Composite Transistors XP04683 (XP4683) Silicon NPN epitaxial planar type (Tr1) Silicon PNP epitaxial planar type (Tr2) 0.2±0.05 5 0.12+0.05 –0.02 ■ Features 5˚ • Two elements incorporated into one package • Reduction of the mounting area and assembly cost by one half 1 3 2 0.2±0.1 4 1.25±0.10 2.1±0.1 6 Unit: mm (0.425) For high-frequency amplification (Tr1) For general amplification (Tr2) (0.65) (0.65) 1.3±0.1 2.0±0.1 ■ Basic Part Number ■ Absolute Maximum Ratings Ta = 25°C Parameter Tr1 Symbol Rating Unit Collector-base voltage (Emitter open) VCBO 30 V Collector-emitter voltage (Base open) VCEO 20 V Emitter-base voltage (Collector open) VEBO 3 V IC 15 mA Collector-base voltage (Emitter open) VCBO −60 V Collector-emitter voltage (Base open) VCEO −50 V Emitter-base voltage (Collector open) VEBO −7 V Collector current IC −100 mA Peak collector current ICP −200 mA Total power dissipation PT 150 mW Junction temperature Tj 150 °C Storage temperature Tstg −55 to +150 °C Collector current Tr2 Overall 1: Emitter (Tr1) 2: Base (Tr1) 3: Collector (Tr2) EIAJ: SC-88 0 to 0.1 0.9±0.1 • 2SC2404 + 2SB0709A (2SB709A) 0.9+0.2 –0.1 10˚ 4: Emitter (Tr2) 5: Base (Tr2) 6: Collector (Tr1) SMini6-G1 Package Marking Symbol: ER Internal Connection 6 5 Tr1 1 4 Tr2 2 3 Note) The part number in the parenthesis shows conventional part number. Publication date: February 2004 SJJ00189BED 1 XP04683 ■ Electrical Characteristics Ta = 25°C ± 3°C • Tr1 Parameter Symbol Collector-base voltage (Emitter open) VCBO IC = 10 µA, IE = 0 Conditions Min 30 Typ Max Unit Emitter-base voltage (Collector open) VEBO IE = 10 µA, IC = 0 3 Base-emitter voltage VBE VCB = 6 V, IE = −1 mA Forward current transfer ratio hFE VCB = 6 V, IE = −1 mA 40 Transition frequency fT VCB = 6 V, IE = −1 mA, f = 200 MHz 450 Reverse transfer capacitance (Common emitter) Cre VCB = 6 V, IE = −1 mA, f = 10.7 MHz Power gain GP VCB = 6 V, IE = −1 mA, f = 100 MHz 24 dB Noise figure NF VCB = 6 V, IE = −1 mA, f = 100 MHz 3.3 dB V V 720 mV 260 650 0.8 MHz 1.0 pF Note) Measuring methods are based on JAPANESE INDUSTRIAL STANDARD JIS C 7030 measuring methods for transistors. • Tr2 Parameter Symbol Collector-base voltage (Emitter open) VCBO IC = −10 µA, IE = 0 −60 V Collector-emitter voltage (Base open) VCEO IC = −2 mA, IB = 0 −50 V Emitter-base voltage (Collector open) VEBO IE = −10 µA, IC = 0 −7 Collector-base cutoff current (Emitter open) ICBO VCB = −20 V, IE = 0 Collector-emitter cutoff current (Base open) ICEO VCE = −10 V, IB = 0 Forward current transfer ratio hFE VCE = −10 V, IC = −2 mA Collector-emitter saturation voltage VCE(sat) Transition frequency fT Collector output capacitance (Common base, input open circuited) Cob Conditions IC = −100 mA, IB = −10 mA Min Typ Max Unit V 160 − 0.3 − 0.1 µA −100 µA 460 − 0.5 V VCB = −10 V, IE = 1 mA, f = 200 MHz 80 MHz VCB = −10 V, IE = 0, f = 1 MHz 2.7 pF Note) Measuring methods are based on JAPANESE INDUSTRIAL STANDARD JIS C 7030 measuring methods for transistors. Common characteristics chart PT Ta Total power dissipation PT (mW) 250 200 150 100 50 0 0 40 80 120 160 Ambient temperature Ta (°C) 2 SJJ00189BED XP04683 Characteristics charts of Tr1 IC VCE IC I B Ta = 25°C 40 µA 20 µA 8 6 4 0 6 12 18 1 25°C Ta = 75°C −25°C 