SQP25N15-52 Datasheet

SQP25N15-52
www.vishay.com
Vishay Siliconix
Automotive N-Channel 150 V (D-S) 175 °C MOSFET
FEATURES
PRODUCT SUMMARY
VDS (V)
• TrenchFET® power MOSFET
150
RDS(on) (Ω) at VGS = 10 V
• Package with low thermal resistance
0.052
ID (A)
• 100 % Rg and UIS tested
25
Configuration
• AEC-Q101 qualified d
Single
Package
• Material categorization:
for definitions of compliance please see
www.vishay.com/doc?99912
TO-220
TO-220AB
D
G
Top View
G
D
S
N-Channel MOSFET
S
ABSOLUTE MAXIMUM RATINGS (TC = 25 °C, unless otherwise noted)
PARAMETER
Drain-Source Voltage
SYMBOL
VDS
LIMIT
150
Gate-Source Voltage
VGS
± 20
Continuous Drain Current
TC = 25 °C
TC = 125 °C
Continuous Source Current (Diode Conduction) a
Pulsed Drain Current b
Single Pulse Avalanche Energy
Single Pulse Avalanche Current
Maximum Power Dissipation b
L = 0.1 mH
TC = 25 °C
TC = 125 °C
Operating Junction and Storage Temperature Range
ID
16
50
IDM
65
IAS
30
PD
V
25
IS
EAS
UNIT
45
107
35
A
mJ
W
TJ, Tstg
-55 to +175
°C
SYMBOL
LIMIT
UNIT
RthJA
50
RthJC
1.4
THERMAL RESISTANCE RATINGS
PARAMETER
Junction-to-Ambient
Junction-to-Case (Drain)
PCB Mount c
°C/W
Notes
a. Package limited.
b. Pulse test; pulse width ≤ 300 μs, duty cycle ≤ 2 %.
c. When mounted on 1" square PCB (FR4 material).
d. Parametric verification ongoing.
S15-2048-Rev. A, 31-Aug-15
Document Number: 66974
1
For technical questions, contact: [email protected]
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
SQP25N15-52
www.vishay.com
Vishay Siliconix
SPECIFICATIONS (TC = 25 °C, unless otherwise noted)
PARAMETER
SYMBOL
TEST CONDITIONS
MIN.
TYP.
MAX.
VDS
VGS = 0 V, ID = 250 μA
150
-
-
VGS(th)
VDS = VGS, ID = 250 μA
2.5
3
4
VDS = 0 V, VGS = ± 20 V
UNIT
Static
Drain-Source Breakdown Voltage
Gate-Source Threshold Voltage
Gate-Source Leakage
Zero Gate Voltage Drain Current
On-State Drain Current a
Drain-Source On-State Resistance a
Forward Transconductance b
IGSS
IDSS
ID(on)
RDS(on)
gfs
-
-
± 100
VGS = 0 V
VDS = 150 V
-
-
1
VGS = 0 V
VDS = 150 V, TJ = 125 °C
-
-
50
VGS = 0 V
VDS = 150 V, TJ = 175 °C
-
-
250
VGS = 10 V
VDS ≥ 5 V
30
-
-
VGS = 10 V
ID = 15 A
-
0.041
0.052
VGS = 10 V
ID = 15 A, TJ = 125 °C
-
-
0.106
VGS = 10 V
ID = 15 A, TJ = 175 °C
VDS = 15 V, ID = 15 A
-
-
0.138
-
33
2360
V
nA
μA
A
Ω
S
Dynamic b
Input Capacitance
Ciss
Output Capacitance
Coss
Reverse Transfer Capacitance
Crss
Total Gate Charge c
Qg
Gate-Source Charge c
Qgs
Gate-Drain
Charge c
Gate Resistance
Turn-On Delay Time c
Rise Time c
Turn-Off Delay Time c
Fall Time c
VGS = 0 V
VGS = 10 V
VDS = 25 V, f = 1 MHz
VDS = 75 V, ID = 25 A
Qgd
Rg
f = 1 MHz
td(on)
tr
td(off)
VDD = 75 V, RL = 3 Ω
ID ≅ 25 A, VGEN = 10 V, Rg = 1 Ω
tf
-
1886
-
215
270
-
97
125
-
37.9
60
-
8.5
-
-
12.2
-
0.35
1.0
3.2
-
11
17
pF
nC
Ω
-
21
33
-
20
30
-
12
20
-
-
65
A
-
0.85
1.5
V
ns
Source-Drain Diode Ratings and Characteristics b
Pulsed Current a
ISM
Forward Voltage
VSD
IF = 20 A, VGS = 0 V
Notes
a. Pulse test; pulse width ≤ 300 μs, duty cycle ≤ 2 %.
b. Guaranteed by design, not subject to production testing.
c. Independent of operating temperature.
