ETC 2SA1806J

Transistors
2SA1806J
Silicon PNP epitaxial planar type
1.60+0.05
–0.03
1.00±0.05
■ Features
Unit: mm
0.80±0.05
For high speed switching
0.12+0.03
–0.01
0 to 0.02
(0.50)(0.50)
■ Absolute Maximum Ratings Ta = 25°C
Symbol
Rating
Unit
Collector-base voltage (Emitter open)
VCBO
−15
V
Collector-emitter voltage (Base open)
VCEO
−15
V
Emitter-base voltage (Collector open)
VEBO
−4
V
Collector current
IC
−50
mA
Peak collector current
ICP
−100
mA
Collector power dissipation
PC
125
mW
Junction temperature
Tj
125
°C
Storage temperature
Tstg
−55 to +125
°C
(0.375)
0.10 max.
5˚
Parameter
1.60±0.05
2
(0.80)
1
0.27±0.02
0.70+0.05
–0.03
• High speed switching
• Low collector-emitter saturation voltage VCE(sat)
• SS-Mini type package, allowing downsizing of the equipment and
automatic insertion through the tape packing
5˚
0.85+0.05
–0.03
3
1: Base
2: Emitter
3: Collector
EIAJ: SC-89
SSMini3-F1 Package
Marking Symbol: AK
■ Electrical Characteristics Ta = 25°C ± 3°C
Parameter
Symbol
Collector-base cutoff current (Emitter open)
ICBO
Emitter-base cutoff current (Collector open)
IEBO
Forward current transfer ratio
Min
Max
Unit
VCB = −8 V, IE = 0
− 0.1
µA
VCE = −3 V, IC = 0
− 0.1
µA
150

VCE = −1 V, IC = −10 mA
50
hFE2
VCE = −1 V, IC = −1 mA
30
VCE(sat)
IC = −10 mA, IB = −1 mA
hFE1
Collector-emitter saturation voltage
Conditions
Transition frequency
*
VCB = −10 V, IE = 10 mA, f = 200 MHz
fT
Typ
− 0.1
800
− 0.2
V
1 500
MHz
Cob
VCB = −5 V, IE = 0, f = 1 MHz
1
pF
Turn-on time
ton
Refer to the switching time
12
ns
Turn-off time
toff
measurement circuit
20
ns
Storage time
tstg
19
ns
Collector output capacitance
(Common base, input open circuited)
Note) 1. Measuring methods are based on JAPANESE INDUSTRIAL STANDARD JIS C 7030 measuring methods for transistors.
2. *: Rank classification
Rank
Q
R
hFE1
50 to 120
90 to 150
Ranking is not given for any product.
Publication date: August 2003
SJC00300AED
1
2SA1806J
Switching time measurement circuit
ton , toff Test circuit
52 Ω
508 Ω
0.1 µF
VIN
51 Ω
VIN
0
34 Ω
51 Ω
10%
VIN
90%
90%
VOUT
ton
0
90%
90%
VOUT
10%
VIN = 9.8 V
VBB = −8.0 V
−400 µA
−50
−300 µA
−40
−200 µA
−30
−100 µA
−10
0
−2
−4
−6
−8
−10
Collector-emitter voltage VCE
−12
Collector-emitter saturation voltage VCE(sat) (V)
Collector current IC (mA)
−500 µA
−20
−10
Ta = 75°C
100
25°C
− 0.01
−1
−10
Ta = 75°C
25°C
−25°C
60
40
20
−1
−10
Collector current IC (mA)
2
−100
−1 000
Collector current IC (mA)
Cob  VCB
VCE = −1 V
80
0
− 0.1
−25°C
− 0.1
(V)
140
120
20
0
20
40
60
80
100
120 140
VBE(sat)  IC
−1.0
−100
Collector output capacitance
C (pF)
(Common base, input open circuited) ob
Forward current transfer ratio hFE
160
40
0
IC / IB = 10
hFE  IC
180
60
VCE(sat)  IC
IB = −600 µA
−60
80
Ambient temperature Ta (°C)
Ta = 25°C
−70
100
VIN = 9.0 V
IC  VCE
−80
120
tstg
toff
VIN = −5.8 V
VBB = Ground
0
30 Ω
VOUT
10
f = 1 MHz
Ta = 25°C
1
0.1
0
2
4
6
8
10 12 14 16 18
Collector-base voltage VCB (V)
SJC00300AED
−10
Base-emitter saturation voltage VBE(sat) (V)
0.1 µF
VBB = −10 V VCC = −3 V
62 Ω
VOUT
2 kΩ
140
Collector power dissipation PC (mW)
VCC = −1.5 V
VBB
VIN
PC  Ta
tstg Test circuit
−1
− 0.1
− 0.1
IC / IB = 10
Ta = −25°C
75°C
25°C
−1
−10
−100
Collector current IC (mA)
−1 000
Request for your special attention and precautions in using the technical information
and semiconductors described in this material
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if any of the products or technologies described in this material and controlled under the "Foreign
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product or technologies as described in this material.
(4) The products described in this material are intended to be used for standard applications or general
electronic equipment (such as office equipment, communications equipment, measuring instruments and household appliances).
Consult our sales staff in advance for information on the following applications:
• Special applications (such as for airplanes, aerospace, automobiles, traffic control equipment,
combustion equipment, life support systems and safety devices) in which exceptional quality and
reliability are required, or if the failure or malfunction of the products may directly jeopardize life or
harm the human body.
• Any applications other than the standard applications intended.
(5) The products and product specifications described in this material are subject to change without
notice for modification and/or improvement. At the final stage of your design, purchasing, or use of
the products, therefore, ask for the most up-to-date Product Standards in advance to make sure that
the latest specifications satisfy your requirements.
(6) When designing your equipment, comply with the guaranteed values, in particular those of maximum rating, the range of operating power supply voltage, and heat radiation characteristics. Otherwise, we will not be liable for any defect which may arise later in your equipment.
Even when the products are used within the guaranteed values, take into the consideration of
incidence of break down and failure mode, possible to occur to semiconductor products. Measures
on the systems such as redundant design, arresting the spread of fire or preventing glitch are
recommended in order to prevent physical injury, fire, social damages, for example, by using the
products.
(7) When using products for which damp-proof packing is required, observe the conditions (including
shelf life and amount of time let standing of unsealed items) agreed upon when specification sheets
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2002 JUL