Composite Transistors XN04601 (XN4601) Silicon NPN epitaxial planar type (Tr1) Silicon PNP epitaxial planar type (Tr2) Unit: mm 2.90+0.20 –0.05 1.9±0.1 (0.95) (0.95) 6 2 1 (0.65) 3 0.30+0.10 –0.05 ■ Basic Part Number 0.50+0.10 –0.05 • 2SD0601A (2SD601A) + 2SB0709A (2SB709A) Overall 1.1+0.2 –0.1 Rating Unit VCBO 60 V Collector-emitter voltage (Base open) VCEO 50 V Emitter-base voltage (Collector open) VEBO 7 V Collector current IC 100 mA Peak collector current ICP 200 mA Collector-base voltage (Emitter open) VCBO −60 V Collector-emitter voltage (Base open) VCEO −50 V Emitter-base voltage (Collector open) VEBO −7 V Collector current IC −100 mA Peak collector current ICP −200 mA Total power dissipation PT 300 mW 1: Collector (Tr1) 2: Base (Tr2) 3: Emitter (Tr2) EIAJ: SC-74 0 to 0.1 Parameter Tr2 Symbol Collector-base voltage (Emitter open) Tj 150 °C Storage temperature Tstg −55 to +150 °C 4: Collector (Tr2) 5: Base (Tr1) 6: Emitter (Tr1) Mini6-G1 Package Marking Symbol: 5C Internal Connection 4 5 Tr2 Junction temperature 1.1+0.3 –0.1 10˚ ■ Absolute Maximum Ratings Ta = 25°C Tr1 2.8+0.2 –0.3 5 1.50+0.25 –0.05 4 • Two elements incorporated into one package • Reduction of the mounting area and assembly cost by one half 5˚ ■ Features 0.16+0.10 –0.06 0.4±0.2 For general amplification 3 6 Tr1 2 1 Note) The part number in the parenthesis shows conventional part number. Publication date: February 2004 SJJ00083BED 1 XN04601 ■ Electrical Characteristics Ta = 25°C ± 3°C • Tr1 Parameter Symbol Collector-base voltage (Emitter open) VCBO IC = 10 µA, IE = 0 60 V Collector-emitter voltage (Base open) VCEO IC = 2 mA, IB = 0 50 V Emitter-base voltage (Collector open) VEBO IE = 10 µA, IC = 0 7 V Collector-base cutoff current (Emitter open) ICBO VCB = 20 V, IE = 0 0.1 µA Collector-emitter cutoff current (Base open) ICEO VCE = 10 V, IB = 0 100 µA hFE VCE = 10 V, IC = 2 mA 460 0.3 V Forward current transfer ratio Collector-emitter saturation voltage VCE(sat) Transition frequency fT Collector output capacitance (Common base, input open circuited) Cob Conditions Min Typ 160 Max Unit IC = 100 mA, IB = 10 mA 0.1 VCB = 10 V, IE = −2 mA, f = 200 MHz 150 MHz VCB = 10 V, IE = 0, f = 1 MHz 3.5 pF Note) Measuring methods are based on JAPANESE INDUSTRIAL STANDARD JIS C 7030 measuring methods for transistors. • Tr2 Parameter Symbol Collector-base voltage (Emitter open) VCBO IC = −10 µA, IE = 0 −60 V Collector-emitter voltage (Base open) VCEO IC = −2 mA, IB = 0 −50 V Emitter-base voltage (Collector open) VEBO IE = −10 µA, IC = 0 −7 Collector-base cutoff current (Emitter open) ICBO VCB = −20 V, IE = 0 Collector-emitter cutoff current (Base open) ICEO VCE = −10 V, IB = 0 Forward current transfer ratio hFE VCE = −10 V, IC = −2 mA Collector-emitter saturation voltage VCE(sat) Transition frequency fT Collector output capacitance (Common base, input open circuited) Cob Conditions IC = −100 mA, IB = −10 mA Min Typ Max Unit V 160 − 0.3 − 0.1 µA −100 µA 460 − 0.5 V VCB = −10 V, IE = 1 mA, f = 200 MHz 80 MHz VCB = −10 V, IE = 0, f = 1 MHz 2.7 pF Note) Measuring methods are based on JAPANESE INDUSTRIAL STANDARD JIS C 7030 measuring methods for transistors. Common characteristics chart PT Ta Total power dissipation PT (mW) 500 400 300 200 100 0 0 40 80 120 160 Ambient temperature Ta (°C) 2 SJJ00083BED XN04601 Characteristics charts of Tr1 IC VCE 60 IC I B Ta = 25°C IB = 160 µA 100 