PANASONIC XN4110

Composite Transistors
XN04110 (XN4110)
Silicon PNP epitaxial planar type
Unit: mm
2.90+0.20
–0.05
1.9±0.1
(0.95) (0.95)
3
2
0.4±0.2
1
0.30+0.10
–0.05
0.50+0.10
–0.05
■ Basic Part Number
2.8+0.2
–0.3
6
(0.65)
• Two elements incorporated into one package
(Transistors with built-in resistor)
• Reduction of the mounting area and assembly cost by one half
5
1.50+0.25
–0.05
4
■ Features
5˚
For switching/digital circuits
0.16+0.10
–0.06
1.1+0.2
–0.1
Parameter
Symbol
Rating
Unit
Collector-base voltage (Emitter open)
VCBO
−50
V
Collector-emitter voltage (Base open)
VCEO
−50
V
Collector current
IC
−100
mA
Total power dissipation
PT
300
mW
Junction temperature
Tj
150
°C
Storage temperature
Tstg
−55 to +150
°C
1: Collector (Tr1)
2: Base (Tr2)
3: Emitter (Tr2)
EIAJ : SC-74
0 to 0.1
■ Absolute Maximum Ratings Ta = 25°C
1.1+0.3
–0.1
10˚
• UNR2110 (UN2110) × 2
4: Collector (Tr2)
5: Base (Tr1)
6: Emitter (Tr1)
Mini6-G1 Package
Marking Symbol: BI
Internal Connection
4
5
Tr2
3
■ Electrical Characteristics Ta = 25°C ± 3°C
2
Symbol
VCBO
IC = −10 µA, IE = 0
−50
Collector-emitter voltage (Base open)
VCEO
IC = −2 mA, IB = 0
−50
Collector-base cutoff current (Emitter open)
ICBO
VCB = −50 V, IE = 0
Collector-emitter cutoff current (Base open)
ICEO
VCE = −50 V, IB = 0
− 0.5
µA
Emitter-base cutoff current (Collector open)
IEBO
VEB = −6 V, IC = 0
− 0.01
mA
hFE
VCE = −10 V, IC = −5 mA
VCE(sat)
VOH
VCC = −5 V, VB = − 0.5 V, RL = 1 kΩ
Output voltage low-level
VOL
VCC = −5 V, VB = −2.5 V, RL = 1 kΩ
R1
Transition frequency
fT
Unit
V
− 0.1
160
µA
460

− 0.25
V
− 0.2
V
−4.9
−30%
VCB = −10 V, IE = 1 mA, f = 200 MHz
Max
V
IC = −10 mA, IB = − 0.3 mA
Output voltage high-level
Input resistance
Typ
1
Parameter
Collector-emitter saturation voltage
Min
Tr1
Collector-base voltage (Emitter open)
Forward current transfer ratio
Conditions
6
V
47
80
+30%
kΩ
MHz
Note) Measuring methods are based on JAPANESE INDUSTRIAL STANDARD JIS C 7030 measuring methods for transistors.
Note) The part number in the parenthesis shows conventional part number.
Publication date: June 2003
SJJ00226BED
1
XN04110
IC  VCE
Total power dissipation PT (mW)
IB = −1.0 mA
− 0.9 mA
− 0.8 mA
−120
− 0.7 mA
− 0.6 mA
−100
Collector current IC (mA)
400
300
200
Ta = 25°C
− 0.5 mA
− 0.4 mA
−80
− 0.3 mA
−60
− 0.2 mA
−40
− 0.1 mA
100
−20
0
0
40
80
120
0
160
0
300
Ta = 75°C
25°C
−25°C
100
−10
−6
−100
−1 000
Collector current IC (mA)
Input voltage VIN (V)
−12
1
0
−10
−20
−1
−1
−10
−100
−1 000
IO  VIN
−30
Collector-base voltage VCB (V)
VO = − 0.2 V
Ta = 25°C
−1
−10
25°C
−25°C
Collector current IC (mA)
−10
f = 1 MHz
Ta = 25°C
−10
− 0.1
−1
−10
10
VIN  IO
−100
−8
Ta = 75°C
−10
VO = −5 V
Ta = 25°C
Output current IO (mA)
Forward current transfer ratio hFE
VCE = –10 V
0
−1
−4
IC / IB = 10
Cob  VCB
Collector output capacitance
C (pF)
(Common base, input open circuited) ob
hFE  IC
400
200
−2
−100
Collector-emitter voltage VCE (V)
Ambient temperature Ta (°C)
−100
Output current IO (mA)
2
VCE(sat)  IC
−140
Collector-emitter saturation voltage VCE(sat) (V)
PT  Ta
500
SJJ00226BED
−40
−1
−0.4
−0.8
−1.2
−1.6
Input voltage VIN (V)
−2.0
Request for your special attention and precautions in using the technical information
and semiconductors described in this material
(1) An export permit needs to be obtained from the competent authorities of the Japanese Government
if any of the products or technologies described in this material and controlled under the "Foreign
Exchange and Foreign Trade Law" is to be exported or taken out of Japan.
(2) The technical information described in this material is limited to showing representative characteristics and applied circuits examples of the products. It neither warrants non-infringement of intellectual property right or any other rights owned by our company or a third party, nor grants any license.
(3) We are not liable for the infringement of rights owned by a third party arising out of the use of the
product or technologies as described in this material.
(4) The products described in this material are intended to be used for standard applications or general
electronic equipment (such as office equipment, communications equipment, measuring instruments and household appliances).
Consult our sales staff in advance for information on the following applications:
• Special applications (such as for airplanes, aerospace, automobiles, traffic control equipment,
combustion equipment, life support systems and safety devices) in which exceptional quality and
reliability are required, or if the failure or malfunction of the products may directly jeopardize life or
harm the human body.
• Any applications other than the standard applications intended.
(5) The products and product specifications described in this material are subject to change without
notice for modification and/or improvement. At the final stage of your design, purchasing, or use of
the products, therefore, ask for the most up-to-date Product Standards in advance to make sure that
the latest specifications satisfy your requirements.
(6) When designing your equipment, comply with the guaranteed values, in particular those of maximum rating, the range of operating power supply voltage, and heat radiation characteristics. Otherwise, we will not be liable for any defect which may arise later in your equipment.
Even when the products are used within the guaranteed values, take into the consideration of
incidence of break down and failure mode, possible to occur to semiconductor products. Measures
on the systems such as redundant design, arresting the spread of fire or preventing glitch are
recommended in order to prevent physical injury, fire, social damages, for example, by using the
products.
(7) When using products for which damp-proof packing is required, observe the conditions (including
shelf life and amount of time let standing of unsealed items) agreed upon when specification sheets
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permission of Matsushita Electric Industrial Co., Ltd.
2002 JUL