VS-VSKT320PbF Series www.vishay.com Vishay Semiconductors Thyristor/Thyristor (MAGN-A-PAK Power Modules), 320 A FEATURES • High voltage • Electrically isolated base plate • 3600 VRMS isolating voltage • Industrial standard package • Simplified mechanical designs, rapid assembly • High surge capability • Large creepage distances • UL approved file E78996 • Designed and qualified for industrial level • Material categorization: for definitions of compliance please see www.vishay.com/doc?99912 MAGN-A-PAK DESCRIPTION PRODUCT SUMMARY IT(AV) 320 A Type Modules - Thyristor, Standard Package MAGN-A-PAK Circuit Two SCRs doubler circuit This new VSK series of MAGN-A-PAK modules uses high voltage power thyristor/thyristor in doubler circuit configuration. The semiconductors are electrically isolated from the metal base, allowing common heatsinks and compact assemblies to be built. They can be interconnected to form single phase or three phase bridges or as AC-switches when modules are connected in anti-parallel mode. These modules are intended for general purpose applications such as battery chargers, welders, motor drives, UPS, etc. MAJOR RATINGS AND CHARACTERISTICS SYMBOL CHARACTERISTICS 70 °C IT(AV) VALUES UNITS 320 IT(RMS) 710 ITSM I2t 50 Hz 9000 60 Hz 9420 50 Hz 405 60 Hz 370 I2t A kA2s kA2s 4050 VDRM/VRRM TJ Range 1200 to 1600 V -40 to 130 °C ELECTRICAL SPECIFICATIONS VOLTAGE RATINGS TYPE NUMBER VS-VSKT320- VOLTAGE CODE VRRM/VDRM, MAXIMUM REPETITIVE PEAK REVERSE AND OFF-STATE BLOCKING VOLTAGE V VRSM, MAXIMUM NON-REPETITIVE PEAK REVERSE VOLTAGE V 12 1200 1300 16 1600 1700 IRRM/IDRM AT 130 °C MAXIMUM mA 50 Revision: 17-Jul-14 Document Number: 94085 1 For technical questions within your region: [email protected], [email protected], [email protected] THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000 VS-VSKT320PbF Series www.vishay.com Vishay Semiconductors ON-STATE CONDUCTION PARAMETER Maximum average on-state current at case temperature Maximum RMS on-state current SYMBOL IT(AV) IT(RMS) TEST CONDITIONS 180° conduction, half sine wave As AC switch ITSM t = 10 ms 100 % VRRM reapplied t = 10 ms I2t Maximum I2t for fusing I2t A 70 °C 9000 No voltage reapplied t = 8.3 ms t = 8.3 ms Maximum I2t for fusing UNITS 320 710 t = 10 ms Maximum peak, one-cycle on-state non-repetitive, surge current VALUES No voltage reapplied t = 8.3 ms t = 10 ms 9420 7570 Sinusoidal half wave, initial TJ = TJ maximum 100 % VRRM reapplied t = 8.3 ms 7920 405 370 287 4050 VT(TO)1 (16.7 % x x IT(AV) < I < x IT(AV)), TJ = TJ maximum 0.80 High level value of threshold voltage VT(TO)2 (I > x IT(AV)), TJ = TJ maximum 1.03 Low level value on-state slope resistance rt1 (16.7 % x x IT(AV) < I < x IT(AV)), TJ = TJ maximum 0.75 High level value on-state slope resistance rt2 (I > x IT(AV)), TJ = TJ maximum 0.53 ITM = 750 A, TJ = TJ maximum, 180° conduction, average power = VT(TO) x IT(AV) + rf x (IT(RMS))2 1.37 ITM = 750 A, TJ = 25 °C, 180° conduction, average power = VT(TO) x IT(AV) + rt x (IT(RMS))2 1.40 IH Anode supply = 12 V, initial IT = 30 A, TJ = 25 °C 500 IL Anode supply = 12 V, resistive load = 1 , gate pulse: 10 V, 100 μs, TJ = 25 °C 1000 Maximum holding current Maximum latching current VTM, VFM, kA2s 262 t = 0.1 ms to 10 ms, no voltage reapplied Low level value or threshold voltage Maximum peak on-state or forward voltage drop A kA2s