Stresses beyond those listed under “Absolute Maximum Ratings” may cause permanent damage to the device. These are stress ratings only, and functional operation
of the device at these or any other conditions beyond those indicated in the operational sections of the specifications is not implied. Exposure to absolute maximum
rating conditions for extended periods may affect device reliability.
S15-2048-Rev. A, 31-Aug-15
Document Number: 66974
2
For technical questions, contact: [email protected]
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
SQP25N15-52
www.vishay.com
Vishay Siliconix
TYPICAL CHARACTERISTICS (TA = 25 °C, unless otherwise noted)
50
50
VGS = 10 V thru 7 V
ID - Drain Current (A)
40
40
ID - Drain Current (A)
VGS = 6 V
30
20
10
30
TC = 25 °C
20
10
VGS = 5 V
TC = 125 °C
0
TC = - 55 °C
0
0
2
4
6
8
10
VDS - Drain-to-Source Voltage (V)
0
2
4
6
8
VGS - Gate-to-Source Voltage (V)
Output Characteristics
Transfer Characteristics
10
60
8
48
10
gfs - Transconductance (S)
ID - Drain Current (A)
TC = - 55 °C
6
TC = 25 °C
4
2
TC = 25 °C
36
TC = 125 °C
24
12
TC = - 55 °C
TC = 125 °C
0
0
0
2
4
6
8
VGS - Gate-to-Source Voltage (V)
0
10
5
10
15
ID - Drain Current (A)
25
60
75
Transconductance
Transfer Characteristics
3000
0.15
2500
C - Capacitance (pF)
0.12
RDS(on) - On-Resistance (Ω)
20
0.09
0.06
Ciss
2000
1500
1000
VGS = 10 V
Coss
0.03
500
Crss
0
0.00
0
10
20
30
40
50
0
15
30
45
ID - Drain Current (A)
VDS - Drain-to-Source Voltage (V)
On-Resistance vs. Drain Current
Capacitance
S15-2048-Rev. A, 31-Aug-15
Document Number: 66974
3
For technical questions, contact: [email protected]
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
SQP25N15-52
www.vishay.com
Vishay Siliconix
TYPICAL CHARACTERISTICS (TA = 25 °C, unless otherwise noted)
3.0
RDS(on) - On-Resistance (Normalized)
VGS - Gate-to-Source Voltage (V)
10
ID = 25 A
VDS = 75 V
8
6
4
2
0
0
8
16
24
32
ID = 15 A
2.5
2.0
VGS = 10 V
1.5
1.0
0.5
- 50 - 25
40
0
100
0.25
10
0.20
RDS(on) - On-Resistance (Ω)
IS - Source Current (A)
50
75
100
125
150
175
On-Resistance vs. Junction Temperature
Gate Charge
TJ = 150 °C
1
0.1
25
TJ - Junction Temperature (°C)
Qg - Total Gate Charge (nC)
TJ = 25 °C
0.01
0.15
TJ = 150 °C
0.10
0.05
TJ = 25 °C
0.001
0.00
0.0
0.2
0.4
0.6
0.8
1.0
VSD - Source-to-Drain Voltage (V)
1.2
0
6
8
10
On-Resistance vs. Gate-to-Source Voltage
1.0
VDS - Drain-to-Source Voltage (V)
200
0.4
VGS(th) Variance (V)
4
VGS - Gate-to-Source Voltage (V)
Source Drain Diode Forward Voltage
- 0.2
ID = 5 mA
- 0.8
ID = 250 μA
- 1.4
- 2.0
- 50 - 25
2
0
25
50
75
100
TJ - Temperature (°C)
Threshold Voltage
S15-2048-Rev. A, 31-Aug-15
125
150
175
ID = 10 mA
190
180
170
160
150
- 50 - 25
0
25
50
75 100 125
TJ - Junction Temperature (°C)
150
175
Drain Source Breakdown vs. Junction Temperature
Document Number: 66974
4
For technical questions, contact: [email protected]
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
SQP25N15-52
www.vishay.com
Vishay Siliconix
THERMAL RATINGS (TA = 25 °C, unless otherwise noted)
1000
IDM Limited
ID - Drain Current (A)
100
10
100 μs
Limited by RDS(on)*
1 ms
10 ms
100 ms, 1 s, 10 s, DC
1
0.1
0.01
0.01
BVDSS Limited
TC = 25 °C
Single Pulse
0.1
1
10
100
1000
VDS - Drain-to-Source Voltage (V)
* VGS > minimum VGS at which RDS(on) is specified
Safe Operating Area
2
Normalized Effective Transient
Thermal Impedance
1
Duty Cycle = 0.5
0.2
0.1
0.1
0.05
0.02
Single Pulse
0.01
10-4
10-3
10-2
10-1
1
10
100
1000
Square Wave Pulse Duration (s)
Normalized Thermal Transient Impedance, Junction-to-Ambient
