Composite Transistors XP8081 Silicon N-channel junction FET (Tr1) Silicon NPN epitaxial planer transistor (Tr2) Unit: mm For analog switching (Tr1)/switching (Tr2) 1 6 2 5 3 4 0 to 0.1 2SK1103+UN1213 (transistors with built-in resistor) 0.12 –0.02 0.9±0.1 ● 0.7±0.1 ■ Basic Part Number of Element +0.05 0.2 ● Two elements incorporated into one package. Reduction of the mounting area and assembly cost by one half. 0.425 0.65 ● 2.0±0.1 ■ Features 1.25±0.1 0.65 0.425 0.2±0.05 2.1±0.1 ■ Absolute Maximum Ratings Parameter Gate to drain voltage Tr1 Drain current Gate current (Ta=25˚C) Symbol Ratings Unit VGDS –50 V ID 20 mA IG 10 mA Collector to base voltage VCBO 50 V Collector to emitter voltage VCEO 50 V Collector current IC 100 mA Total power dissipation PT 150 mW Overall Junction temperature Tj 150 ˚C Tstg –55 to +150 ˚C Tr2 Storage temperature 0.2±0.1 1 : Drain (Tr1) 4 : Emitter (Tr2) 2 : Source (Tr1) 5 : Base (Tr2) 3 : Collector (Tr2) 6 : Gate (Tr1) EIAJ : SC–88 S–Mini Type Package (6–pin) Marking Symbol: 9Z Internal Connection 1 Tr1 2 3 6 5 Tr2 4 1 Composite Transistors ■ Electrical Characteristics ● (Ta=25˚C) Tr1 Parameter Symbol Conditions min typ max Unit 2.2 mA Gate to drain voltage VGDS IG = –10µA, VDS = 0 –50 Drain current IDSS VDS = 10V, VGS = 0 0.2 Gate cutoff current IGSS VGS = –30V, VDS = 0 –10 nA Gate to source cutoff voltage VGSC VDS = 10V, ID = 10µA –1.0 V 1.8 V Mutual conductance gm VDS = 10V, ID = 1mA, f = 1kHz Drain resistance RDS(on) VDS = 10mV, VGS = 0 Common source short-circuit input capacitance Ciss VDS = 10V, VGS = 0, f = 1MHz 7 pF Common source reverse transfer capacitance Crss VDS = 10V, VGS = 0, f = 1MHz 1.5 pF Common source short-circuit output capacitance Coss VDS = 10V, VGS = 0, f = 1MHz 1.5 pF ● 2.5 mS 400 Ω Tr2 Parameter Collector to base voltage Collector to emitter voltage Symbol Conditions min VCBO IC = 10µA, IE = 0 50 50 typ max Unit V VCEO IC = 2mA, IB = 0 ICBO VCB = 50V, IE = 0 0.1 ICEO VCE = 50V, IB = 0 0.5 µA IEBO VEB = 6V, IC = 0 0.1 mA Forward current transfer ratio hFE VCE = 10V, IC = 5mA Collector to emitter saturation voltage VCE(sat) IC = 10mA, IB = 0.3mA 0.25 V Output voltage high level VOH VCC = 5V, VB = 0.5V, RL = 1kΩ Output voltage low level VOL VCC = 5V, VB = 3.5V, RL = 1kΩ 0.2 V VCB = 10V, IE = –1mA, f = 200MHz Collector cutoff current Emitter cutoff current 2 XP8081 Transition frequency fT Input resistance R1 Resistance ratio R1/R2 V µA 80 4.9 V 150 MHz –30% 47 +30% 0.8 1.0 1.2 kΩ Composite Transistors XP8081 Common characteristics chart PT — Ta ID — VDS ID — VGS 2.5 250 2.5 150 100 2.0 VGS=0V 1.5 –0.1V –0.2V 1.0 –0.3V –0.4V 0.5 50 Ta=–25˚C 1.5 75˚C 0.5 20 40 60 0 80 100 120 140 160 1 2 | Yfs | — VGS 5 3 IDSS=10mA 2 1 2.5 Forward transfer admittance |Yfs| (mS) 4 –0.8 –0.4 VDS=10V Ta=25˚C IDSS=10mA 1.5 1.0 0.5 0 Gate to source voltage VGS (V) 2 4 –0.8 –0.6 –0.4 –0.2 0 Ciss, Crss, Coss — VDS 2.0 0 –1.0 Gate to source voltage VGS (V) 0 –1.2 0 –1.2 6 | Yfs | — ID VDS=10V Ta=25˚C 0 –1.6 4 Drain to source voltage VDS (V) Ambient temperature Ta (˚C) 5 3 6 Common source short-circuit input capacitance, Common source reverse transfer capacitance, Ciss, Crss, Coss (pF) Common source short-circuit output capacitance 0 25˚C 1.0 0 0 Forward transfer admittance |Yfs| (mS) Drain current ID (mA) 2.0 200 Drain current ID (mA) Total power dissipation PT (mW) Ta=25˚C 10 VGS=0 f=1MHz Ta=25˚C 8 Ciss 6 4 2 Coss Crss 0 10 1 8 100 Drain to source voltage VDS (V) Drain current ID (mA) Characteristics charts of Tr2 IC — VCE VCE(sat) — IC 100 Collector current IC (mA) IB=1.0mA 120 0.9mA 0.8mA 0.7mA 0.6mA 100 0.5mA 0.4mA 80 0.3mA 60 0.2mA 40 20 0.1mA 0 0 2 4 6 8 10 Collector to emitter voltage VCE (V) 12 hFE — IC IC/IB=10 30 10 3 1 0.3 Ta=75˚C 25˚C 0.1 0.03 0.01 0.1 400 –25˚C VCE=10V Forward current transfer ratio hFE Ta=25˚C 140 Collector to emitter saturation voltage VCE(sat) (V) 160 350 Ta=75˚C 300 25˚C 250 –25˚C 200 150 100 50 0 0.3 1 3 10 30 Collector current IC (mA) 100 1 3 10 30 100 300 1000 Collector current IC (mA) 3 Composite Transistors XP8081 Cob — VCB 5 4 3 2 VIN — IO 100 VO=5V Ta=25˚C 3000 30 1000 10 Input voltage VIN (V) f=1MHz IE=0 Ta=25˚C 300 100 30 10 VO=0.2V Ta=25˚C 3 1 0.3 0.1 1 0.03 3 0 0.1 0.3 1 3 10 Collector to base voltage 4 IO — VIN 10000 Output current IO (µA) Collector output capacitance Cob (pF) 6 30 100 VCB (V) 1 0.4 0.6 0.8 1.0 1.2 Input voltage VIN (V) 1.4 0.01 0.1 0.3 1 3 10 30 Output current IO (mA) 100