SQP100N04-3m6 www.vishay.com Vishay Siliconix Automotive N-Channel 40 V (D-S) 175 °C MOSFET FEATURES PRODUCT SUMMARY VDS (V) • • • • • 40 RDS(on) () at VGS = 10 V 0.0036 ID (A) 100 Configuration Single Package TO-220 TrenchFET® power MOSFET Package with low thermal resistance AEC-Q101 qualified d 100 % Rg and UIS tested Material categorization: for definitions of compliance please see www.vishay.com/doc?99912 TO-220AB D G Top View G D S S N-Channel MOSFET ABSOLUTE MAXIMUM RATINGS (TC = 25 °C, unless otherwise noted) PARAMETER Drain-Source Voltage SYMBOL VDS LIMIT 40 Gate-Source Voltage VGS ± 20 Continuous Drain Current TC = 25 °C a TC = 125 °C Continuous Source Current (Diode Conduction) a Pulsed Drain Current b Single Pulse Avalanche Current Single Pulse Avalanche Energy Maximum Power Dissipation b L = 0.1 mH TC = 25 °C TC = 125 °C Operating Junction and Storage Temperature Range ID 74 100 IDM 400 IAS 60 EAS 180 TJ, Tstg V 100 IS PD UNIT 120 40 A mJ W -55 to +175 °C SYMBOL LIMIT UNIT RthJA 40 RthJC 1.25 THERMAL RESISTANCE RATINGS PARAMETER Junction-to-Ambient Junction-to-Case (Drain) PCB Mount c °C/W Notes a. Package limited. b. Pulse test; pulse width 300 μs, duty cycle 2 %. c. When mounted on 1" square PCB (FR-4 material). d. Parametric verification ongoing. S15-2651-Rev. B, 16-Nov-15 Document Number: 63547 1 For technical questions, contact: [email protected] THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000 SQP100N04-3m6 www.vishay.com Vishay Siliconix SPECIFICATIONS (TC = 25 °C, unless otherwise noted) PARAMETER SYMBOL TEST CONDITIONS MIN. TYP. MAX. VDS VGS = 0 V, ID = 250 μA 40 - - VGS(th) VDS = VGS, ID = 250 μA 2.5 3.0 3.5 VDS = 0 V, VGS = ± 20 V UNIT Static Drain-Source Breakdown Voltage Gate-Source Threshold Voltage Gate-Source Leakage Zero Gate Voltage Drain Current On-State Drain Current a Drain-Source On-State Resistance a Forward Transconductance b IGSS IDSS ID(on) RDS(on) gfs - - ± 100 VGS = 0 V VDS = 40 V - - 1 VGS = 0 V VDS = 40 V, TJ = 125 °C - - 50 VGS = 0 V VDS = 40 V, TJ = 175 °C - - 250 VGS = 10 V VDS5 V 50 - - VGS = 10 V ID = 30 A - 0.0030 0.0036 VGS = 10 V ID = 30 A, TJ = 125 °C - - 0.0060 VGS = 10 V ID = 30 A, TJ = 175 °C - - 0.0072 - 200 - - 5700 7200 VDS = 15 V, ID = 30 A V nA μA A S Dynamic b Input Capacitance Ciss Output Capacitance Coss - 600 750 Reverse Transfer Capacitance Crss - 264 330 Total Gate Charge c Qg - 90 135 Gate-Source Charge c Gate-Drain Charge c Gate Resistance Turn-On Delay Time c Rise Time c Turn-Off Delay Time c Fall Time c Qgs VGS = 0 V VGS = 10 V VDS = 25 V, f = 1 MHz VDS = 20 V, ID = 50 A - 25 - - 15 - f = 1 MHz 0.7 1.5 2.8 - 12 18 VDD = 20 V, RL = 0.4 ID 50 A, VGEN = 10 V, Rg = 1 - 10 15 - 35 53 - 9 14 - - 400 A - 0.9 1.5 V Qgd Rg td(on) tr td(off) pF tf nC ns Source-Drain Diode Ratings and Characteristics b Pulsed Current a ISM Forward Voltage VSD IF = 70 A, VGS = 0 V Notes a. Pulse test; pulse width 300 μs, duty cycle 2 %. b. Guaranteed by design, not subject to production testing. c. Independent of operating temperature. Stresses beyond those listed under “Absolute Maximum Ratings” may cause permanent damage to the device. These are stress ratings only, and functional operation of the device at these or any other conditions beyond those indicated in the operational sections of the specifications is not implied. Exposure to absolute maximum rating conditions for extended periods may affect device reliability. S15-2651-Rev. B, 16-Nov-15 Document Number: 63547 2 For technical questions, contact: [email protected] THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000 