SQP90P06-07L www.vishay.com Vishay Siliconix Automotive P-Channel 60 V (D-S) 175 °C MOSFET FEATURES PRODUCT SUMMARY VDS (V) • TrenchFET® power MOSFET -60 RDS(on) (Ω) at VGS = -10 V 0.0067 RDS(on) (Ω) at VGS = -4.5 V 0.0088 ID (A) • Package with low thermal resistance • AEC-Q101 qualified d • 100 % Rg and UIS tested -120 Configuration • Material categorization: For definitions of compliance please see www.vishay.com/doc?99912 Single TO-220AB S G Top View G D S D P-Channel MOSFET ORDERING INFORMATION Package TO-220 Lead (Pb)-free and Halogen-free SQP90P06-07L-GE3 ABSOLUTE MAXIMUM RATINGS (TC = 25 °C, unless otherwise noted) PARAMETER SYMBOL LIMIT Drain-Source Voltage VDS -60 Gate-Source Voltage VGS ± 20 Continuous Drain Current a TC = 25 °C a TC = 125 °C Continuous Source Current (Diode Conduction) a Pulsed Drain Current b Single Pulse Avalanche Current L = 0.1 mH Single Pulse Avalanche Energy Maximum Power Dissipation b TC = 25 °C TC = 125 °C Operating Junction and Storage Temperature Range ID UNIT V -120 -87 IS -120 IDM -480 IAS -80 EAS 320 PD A mJ 300 W 100 TJ, Tstg -55 to +175 °C SYMBOL LIMIT UNIT RthJA 40 RthJC 0.5 THERMAL RESISTANCE RATINGS PARAMETER Junction-to-Ambient Junction-to-Case (Drain) PCB Mount c °C/W Notes a. Package limited. b. Pulse test; pulse width ≤ 300 μs, duty cycle ≤ 2 %. c. When mounted on 1" square Pcb (Fr-4 material). d. Parametric verification ongoing. S14-0585-Rev. A, 17-Mar-14 Document Number: 62665 1 For technical questions, contact: [email protected] THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000 SQP90P06-07L www.vishay.com Vishay Siliconix SPECIFICATIONS (TC = 25 °C, unless otherwise noted) PARAMETER SYMBOL TEST CONDITIONS MIN. TYP. MAX. UNIT Static Drain-Source Breakdown Voltage Gate-Source Threshold Voltage Gate-Source Leakage Zero Gate Voltage Drain Current On-State Drain Current a Drain-Source On-State Resistance a Forward Transconductance b VDS VGS = 0, ID = -250 μA -60 - - VGS(th) VDS = VGS, ID = -250 μA -1.5 -2.0 -2.5 IGSS VDS = 0 V, VGS = ± 20 V - - ± 100 -1 IDSS ID(on) RDS(on) gfs VGS = 0 V VDS = -60 V - - VGS = 0 V VDS = -60 V, TJ = 125 °C - - -50 VGS = 0 V VDS = -60 V, TJ = 175 °C - - -250 VGS = -10 V VDS ≤ -5 V -120 - - VGS = -10 V ID = -30 A - 0.0056 0.0067 VGS = -10 V ID = -30 A, TJ = 125 °C - - 0.0110 VGS = -10 V ID = -30 A, TJ = 175 °C - - 0.0130 VGS = -4.5 V ID = -20 A - 0.0070 0.0088 - 90 - - 11 423 14 280 VDS = -15 V, ID = -30 A V nA μA A Ω S Dynamic b Input Capacitance Ciss Output Capacitance Coss - 1034 1295 Reverse Transfer Capacitance Crss - 809 1015 Total Gate Charge c Qg - 180 270 Gate-Source Charge c Qgs - 31 - Gate-Drain Charge c Gate Resistance Turn-On Delay Time c Rise Time c Turn-Off Delay Fall Time c VGS = -10 V VDS = -25 V, f = 1 MHz VDS = -30 V, ID = -110 A Qgd Rg f = 1 MHz td(on) tr Time c VGS = 0 V td(off) VDD = -30 V, RL = 0.27 Ω ID ≅ -110 A, VGEN = -10 V, Rg = 1 Ω tf pF nC - 43 - 1.1 2.27 3.5 - 15 23 - 23 35 - 97 146 - 32 48 - - -480 A - -0.95 -1.5 V Ω ns Source-Drain Diode Ratings and Characteristics b Pulsed Current a ISM Forward Voltage VSD IF = -100 A, VGS = 0 Notes a. Pulse test; pulse width ≤ 300 μs, duty cycle ≤ 2 %. b. Guaranteed by design, not subject to production testing. c. Independent of operating temperature. Stresses beyond those listed under “Absolute Maximum Ratings” may cause permanent damage to the device. These are stress ratings only, and functional operation of the device at these or any other conditions beyond those indicated in the operational sections of the specifications is not implied. Exposure to absolute maximum rating conditions for extended periods may affect device reliability. S14-0585-Rev. A, 17-Mar-14 Document Number: 62665 2 For technical questions, contact: [email