - 0.141 - - 0.225 - 0.035 - VF Diode reverse recovery charge TEST CONDITIONS IF = 100 A Qrr Diode peak reverse recovery current Diode reverse recovery energy Irr IF = 100 A, VR = 600 V, dIF/dt = -1900 A/μs, VGE = -15 V Erec UNITS V μC A mJ THERMAL AND MECHANICAL SPECIFICATIONS PARAMETER SYMBOL Operating junction temperature range Storage temperature range TEST CONDITIONS °C IGBT Junction to case Diode Case to sink RthJC RthCS Conductive grease applied Power terminal screw: M6 2.5 to 5.0 Mounting screw: M6 3.0 to 6.0 Mounting torque °C/W Nm Weight 300 g 200 200 VGE = 15 V 175 180 160 150 TJ = 25 °C 140 IC (A) 125 IC (A) UNITS 100 100 80 TJ = 125 °C 75 TJ = 125 °C 120 60 50 TJ = 25 °C 40 25 20 0 0 0 1.0 2.0 3.0 4.0 5.0 5 6 7 8 9 10 11 VCE (V) VGE (V) Fig. 1 - IGBT Typical Output Characteristics Fig. 2 - IGBT Typical Transfer Characteristics Revision: 10-Jun-15 Document Number: 93413 3 For technical questions within your region: [email protected], [email protected], [email protected] THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000 VS-GB100TH120U www.vishay.com Vishay Semiconductors 25 40 VCC = 600 V Rg = 5.6 Ω VGE = ± 15 V TJ = 125 °C 30 Eon, Eoff (mJ) Eon, Eoff (mJ) 20 15 Eon 10 VCC = 600 V IC = 100 A VGE = ± 15 V TJ = 125 °C 35 25 15 Eoff 10 Eoff 5 Eon 20 5 0 0 0 50 100 150 200 0 10 20 30 40 50 IC (A) Rg (Ω) Fig. 3 - Switching Loss vs. IC Fig. 4 - IGBT Switching Loss vs. Rg 60 250 Chip 200 IC (A) Module 150 100 Rg = 5.6 Ω VGE = ± 15 V TJ = 125 °C 50 0 0 350 700 1050 1400 VCE (V) Fig. 5 - RBSOA ZthJC - Thermal Impedance (K/W) 100 IGBT 10-1 10-2 10-3 10-5 10-4 10-3 10-2 10-1 t (s) Fig. 6 - IGBT Transient Thermal Impedance Revision: 10-Jun-15 Document Number: 93413 4 For technical questions within your region: [email protected], [email protected], [email protected] THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000 VS-GB100TH120U www.vishay.com Vishay Semiconductors 200 12 175 TJ = 25 °C 150 8 E (mJ) 125 IF (A) VCC = 600 V Rg = 5.6 Ω VGE = ± 15 V TJ = 125 °C 10 100 75 TJ = 125 °C 6 Erec 4 50 2 25 0 0 0 0.5 1.0 1.5 2.0 2.5 0 3.0 50 100 150 VF (V) IF (A) Fig. 7 - Diode Typical Forward Characteristics Fig. 8 - Diode Switching Loss vs. IF 200 8 7 Erec 6 E (mJ) 5 4 3 VCC = 600 V IF = 100 A VGE = ± 15 V TJ = 125 °C 2 1 0 0 10 20 30 40 50 60 Rg (Ω) Fig. 9 - Diode Switching Loss vs. Rg ZthJC - Thermal Impedance (K/W) 100 DIODE 10-1 10-2 10-3 10-3 10-2 10-1 10-0 101 t (s) Fig. 10 - Diode Transient Thermal Impedance Revision: 10-Jun-15 Document Number: 93413 5 For technical questions within your region: [email protected], [email protected], [email protected] THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000 VS-GB100TH120U www.vishay.com Vishay Semiconductors CIRCUIT CONFIGURATION 6 7 1 2 3 5 4 LINKS TO RELATED DOCUMENTS Dimensions www.vishay.com/doc?95525 Revision: 10-Jun-15 Document Number: 93413 6 For technical questions within your region: [email protected], [email protected], [email protected] THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000 Outline Dimensions www.vishay.com Vishay Semiconductors Double INT-A-PAK DIMENSIONS in millimeters (inches) 26 23 ± 0.3 6 7.2 ± 0.6 31 ± 0.5 2.8 x 0.5 16 3-M6 30.5 ± 0.5 Mounting depth max. 11 Ø 6. 4 ± 28 ± 0.3 28 ± 0.3 20.1 0. 2 6 22 35.4 27 ± 0.4 3 15 ± 0.4 2 30 48 ± 0.4 61.4 1 6 93 ± 0.4 106.4 Revision: 27-May-13 Document Number: 95525 1 For technical questions within your region: [email protected], [email protected], [email protected] THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000 Legal Disclaimer Notice www.vishay.com Vishay Disclaimer ALL PRODUCT, PRODUCT SPECIFICATIONS AND DATA ARE SUBJECT TO CHANGE WITHOUT NOTICE TO IMPROVE RELIABILITY, FUNCTION OR DESIGN OR OTHERWISE. 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We confirm that all the products identified as being compliant to IEC 61249-2-21 conform to JEDEC JS709A standards. Revision: 02-Oct-12 1 Document Number: 91000