SQP100N04-3m6 www.vishay.com Vishay Siliconix TYPICAL CHARACTERISTICS (TA = 25 °C, unless otherwise noted) 100 100 V GS = 10 V thru 5 V 80 ID - Drain Current (A) ID - Drain Current (A) 80 60 40 V GS = 4 V 20 60 40 T C = 25 °C 20 T C = 125 °C T C = - 55 °C 0 0 0 3 6 9 12 0 15 2 4 6 8 VDS - Drain-to-Source Voltage (V) VGS - Gate-to-Source Voltage (V) Output Characteristics Transfer Characteristics 350 10 0.010 TC = - 55 °C TC = 25 °C 0.008 RDS(on) - On-Resistance (Ω) gfs - Transconductance (S) 280 210 TC = 125 °C 140 70 0.006 0.004 VGS = 10 V 0.002 0 0.000 0 14 28 42 56 70 ID - Drain Current (A) 0 40 60 ID - Drain Current (A) Transconductance On-Resistance vs. Drain Current 80 100 10 VGS - Gate-to-Source Voltage (V) 8000 Ciss C - Capacitance (pF) 20 6000 4000 2000 Coss ID = 50 A VDS = 20 V 8 6 4 2 Crss 0 0 0 8 16 24 32 VDS - Drain-to-Source Voltage (V) Capacitance S15-2651-Rev. B, 16-Nov-15 40 0 20 40 60 80 100 Q g - Total Gate Charge (nC) Gate Charge Document Number: 63547 3 For technical questions, contact: [email protected] THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000 SQP100N04-3m6 www.vishay.com Vishay Siliconix TYPICAL CHARACTERISTICS (TA = 25 °C, unless otherwise noted) 100 V GS = 10 V ID = 20 A 1.7 10 IS - Source Current (A) RDS(on) - On-Resistance (Normalized) 2.0 V GS = 6 V 1.4 1.1 0.8 T J = 150 °C 1 T J = 25 °C 0.1 0.01 0.5 0.001 -50 -25 0 25 50 75 100 125 150 175 0 0.2 On-Resistance vs. Junction Temperature 0.6 0.8 1.0 1.2 Source Drain Diode Forward Voltage 0.025 0.7 0.020 0.2 VGS(th) Variance (V) RDS(on) - On-Resistance (Ω) 0.4 VSD - Source-to-Drain Voltage (V) TJ - Junction Temperature (°C) 0.015 0.010 -0.3 ID = 250 μA -0.8 ID = 5 mA TJ = 150 °C -1.3 0.005 TJ = 25 °C 0.000 0 2 4 6 8 10 -1.8 -50 -25 0 25 50 75 100 125 150 175 TJ - Temperature (°C) VGS - Gate-to-Source Voltage (V) On-Resistance vs. Gate-to-Source Voltage Threshold Voltage VDS - Drain-to-Source Voltage (V) 54 ID = 10 mA 52 50 48 46 44 42 -50 -25 0 25 50 75 100 125 TJ - Junction Temperature (°C) 150 175 Drain Source Breakdown vs. Junction Temperature S15-2651-Rev. B, 16-Nov-15 Document Number: 63547 4 For technical questions, contact: [email protected] THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000 SQP100N04-3m6 www.vishay.com Vishay Siliconix THERMAL RATINGS (TA = 25 °C, unless otherwise noted) 1000 IDM Limited ID - Drain Current (A) 100 100 μs 1 ms ID Limited 10 10 ms 100 ms, 1 s,10 s, DC 1 Limited by RDS(on)* BVDSS Limited 0.1 TC = 25 °C Single Pulse 0.01 0.01 0.1 1 10 100 VDS - Drain-to-Source Voltage (V) * VGS > minimum VGS at which RDS(on) is specified Safe Operating Area Normalized Effective Transient Thermal Impedance 1 0.1 0.01 0.001 0.0001 10-4 10-3 10-2 10-1 1 10 100 1000 Square Wave Pulse Duration (s) Normalized Thermal Transient Impedance, Junction-to-Ambient S15-2651-Rev. B, 16-Nov-15 Document Number: 63547 5 For technical questions, contact: [email protected] THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000 SQP100N04-3m6 www.vishay.com Vishay Siliconix THERMAL RATINGS (TA = 25 °C, unless otherwise noted) 2 1 Normalized Effective Transient Thermal Impedance Duty Cycle = 0.5 0.2 0.1 0.1 0.05 0.02 Single Pulse 0.01 10- 5 10- 4 10- 3 10- 2 Square Wave Pulse Duration (sec) 10- 1 1 3 Normalized Thermal Transient Impedance, Junction-to-Case Note • The characteristics shown in the two graphs - Normalized Transient Thermal Impedance Junction-to-Ambient (25 °C) - Normalized Transient Thermal Impedance Junction-to-Case (25 °C) are given for general guidelines only to enable the user to get a “ball park” indication