PANASONIC 2SK1104

Silicon Junction FETs (Small Signal)
2SK1104
Silicon N-Channel Junction FET
For switching
Complementary to 2SJ164
unit: mm
3.0±0.2
4.0±0.2
■ Features
15.6±0.5
● Low ON-resistance
● Low-noise characteristics
Ratings
Unit
Gate to Drain voltage
VGDS
−65
V
Drain current
ID
20
mA
Gate current
IG
10
mA
Allowable power dissipation
PD
300
mW
Channel temperature
Tch
150
°C
Storage temperature
Tstg
−55 to +150
°C
1
2
3
1.27 1.27
2.0±0.2
Symbol
0.7±0.1
marking
Parameter
+0.2
0.45–0.1
■ Absolute Maximum Ratings (Ta = 25°C)
1: Source
2: Gate
3: Drain
EIAJ: SC-72
New S Type Package
2.54±0.15
■ Electrical Characteristics (Ta = 25°C)
Parameter
Symbol
Conditions
Drain to Source cut-off current
IDSS*
Gate to Source leakage current
IGSS
VGS = −30V, VDS = 0
Gate to Drain voltage
VGDS
IG = −10µA, VDS = 0
Gate to Source cut-off voltage
VGSC
VDS = 10V, ID = 10µA
Forward transfer admittance
| Yfs |
VDS = 10V, ID = 1mA, f = 1kHz
Drain to Source ON-resistance
RDS(on)
VDS = 10mV, VGS = 0
VDS = 10V, VGS = 0
Input capacitance (Common Source) Ciss
Output capacitance (Common Source)
Coss
VDS = 10V, VGS = 0, f = 1MHz
Reverse transfer capacitance (Common Source) Crss
*
min
typ
0.2
max
Unit
6
mA
−10
nA
−65
V
−1.5
1.8
2.5
−3.5
V
mS
250
Ω
7
pF
1.3
pF
1.5
pF
IDSS rank classification
Runk
O
P
Q
R
IDSS (mA)
0.2 to 1
0.6 to 1.5
1 to 3
2.5 to 6
1
Silicon Junction FETs (Small Signal)
PD  Ta
ID  VDS
2.5
Ta=25˚C
350
250
200
150
100
2.0
Drain current ID (mA)
2.0
300
VGS=0V
1.5
– 0.1V
– 0.2V
1.0
– 0.3V
– 0.4V
0.5
Ta=–25˚C
1.5
25˚C
1.0
75˚C
0.5
50
0
0
20
40
60
80 100 120 140 160
0
Ambient temperature Ta (˚C)
1
2
3
4
| Yfs |  VGS
4
3
IDSS=10mA
2
1
Forward transfer admittance |Yfs| (mS)
VDS=10V
Ta=25˚C
– 0.4
0
VDS=10V
Ta=25˚C
2.0
IDSS=10mA
1.5
1.0
0.5
Gate to source voltage VGS (V)
0
1
2
3
4
5
0
Ciss, Coss, Crss  VDS
0
– 0.8
–1.0 – 0.8 – 0.6 – 0.4 – 0.2
Gate to source voltage VGS (V)
| Yfs |  ID
2.5
–1.2
0
–1.2
6
Drain to source voltage VDS (V)
5
0
–1.6
5
6
Drain current ID (mA)
7
8
Input capacitance (Common source), Output capacitance (Common source),
Reverse transfer capacitance (Common source) Ciss,Coss,Crss (pF)
0
Forward transfer admittance |Yfs| (mS)
ID  VGS
2.5
Drain current ID (mA)
Allowable power dissipation PD (mW)
400
2
2SK1104
10
VGS=0
f=1MHz
Ta=25˚C
8
6
Ciss
4
2
Coss
Crss
0
1
3
10
30
100
Drain to source voltage VDS (V)