µA 30 80 µA 60 µA 20 40 µA 10 160 120 80 0 4 6 8 10 VCE = 10 V Collector current IC (mA) 200 160 25°C Ta = 75°C −25°C 80 40 0 0.4 0.8 1.2 1.6 2.0 1 000 0 25°C Ta = 75°C 1 0.6 0.8 1.0 hFE IC −25°C 10−2 10−1 0.4 600 IC / IB = 10 1 10−1 0.2 Base-emitter voltage VBE (V) 102 10 VCE = 10 V 500 Ta = 75°C 400 25°C 300 −25°C 200 100 0 10−1 1 10 102 Collector current IC (mA) NV IC 240 VCB = 10 V Ta = 25°C VCE = 10 V GV = 80 dB 200 Function = FLAT Ta = 25°C 240 180 120 60 160 120 Rg = 100 kΩ 80 22 kΩ 4.7 kΩ 40 −1 800 Collector current IC (mA) Noise voltage NV (mV) Transition frequency fT (MHz) 600 10 fT I E 0 −10−1 400 102 Base-emitter voltage VBE (V) 300 200 VCE(sat) IC Collector-emitter saturation voltage VCE(sat) (V) IC VBE 120 400 Base current IB (µA) Collector-emitter voltage VCE (V) 240 600 0 0 Forward current transfer ratio hFE 2 800 200 40 20 µA 0 Base current IB (µA) 120 µA 40 Collector current IC (mA) Collector current IC (mA) 1 000 200 140 µA 0 VCE = 10 V Ta = 25°C VCE = 10 V Ta = 25°C 50 0 IB VBE 1 200 240 −10 Emitter current IE (mA) −102 0 10 102 103 Collector current IC (µA) SJJ00083BED 3 XN04601 Characteristics charts of Tr2 IC VCE IC I B Ta = 25°C Collector current IC (mA) −200 µA −150 µA −20 −100 µA −10 −4 −8 −12 −200 −30 −150 −20 −100 −10 −50 µA 0 −250 0 −16 −50 0 Collector-emitter voltage VCE (V) Collector current IC (mA) −25°C −160 −120 Collector-emitter saturation voltage VCE(sat) (V) VCE = −5 V Ta = 75°C −80 0 −0.4 −0.8 −1.2 −10 −1.6 −2.0 −10−3 −1 25°C 120 100 80 60 40 20 1 400 300 10 Emitter current IE (mA) 102 8 VCE = −10 V Ta = 75°C 25°C −25°C 100 0 −1 −103 −10 −102 −103 Collector current IC (mA) NF IE 6 f = 1 MHz IE = 0 Ta = 25°C 7 −1.6 200 Cob VCB VCB = −10 V Ta = 25°C 0 10−1 −102 −1.2 500 Collector current IC (mA) Collector output capacitance C (pF) (Common base, input open circuited) ob Transition frequency fT (MHz) Ta = 75°C −10 −0.8 hFE IC −25°C fT I E 140 −0.4 600 IC / IB = 10 −1 Base-emitter voltage VBE (V) 160 0 Base-emitter voltage VBE (V) −10−2 0 0 −400 −10−1 −40 4 −300 VCE(sat) IC 25°C −200 −200 Base current IB (µA) IC VBE −240 −100 Forward current transfer ratio hFE −30 −300 −40 VCB = −5 V f = 1 kHz Rg = 2 kΩ Ta = 25°C 5 6 Noise figure NF (dB) Collector current IC (mA) −40 VCE = – 5 V Ta = 25°C −350 −50 −250 µA 0 VCE = −5 V Ta = 25°C IB = −300 µA −50 IB VBE −400 −60 Base current IB (µA) −60 5 4 3 4 3 2 2 1 1 0 −1 −10 −102 Collector-base voltage VCB (V) SJJ00083BED 0 10−2 10−1 1 Emitter current IE (mA) 10 XN04601 NF IE 20 18 h parameter IE VCB = −5 V Rg = 50 kΩ Ta = 25°C VCE = −5 V f = 270 Hz Ta = 25°C hfe hfe 102 IE = 2 mA f = 270 Hz Ta = 25°C 102 12 f = 100 Hz 10 8 1 kHz h parameter 14 h parameter Noise figure NF (dB) 16 h parameter VCE hoe (µS) 10 hoe (µS) 10 10 kHz 6 hie (kΩ) 4 hre (× 10−4) hie (kΩ) 2 0 10−1 1 Emitter current IE (mA) 10 1 10−1 hre (× 10−4) 1 Emitter current IE (mA) SJJ00083BED 10 1 −10−1 −1 −10 Collector-emitter voltage VCE (V) 5 Request for your special attention and precautions in using the technical information and semiconductors described in this material (1) An export permit needs to be obtained from the competent authorities of the Japanese Government if any of the products or technical information described in this material and controlled under the "Foreign Exchange and Foreign Trade Law" is to be exported or taken out of Japan. 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