Transistors 2SA1806J Silicon PNP epitaxial planar type 1.60+0.05 –0.03 1.00±0.05 ■ Features Unit: mm 0.80±0.05 For high speed switching 0.12+0.03 –0.01 0 to 0.02 (0.50)(0.50) ■ Absolute Maximum Ratings Ta = 25°C Symbol Rating Unit Collector-base voltage (Emitter open) VCBO −15 V Collector-emitter voltage (Base open) VCEO −15 V Emitter-base voltage (Collector open) VEBO −4 V Collector current IC −50 mA Peak collector current ICP −100 mA Collector power dissipation PC 125 mW Junction temperature Tj 125 °C Storage temperature Tstg −55 to +125 °C (0.375) 0.10 max. 5˚ Parameter 1.60±0.05 2 (0.80) 1 0.27±0.02 0.70+0.05 –0.03 • High speed switching • Low collector-emitter saturation voltage VCE(sat) • SS-Mini type package, allowing downsizing of the equipment and automatic insertion through the tape packing 5˚ 0.85+0.05 –0.03 3 1: Base 2: Emitter 3: Collector EIAJ: SC-89 SSMini3-F1 Package Marking Symbol: AK ■ Electrical Characteristics Ta = 25°C ± 3°C Parameter Symbol Collector-base cutoff current (Emitter open) ICBO Emitter-base cutoff current (Collector open) IEBO Forward current transfer ratio Min Max Unit VCB = −8 V, IE = 0 − 0.1 µA VCE = −3 V, IC = 0 − 0.1 µA 150 VCE = −1 V, IC = −10 mA 50 hFE2 VCE = −1 V, IC = −1 mA 30 VCE(sat) IC = −10 mA, IB = −1 mA hFE1 Collector-emitter saturation voltage Conditions Transition frequency * VCB = −10 V, IE = 10 mA, f = 200 MHz fT Typ − 0.1 800 − 0.2 V 1 500 MHz Cob VCB = −5 V, IE = 0, f = 1 MHz 1 pF Turn-on time ton Refer to the switching time 12 ns Turn-off time toff measurement circuit 20 ns Storage time tstg 19 ns Collector output capacitance (Common base, input open circuited) Note) 1. Measuring methods are based on JAPANESE INDUSTRIAL STANDARD JIS C 7030 measuring methods for transistors. 2. *: Rank classification Rank Q R hFE1 50 to 120 90 to 150 Ranking is not given for any product. Publication date: August 2003 SJC00300AED 1 2SA1806J Switching time measurement circuit ton , toff Test circuit 52 Ω 508 Ω 0.1 µF VIN 51 Ω VIN 0 34 Ω 51 Ω 10% VIN 90% 90% VOUT ton 0 90% 90% VOUT 10% VIN = 9.8 V VBB = −8.0 V −400 µA −50 −300 µA −40 −200 µA −30 −100 µA −10 0 −2 −4 −6 −8 −10 Collector-emitter voltage VCE −12 Collector-emitter saturation voltage VCE(sat) (V) Collector current IC (mA) −500 µA −20 −10 Ta = 75°C 100 25°C − 0.01 −1 −10 Ta = 75°C 25°C −25°C 60 40 20 −1 −10 Collector current IC (mA) 2 −100 −1 000 Collector current IC (mA) Cob VCB VCE = −1 V 80 0 − 0.1 −25°C − 0.1 (V) 140 120 20 0 20 40 60 80 100 120 140 VBE(sat) IC −1.0 −100 Collector output capacitance C (pF) (Common base, input open circuited) ob Forward current transfer ratio hFE 160 40 0 IC / IB = 10 hFE IC 180 60 VCE(sat) IC IB = −600 µA −60 80 Ambient temperature Ta (°C) Ta = 25°C −70 100 VIN = 9.0 V IC VCE −80 120 tstg toff VIN = −5.8 V VBB = Ground 0 30 Ω VOUT 10 f = 1 MHz Ta = 25°C 1 0.1 0 2 4 6 8 10 12 14 16 18 Collector-base voltage VCB (V) SJC00300AED −10 Base-emitter saturation voltage VBE(sat) (V) 0.1 µF VBB = −10 V VCC = −3 V 62 Ω VOUT 2 kΩ 140 Collector power dissipation PC (mW) VCC = −1.5 V VBB VIN PC Ta tstg Test circuit −1 − 0.1 − 0.1 IC / IB = 10 Ta = −25°C 75°C 25°C −1 −10 −100 Collector current IC (mA) −1 000 Request for your special attention and precautions in using the technical information and semiconductors described in this material (1) An export permit needs to be obtained from the competent authorities of the Japanese Government if any of the products or technologies described in this material and controlled under the "Foreign Exchange and Foreign Trade Law" is to be exported or taken out of Japan. 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