SQP25N15-52 www.vishay.com Vishay Siliconix Automotive N-Channel 150 V (D-S) 175 °C MOSFET FEATURES PRODUCT SUMMARY VDS (V) • TrenchFET® power MOSFET 150 RDS(on) (Ω) at VGS = 10 V • Package with low thermal resistance 0.052 ID (A) • 100 % Rg and UIS tested 25 Configuration • AEC-Q101 qualified d Single Package • Material categorization: for definitions of compliance please see www.vishay.com/doc?99912 TO-220 TO-220AB D G Top View G D S N-Channel MOSFET S ABSOLUTE MAXIMUM RATINGS (TC = 25 °C, unless otherwise noted) PARAMETER Drain-Source Voltage SYMBOL VDS LIMIT 150 Gate-Source Voltage VGS ± 20 Continuous Drain Current TC = 25 °C TC = 125 °C Continuous Source Current (Diode Conduction) a Pulsed Drain Current b Single Pulse Avalanche Energy Single Pulse Avalanche Current Maximum Power Dissipation b L = 0.1 mH TC = 25 °C TC = 125 °C Operating Junction and Storage Temperature Range ID 16 50 IDM 65 IAS 30 PD V 25 IS EAS UNIT 45 107 35 A mJ W TJ, Tstg -55 to +175 °C SYMBOL LIMIT UNIT RthJA 50 RthJC 1.4 THERMAL RESISTANCE RATINGS PARAMETER Junction-to-Ambient Junction-to-Case (Drain) PCB Mount c °C/W Notes a. Package limited. b. Pulse test; pulse width ≤ 300 μs, duty cycle ≤ 2 %. c. When mounted on 1" square PCB (FR4 material). d. Parametric verification ongoing. S15-2048-Rev. A, 31-Aug-15 Document Number: 66974 1 For technical questions, contact: [email protected] THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000 SQP25N15-52 www.vishay.com Vishay Siliconix SPECIFICATIONS (TC = 25 °C, unless otherwise noted) PARAMETER SYMBOL TEST CONDITIONS MIN. TYP. MAX. VDS VGS = 0 V, ID = 250 μA 150 - - VGS(th) VDS = VGS, ID = 250 μA 2.5 3 4 VDS = 0 V, VGS = ± 20 V UNIT Static Drain-Source Breakdown Voltage Gate-Source Threshold Voltage Gate-Source Leakage Zero Gate Voltage Drain Current On-State Drain Current a Drain-Source On-State Resistance a Forward Transconductance b IGSS IDSS ID(on) RDS(on) gfs - - ± 100 VGS = 0 V VDS = 150 V - - 1 VGS = 0 V VDS = 150 V, TJ = 125 °C - - 50 VGS = 0 V VDS = 150 V, TJ = 175 °C - - 250 VGS = 10 V VDS ≥ 5 V 30 - - VGS = 10 V ID = 15 A - 0.041 0.052 VGS = 10 V ID = 15 A, TJ = 125 °C - - 0.106 VGS = 10 V ID = 15 A, TJ = 175 °C VDS = 15 V, ID = 15 A - - 0.138 - 33 2360 V nA μA A Ω S Dynamic b Input Capacitance Ciss Output Capacitance Coss Reverse Transfer Capacitance Crss Total Gate Charge c Qg Gate-Source Charge c Qgs Gate-Drain Charge c Gate Resistance Turn-On Delay Time c Rise Time c Turn-Off Delay Time c Fall Time c VGS = 0 V VGS = 10 V VDS = 25 V, f = 1 MHz VDS = 75 V, ID = 25 A Qgd Rg f = 1 MHz td(on) tr td(off) VDD = 75 V, RL = 3 Ω ID ≅ 25 A, VGEN = 10 V, Rg = 1 Ω tf - 1886 - 215 270 - 97 125 - 37.9 60 - 8.5 - - 12.2 - 0.35 1.0 3.2 - 11 17 pF nC Ω - 21 33 - 20 30 - 12 20 - - 65 A - 0.85 1.5 V ns Source-Drain Diode Ratings and Characteristics b Pulsed Current a ISM Forward Voltage VSD IF = 20 A, VGS = 0 V Notes a. Pulse test; pulse width ≤ 300 μs, duty cycle ≤ 2 %. b. Guaranteed by design, not subject to production testing. c. Independent of operating temperature. Stresses beyond those listed under “Absolute Maximum Ratings” may cause permanent damage to the device. These are stress ratings only, and functional operation of the device at these or any other conditions beyond those indicated in the operational sections of the specifications is not implied. Exposure to absolute maximum rating conditions for extended periods may affect device reliability. S15-2048-Rev. A, 31-Aug-15 Document Number: 66974 2 For technical questions, contact: [email protected] THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000 SQP25N15-52 www.vishay.com Vishay Siliconix TYPICAL CHARACTERISTICS (TA = 25 °C, unless otherwise noted) 50 50 VGS = 10 V thru 7 V ID - Drain Current (A) 40 40 ID - Drain Current (A) VGS = 6 V 30 20 10 30 TC = 25 °C 20 10 VGS = 5 V TC = 125 °C 0 TC = - 55 °C 0 0 2 4 6 8 10 VDS - Drain-to-Source Voltage (V) 0 2 4 6 8 VGS - Gate-to-Source Voltage (V) Output Characteristics Transfer Characteristics 10 60 8 48 10 gfs - Transconductance (S) ID - Drain Current (A) TC = - 55 °C 6 TC = 25 °C 4 2 TC = 25 °C 36 TC = 125 °C 24 12 TC = - 55 °C TC = 125 °C 0 0 0 2 4 6 8 VGS - Gate-to-Source Voltage (V) 0 10 5 10 15 ID - Drain Current (A) 25 60 75 Transconductance Transfer Characteristics 3000 0.15 2500 C - Capacitance (pF) 0.12 RDS(on) - On-Resistance (Ω) 20 0.09 0.06 Ciss 2000 1500 1000 VGS = 10 V Coss 0.03 500 Crss 0 0.00 0 10 20 30 40 50 0 15 30 45 ID - Drain Current (A) VDS - Drain-to-Source Voltage (V) On-Resistance vs. Drain Current Capacitance S15-2048-Rev. A, 31-Aug-15 Document Number: 66974 3 For technical questions, contact: [email protected] THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000 SQP25N15-52 www.vishay.com Vishay Siliconix TYPICAL CHARACTERISTICS (TA = 25 °C, unless otherwise noted) 3.0 RDS(on) - On-Resistance (Normalized) VGS - Gate-to-Source Voltage (V) 10 ID = 25 A VDS = 75 V 8 6 4 2 0 0 8 16 24 32 ID = 15 A 2.5 2.0 VGS = 10 V 1.5 1.0 0.5 - 50 - 25 40 0 100 0.25 10 0.20 RDS(on) - On-Resistance (Ω) IS - Source Current (A) 50 75 100 125 150 175 On-Resistance vs. Junction Temperature Gate Charge TJ = 150 °C 1 0.1 25 TJ - Junction Temperature (°C) Qg - Total Gate Charge (nC) TJ = 25 °C 0.01 0.15 TJ = 150 °C 0.10 0.05 TJ = 25 °C 0.001 0.00 0.0 0.2 0.4 0.6 0.8 1.0 VSD - Source-to-Drain Voltage (V) 1.2 0 6 8 10 On-Resistance vs. Gate-to-Source Voltage 1.0 VDS - Drain-to-Source Voltage (V) 200 0.4 VGS(th) Variance (V) 4 VGS - Gate-to-Source Voltage (V) Source Drain Diode Forward Voltage - 0.2 ID = 5 mA - 0.8 ID = 250 μA - 1.4 - 2.0 - 50 - 25 2 0 25 50 75 100 TJ - Temperature (°C) Threshold Voltage S15-2048-Rev. A, 31-Aug-15 125 150 175 ID = 10 mA 190 180 170 160 150 - 50 - 25 0 25 50 75 100 125 TJ - Junction Temperature (°C) 150 175 Drain Source Breakdown vs. Junction Temperature Document Number: 66974 4 For technical questions, contact: [email protected] THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000 SQP25N15-52 www.vishay.com Vishay Siliconix THERMAL RATINGS (TA = 25 °C, unless otherwise noted) 1000 IDM Limited ID - Drain Current (A) 100 10 100 μs Limited by RDS(on)* 1 ms 10 ms 100 ms, 1 s, 10 s, DC 1 0.1 0.01 0.01 BVDSS Limited TC = 25 °C Single Pulse 0.1 1 10 100 1000 VDS - Drain-to-Source Voltage (V) * VGS > minimum VGS at which RDS(on) is specified Safe Operating Area 2 Normalized Effective Transient Thermal Impedance 1 Duty Cycle = 0.5 0.2 0.1 0.1 0.05 0.02 Single Pulse 0.01 10-4 10-3 10-2 10-1 1 10 100 1000 Square Wave Pulse Duration (s) Normalized Thermal Transient Impedance, Junction-to-Ambient S15-2048-Rev. A, 31-Aug-15 Document Number: 66974 5 For technical questions, contact: [email protected] THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000 SQP25N15-52 www.vishay.com Vishay Siliconix THERMAL RATINGS (TA = 25 °C, unless otherwise noted) 2 1 Normalized Effective Transient Thermal Impedance Duty Cycle = 0.5 0.2 0.1 0.1 0.05 0.02 Single Pulse 0.01 10 -4 10 -3 10 -2 10 -1 1 Square Wave Pulse Duration (s) Normalized Thermal Transient