Composite Transistors XP04654 (XP4654) Silicon NPN epitaxial planar type (Tr1) Silicon PNP epitaxial planar type (Tr2) 0.2±0.05 5 0.12+0.05 –0.02 1.25±0.10 2.1±0.1 4 5˚ • Two elements incorporated into one package • Reduction of the mounting area and assembly cost by one half 1 3 2 0.2±0.1 6 ■ Features Unit: mm (0.425) For high-speed switching (0.65) (0.65) ■ Basic Part Number 1.3±0.1 2.0±0.1 • 2SC3757 + 2SA1738 Tr2 Overall Symbol Rating Unit Collector-base voltage (Emitter open) VCBO 40 V Collector-emitter voltage (E-B short) VCES 40 V Emitter-base voltage (Collector open) VEBO 5 V Collector current IC 100 mA Peak collector current ICP 300 mA Collector-base voltage (Emitter open) VCBO −15 V Collector-emitter voltage (E-B short) VCES −15 V Emitter-base voltage (Collector open) VEBO −4 V Collector current IC −50 mA Peak collector current ICP −100 mA Total power dissipation PT 150 mW Junction temperature Tj 150 °C Storage temperature Tstg −55 to +150 °C 1: Emitter (Tr1) 2: Base (Tr1) 3: Collector (Tr2) EIAJ: SC-88 0 to 0.1 Parameter Tr1 0.9±0.1 ■ Absolute Maximum Ratings Ta = 25°C 0.9+0.2 –0.1 10˚ 4: Emitter (Tr2) 5: Base (Tr2) 6: Collector (Tr1) SMini6-G1 Package Marking Symbol: ED Internal Connection 6 5 Tr1 1 4 Tr2 2 3 Note) The part number in the parenthesis shows conventional part number. Publication date: February 2004 SJJ00188BED 1 XP04654 ■ Electrical Characteristics Ta = 25°C ± 3°C • Tr1 Parameter Symbol Collector-base cutoff current (Emitter open) ICBO VCB = 40 V, IE = 0 Emitter-base cutoff current (Collector open) IEBO VEB = 4 V, IC = 0 Forward current transfer ratio hFE VCE = 1 V, IC = 10 mA Collector-emitter saturation voltage VCE(sat) IC = 10 mA, IB = 1 mA Base-emitter saturation voltage VBE(sat) IC = 10 mA, IB = 1 mA Transition frequency fT Conditions Min Typ 60 0.17 Max Unit 0.1 µA 0.1 µA 320 0.25 V 1.0 VCB = 10 V, IE = −10 mA, f = 200 MHz 450 V MHz Cob VCB = 10 V, IE = 0, f = 1 MHz 2 Turn-on time ton Refer to the switching time measurement 17 ns Turn-off time toff circuit 17 ns Storage time tstg 10 ns Collector output capacitance (Common base, input open circuited) 6 pF Note) Measuring methods are based on JAPANESE INDUSTRIAL STANDARD JIS C 7030 measuring methods for transistors. • Tr2 Parameter Symbol Collector-base cutoff current (Emitter open) ICBO VCB = −8 V, IE = 0 Emitter-base cutoff current (Collector open) IEBO VEB = −3 V, IC = 0 Forward current transfer ratio hFE1 VCE = −1 V, IC = −10 mA 50 hFE2 VCE = −1 V, IC = −1 mA 30 VCE(sat) IC = −10 mA, IB = −1 mA Collector-emitter saturation voltage Transition frequency fT Conditions VCB = −10 V, IE = 10 mA, f = 200 MHz Min Typ − 0.1 800 Max Unit − 0.1 µA − 0.1 µA 150 − 0.2 V 1 500 MHz Collector output capacitance (Common base, input open circuited) Cob VCB = −5 V, IE = 0, f = 1 MHz 1 pF Turn-on time ton Refer to the switching time measurement circuit 12 ns Turn-off time toff 20 ns Storage time tstg 19 ns Note) Measuring methods are based on JAPANESE INDUSTRIAL STANDARD JIS C 7030 measuring methods for transistors. Common characteristics chart PT Ta Total power dissipation PT (mW) 250 200 150 