S15-2048-Rev. A, 31-Aug-15
Document Number: 66974
5
For technical questions, contact: [email protected]
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
SQP25N15-52
www.vishay.com
Vishay Siliconix
THERMAL RATINGS (TA = 25 °C, unless otherwise noted)
2
1
Normalized Effective Transient
Thermal Impedance
Duty Cycle = 0.5
0.2
0.1
0.1
0.05
0.02
Single Pulse
0.01
10 -4
10 -3
10 -2
10 -1
1
Square Wave Pulse Duration (s)
Normalized Thermal Transient Impedance, Junction-to-Case
Note
• The characteristics shown in the two graphs
- Normalized Transient Thermal Impedance Junction to Ambient (25 °C)
- Normalized Transient Thermal Impedance Junction to Case (25 °C)
are given for general guidelines only to enable the user to get a “ball park” indication of part capabilities. The data are extracted from single
pulse transient thermal impedance characteristics which are developed from empirical measurements. The latter is valid for the part
mounted on printed circuit board - FR4, size 1" x 1" x 0.062", double sided with 2 oz. copper, 100 % on both sides. The part capabilities
can widely vary depending on actual application parameters and operating conditions.
Vishay Siliconix maintains worldwide manufacturing capability. Products may be manufactured at one of several qualified locations. Reliability data for Silicon
Technology and Package Reliability represent a composite of all qualified locations. For related documents such as package/tape drawings, part marking, and
reliability data, see www.vishay.com/ppg?66974.
S15-2048-Rev. A, 31-Aug-15
Document Number: 66974
6
For technical questions, contact: [email protected]
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
Ordering Information
www.vishay.com
Vishay Siliconix
TO-220
Ordering codes for the SQ rugged series power MOSFETs in the TO-220 package:
DATASHEET PART NUMBER
OLD ORDERING CODE a
NEW ORDERING CODE
SQP100N04-3m6
-
SQP100N04-3M6_GE3
SQP100P06-9m3L
-
SQP100P06-9M3L_GE3
SQP120N06-06
-
SQP120N06-06_GE3
SQP120N06-3m5L
SQP120N06-3M5L-GE3
SQP120N06-3M5L_GE3
SQP120N10-09
SQP120N10-09-GE3
SQP120N10-09_GE3
SQP120N10-3m8
SQP120N10-3M8-GE3
SQP120N10-3M8_GE3
SQP25N15-52
-
SQP25N15-52_GE3
SQP50N06-09L
SQP50N06-09L-GE3
SQP50N06-09L_GE3
SQP50P03-07
SQP50P03-07-GE3
SQP50P03-07_GE3
SQP60N06-15
SQP60N06-15-GE3
SQP60N06-15_GE3
SQP90P06-07L
SQP90P06-07L-GE3
SQP90P06-07L_GE3
Note
a. Old ordering code is obsolete and no longer valid for new orders
Revision: 12-Nov-15
Document Number: 67167
1
For technical questions, contact: [email protected]
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
Package Information
www.vishay.com
Vishay Siliconix
TO-220AB
MILLIMETERS
A
E
F
D
H(1)
Q
ØP
3
2
L(1)
1
M*
L
b(1)
INCHES
DIM.
MIN.
MAX.
MIN.
MAX.
A
4.25
4.65
0.167
0.183
b
0.69
1.01
0.027
0.040
b(1)
1.20
1.73
0.047
0.068
c
0.36
0.61
0.014
0.024
D
14.85
15.49
0.585
0.610
D2
12.19
12.70
0.480
0.500
E
10.04
10.51
0.395
0.414
e
2.41
2.67
0.095
0.105
e(1)
4.88
5.28
0.192
0.208
F
1.14
1.40
0.045
0.055
H(1)
6.09
6.48
0.240
0.255
0.115
J(1)
2.41
2.92
0.095
L
13.35
14.02
0.526
0.552
L(1)
3.32
3.82
0.131
0.150
ØP
3.54
3.94
0.139
0.155
Q
2.60
3.00
0.102
0.118
ECN: T14-0413-Rev. P, 16-Jun-14
DWG: 5471
Note
* M = 1.32 mm to 1.62 mm (dimension including protrusion)
Heatsink hole for HVM
C
b
e
J(1)
e(1)
D2
Document Number: 71195
1
For technical questions, contact: [email protected]
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
Revison: 16-Jun-14
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Revision: 02-Oct-12
1
Document Number: 91000