Impedance, Junction-to-Case Note • The characteristics shown in the two graphs - Normalized Transient Thermal Impedance Junction to Ambient (25 °C) - Normalized Transient Thermal Impedance Junction to Case (25 °C) are given for general guidelines only to enable the user to get a “ball park” indication of part capabilities. The data are extracted from single pulse transient thermal impedance characteristics which are developed from empirical measurements. The latter is valid for the part mounted on printed circuit board - FR4, size 1" x 1" x 0.062", double sided with 2 oz. copper, 100 % on both sides. The part capabilities can widely vary depending on actual application parameters and operating conditions. Vishay Siliconix maintains worldwide manufacturing capability. Products may be manufactured at one of several qualified locations. Reliability data for Silicon Technology and Package Reliability represent a composite of all qualified locations. For related documents such as package/tape drawings, part marking, and reliability data, see www.vishay.com/ppg?66974. S15-2048-Rev. A, 31-Aug-15 Document Number: 66974 6 For technical questions, contact: [email protected] THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000 Ordering Information www.vishay.com Vishay Siliconix TO-220 Ordering codes for the SQ rugged series power MOSFETs in the TO-220 package: DATASHEET PART NUMBER OLD ORDERING CODE a NEW ORDERING CODE SQP100N04-3m6 - SQP100N04-3M6_GE3 SQP100P06-9m3L - SQP100P06-9M3L_GE3 SQP120N06-06 - SQP120N06-06_GE3 SQP120N06-3m5L SQP120N06-3M5L-GE3 SQP120N06-3M5L_GE3 SQP120N10-09 SQP120N10-09-GE3 SQP120N10-09_GE3 SQP120N10-3m8 SQP120N10-3M8-GE3 SQP120N10-3M8_GE3 SQP25N15-52 - SQP25N15-52_GE3 SQP50N06-09L SQP50N06-09L-GE3 SQP50N06-09L_GE3 SQP50P03-07 SQP50P03-07-GE3 SQP50P03-07_GE3 SQP60N06-15 SQP60N06-15-GE3 SQP60N06-15_GE3 SQP90P06-07L SQP90P06-07L-GE3 SQP90P06-07L_GE3 Note a. Old ordering code is obsolete and no longer valid for new orders Revision: 12-Nov-15 Document Number: 67167 1 For technical questions, contact: [email protected] THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000 Package Information www.vishay.com Vishay Siliconix TO-220AB MILLIMETERS A E F D H(1) Q ØP 3 2 L(1) 1 M* L b(1) INCHES DIM. MIN. MAX. MIN. MAX. A 4.25 4.65 0.167 0.183 b 0.69 1.01 0.027 0.040 b(1) 1.20 1.73 0.047 0.068 c 0.36 0.61 0.014 0.024 D 14.85 15.49 0.585 0.610 D2 12.19 12.70 0.480 0.500 E 10.04 10.51 0.395 0.414 e 2.41 2.67 0.095 0.105 e(1) 4.88 5.28 0.192 0.208 F 1.14 1.40 0.045 0.055 H(1) 6.09 6.48 0.240 0.255 0.115 J(1) 2.41 2.92 0.095 L 13.35 14.02 0.526 0.552 L(1) 3.32 3.82 0.131 0.150 ØP 3.54 3.94 0.139 0.155 Q 2.60 3.00 0.102 0.118 ECN: T14-0413-Rev. P, 16-Jun-14 DWG: 5471 Note * M = 1.32 mm to 1.62 mm (dimension including protrusion) Heatsink hole for HVM C b e J(1) e(1) D2 Document Number: 71195 1 For technical questions, contact: [email protected] THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000 Revison: 16-Jun-14 Legal Disclaimer Notice www.vishay.com Vishay Disclaimer ALL PRODUCT, PRODUCT SPECIFICATIONS AND DATA ARE SUBJECT TO CHANGE WITHOUT NOTICE TO IMPROVE RELIABILITY, FUNCTION OR DESIGN OR OTHERWISE. Vishay Intertechnology, Inc., its affiliates, agents, and employees, and all persons acting on its or their behalf (collectively, “Vishay”), disclaim any and all liability for any errors, inaccuracies or incompleteness contained in any datasheet or in any other disclosure relating to any product. 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