V m V mA SWITCHING PARAMETER SYMBOL Typical delay time td Typical rise time tr Typical turn-off time range tq TEST CONDITIONS TJ = 25 °C, gate current = 1 A dIg/dt = 1 A/μs Vd = 0.67 % VDRM ITM = 300 A; dI/dt = 15 A/μs; TJ = TJ maximum; VR = 50 V; dV/dt = 20 V/μs; gate 0 V, 100 VALUES UNITS 1.0 2.0 μs 200 to 350 BLOCKING PARAMETER SYMBOL TEST CONDITIONS VALUES UNITS 50 mA 50 Hz, circuit to base, all terminals shorted, 25 °C, 1 s 3600 V TJ = TJ maximum, exponential to 67 % rated VDRM 1000 V/μs Maximum peak reverse and off-state leakage current IRRM, IDRM TJ = TJ maximum RMS insulation voltage VINS Critical rate of rise of off-state voltage dV/dt Revision: 17-Jul-14 Document Number: 94085 2 For technical questions within your region: [email protected], [email protected], [email protected] THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000 VS-VSKT320PbF Series www.vishay.com Vishay Semiconductors TRIGGERING PARAMETER SYMBOL TEST CONDITIONS VALUES PGM tp 5 ms, TJ = TJ maximum 10.0 Maximum average gate power PG(AV) f = 50 Hz, TJ = TJ maximum 2.0 Maximum peak gate current + IGM tp 5 ms, TJ = TJ maximum 3.0 Maximum peak negative gate voltage - VGT tp 5 ms, TJ = TJ maximum 5.0 TJ = - 40 °C 4.0 Maximum peak gate power Maximum required DC gate voltage to trigger VGT Anode supply = 12 V, resistive load; Ra = 1 TJ = 25 °C TJ = TJ maximum IGT W A V 3.0 2.0 TJ = - 40 °C Maximum required DC gate current to trigger UNITS 350 Anode supply = 12 V, resistive load; Ra = 1 TJ = 25 °C 200 TJ = TJ maximum 100 mA Maximum gate voltage that will not trigger VGD TJ = TJ maximum, rated VDRM applied 0.25 V Maximum gate current that will not trigger IGD TJ = TJ maximum, rated VDRM applied 10.0 mA Maximum rate of rise of turned-on current dI/dt TJ = TJ maximum, ITM = 400 A, rated VDRM applied 500 A/μs VALUES UNITS -40 to 130 °C THERMAL AND MECHANICAL SPECIFICATIONS PARAMETER SYMBOL Junction operating and storage temperature range TEST CONDITIONS TJ, TStg Maximum thermal resistance, junction to case per junction RthJC DC operation 0.125 Typical thermal resistance, case to heatsink per module RthCS Mounting surface flat, smooth and greased 0.02 A mounting compound is recommended and the torque should be rechecked after a period of about 3 hours to allow for the spread of the compound. 4 to 6 K/W MAP to heatsink Mounting torque ± 10 % busbar to MAP Approximate weight Nm 500 g 17.8 oz. Case style MAGN-A-PAK R CONDUCTION PER JUNCTION DEVICES VSKT320- SINUSOIDAL CONDUCTION AT TJ MAXIMUM RECTANGULAR CONDUCTION AT TJ MAXIMUM 180° 120° 90° 60° 30° 180° 120° 90° 60° 30° 0.009 0.010 0.013 0.020 0.032 0.007 0.011 0.015 0.020 0.033 UNITS K/W Note • Table shows the increment of thermal resistance RthJC when devices operate at different conduction angles than DC Revision: 17-Jul-14 Document Number: 94085 3 For technical questions within your region: [email protected], [email protected], [email protected] THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000 VS-VSKT320PbF Series www.vishay.com Vishay Semiconductors Maximum Allowable Case Temperature (°C) RthJC(DC) = 0.125 K/W 120 110 Ø Conduction angle 100 90 30° 80 60° 90° 120° 70 180° Maximum Average On-State Power Loss (W) 130 60 0 50 100 150 200 250 300 350 Average On-State Current (A) 94085_01 650 600 550 500 450 400 350 300 250 200 150 100 50 0 0 200 300 400 500 8000 RthJC(DC) = 