Composite Transistors UP0411x Series Silicon PNP epitaxial planar type 5˚ 2 3 (0.50)(0.50) 1.00±0.05 1.60±0.05 (0.20) 1 (0.20) 4 ■ Features • Two elements incorporated into one package (Transistors with built-in resistor) • Reduction of the mounting area and assembly cost by one half 0.10±0.02 1.60±0.05 5 1.20±0.05 6 Unit: mm 0.20+0.05 –0.02 (0.30) For switching/digital circuits Display at No.1 lead (R2) 10 kΩ 47 kΩ 5˚ 1: Emitter (Tr1) 2: Base (Tr1) 3: Collector (Tr2) ■ Absolute Maximum Ratings Ta = 25°C Parameter Symbol Rating Unit Collector-base voltage (Emitter open) VCBO −50 V Collector-emitter voltage (Base open) VCEO −50 V Collector current IC −100 mA Total power dissipation PT 125 mW Junction temperature Tj 125 °C Storage temperature Tstg −55 to +125 °C SJJ00001BED 4: Emitter (Tr2) 5: Base (Tr2) 6: Collector (Tr1) SSMini6-F1 Package Internal Connection 6 Tr1 5 R1 4 R2 R2 1 Publication date: December 2003 0.10 max. Marking Symbol (R1) 9U 10 kΩ 6S 47 kΩ 6U 4.7 kΩ 0 to 0.02 • UP04111 • UP04113 • UP04116 0.55±0.05 ■ Resistance by Part Number R1 2 Tr2 3 1 UP0411x Series ■ Electrical Characteristics Ta = 25°C ± 3°C Parameter Symbol Collector-base voltage (Emitter open) VCBO IC = −10 µA, IE = 0 −50 Collector-emitter voltage (Base open) VCEO IC = −2 mA, IB = 0 −50 Collector-base cutoff current (Emitter open) ICBO VCB = −50 V, IE = 0 − 0.1 Collector-emitter cutoff current (Base open) ICEO VCE = −50 V, IB = 0 − 0.5 µA Emitter-base cutoff current UP04111 IEBO VEB = −6 V, IC = 0 − 0.5 mA (Collector open) Conditions Max V − 0.1 − 0.01 UP04111 UP04113 hFE VCE = −10 V, IC = −5 mA 35 160 VCE(sat) 460 IC = −10 mA, IB = − 0.3 mA Output voltage high-level VOH VCC = −5 V, VB = − 0.5 V, RL = 1 kΩ Output voltage low-level VOL VCC = −5 V, VB = −2.5 V, RL = 1 kΩ V − 0.2 V +30% kΩ 1.2 −4.9 V −30% R1 10 UP04113 47 UP04116 4.7 UP04111 − 0.25 VCC = −5 V, VB = −3.5 V, RL = 1 kΩ UP04113 UP04111 µA 80 UP04116 Collector-emitter saturation voltage Unit V UP04113 ratio Resistance ratio Typ UP04116 Forward current transfer Input resistance Min R1 / R 2 0.8 1.0 UP04113 Transition frequency fT VCB = −10 V, IE = 1 mA, f = 200 MHz 80 MHz Note) Measuring methods are based on JAPANESE INDUSTRIAL STANDARD JIS C 7030 measuring methods for transistors. 2 SJJ00001BED UP0411x Series Common characteristics chart PT Ta 150 Total power dissipation PT (mW) 125 100 75 50 25 0 0 40 80 120 160 Ambient temperature Ta (°C) Characteristics charts of UP04111 IB = −1.0 mA Collector current IC (mA) −120 − 0.9 mA − 0.8 mA − 0.7 mA − 0.6 mA −80 − 0.5 mA − 0.4 mA − 0.3 mA −40 − 0.2 mA − 0.1 mA 0 0 −2 −4 −6 −8 −10 −12 −10 25°C −1 Ta = 75°C −10−1 −25°C −10−2 −10−3 −1 −10 Cob VCB 10 1 − 10 −20 80 −25°C 40 0 − 0.1 −1 000 −30 Collector-base voltage VCB (V) −102 −10 − 1.4 −1.6 −1.8 Input voltage VIN (V) SJJ00001BED −100 −1 000 VIN IO −103 − 1.2 −10 −100 VO = −5 V Ta = 25°C −1 − 1.0 −1 Collector current