Composite Transistors XP05601 (XP5601) Silicon PNP epitaxial planar type (Tr1) Silicon NPN epitaxial planar type (Tr2) 0.2±0.05 5 0.12+0.05 –0.02 1.25±0.10 2.1±0.1 4 5˚ • Two elements incorporated into one package • Reduction of the mounting area and assembly cost by one half 1 3 2 0.2±0.1 6 ■ Features Unit: mm (0.425) For general amplification (0.65) (0.65) 1.3±0.1 2.0±0.1 ■ Basic Part Number • 2SB0709A (2SB709A) + 2SD0601A (2SD601A) Tr2 Overall Symbol Rating Unit Collector-base voltage (Emitter open) VCBO −60 V Collector-emitter voltage (Base open) VCEO −50 V Emitter-base voltage (Collector open) VEBO −7 V Collector current IC −100 mA Peak collector current ICP −200 mA Collector-base voltage (Emitter open) VCBO 60 V Collector-emitter voltage (Base open) VCEO 50 V Emitter-base voltage (Collector open) VEBO 7 V Collector current IC 100 mA Peak collector current ICP 200 mA Total power dissipation PT 150 mW 0 to 0.1 Parameter Tr1 0.9±0.1 ■ Absolute Maximum Ratings Ta = 25°C 1: Emitter (Tr1) 2: Base (Tr1) 3: Base (Tr2) EIAJ: SC-88 4: Collector (Tr2) 5: Emitter (Tr2) 6: Collector (Tr1) SMini6-G1 Package Marking Symbol: 4N Internal Connection 6 5 Tr1 Junction temperature Tj 150 °C Storage temperature Tstg −55 to +150 °C 0.9+0.2 –0.1 10˚ 1 4 Tr2 2 3 Note) The part number in the parenthesis shows conventional part number. Publication date: February 2004 SJJ00197BED 1 XP05601 ■ Electrical Characteristics Ta = 25°C ± 3°C • Tr1 Parameter Symbol Collector-base voltage (Emitter open) VCBO IC = −10 µA, IE = 0 −60 Collector-emitter voltage (Base open) VCEO IC = −2 mA, IB = 0 −50 V Emitter-base voltage (Collector open) VEBO IE = −10 µA, IC = 0 −7 V Collector-base cutoff current (Emitter open) ICBO VCB = −20 V, IE = 0 − 0.1 µA Collector-emitter cutoff current (Base open) ICEO VCE = −10 V, IB = 0 −100 µA hFE VCE = −10 V, IC = −2 mA 460 − 0.5 V Forward current transfer ratio Collector-emitter saturation voltage VCE(sat) Transition frequency fT Collector output capacitance (Common base, input open circuited) Cob Conditions Min Typ Unit V 160 IC = −100 mA, IB = −10 mA Max − 0.3 VCB = −10 V, IE = 1 mA, f = 200 MHz 80 MHz VCB = −10 V, IE = 0, f = 1 MHz 2.7 pF Note) Measuring methods are based on JAPANESE INDUSTRIAL STANDARD JIS C 7030 measuring methods for transistors. • Tr2 Parameter Symbol Collector-base voltage (Emitter open) VCBO IC = 10 µA, IE = 0 60 V Collector-emitter voltage (Base open) VCEO IC = 2 mA, IB = 0 50 V Emitter-base voltage (Collector open) VEBO IE = 10 µA, IC = 0 7 Collector-base cutoff current (Emitter open) ICBO VCB = 20 V, IE = 0 Collector-emitter cutoff current (Base open) ICEO VCE = 10 V, IB = 0 Forward current transfer ratio hFE VCE = 10 V, IC = 2 mA Collector-emitter saturation voltage VCE(sat) Transition frequency fT Collector output capacitance (Common base, input open circuited) Cob Conditions Min Typ Max Unit V 160 0.1 µA 100 µA 460 IC = 100 mA, IB = 10 mA 0.1 VCB = 10 V, IE = −2 mA, f = 200 MHz 150 MHz VCB = 10 V, IE = 0, f = 1 MHz 3.5 pF 0.3 V Note) Measuring methods are based on JAPANESE INDUSTRIAL STANDARD JIS C 7030 measuring methods for transistors. Common characteristics chart PT Ta Total power dissipation PT (mW) 250 200 150 100 50 0 0 40 80 120 160 Ambient temperature Ta (°C) 2 SJJ00197BED XP05601 Characteristics charts of Tr1 IC VCE IC I B Ta = 25°C Collector current IC (mA) −200 µA −150 µA −20 −100 µA −10 −4 −8 −12 −200 −30 −150 −20 −100 −10 −50 µA 0 −250 0 −16 −50 0 VCE = −5 V 25°C Collector current IC (mA) Ta = 75°C −25°C −160 −120 −80 0 −0.4 −0.8 −1.2 −10 −1.6 −2.0 −10−3 −1 Ta = 75°C 25°C 300 Collector output capacitance C (pF) (Common base, input open circuited) ob 100 80 60 40 20 10 Emitter current IE (mA) 102 VCE = −10 V Ta = 75°C 25°C −25°C 100 −10 −102 −103 Collector current IC (mA) NF IE 6 f = 1 MHz IE = 0 Ta = 25°C 7 −1.6 200 Cob VCB 120 1 400 0 −1 −103 −102 8 −1.2 500 Collector current IC (mA) VCB = −10 V Ta = 25°C 0 10−1 −10 −0.8 hFE IC −25°C fT I E 140 −0.4 600 IC / IB = 10 −1 Base-emitter voltage VBE (V) 160 0 Base-emitter voltage VBE (V) −10−2 0 0 −400 −10−1 −40 Transition frequency fT (MHz) −300 VCE(sat) IC Collector-emitter saturation voltage VCE(sat) (V) IC VBE −200 −200 Base current IB (µA) Collector-emitter voltage VCE (V) −240 −100 Forward current transfer ratio hFE −30 −300 −40 6 5 4 3 VCB = −5 V f = 1 kHz Rg = 2 kΩ Ta = 25°C 5 Noise figure NF (dB) Collector current IC (mA) −40 VCE = – 5 V Ta = 25°C −350 −50 −250 µA 0 VCE = −5 V Ta = 25°C IB = −300 µA −50 IB VBE −400 −60 Base current IB (µA) −60 4 3 2 2 1 1 0 −1 −10 Collector-base voltage VCB SJJ00197BED −102 (V) 0 10−2 10−1 1 10 Emitter current IE (mA) 3 XP05601 h parameter IE NF IE 20 VCB = −5 V Rg = 50 kΩ Ta = 25°C 18 VCE = −5 V f = 270 Hz Ta = 25°C IE = 2 mA f = 270 Hz Ta = 25°C hfe hfe 102 102 12 f = 100 Hz 10 1 kHz 8 h parameter 14 h parameter Noise figure NF (dB) 16 h parameter VCE hoe (µS) 10 hoe (µS) 10 10 kHz 6 hie (kΩ) 4 hre (× 10−4) hie (kΩ) 2 0 10−1 1 hre (× 1 10−1 10 Emitter current IE (mA) 10−4) 1 1 −10−1 10 −1 −10 Collector-emitter voltage VCE (V) Emitter current IE (mA) Characteristics charts of Tr2 IC VCE 60 IC I B Ta = 25°C IB = 160 µA 120 µA 100 µA 30 80 µA 60 µA 20 40 µA 10 4 6 8 120 80 0 10 160 25°C −25°C 80 40 0.4 0.8 1.2 1.6 Base-emitter voltage VBE (V) 4 2.0 Collector-emitter saturation voltage VCE(sat) (V) Collector current IC (mA) 200 0 200 400 600 800 1 000 0 102 25°C Ta = 75°C −25°C 1 10 Collector current IC (mA) SJJ00197BED 0.6 0.8 1.0 hFE IC 1 10−2 10−1 0.4 600 IC / IB = 10 10 10−1 0.2 Base-emitter voltage VBE (V) VCE(sat) IC VCE = 10 V Ta = 75°C 400 Base current IB (µA) IC VBE 120 600 0 0 Collector-emitter voltage VCE (V) 240 800 200 Forward current transfer ratio hFE 2 160 40 20 µA 0 Base current IB (µA) 140 µA Collector current IC (mA) Collector current IC (mA) 1 000 200 40 0 VCE = 10 V Ta = 25°C VCE = 10 V Ta = 25°C 50 0 IB VBE 1 200 240 102 VCE = 10 V 500 Ta = 75°C 400 25°C 300 −25°C 200 100 0 10−1 1 10 Collector current IC (mA) 102 XP05601 fT I E NV IC 240 VCB = 10 V Ta = 25°C VCE = 10 V GV = 80 dB 200 Function = FLAT Ta = 25°C 240 Noise voltage NV (mV) Transition frequency fT (MHz) 300 180 120 60 0 −10−1 160 120 Rg = 100 kΩ 80 22 kΩ 4.7 kΩ 40 −1 −10 Emitter current IE (mA) −102 0 10 102 103 Collector current IC (µA) SJJ00197BED 5 Request for your special attention and precautions in using the technical information and semiconductors described in this material (1) An export permit needs to be obtained from the competent authorities of the Japanese Government if any of the products or technical information described in this material and controlled under the "Foreign Exchange and Foreign Trade Law" is to be exported or taken out of Japan. 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