Composite Transistors XN04608 (XN4608) Silicon NPN epitaxial planer transistor (Tr1) Silicon PNP epitaxial planer transistor (Tr2) Two elements incorporated into one package. Reduction of the mounting area and assembly cost by one half. 3 2 0.4±0.2 5° 2.8+0.2 –0.3 6 1 (0.65) ● 5 0.16+0.10 –0.06 1.50+0.25 –0.05 4 ■ Features ● Unit: mm 2.90+0.20 –0.05 1.9±0.1 (0.95) (0.95) For general amplification (Tr1) For amplification of low frequency output (Tr2) 0.30+0.10 –0.05 0.50+0.10 –0.05 2SD0601A(2SD601A) + 2SB0970(2SB970) ■ Absolute Maximum Ratings Parameter 0 to 0.1 ● 1.1+0.2 –0.1 ■ Basic Part Number of Element 1 : Collector (Tr1) 2 : Base (Tr2) 3 : Emitter (Tr2) (Ta=25˚C) Symbol Ratings Unit Collector to base voltage VCBO 60 V Collector to emitter voltage VCEO 50 V Emitter to base voltage VEBO 7 V Collector current IC 100 mA Peak collector current ICP 200 mA Collector to base voltage VCBO –15 V Collector to emitter voltage VCEO –10 V Emitter to base voltage VEBO –7 V Collector current IC – 0.5 A Peak collector current ICP –1 A Total power dissipation PT 300 mW Overall Junction temperature Tj 150 ˚C Tstg –55 to +150 ˚C Tr1 Tr2 Storage temperature 1.1+0.3 –0.1 10° 4 : Collector (Tr2) 5 : Base (Tr1) 6 : Emitter (Tr1) EIAJ : SC–74 Mini6-G1 Package Marking Symbol: 5E Internal Connection 6 Tr1 2 5 4 1 Tr2 3 Note) The Part number in the Parenthesis shows conventional part number. 1 Composite Transistors XN04608 ■ Electrical Characteristics ● (Ta=25˚C) Tr1 Parameter Symbol Collector to base voltage Conditions min typ max Unit VCBO IC = 10µA, IE = 0 60 V Collector to emitter voltage VCEO IC = 2mA, IB = 0 50 V Emitter to base voltage VEBO IE = 10µA, IC = 0 7 V ICBO VCB = 20V, IE = 0 0.1 µA ICEO VCE = 10V, IB = 0 100 µA Forward current transfer ratio hFE VCE = 10V, IC = 2mA Collector to emitter saturation voltage VCE(sat) IC = 100mA, IB = 10mA 0.1 Transition frequency fT VCB = 10V, IE = –2mA, f = 200MHz 150 MHz Collector output capacitance Cob VCB = 10V, IE = 0, f = 1MHz 3.5 pF Collector cutoff current ● 160 460 0.3 V Tr2 Parameter Symbol Collector to base voltage Conditions min typ max Unit VCBO IC = –10µA, IE = 0 –15 V Collector to emitter voltage VCEO IC = –1mA, IB = 0 –10 V Emitter to base voltage VEBO IE = –10µA, IC = 0 –7 V Collector cutoff current ICBO VCB = –10V, IE = 0 hFE1 VCE = –2V, IC = –0.5A* 100 60 Forward current transfer ratio – 0.1 µA 350 hFE2 VCE = –2V, IC = –1A* Collector to emitter saturation voltage VCE(sat) IC = –0.4A, IB = –8mA – 0.16 – 0.3 Base to emitter saturation voltage VBE(sat) IC = –0.4A, IB = –8mA – 0.8 –1.2 Transition frequency fT VCB = –10V, IE = 50mA, f = 200MHz 130 MHz Collector output capacitance Cob VCB = –10V, IE = 0, f = 1MHz 22 pF V V * Pulse measurement Common characteristics chart PT — Ta Total power dissipation PT (mW) 500 400 300 200 100 0 0 40 80 120 160 Ambient temperature Ta (˚C) 2 Composite Transistors XN04608 Characteristics charts of Tr1 IC — VCE IB — VBE Ta=25˚C VCE=10V VCE=10V Ta=25˚C IB=160µA 50 200 40 120µA 100µA 30 80µA 20 60µA 40µA 10 Collector current IC (mA) 1000 140µA Base current IB (µA) Collector current IC (mA) IC — VBE 240 1200 60 800 600 400 160 25˚C 120 Ta=75˚C –25˚C 80 40 200 20µA 0 0 0 2 4 6 8 10 0 Collector to emitter voltage VCE (V) 0.2 IC — IB Collector to emitter saturation voltage VCE(sat) (V) 200 160 120 80 40 0 0 200 400 600 0.8 0 1.0 0.4 800 10 3 1 0.3 25˚C Ta=75˚C 0.01 0.1 1000 –25˚C Base current IB (µA) 0.3 1 3 10 30 100 Collector current IC (mA) fT — IE 1.6 2.0 hFE — IC 30 0.03 1.2 600 IC/IB=10 0.1 0.8 Base to emitter voltage VBE (V) VCE(sat) — IC 100 VCE=10V Ta=25˚C Collector current IC (mA) 0.6 Base to emitter voltage VBE (V) 240 VCE=10V 500 400 Ta=75˚C 25˚C 300 –25˚C 200 100 0 0.1 0.3 1 3 10 30 100 Collector current IC (mA) NV — IC 240 300 VCB=10V Ta=25˚C 240 Noise voltage NV (mV) Transition frequency fT (MHz) 0.4 Forward current transfer ratio hFE 0 180 120 60 VCE=10V GV=80dB 200 Function=FLAT Ta=25˚C 160 Rg=100kΩ 120 80 22kΩ 4.7kΩ 40 0 –0.1 –0.3 –1 –3 –10 –30 Emitter current IE (mA) –100 0 10 20 30 50 100 200 300 500 1000 Collector current IC (µA) 3 Composite Transistors XN04608 Characteristics charts of Tr2 VBE(sat) — IC –100 IC/IB=50 IB=–10mA –0.8 –5mA –0.6 –4mA –3mA –0.4 –2mA –0.2 –1mA 0 0 –1 –2 –3 –4 –5 –6 –30 –10 –3 25˚C Ta=–25˚C –1 75˚C –0.3 –0.1 –0.03 –0.01 –0.01 –0.03 –0.1 –0.3 hFE — IC Transition frequency fT (MHz) Forward current transfer ratio hFE 500 Ta=75˚C 25˚C 300 –25˚C 200 100 Ta=75˚C –0.3 25˚C –25˚C –0.1 –0.03 –0.01 –0.01 –0.03 –0.1 –0.3 –3 Collector current IC (A) –10 120 80 40 2 3 5 10 –3 –10 Cob — VCB 160 1 –1 80 0 –1 –1 Collector current IC (A) VCB=–10V Ta=25˚C VCE=–2V 4 –10 –3 fT — I E 200 600 0 –0.01 –0.03 –0.1 –0.3 –3 –10 Collector current IC (A) Collector to emitter voltage VCE (V) 400 –1 IC/IB=50 –30 Collector output capacitance Cob (pF) Collector current IC (A) –9mA –8mA –7mA –6mA Base to emitter saturation voltage VBE(sat) (V) Ta=25˚C –1.0 VCE(sat) — IC –100 Collector to emitter saturation voltage VCE(sat) (V) IC — VCE –1.2 20 30 50 Emitter current IE (mA) 100 f=1MHz IE=0 Ta=25˚C 70 60 50 40 30 20 10 0 –1 –2 –3 –5 –10 –20 –30 –50 –100 Collector to base voltage VCB (V) Request for 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