Transistors 2SA2079 Silicon PNP epitaxial planar type For general amplification Complementary to 2SC5848 Unit: mm Features 3 2 0.60±0.05 High forward current transfer ratio hFE Suitable for high-density mounting and douwsizing of the equipment for ultraminiature leadless package Package: 0.6 mm × 1.0 mm (hight 0.39 mm) 1 Rating Unit Collector-base voltage (Emitter open) VCBO –45 V Collector-emitter voltage (Base open) VCEO –45 V Emitter-base voltage (Collector open) VEBO –7 V Collector current IC –100 mA Peak collector current ICP –200 mA Collector power dissipation PC 100 mW Junction temperature Tj 125 °C Storage temperature Tstg –55 to +125 °C 0.25±0.05 1 0.50±0.05 Symbol 0.15±0.05 0.05±0.03 0.35±0.01 0.25±0.05 Absolute Maximum Ratings Ta = 25°C Parameter 0.39+0.01 −0.03 1.00±0.05 3 1: Base 2: Emitter 3: Collector 0.65±0.01 2 0.05±0.03 ML3-N2 Package Marking Symbol : 3D Electrical Characteristics Ta = 25°C±3°C Parameter Symbol Conditions Min Typ Max Unit Collector-base voltage (Emitter open) VCBO IC = –10 µA, IE = 0 –45 V Collector-emitter voltage (Base open) VCEO IC = –2 mA, IB = 0 –45 V Emitter-base voltage (Collector open) VEBO IE = –10 µA, IC = 0 –7 V Collector-base cutoff current (Emitter open) ICBO VCB = –20 V, IE = 0 – 0.1 µA Collector-emitter cut-off current (Base open) ICEO VCE = –10 V, IB = 0 –100 µA Forward current transfer ratio hFE VCE = –10 V, IC = –2 mA 390 – 0.5 V Collector-emitter saturation voltage VCE(sat) IC = –100 mA, IB = –10 mA 180 – 0.2 Transition frequency fT VCB = –10 V, IE = 1 mA, f = 200 MHz 80 MHz Collector output capacitance (Common base, input open circuited) Cob VCB = –10 V, IE = 0, f = 1 MHz 2.2 pF Note) Measuring methods are based on JAPANESE INDUSTRIAL STANDARD JIS C 7030 measuring methods for transistors. Publication date : December 2004 SJC00326AED 1 2SA2079 2SA2162_ PC-Ta 100 −50 80 60 40 20 Ta = 25°C −250 µA −40 −200 µA −30 −150 µA −20 −100 µA −10 20 60 40 80 0 100 120 140 0 −2 VCE = −10 V Ta = 25°C −1.5 −1.0 Ta = 75°C −80 −25°C −60 25°C −40 −20 − 0.4 − 0.6 0 − 0.8 0 − 0.2 − 0.4 − 0.6 − 0.8 −1.0 −1.2 Base-emitter voltage VBE (V) Base-emitter voltage VBE (V) 2SA2079_Cob-VCB 2SA2079_hFE-IC 300 250 Ta = 75°C Cob VCB VCE = −10 V 25°C 200 −25°C 150 100 50 0 −1 −10 −100 Collector current IC (mA) −1000 Collector output capacitance C (pF) (Common base, input open circuited) ob hFE IC 10 1 f = 1 MHz Ta = 25°C 0 −8 −16 −24 −32 −40 Collector-base voltage VCB (V) SJC00326AED − 0.2 − 0.4 − 0.6 − 0.8 −1.0 −1.2 Base current IB (mA) VCE(sat) IC VCE = −10 V −2.0 − 0.2 0 2SA2079_VCE(sat)-IC −100 0 0 −12 (V) −120 Collector current IC (mA) Base current IB (mA) −10 −40 IC VBE −2.5 Forward current transfer ratio hFE −8 −60 2SA2079_IC-VBE − 0.5 2 −6 Collector-emitter voltage VCE IB VBE −3.0 −4 −80 −20 −50 µA 2SA2079_IB-VBE −3.5 −100 Collector-emitter saturation voltage VCE(sat) (V) 0 VCE = −10 V Ta = 25°C −120 Ta = −300 µA Ambient temperature Ta (°C) 0 IC IB −140 Collector current IC (mA) −60 Collector current IC (mA) Collector power dissipation PC (mW) IC VCE 120 0 2SA2079_IC-IB 2SA2079_IC-VCE PC Ta −1 IC / IB = 10 V Ta = 75°C − 0.1 −25°C 25°C − 0.01 −1 −10 −100 Collector current IC (mA) Request for your special attention and precautions in using the technical information and semiconductors described in this material (1) An export permit needs to be obtained from the competent authorities of the Japanese Government if any of the products or technical information described in this material and controlled under the "Foreign Exchange and Foreign Trade Law" is to be exported or taken out of Japan. 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