of part capabilities. The data are extracted from single pulse transient thermal impedance characteristics which are developed from empirical measurements. The latter is valid for the part mounted on printed circuit board - FR4, size 1" x 1" x 0.062", double sided with 2 oz. copper, 100 % on both sides. The part capabilities can widely vary depending on actual application parameters and operating conditions. Vishay Siliconix maintains worldwide manufacturing capability. Products may be manufactured at one of several qualified locations. Reliability data for Silicon Technology and Package Reliability represent a composite of all qualified locations. For related documents such as package/tape drawings, part marking, and reliability data, see www.vishay.com/ppg?63547. S15-2651-Rev. B, 16-Nov-15 Document Number: 63547 6 For technical questions, contact: [email protected] THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000 SQP100N04-3m6 www.vishay.com REVISION HISTORY REVISION B DATE 04-Nov-15 Vishay Siliconix a DESCRIPTION OF CHANGE • Changed capacitance, gate charge, gate resistance, and rise time Note a. As of Apr 2014 S15-2651-Rev. B, 16-Nov-15 Document Number: 63547 7 For technical questions, contact: [email protected] THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000 Ordering Information www.vishay.com Vishay Siliconix TO-220 Ordering codes for the SQ rugged series power MOSFETs in the TO-220 package: DATASHEET PART NUMBER OLD ORDERING CODE a NEW ORDERING CODE SQP100N04-3m6 - SQP100N04-3M6_GE3 SQP100P06-9m3L - SQP100P06-9M3L_GE3 SQP120N06-06 - SQP120N06-06_GE3 SQP120N06-3m5L SQP120N06-3M5L-GE3 SQP120N06-3M5L_GE3 SQP120N10-09 SQP120N10-09-GE3 SQP120N10-09_GE3 SQP120N10-3m8 SQP120N10-3M8-GE3 SQP120N10-3M8_GE3 SQP25N15-52 - SQP25N15-52_GE3 SQP50N06-09L SQP50N06-09L-GE3 SQP50N06-09L_GE3 SQP50P03-07 SQP50P03-07-GE3 SQP50P03-07_GE3 SQP60N06-15 SQP60N06-15-GE3 SQP60N06-15_GE3 SQP90P06-07L SQP90P06-07L-GE3 SQP90P06-07L_GE3 Note a. Old ordering code is obsolete and no longer valid for new orders Revision: 12-Nov-15 Document Number: 67167 1 For technical questions, contact: [email protected] THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000 Package Information www.vishay.com Vishay Siliconix TO-220AB MILLIMETERS A E F D H(1) Q ØP 3 2 L(1) 1 M* L b(1) INCHES DIM. MIN. MAX. MIN. MAX. A 4.25 4.65 0.167 0.183 b 0.69 1.01 0.027 0.040 b(1) 1.20 1.73 0.047 0.068 c 0.36 0.61 0.014 0.024 D 14.85 15.49 0.585 0.610 D2 12.19 12.70 0.480 0.500 E 10.04 10.51 0.395 0.414 e 2.41 2.67 0.095 0.105 e(1) 4.88 5.28 0.192 0.208 F 1.14 1.40 0.045 0.055 H(1) 6.09 6.48 0.240 0.255 0.115 J(1) 2.41 2.92 0.095 L 13.35 14.02 0.526 0.552 L(1) 3.32 3.82 0.131 0.150 ØP 3.54 3.94 0.139 0.155 Q 2.60 3.00 0.102 0.118 ECN: T14-0413-Rev. P, 16-Jun-14 DWG: 5471 Note * M = 1.32 mm to 1.62 mm (dimension including protrusion) Heatsink hole for HVM C b e J(1) e(1) D2 Document Number: 71195 1 For technical questions, contact: [email protected] THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000 Revison: 16-Jun-14 Legal Disclaimer Notice www.vishay.com Vishay Disclaimer ALL PRODUCT, PRODUCT SPECIFICATIONS AND DATA ARE SUBJECT TO CHANGE WITHOUT NOTICE TO IMPROVE RELIABILITY, FUNCTION OR DESIGN OR OTHERWISE. Vishay Intertechnology, Inc., its affiliates, agents, and employees, and all persons acting on its or their behalf (collectively, “Vishay”), disclaim any and all liability for any errors, inaccuracies or incompleteness contained in any datasheet or in any other disclosure relating to any product. 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