PANASONIC UP04116

Composite Transistors
UP0411x Series
Silicon PNP epitaxial planar type
5˚
2
3
(0.50)(0.50)
1.00±0.05
1.60±0.05
(0.20)
1
(0.20)
4
■ Features
• Two elements incorporated into one package
(Transistors with built-in resistor)
• Reduction of the mounting area and assembly cost by one half
0.10±0.02
1.60±0.05
5
1.20±0.05
6
Unit: mm
0.20+0.05
–0.02
(0.30)
For switching/digital circuits
Display at No.1 lead
(R2)
10 kΩ
47 kΩ

5˚
1: Emitter (Tr1)
2: Base (Tr1)
3: Collector (Tr2)
■ Absolute Maximum Ratings Ta = 25°C
Parameter
Symbol
Rating
Unit
Collector-base voltage (Emitter open)
VCBO
−50
V
Collector-emitter voltage (Base open)
VCEO
−50
V
Collector current
IC
−100
mA
Total power dissipation
PT
125
mW
Junction temperature
Tj
125
°C
Storage temperature
Tstg
−55 to +125
°C
SJJ00001BED
4: Emitter (Tr2)
5: Base (Tr2)
6: Collector (Tr1)
SSMini6-F1 Package
Internal Connection
6
Tr1
5
R1
4
R2
R2
1
Publication date: December 2003
0.10 max.
Marking Symbol (R1)
9U
10 kΩ
6S
47 kΩ
6U
4.7 kΩ
0 to 0.02
• UP04111
• UP04113
• UP04116
0.55±0.05
■ Resistance by Part Number
R1
2
Tr2
3
1
UP0411x Series
■ Electrical Characteristics Ta = 25°C ± 3°C
Parameter
Symbol
Collector-base voltage (Emitter open)
VCBO
IC = −10 µA, IE = 0
−50
Collector-emitter voltage (Base open)
VCEO
IC = −2 mA, IB = 0
−50
Collector-base cutoff current (Emitter open)
ICBO
VCB = −50 V, IE = 0
− 0.1
Collector-emitter cutoff current (Base open)
ICEO
VCE = −50 V, IB = 0
− 0.5
µA
Emitter-base cutoff current UP04111
IEBO
VEB = −6 V, IC = 0
− 0.5
mA
(Collector open)
Conditions
Max
V
− 0.1
− 0.01
UP04111
UP04113
hFE
VCE = −10 V, IC = −5 mA

35
160
VCE(sat)
460
IC = −10 mA, IB = − 0.3 mA
Output voltage high-level
VOH
VCC = −5 V, VB = − 0.5 V, RL = 1 kΩ
Output voltage low-level
VOL
VCC = −5 V, VB = −2.5 V, RL = 1 kΩ
V
− 0.2
V
+30%
kΩ
1.2

