SQP120N10-09 www.vishay.com Vishay Siliconix Automotive N-Channel 100 V (D-S) 175 °C MOSFET FEATURES PRODUCT SUMMARY VDS (V) • TrenchFET® power MOSFET 100 RDS(on) (Ω) at VGS = 10 V • Package with low thermal resistance 0.0095 ID (A) • AEC-Q101 qualified d 120 Configuration • 100 % Rg and UIS tested Single Package • Material categorization: for definitions of compliance please see www.vishay.com/doc?99912 TO-220 TO-220AB D G Top View G D S N-Channel MOSFET S ABSOLUTE MAXIMUM RATINGS (TC = 25 °C, unless otherwise noted) PARAMETER SYMBOL LIMIT Drain-Source Voltage VDS 100 Gate-Source Voltage VGS ± 20 Continuous Drain Current TC = 25 °C a TC = 125 °C Continuous Source Current (Diode Conduction) a Pulsed Drain Current b Single Pulse Avalanche Current Single Pulse Avalanche Energy Maximum Power Dissipation b L = 0.1 mH TC = 25 °C TC = 125 °C Operating Junction and Storage Temperature Range ID V 120 73 IS 120 IDM 480 IAS 73 EAS 266 PD UNIT 375 125 A mJ W TJ, Tstg -55 to +175 °C SYMBOL LIMIT UNIT RthJA 40 RthJC 0.4 THERMAL RESISTANCE RATINGS PARAMETER Junction-to-Ambient Junction-to-Case (Drain) PCB Mount c °C/W Notes a. Package limited. b. Pulse test; pulse width ≤ 300 μs, duty cycle ≤ 2 %. c. When mounted on 1" square PCB (FR4 material). d. Parametric verification ongoing. S15-1874-Rev. B, 10-Aug-15 Document Number: 62663 1 For technical questions, contact: [email protected] THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000 SQP120N10-09 www.vishay.com Vishay Siliconix SPECIFICATIONS (TC = 25 °C, unless otherwise noted) PARAMETER SYMBOL TEST CONDITIONS MIN. TYP. MAX. VDS VGS = 0, ID = 250 μA 100 - - VGS(th) VDS = VGS, ID = 250 μA 2.5 3.0 3.5 Gate-Source Leakage IGSS VDS = 0 V, VGS = ± 20 V - - ± 100 Zero Gate Voltage Drain Current IDSS UNIT Static Drain-Source Breakdown Voltage Gate-Source Threshold Voltage On-State Drain Current a Forward Transconductance Dynamic b nA VGS = 0 V VDS = 100 V - - 1 VGS = 0 V VDS = 100 V, TJ = 125 °C - - 50 VGS = 0 V VDS = 100 V, TJ = 175 °C - - 150 VGS = 10 V VDS ≥ 5 V 120 - - VGS = 10 V ID = 30 A - 0.0079 0.0095 VGS = 10 V ID = 30 A, TJ = 125 °C - - 0.0190 VGS = 10 V ID = 30 A, TJ = 175 °C - - 0.0250 - 99 - - 6915 8645 - 635 795 - 280 350 - 120 180 - 30 - - 28.5 - f = 1 MHz 0.25 0.7 2.3 td(on) - 21 32 tr VDD = 50 V, RL = 0.6 Ω ID ≅ 85 A, VGEN = 10 V, Rg = 2.5 Ω - 24 36 - 52 78 - 16 24 - - 480 A - 0.9 1.5 V ID(on) Drain-Source On-State Resistance a V RDS(on) gfs VDS = 15 V, ID = 30 A μA A Ω S b Input Capacitance Ciss Output Capacitance Coss Reverse Transfer Capacitance Crss Total Gate Charge c VDS = 25 V, f = 1 MHz Qg Gate-Source Charge c Qgs Gate-Drain Charge c Qgd Gate Resistance Turn-On Delay Time VGS = 0 V Rg c Rise Time c Turn-Off Delay Time c Fall Time c td(off) VGS = 10 V VDS = 50 V, ID = 85 A tf Source-Drain Diode Ratings and Characteristics pF nC Ω ns b Pulsed Current a ISM Forward Voltage VSD IF = 85 A, VGS = 0 Notes a. Pulse test; pulse width ≤ 300 μs, duty cycle ≤ 2 %. b. Guaranteed by design, not subject to production testing. c. Independent of operating temperature. Stresses beyond those listed under “Absolute Maximum Ratings” may cause permanent damage to the device. These are stress ratings only, and functional operation of the device at these or any other conditions beyond those indicated in the operational sections of the specifications is not implied. Exposure to absolute maximum rating conditions for extended periods may affect device reliability. S15-1874-Rev. B, 10-Aug-15 Document Number: 62663 2 For technical questions, contact: [email protected] THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000 