0.125 K/W 110 100 Ø Conduction angle 90 80 30° 60° 70 90° 60 At any rated load condition and with rated VRRM applied following surge. Initial TJ = 130 °C 7500 120 Peak Half Sine Wave On-State Current (A) Maximum Allowable Case Temperature (°C) 100 Average On-State Current (A) Fig. 4 - On-State Power Loss Characteristics 130 DC 120° 7000 60 Hz 0.0083 s 50 Hz 0.0100 s 6500 6000 5500 5000 4500 4000 180° Per junction 3500 50 0 100 200 300 400 1 500 Average On-State Current (A) 94085_02 10 100 Number of Equal Amplitude Half Cycle Current Pulses (N) 94085_05 Fig. 5 - Maximum Non-Repetitive Surge Current Fig. 2 - Current Ratings Characteristics 500 9000 180° 120° 90° 60° 30° 450 400 350 300 RMS limit 250 200 150 Ø Conduction angle Per Junction TJ = 130 °C 100 50 100 200 300 7000 No voltage reapplied Rated VRRM reapplied 6000 5000 4000 Per junction 0 0 Maximum non-repetitive surge current versus pulse train duration. Control of conduction may not be maintained. Initial TJ = 130 °C 8000 Peak Half Sine Wave On-State Current (A) Maximum Average On-State Power Loss (W) RMS limit Ø Conduction angle Per Junction TJ = 130 °C 94085_04 Fig. 1 - Current Ratings Characteristics 94085_03 DC 180° 120° 90° 60° 30° 400 Average On-State Current (A) Fig. 3 - On-State Power Loss Characteristics 3000 0.01 94085_06 0.1 1 Pulse Train Duration (s) Fig. 6 - Maximum Non-Repetitive Surge Current Revision: 17-Jul-14 Document Number: 94085 4 For technical questions within your region: [email protected], [email protected], [email protected] THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000 VS-VSKT320PbF Series Instantaneous On-State Current (A) www.vishay.com Vishay Semiconductors 10 000 TJ = 130 °C 1000 TJ = 25 °C Per junction 100 0.5 1.5 2.5 3.5 4.5 Instantaneous On-State Voltage (V) 94085_07 Fig. 7 - On-State Voltage Drop Characteristics ZthJC - Transient Thermal Impedance (°C/W) 1 Steady state value RthJC = 0.125 K/W (DC operation) 0.1 0.01 0.001 0.001 0.01 0.1 1 10 100 Square Wave Pulse Duration (s) 94085_08 Fig. 8 - Thermal Impedance ZthJC Characteristics ORDERING INFORMATION TABLE Device code VS-VS KT 320 1 2 3 - 16 PbF 4 5 1 - Vishay Semiconductors product 2 - Circuit configuration (see dimensions - link at the end of datasheet) 3 - Current rating 4 - Voltage code x 100 = VRRM (see voltage ratings table) 5 - • None = standard production • PbF = lead (Pb)-free Note • To order the optional hardware go to www.vishay.com/doc?95172 Revision: 17-Jul-14 Document Number: 94085 5 For technical questions within your region: [email protected], [email protected], [email protected] THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000 VS-VSKT320PbF Series www.vishay.com Vishay Semiconductors CIRCUIT CONFIGURATION CIRCUIT DESCRIPTION Two SCRs doubler circuit CIRCUIT CONFIGURATION CODE KT CIRCUIT DRAWING ~ ~ + + - K1 G1 G2 K2 LINKS TO RELATED DOCUMENTS Dimensions www.vishay.com/doc?95086 Revision: 17-Jul-14 Document Number: 94085 6 For technical questions within your region: [email protected], [email protected], [email protected] THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000 Legal Disclaimer Notice www.vishay.com Vishay Disclaimer ALL PRODUCT, PRODUCT SPECIFICATIONS AND DATA ARE SUBJECT TO CHANGE WITHOUT NOTICE TO IMPROVE RELIABILITY, FUNCTION OR DESIGN OR OTHERWISE. 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