−4.9
V
−30%
R1
10
UP04113
47
UP04116
4.7
UP04111
− 0.25
VCC = −5 V, VB = −3.5 V, RL = 1 kΩ
UP04113
UP04111
µA
80
UP04116
Collector-emitter saturation voltage
Unit
V
UP04113
ratio
Resistance ratio
Typ
UP04116
Forward current transfer
Input resistance
Min
R1 / R 2
0.8
1.0
UP04113
Transition frequency
fT
VCB = −10 V, IE = 1 mA, f = 200 MHz
80
MHz
Note) Measuring methods are based on JAPANESE INDUSTRIAL STANDARD JIS C 7030 measuring methods for transistors.
2
SJJ00001BED
UP0411x Series
Common characteristics chart
PT  Ta
150
Total power dissipation PT (mW)
125
100
75
50
25
0
0
40
80
120
160
Ambient temperature Ta (°C)
Characteristics charts of UP04111
IB = −1.0 mA
Collector current IC (mA)
−120
− 0.9 mA
− 0.8 mA
− 0.7 mA
− 0.6 mA
−80
− 0.5 mA
− 0.4 mA
− 0.3 mA
−40
− 0.2 mA
− 0.1 mA
0
0
−2
−4
−6
−8
−10
−12
−10
25°C
−1
Ta = 75°C
−10−1
−25°C
−10−2
−10−3
−1
−10
Cob  VCB
10
1
− 10
−20
80
−25°C
40
0
− 0.1
−1 000
−30
Collector-base voltage VCB (V)
−102
−10
− 1.4
−1.6
−1.8
Input voltage VIN (V)
SJJ00001BED
−100
−1 000
VIN  IO
−103
− 1.2
−10
−100
VO = −5 V
Ta = 25°C
−1
− 1.0
−1
Collector current IC (mA)
Input voltage VIN (V)
Output current IO (µA)
Collector output capacitance
C (pF)
(Common base, input open circuited) ob
−104
f = 1 MHz
Ta = 25°C
0
−100
Ta = 75°C
25°C
IO  VIN
100
0.1
VCE = −10 V
120
Collector current IC (mA)
Collector-emitter voltage VCE (V)
1 000
hFE  IC
IC / IB = 10
Forward current transfer ratio hFE
Ta = 25°C
VCE(sat)  IC
Collector-emitter saturation voltage VCE(sat) (V)
IC  VCE
−2.0
VO = − 0.2 V
Ta = 25°C
−10
−1
− 0.1
− 0.01
− 0.1
−1
−10
−100
Output current IO (mA)
3
UP0411x Series
Characteristics charts of UP04113
IB = −1.0 mA
Collector current IC (mA)
−120
− 0.9 mA
− 0.8 mA
− 0.7 mA
− 0.6 mA
− 0.5 mA
−80
− 0.4 mA
− 0.3 mA
− 0.2 mA
− 0.1 mA
0
−2
−4
−6
−8
−10
−12
Ta = 75°C
25°C
−25°C
− 0.01
−1
−10
−20
100
50
−30
−102
−1.2
−1.4
−1.6
−1.8
Input voltage VIN (V)
SJJ00001BED
−100
−1 000
VIN  IO
−100
VO = −5 V
Ta = 25°C
−103
−10
−1.0
−10
Collector current IC (mA)
Input voltage VIN (V)
Collector output capacitance
C (pF)
(Common base, input open circuited) ob
Output current IO (µA)
−10
Collector-base voltage VCB (V)
4
−104
f = 1 MHz
Ta = 25°C
0
150
IO  VIN
1
0.1
−25°C
0
−1
−100
25°C
200
Collector current IC (mA)
Cob  VCB
VCE = −10 V
Ta = 75°C
−1
Collector-emitter voltage VCE (V)
10
hFE  IC
250
VCE = −10 V
− 0.1
−40
0
−10
Forward current transfer ratio hFE
Ta = 25°C
VCE(sat)  IC
Collector-emitter saturation voltage VCE(sat) (V)
IC  VCE
−2.0
VO = − 0.2 V
Ta = 25°C
−10
−1
− 0.1
− 0.1
−1
−10
Output current IO (mA)
−100
UP0411x Series
Characteristics charts of UP04116
IC  VCE
VCE(sat)  IC
Collector current IC (mA)
− 0.9 mA
− 0.8 mA
− 0.7 mA
IB = −1.0 mA
− 0.6 mA
−120
− 0.5 mA
− 0.4 mA
− 0.3 mA
−80
− 0.2 mA
−40
− 0.1 mA
0
0
−2
−4
−6
−8
−10
−12
IC / IB = 10
−10
−1
Ta = 75°C
− 0.1
25°C
− 0.01
−1
10
1
− 10
−20
25°C
200
−100
−30
Collector-base voltage VCB (V)
− 1.2
−1.6
−2.0
Input voltage VIN (V)
SJJ00001BED
−100
−1 000
VIN  IO
VO = −5 V
Ta = 25°C
− 0.8
−10
Collector current IC (mA)
−10
−1
− 0.4
−25°C
100
0
−1
−1 000
−100
Input voltage VIN (V)
100
0
−100
Ta = 75°C
IO  VIN
f = 1 MHz
Ta = 25°C
Output current IO (mA)
Collector output capacitance
C (pF)
(Common base, input open circuited) ob
Cob  VCB
0.1
−25°C
−10
VCE = −10 V
300
Collector current IC (mA)
Collector-emitter voltage VCE (V)
1 000
hFE  IC
Forward current transfer ratio hFE
Ta = 25°C
−160
Collector-emitter saturation voltage VCE(sat) (V)
−100
−2.4
VO = − 0.2 V
Ta = 25°C
−10
−1
− 0.1
− 0.01
−1
−10
−100
Output current IO (mA)
5
Request for your special attention and precautions in using the technical information
and semiconductors described in this material
(1) An export permit needs to be obtained from the competent authorities of the Japanese Government if any of
the products or technical information described in this material and controlled under the "Foreign Exchange
and Foreign Trade Law" is to be exported or taken out of Japan.
(2) The technical information described in this material is limited to showing representative characteristics and
applied circuits examples of the products. It neither warrants non-infringement of intellectual property right
or any other rights owned by our company or a third party, nor grants any license.
(3) We are not liable for the infringement of rights owned by a third party arising out of the use of the technical
information as described in this material.
(4) The products described in this material are intended to be used for standard applications or general electronic equipment (such as office equipment, communications equipment, measuring instruments and household appliances).
Consult our sales staff in advance for information on the following applications:
• Special applications (such as for airplanes, aerospace, automobiles, traffic control equipment, combustion equipment, life support systems and safety devices) in which exceptional quality and reliability are
required, or if the failure or malfunction of the products may directly jeopardize life or harm the human
body.
• Any applications other than the standard applications intended.
(5) The products and product specifications described in this material are subject to change without notice for
modification and/or improvement. At the final stage of your design, purchasing, or use of the products,
therefore, ask for the most up-to-date Product Standards in advance to make sure that the latest specifications satisfy your requirements.
(6) When designing your equipment, comply with the guaranteed values, in particular those of maximum rating, the range of operating power supply voltage, and heat radiation characteristics. Otherwise, we will not
be liable for any defect which may arise later in your equipment.
Even when the products are used within the guaranteed values, take into the consideration of incidence of
break down and failure mode, possible to occur to semiconductor products. Measures on the systems such
as redundant design, arresting the spread of fire or preventing glitch are recommended in order to prevent
physical injury, fire, social damages, for example, by using the products.
(7) When using products for which damp-proof packing is required, observe the conditions (including shelf life
and amount of time let standing of unsealed items) agreed upon when specification sheets are individually
exchanged.
(8) This material may be not reprinted or reproduced whether wholly or partially, without the prior written
permission of Matsushita Electric Industrial Co., Ltd.
2003 SEP