100 50 0 0 40 80 120 160 Ambient temperature Ta (°C) 2 SJJ00188BED XP04654 Characteristics charts of Tr1 Switching time measurement circuit ton , toff test circuit tstg test circuit 0.1 µF 0.1 µF VOUT VOUT A 220 Ω 50 Ω VIN = 10 V 3.3 kΩ VCC = 3 V 3.3 kΩ 50 Ω VIN = 10 V 0.1 µF VCC = 10 V VBB = 2 V 10% VIN 90 Ω 500 Ω 500 Ω 50 Ω VBB = −3 V 1 kΩ 910 Ω 10% VIN 10% 90% VOUT VOUT 90% ton toff 10% tstg (Waveform at A) VCE(sat) IC IB = 3.0 mA 2.5 mA 80 2.0 mA 1.5 mA 60 1.0 mA 40 0.5 mA 20 0 0 0.2 0.4 0.6 0.8 1.0 1.2 10 1 25°C 0.01 0.1 Transition frequency fT (MHz) Forward current transfer ratio hFE 0.1 100 1 300 Ta = 75°C 25°C −25°C 10 Collector current IC (mA) 100 400 300 200 100 −10 −100 Emitter current IE (mA) SJJ00188BED 100 1 000 Cob VCB 500 0 −1 10 Collector current IC (mA) VCB = 10 V Ta = 25°C 400 1 10 Ta = −25°C 25°C 75°C 1 fT I E 500 0 0.1 10 0.01 1 600 VCE = 1 V 100 100 Collector current IC (mA) hFE IC 200 Ta = 75°C −25°C 0.1 Collector-emitter voltage VCE (V) 600 VBE(sat) IC IC / IB = 10 Base-emitter saturation voltage VBE(sat) (V) 100 100 −1 000 Collector output capacitance C (pF) (Common base, input open circuited) ob Collector current IC (mA) Ta = 25°C Collector-emitter saturation voltage VCE(sat) (V) IC VCE 120 6 IE = 0 f = 1 MHz Ta = 25°C 5 4 3 2 1 0 1 10 100 Collector-base voltage VCB (V) 3 XP04654 Characteristics charts of Tr2 Switching time measurement circuit ton , toff test circuit VCC = −1.5 V VBB 52 Ω 508 Ω 0.1 µF VIN 51 Ω 0 51 Ω 10% VIN 0 90% 90% VOUT ton VIN = −5.8 V VBB = Ground tstg toff VIN = 9.8 V VBB = −8.0 V VIN = 9.0 V IC VCE VCE(sat) IC Collector current IC (mA) −100 Ta = 25°C IB = −600 µA −500 µA −400 µA −40 −300 µA −30 −200 µA −20 −100 µA −10 0 −2 0 −4 −6 −8 −10 −12 Collector-emitter saturation voltage VCE(sat) (V) −60 −50 −10 Ta = 75°C 25°C −25°C −1 − 0.1 − 0.01 −1 Ta = 75°C 40 0 − 0.1 25°C −25°C −1 −10 Collector current IC (mA) 4 −10 −100 2 400 Transition frequency fT (MHz) Forward current transfer ratio hFE 160 −100 −1 000 − 0.01 −1 1 200 800 400 10 Emitter current IE (mA) SJJ00188BED −100 −1 000 Cob VCB 1 600 1 −10 Collector current IC (mA) VCB = −10 V f = 200 MHz Ta = 25°C 2 000 0 Ta = −25°C 25°C 75°C −1 fT I E 200 IC / IB = 10 −10 Collector current IC (mA) VCE = −10 V 80 −100 − 0.1 hFE IC 120 VBE(sat) IC IC / IB = 10 Collector-emitter voltage VCE (V) 240 90% 90% VOUT 10% Base-emitter saturation voltage VBE(sat) (V) VIN 30 Ω VOUT 34 Ω 100 Collector output capacitance C (pF) (Common base, input open circuited) ob VIN VBB = −10 V VCC = −3 V 62 Ω VOUT 2 kΩ 0.1 µF tstg test circuit 2.4 IE = 0 f = 1 MHz Ta = 25°C 2.0 1.6 1.2 0.8 0.4 0 −1 −10 −100 Collector-base voltage VCB (V) Request for your special attention and precautions in using the technical information and semiconductors described in this material (1) An export permit needs to be obtained from the competent authorities of the Japanese Government if any of the products or technical information described in this material and controlled under the "Foreign Exchange and Foreign Trade Law" is to be exported or taken out of Japan. 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