SQP120N10-09 www.vishay.com Vishay Siliconix TYPICAL CHARACTERISTICS (TA = 25 °C, unless otherwise noted) 175 120 V GS = 10 V thru 6 V 100 125 ID - Drain Current (A) ID - Drain Current (A) 150 100 V GS = 5 V 75 50 80 60 40 T C = 25 °C 20 25 T C = 125 °C V GS = 4 V 0 T C = -55 °C 0 0 4 8 12 16 20 0 VDS - Drain-to-Source Voltage (V) 2 4 6 8 VGS - Gate-to-Source Voltage (V) Transfer Characteristics 200 0.020 160 0.016 120 RDS(on) - On-Resistance (Ω) g fs - Transconductance (S) Output Characteristics 10 T C = 25 °C T C = -55 °C 80 T C = 125 °C 0.012 VGS = 10 V 0.008 0.004 40 0.000 0 0 14 28 42 56 0 70 24 48 72 96 120 ID - Drain Current (A) ID - Drain Current (A) Transconductance On-Resistance vs. Drain Current 10 10 000 VGS - Gate-to-Source Voltage (V) ID = 85 A C - Capacitance (pF) 8000 Ciss 6000 4000 Coss 2000 8 V DS = 50 V 6 4 2 Crss 0 0 0 20 40 60 80 VDS - Drain-to-Source Voltage (V) Capacitance S15-1874-Rev. B, 10-Aug-15 100 0 20 40 60 80 100 120 Qg - Total Gate Charge (nC) Gate Charge Document Number: 62663 3 For technical questions, contact: [email protected] THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000 SQP120N10-09 www.vishay.com Vishay Siliconix TYPICAL CHARACTERISTICS (TA = 25 °C, unless otherwise noted) 100 ID = 30 A 2.1 10 V GS = 10 V IS - Source Current (A) RDS(on) - On-Resistance (Normalized) 2.5 1.7 1.3 0.9 T J = 150 °C 1 T J = 25 °C 0.1 0.01 0.5 -50 0.001 -25 0 25 50 75 100 125 150 175 0 0.2 0.4 0.6 0.8 1.0 1.2 VSD - Source-to-Drain Voltage (V) TJ - Junction Temperature (°C) On-Resistance vs. Junction Temperature Source Drain Diode Forward Voltage 0.6 0.05 VGS(th) Variance (V) RDS(on) - On-Resistance (Ω) 0.2 0.04 0.03 T J = 150 °C 0.02 2 4 6 8 VGS - Gate-to-Source Voltage (V) ID = 5 mA -1.0 -1.4 0 0 -0.6 ID = 250 μA T J = 25 °C 0.01 -0.2 10 -1.8 -50 -25 0 25 50 75 100 125 150 175 TJ - Temperature (°C) On-Resistance vs. Gate-to-Source Voltage Threshold Voltage 130 VDS - Drain-to-Source Voltage (V) ID = 10 mA 124 118 112 106 100 -50 -25 0 25 50 75 100 125 TJ - Junction Temperature (°C) 150 175 Drain Source Breakdown vs. Junction Temperature S15-1874-Rev. B, 10-Aug-15 Document Number: 62663 4 For technical questions, contact: [email protected] THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000 SQP120N10-09 www.vishay.com Vishay Siliconix THERMAL RATINGS (TA = 25 °C, unless otherwise noted) 1000 IDM Limited Limited by RDS(on)* I D - Drain Current (A) 100 100 µs 1 ms 10 10 ms 100 ms, 1 s, 10 s, DC 1 TC = 25 °C Single Pulse 0.1 BVDSS Limited 0.01 0.01 * VGS 0.1 1 10 100 VDS - Drain-to-Source Voltage (V) minimum VGS at which R DS(on) is specified Safe Operating Area Normalized Effective Transient Thermal Impedance 1 0.1 0.01 0.001 0.0001 10-4 10-3 10-2 10-1 1 10 100 1000 Square Wave Pulse Duration (s) Normalized Thermal Transient Impedance, Junction-to-Ambient S15-1874-Rev. B, 10-Aug-15 Document Number: 62663 5 For technical questions, contact: [email protected] THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000 SQP120N10-09 www.vishay.com Vishay Siliconix THERMAL RATINGS (TA = 25 °C, unless otherwise noted) 2 1 Normalized Effective Transient Thermal Impedance Duty Cycle = 0.5 0.2 0.1 0.1 0.05 0.02 Single Pulse 0.01 10-4 10-3 10-2 10-1 1 10 30 Square Wave Pulse Duration (s) Normalized Thermal Transient Impedance, Junction-to-Case Note • The characteristics shown in the two graphs - Normalized Transient Thermal Impedance Junction to Ambient (25 °C) - Normalized Transient Thermal Impedance Junction to Case (25 °C) are given for general guidelines only to enable the