IC (mA) Input voltage VIN (V) Output current IO (µA) Collector output capacitance C (pF) (Common base, input open circuited) ob −104 f = 1 MHz Ta = 25°C 0 −100 Ta = 75°C 25°C IO VIN 100 0.1 VCE = −10 V 120 Collector current IC (mA) Collector-emitter voltage VCE (V) 1 000 hFE IC IC / IB = 10 Forward current transfer ratio hFE Ta = 25°C VCE(sat) IC Collector-emitter saturation voltage VCE(sat) (V) IC VCE −2.0 VO = − 0.2 V Ta = 25°C −10 −1 − 0.1 − 0.01 − 0.1 −1 −10 −100 Output current IO (mA) 3 UP0411x Series Characteristics charts of UP04113 IB = −1.0 mA Collector current IC (mA) −120 − 0.9 mA − 0.8 mA − 0.7 mA − 0.6 mA − 0.5 mA −80 − 0.4 mA − 0.3 mA − 0.2 mA − 0.1 mA 0 −2 −4 −6 −8 −10 −12 Ta = 75°C 25°C −25°C − 0.01 −1 −10 −20 100 50 −30 −102 −1.2 −1.4 −1.6 −1.8 Input voltage VIN (V) SJJ00001BED −100 −1 000 VIN IO −100 VO = −5 V Ta = 25°C −103 −10 −1.0 −10 Collector current IC (mA) Input voltage VIN (V) Collector output capacitance C (pF) (Common base, input open circuited) ob Output current IO (µA) −10 Collector-base voltage VCB (V) 4 −104 f = 1 MHz Ta = 25°C 0 150 IO VIN 1 0.1 −25°C 0 −1 −100 25°C 200 Collector current IC (mA) Cob VCB VCE = −10 V Ta = 75°C −1 Collector-emitter voltage VCE (V) 10 hFE IC 250 VCE = −10 V − 0.1 −40 0 −10 Forward current transfer ratio hFE Ta = 25°C VCE(sat) IC Collector-emitter saturation voltage VCE(sat) (V) IC VCE −2.0 VO = − 0.2 V Ta = 25°C −10 −1 − 0.1 − 0.1 −1 −10 Output current IO (mA) −100 UP0411x Series Characteristics charts of UP04116 IC VCE VCE(sat) IC Collector current IC (mA) − 0.9 mA − 0.8 mA − 0.7 mA IB = −1.0 mA − 0.6 mA −120 − 0.5 mA − 0.4 mA − 0.3 mA −80 − 0.2 mA −40 − 0.1 mA 0 0 −2 −4 −6 −8 −10 −12 IC / IB = 10 −10 −1 Ta = 75°C − 0.1 25°C − 0.01 −1 10 1 − 10 −20 25°C 200 −100 −30 Collector-base voltage VCB (V) − 1.2 −1.6 −2.0 Input voltage VIN (V) SJJ00001BED −100 −1 000 VIN IO VO = −5 V Ta = 25°C − 0.8 −10 Collector current IC (mA) −10 −1 − 0.4 −25°C 100 0 −1 −1 000 −100 Input voltage VIN (V) 100 0 −100 Ta = 75°C IO VIN f = 1 MHz Ta = 25°C Output current IO (mA) Collector output capacitance C (pF) (Common base, input open circuited) ob Cob VCB 0.1 −25°C −10 VCE = −10 V 300 Collector current IC (mA) Collector-emitter voltage VCE (V) 1 000 hFE IC Forward current transfer ratio hFE Ta = 25°C −160 Collector-emitter saturation voltage VCE(sat) (V) −100 −2.4 VO = − 0.2 V Ta = 25°C −10 −1 − 0.1 − 0.01 −1 −10 −100 Output current IO (mA) 5 Request for your special attention and precautions in using the technical information and semiconductors described in this material (1) An export permit needs to be obtained from the competent authorities of the Japanese Government if any of the products or technical information described in this material and controlled under the "Foreign Exchange and Foreign Trade Law" is to be exported or taken out of Japan. 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