1 0.4 VCB = 6 V f = 2 MHz Ta = 25°C 60 40 20 Emitter current IE (mA) −10 1.2 1.6 2.0 fT I E VCB = 6 V Ta = 25°C 240 Ta = 75°C 180 25°C −25°C 120 60 1 10 800 600 400 200 0 −10−1 102 −1 1.6 1.2 0.8 0.4 0 10−1 1 10 Collector-emitter voltage VCE SJJ00189BED −102 Cob VCB IC = 1 mA f = 10.7 MHz Ta = 25°C 2.0 −10 Emitter current IE (mA) Cre VCE −1 0.8 Base-emitter voltage VBE (V) 1 000 2.4 Reverse transfer capacitance Cre (pF) (Common emitter) Reverse transfer impedance Zrb (Ω) 0 Collector current IC (mA) 80 0 −10−1 160 300 Zrb IE 100 120 VCE = 6 V Collector current IC (mA) 120 80 1 200 0 10−1 102 10 10 hFE IC 10 10−2 10−1 40 360 IC / IB = 10 Forward current transfer ratio hFE Collector-emitter saturation voltage VCE(sat) (V) VCE(sat) IC 10−1 15 Base current IB (µA) Collector-emitter voltage VCE (V) 102 20 0 0 102 (V) Collector output capacitance C (pF) (Common base, input open circuited) ob 0 −25°C Ta = 75°C 5 2 2 0 25 Collector current IC (mA) Collector current IC (mA) Collector current IC (mA) 60 µA 6 4 25°C 10 80 µA 8 VCE = 6 V VCE = 6 V Ta = 25°C IB = 100 µA 10 IC VBE 30 12 Transition frequency fT (MHz) 12 1.2 f = 1 MHz IE = 0 Ta = 25°C 1.0 0.8 0.6 0.4 0.2 0 0 5 10 15 20 25 30 Collector-base voltage VCB (V) 3 XP04683 GP I E NF IE 40 f = 100 MHz Rg = 50 Ω Ta = 25°C 30 VCE = 10 V 25 6V 20 15 f = 100 MHz Rg = 50 Ω Ta = 25°C 10 Noise figure NF (dB) 35 Power gain GP (dB) 12 8 6 VCE = 6 V, 10 V 4 10 2 5 0 −10−1 −1 −10 0 −10−1 −102 Emitter current IE (mA) −1 −10 −102 Emitter current IE (mA) Characteristics charts of Tr2 IC VCE IC I B Ta = 25°C −150 µA −20 −100 µA −10 0 −4 −8 −12 −250 −30 −200 −150 −20 −100 −10 −50 µA 0 −300 −40 0 −16 −50 0 Collector-emitter voltage VCE (V) Collector current IC (mA) −25°C −160 −120 −80 0 − 0.4 − 0.8 −1.2 − 0.4 0 −10 −1.6 Base-emitter voltage VBE (V) −2.0 −10−3 −1 Ta = 75°C 25°C −25°C −10 −102 Collector current IC (mA) SJJ00189BED −1.2 −1.6 hFE IC 600 IC / IB = 10 −1 − 0.8 Base-emitter voltage VBE (V) −10−2 0 0 −400 −10−1 −40 4 Collector-emitter saturation voltage VCE(sat) (V) 25°C Ta = 75°C −300 VCE(sat) IC VCE = −5 V −200 −200 Base current IB (µA) IC VBE −240 −100 −103 Forward current transfer ratio hFE −30 Collector current IC (mA) Collector current IC (mA) −200 µA VCE = −5 V Ta = 25°C −350 −50 −250 µA −40 −400 VCE = −5 V Ta = 25°C IB = −300 µA −50 IB VBE −60 Base current IB (µA) −60 VCE = –10 V 500 400 300 Ta = 75°C 25°C −25°C 200 100 0 −1 −10 −102 Collector current IC (mA) −1 03 XP04683 Transition frequency fT (MHz) 140 Cob VCB Collector output capacitance C (pF) (Common base, input open circuited) ob fT I E 160 VCB = −10 V Ta = 25°C 120 100 80 60 40 20 0 10−1 1 10 Emitter current IE (mA) 102 8 f = 1 MHz IE = 0 Ta = 25°C 7 6 5 4 3 2 1 0 −1 −10 −102 Collector-base voltage VCB (V) SJJ00189BED 5 Request for your special attention and precautions in using the technical information and semiconductors described in this material (1) An export permit needs to be obtained from the competent authorities of the Japanese Government if any of the products or technical information described in this material and controlled under the "Foreign Exchange and Foreign Trade Law" is to be exported or taken out of Japan. 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