Composite Transistors XN04110 (XN4110) Silicon PNP epitaxial planar type Unit: mm 2.90+0.20 –0.05 1.9±0.1 (0.95) (0.95) 3 2 0.4±0.2 1 0.30+0.10 –0.05 0.50+0.10 –0.05 ■ Basic Part Number 2.8+0.2 –0.3 6 (0.65) • Two elements incorporated into one package (Transistors with built-in resistor) • Reduction of the mounting area and assembly cost by one half 5 1.50+0.25 –0.05 4 ■ Features 5˚ For switching/digital circuits 0.16+0.10 –0.06 1.1+0.2 –0.1 Parameter Symbol Rating Unit Collector-base voltage (Emitter open) VCBO −50 V Collector-emitter voltage (Base open) VCEO −50 V Collector current IC −100 mA Total power dissipation PT 300 mW Junction temperature Tj 150 °C Storage temperature Tstg −55 to +150 °C 1: Collector (Tr1) 2: Base (Tr2) 3: Emitter (Tr2) EIAJ : SC-74 0 to 0.1 ■ Absolute Maximum Ratings Ta = 25°C 1.1+0.3 –0.1 10˚ • UNR2110 (UN2110) × 2 4: Collector (Tr2) 5: Base (Tr1) 6: Emitter (Tr1) Mini6-G1 Package Marking Symbol: BI Internal Connection 4 5 Tr2 3 ■ Electrical Characteristics Ta = 25°C ± 3°C 2 Symbol VCBO IC = −10 µA, IE = 0 −50 Collector-emitter voltage (Base open) VCEO IC = −2 mA, IB = 0 −50 Collector-base cutoff current (Emitter open) ICBO VCB = −50 V, IE = 0 Collector-emitter cutoff current (Base open) ICEO VCE = −50 V, IB = 0 − 0.5 µA Emitter-base cutoff current (Collector open) IEBO VEB = −6 V, IC = 0 − 0.01 mA hFE VCE = −10 V, IC = −5 mA VCE(sat) VOH VCC = −5 V, VB = − 0.5 V, RL = 1 kΩ Output voltage low-level VOL VCC = −5 V, VB = −2.5 V, RL = 1 kΩ R1 Transition frequency fT Unit V − 0.1 160 µA 460 − 0.25 V − 0.2 V −4.9 −30% VCB = −10 V, IE = 1 mA, f = 200 MHz Max V IC = −10 mA, IB = − 0.3 mA Output voltage high-level Input resistance Typ 1 Parameter Collector-emitter saturation voltage Min Tr1 Collector-base voltage (Emitter open) Forward current transfer ratio Conditions 6 V 47 80 +30% kΩ MHz Note) Measuring methods are based on JAPANESE INDUSTRIAL STANDARD JIS C 7030 measuring methods for transistors. Note) The part number in the parenthesis shows conventional part number. Publication date: June 2003 SJJ00226BED 1 XN04110 IC VCE Total power dissipation PT (mW) IB = −1.0 mA − 0.9 mA − 0.8 mA −120 − 0.7 mA − 0.6 mA −100 Collector current IC (mA) 400 300 200 Ta = 25°C − 0.5 mA − 0.4 mA −80 − 0.3 mA −60 − 0.2 mA −40 − 0.1 mA 100 −20 0 0 40 80 120 0 160 0 300 Ta = 75°C 25°C −25°C 100 −10 −6 −100 −1 000 Collector current IC (mA) Input voltage VIN (V) −12 1 0 −10 −20 −1 −1 −10 −100 −1 000 IO VIN −30 Collector-base voltage VCB (V) VO = − 0.2 V Ta = 25°C −1 −10 25°C −25°C Collector current IC (mA) −10 f = 1 MHz Ta = 25°C −10 − 0.1 −1 −10 10 VIN IO −100 −8 Ta = 75°C −10 VO = −5 V Ta = 25°C Output current IO (mA) Forward current transfer ratio hFE VCE = –10 V 0 −1 −4 IC / IB = 10 Cob VCB Collector output capacitance C (pF) (Common base, input open circuited) ob hFE IC 400 200 −2 −100 Collector-emitter voltage VCE (V) Ambient temperature Ta (°C) −100 Output current IO (mA) 2 VCE(sat) IC −140 Collector-emitter saturation voltage VCE(sat) (V) PT Ta 500 SJJ00226BED −40 −1 −0.4 −0.8 −1.2 −1.6 Input voltage VIN (V) −2.0 Request for your special attention and precautions in using the technical information and semiconductors described in this material (1) An export permit needs to be obtained from the competent authorities of the Japanese Government if any of the products or technologies described in this material and controlled under the "Foreign Exchange and Foreign Trade Law" is to be exported or taken out of Japan. (2) The technical information described in this material is limited to showing representative characteristics and applied circuits examples of the products. It neither warrants non-infringement of intellectual property right or any other rights owned by our company or a third party, nor grants any license. (3) We are not liable for the infringement of rights owned by a third party arising out of the use of the product or technologies as described in this material. (4) The products described in this material are intended to be used for standard applications or general electronic equipment (such as office equipment, communications equipment, measuring instruments and household appliances). Consult our sales staff in advance for information on the following applications: • Special applications (such as for airplanes, aerospace, automobiles, traffic control equipment, combustion equipment, life support systems and safety devices) in which exceptional quality and reliability are required, or if the failure or malfunction of the products may directly jeopardize life or harm the human body. • Any applications other than the standard applications intended. (5) The products and product specifications described in this material are subject to change without notice for modification and/or improvement. At the final stage of your design, purchasing, or use of the products, therefore, ask for the most up-to-date Product Standards in advance to make sure that the latest specifications satisfy your requirements. (6) When designing your equipment, comply with the guaranteed values, in particular those of maximum rating, the range of operating power supply voltage, and heat radiation characteristics. Otherwise, we will not be liable for any defect which may arise later in your equipment. Even when the products are used within the guaranteed values, take into the consideration of incidence of break down and failure mode, possible to occur to semiconductor products. Measures on the systems such as redundant design, arresting the spread of fire or preventing glitch are recommended in order to prevent physical injury, fire, social damages, for example, by using the products. (7) When using products for which damp-proof packing is required, observe the conditions (including shelf life and amount of time let standing of unsealed items) agreed upon when specification sheets are individually exchanged. (8) This material may be not reprinted or reproduced whether wholly or partially, without the prior written permission of Matsushita Electric Industrial Co., Ltd. 2002 JUL