protected] THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000 SQP90P06-07L www.vishay.com Vishay Siliconix TYPICAL CHARACTERISTICS (TA = 25 °C, unless otherwise noted) 150 200 V GS = 10 V thru 5 V 120 ID - Drain Current (A) ID - Drain Current (A) 160 V GS = 4 V 120 80 90 60 T C = 25 °C 30 40 T C = 125 °C V GS = 3 V T C = - 55 °C 0 0 0 3 6 9 12 VDS - Drain-to-Source Voltage (V) 0 15 1 2 3 4 VGS - Gate-to-Source Voltage (V) Transfer Characteristics 200 0.020 160 0.016 RDS(on) - On-Resistance (Ω) g fs - Transconductance (S) Output Characteristics T C = - 55 °C 120 T C = 25 °C 80 T C = 125 °C 40 0.012 V GS = 4.5 V 0.008 V GS = 10 V 0.004 0 0 0 16 32 48 ID - Drain Current (A) 64 80 0 20 Transconductance 40 60 80 ID - Drain Current (A) 100 120 On-Resistance vs. Drain Current 10 15 000 ID = 110 A VGS - Gate-to-Source Voltage (V) Ciss 12 500 C - Capacitance (pF) 5 10 000 7500 5000 2500 Coss 8 V DS = 30 V 6 4 2 Crss 0 0 0 10 20 30 40 50 VDS - Drain-to-Source Voltage (V) Capacitance S14-0585-Rev. A, 17-Mar-14 60 0 20 40 60 80 100 120 140 160 180 200 Qg - Total Gate Charge (nC) Gate Charge Document Number: 62665 3 For technical questions, contact: [email protected] THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000 SQP90P06-07L www.vishay.com Vishay Siliconix TYPICAL CHARACTERISTICS (TA = 25 °C, unless otherwise noted) 100 ID = 30 A 10 1.7 V GS = 10 V IS - Source Current (A) RDS(on) - On-Resistance (Normalized) 2.0 1.4 1.1 0.8 T J = 150 °C 1 T J = 25 °C 0.1 0.01 0.5 - 50 0.001 - 25 0 25 50 75 100 125 150 0 175 0.2 TJ - Junction Temperature (°C) On-Resistance vs. Junction Temperature 1.2 Source Drain Diode Forward Voltage 0.05 1.2 0.9 0.04 ID = 250 μA VGS(th) Variance (V) RDS(on) - On-Resistance (Ω) 0.4 0.6 0.8 1.0 VSD - Source-to-Drain Voltage (V) 0.03 0.02 0.6 ID = 5 mA 0.3 0 T J = 150 °C 0.01 - 0.3 T J = 25 °C 0 0 2 4 6 8 VGS - Gate-to-Source Voltage (V) 10 - 0.6 - 50 - 25 0 On-Resistance vs. Gate-to-Source Voltage 25 50 75 100 TJ - Temperature (°C) 125 150 175 Threshold Voltage - 60 VDS - Drain-to-Source Voltage (V) ID = 10 mA - 64 - 68 - 72 - 76 - 80 - 50 - 25 0 25 50 75 100 125 TJ - Junction Temperature (°C) 150 175 Drain Source Breakdown vs. Junction Temperature S14-0585-Rev. A, 17-Mar-14 Document Number: 62665 4 For technical questions, contact: [email protected] THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000 SQP90P06-07L www.vishay.com Vishay Siliconix THERMAL RATINGS (TA = 25 °C, unless otherwise noted) 1000 100 μs IDM Limited ID - Drain Current (A) 100 1 ms ID Limited 10 10 ms 100 ms, 1 s, 10 s, DC Limited by RDS(on)* 1 BVDSS Limited TC = 25 °C Single Pulse 0.1 0.01 0.01 0.1 1 10 100 VDS - Drain-to-Source Voltage (V) * VGS > minimum VGS at which RDS(on) is specified Safe Operating Area Normalized Effective Transient Thermal Impedance 1 0.1 0.01 0.001 0.0001 10-4 10-3 10-2 10-1 1 10 100 1000 Square Wave Pulse Duration (s) Normalized Thermal Transient Impedance, Junction-to-Ambient S14-0585-Rev. A, 17-Mar-14 Document Number: 62665 5 For technical questions, contact: [email protected] THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000 SQP90P06-07L www.vishay.com Vishay Siliconix THERMAL RATINGS (TA = 25 °C, unless otherwise noted) 1 Normalized Effective Transient Thermal Impedance Duty Cycle = 0.5 0.2 0.1 0.1 0.05 0.02 Single Pulse 0.01 10-4 10-3 10-2 10-1 1 Square Wave Pulse Duration (s) Normalized Thermal Transient Impedance, Junction-to-Case Note • The characteristics shown in the two graphs - Normalized Transient Thermal Impedance Junction-to-Ambient (25 °C) - Normalized Transient Thermal Impedance Junction-to-Case (25 °C) are given for general guidelines only to enable the user to get a “ball park” indication of part capabilities. The data