user to get a “ball park” indication of part capabilities. The data are extracted from single pulse transient thermal impedance characteristics which are developed from empirical measurements. The latter is valid for the part mounted on printed circuit board - FR4, size 1" x 1" x 0.062", double sided with 2 oz. copper, 100 % on both sides. The part capabilities can widely vary depending on actual application parameters and operating conditions. Vishay Siliconix maintains worldwide manufacturing capability. Products may be manufactured at one of several qualified locations. Reliability data for Silicon Technology and Package Reliability represent a composite of all qualified locations. For related documents such as package/tape drawings, part marking, and reliability data, see www.vishay.com/ppg?62663. S15-1874-Rev. B, 10-Aug-15 Document Number: 62663 6 For technical questions, contact: [email protected] THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000 SQP120N10-09 www.vishay.com REVISION HISTORY REVISION B a DATE 04-Aug-15 Vishay Siliconix DESCRIPTION OF CHANGE • Revised Rg minimum limit Note a. As of April 2014 S15-1874-Rev. B, 10-Aug-15 Document Number: 62663 7 For technical questions, contact: [email protected] THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000 Ordering Information www.vishay.com Vishay Siliconix TO-220 Ordering codes for the SQ rugged series power MOSFETs in the TO-220 package: DATASHEET PART NUMBER OLD ORDERING CODE a NEW ORDERING CODE SQP100N04-3m6 - SQP100N04-3M6_GE3 SQP100P06-9m3L - SQP100P06-9M3L_GE3 SQP120N06-06 - SQP120N06-06_GE3 SQP120N06-3m5L SQP120N06-3M5L-GE3 SQP120N06-3M5L_GE3 SQP120N10-09 SQP120N10-09-GE3 SQP120N10-09_GE3 SQP120N10-3m8 SQP120N10-3M8-GE3 SQP120N10-3M8_GE3 SQP25N15-52 - SQP25N15-52_GE3 SQP50N06-09L SQP50N06-09L-GE3 SQP50N06-09L_GE3 SQP50P03-07 SQP50P03-07-GE3 SQP50P03-07_GE3 SQP60N06-15 SQP60N06-15-GE3 SQP60N06-15_GE3 SQP90P06-07L SQP90P06-07L-GE3 SQP90P06-07L_GE3 Note a. Old ordering code is obsolete and no longer valid for new orders Revision: 12-Nov-15 Document Number: 67167 1 For technical questions, contact: [email protected] THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000 Package Information www.vishay.com Vishay Siliconix TO-220AB MILLIMETERS A E F D H(1) Q ØP 3 2 L(1) 1 M* L b(1) INCHES DIM. MIN. MAX. MIN. MAX. A 4.25 4.65 0.167 0.183 b 0.69 1.01 0.027 0.040 b(1) 1.20 1.73 0.047 0.068 c 0.36 0.61 0.014 0.024 D 14.85 15.49 0.585 0.610 D2 12.19 12.70 0.480 0.500 E 10.04 10.51 0.395 0.414 e 2.41 2.67 0.095 0.105 e(1) 4.88 5.28 0.192 0.208 F 1.14 1.40 0.045 0.055 H(1) 6.09 6.48 0.240 0.255 0.115 J(1) 2.41 2.92 0.095 L 13.35 14.02 0.526 0.552 L(1) 3.32 3.82 0.131 0.150 ØP 3.54 3.94 0.139 0.155 Q 2.60 3.00 0.102 0.118 ECN: T14-0413-Rev. P, 16-Jun-14 DWG: 5471 Note * M = 1.32 mm to 1.62 mm (dimension including protrusion) Heatsink hole for HVM C b e J(1) e(1) D2 Document Number: 71195 1 For technical questions, contact: [email protected] THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000 Revison: 16-Jun-14 Legal Disclaimer Notice www.vishay.com Vishay Disclaimer ALL PRODUCT, PRODUCT SPECIFICATIONS AND DATA ARE SUBJECT TO CHANGE WITHOUT NOTICE TO IMPROVE RELIABILITY, FUNCTION OR DESIGN OR OTHERWISE. Vishay Intertechnology, Inc., its affiliates, agents, and employees, and all persons acting on its or their behalf (collectively, “Vishay”), disclaim any and all liability for any errors, inaccuracies or incompleteness contained in any datasheet or in any other disclosure relating to any product. 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