Composite Transistors XP1D873 Silicon N-channel junction FET Unit: mm 0.2±0.05 For analog switching 2.1±0.1 2.0±0.1 2 5 3 4 0.9± 0.1 ■ Basic Part Number of Element 2SK1103 × 2 elements 0 to 0.1 ● 0.7±0.1 +0.05 ● 1 0.425 0.12 – 0.02 ● Two elements incorporated into one package. (Drain-coupled FETs) Reduction of the mounting area and assembly cost by one half. Low-frequency and low-noise J-FET. 1.25±0.1 0.2 ● 0.65 ■ Features 0.65 0.425 ■ Absolute Maximum Ratings 1 : Source (FET1) 2 : Drain (FET1, 2) 3 : Source (FET2) (Ta=25˚C) Parameter Symbol Ratings Unit Gate to drain voltage Rating Drain current of element Gate current VGDS –50 V ID 30 mA IG 10 mA Total power dissipation PT 150 mW Overall Channel temperature Tch 150 ˚C Storage temperature Tstg –55 to +150 ˚C Parameter 4 : Gate (FET2) 5 : Gate (FET1) EIAJ : SC–88A S–Mini Type Package (5–pin) Marking Symbol: OC Internal Connection 1 FET 1 5 2 3 ■ Electrical Characteristics 0.2±0.1 FET 2 4 (Ta=25˚C) Symbol Conditions min Drain voltage VGDS IG = –10µA, VDS = 0 –50 Drain current IDSS VDS = 10V, VGS = 0 0.2 Gate cutoff current IGSS VGS = –30V, VDS = 0 Gate to source cutoff voltage VGSC VDS = 10V, ID = 10µA typ Unit 6.0 mA –10 nA –3.5 V V –1.5 1.8 max Mutual conductance gm VDS = 10V, ID = 1mA, f = 1kHz Drain ON resistance RDS(on) VDS = 10mV, VGS = 0 2.5 mS 300 Ω Common source short-circuit input capacitance Ciss VDS = 10V, VGS = 0, f = 1MHz 7 pF Common source reverse transfer capacitance Crss VDS = 10V, VGS = 0, f = 1MHz 1.5 pF Common source short-circuit output capacitance Coss VDS = 10V, VGS = 0, f = 1MHz 1.5 pF 1 Composite Transistors XP1D873 PT — Ta ID — VDS ID — VGS 2.5 2.5 250 2.0 150 100 VGS=0V 1.5 –0.1V –0.2V 1.0 –0.3V –0.4V 20 40 60 0 80 100 120 140 160 1 2 | Yfs | — VGS VDS=10V Ta=25˚C 4 3 IDSS=10mA 2 1 0 –1.6 4 5 0 –1.2 6 –0.8 –0.4 Gate to source voltage VGS (V) 0 VDS=10V Ta=25˚C 2.0 IDSS=10mA 1.5 1.0 0.5 0 2 4 –0.8 –0.6 –0.4 –0.2 0 Ciss, Crss, Coss — VDS 0 –1.2 –1.0 Gate to source voltage VGS (V) | Yfs | — ID 2.5 Forward transfer admittance |Yfs| (mS) 5 3 Drain to source voltage VDS (V) Ambient temperature Ta (˚C) Forward transfer admittance |Yfs| (mS) 75˚C 6 Drain current ID (mA) 8 Common source short-circuit input capacitance, Common source reverse transfer capacitance, Ciss, Crss, Coss (pF) Common source short-circuit output capacitance 0 25˚C 1.0 0 0 2 Ta=–25˚C 1.5 0.5 0.5 50 Drain current ID (mA) 2.0 200 Drain current ID (mA) Total power dissipation PT (mW) Ta=25˚C 10 VGS=0 f=1MHz Ta=25˚C 8 Ciss 6 4 2 Coss Crss 0 1 10 100 Drain to source voltage VDS (V)