are extracted from single pulse transient thermal impedance characteristics which are developed from empirical measurements. The latter is valid for the part mounted on printed circuit board - FR4, size 1" x 1" x 0.062", double sided with 2 oz. copper, 100 % on both sides. The part capabilities can widely vary depending on actual application parameters and operating conditions. Vishay Siliconix maintains worldwide manufacturing capability. Products may be manufactured at one of several qualified locations. Reliability data for Silicon Technology and Package Reliability represent a composite of all qualified locations. For related documents such as package/tape drawings, part marking, and reliability data, see www.vishay.com/ppg?62665. S14-0585-Rev. A, 17-Mar-14 Document Number: 62665 6 For technical questions, contact: [email protected] THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000 Ordering Information www.vishay.com Vishay Siliconix TO-220 Ordering codes for the SQ rugged series power MOSFETs in the TO-220 package: DATASHEET PART NUMBER OLD ORDERING CODE a NEW ORDERING CODE SQP100N04-3m6 - SQP100N04-3M6_GE3 SQP100P06-9m3L - SQP100P06-9M3L_GE3 SQP120N06-06 - SQP120N06-06_GE3 SQP120N06-3m5L SQP120N06-3M5L-GE3 SQP120N06-3M5L_GE3 SQP120N10-09 SQP120N10-09-GE3 SQP120N10-09_GE3 SQP120N10-3m8 SQP120N10-3M8-GE3 SQP120N10-3M8_GE3 SQP25N15-52 - SQP25N15-52_GE3 SQP50N06-09L SQP50N06-09L-GE3 SQP50N06-09L_GE3 SQP50P03-07 SQP50P03-07-GE3 SQP50P03-07_GE3 SQP60N06-15 SQP60N06-15-GE3 SQP60N06-15_GE3 SQP90P06-07L SQP90P06-07L-GE3 SQP90P06-07L_GE3 Note a. Old ordering code is obsolete and no longer valid for new orders Revision: 12-Nov-15 Document Number: 67167 1 For technical questions, contact: [email protected] THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000 Package Information www.vishay.com Vishay Siliconix TO-220AB MILLIMETERS A E F D H(1) Q ØP 3 2 L(1) 1 M* L b(1) INCHES DIM. MIN. MAX. MIN. MAX. A 4.25 4.65 0.167 0.183 b 0.69 1.01 0.027 0.040 b(1) 1.20 1.73 0.047 0.068 c 0.36 0.61 0.014 0.024 D 14.85 15.49 0.585 0.610 D2 12.19 12.70 0.480 0.500 E 10.04 10.51 0.395 0.414 e 2.41 2.67 0.095 0.105 e(1) 4.88 5.28 0.192 0.208 F 1.14 1.40 0.045 0.055 H(1) 6.09 6.48 0.240 0.255 0.115 J(1) 2.41 2.92 0.095 L 13.35 14.02 0.526 0.552 L(1) 3.32 3.82 0.131 0.150 ØP 3.54 3.94 0.139 0.155 Q 2.60 3.00 0.102 0.118 ECN: T14-0413-Rev. P, 16-Jun-14 DWG: 5471 Note * M = 1.32 mm to 1.62 mm (dimension including protrusion) Heatsink hole for HVM C b e J(1) e(1) D2 Document Number: 71195 1 For technical questions, contact: [email protected] THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000 Revison: 16-Jun-14 Legal Disclaimer Notice www.vishay.com Vishay Disclaimer ALL PRODUCT, PRODUCT SPECIFICATIONS AND DATA ARE SUBJECT TO CHANGE WITHOUT NOTICE TO IMPROVE RELIABILITY, FUNCTION OR DESIGN OR OTHERWISE. Vishay Intertechnology, Inc., its affiliates, agents, and employees, and all persons acting on its or their behalf (collectively, “Vishay”), disclaim any and all liability for any errors, inaccuracies or incompleteness contained in any datasheet or in any other disclosure relating to any product. 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We confirm that all the products identified as being compliant to Directive 2002/95/EC conform to Directive 2011/65/EU. Vishay Intertechnology, Inc. hereby certifies that all its products that are identified as Halogen-Free follow Halogen-Free requirements as per JEDEC JS709A standards. Please note that some Vishay documentation may still make reference to the IEC 61249-2-21 definition. We confirm that all the products identified as being compliant to IEC 61249-2-21 conform to JEDEC JS709A standards. Revision: 02-Oct-12 1 Document Number: 91000