REVISIONS LTR DESCRIPTION DATE (YR-MO-DA) APPROVED 91-10-08 M. A. FRYE 94-06-29 M. A. FRYE Add outline letter “H”. Power dissipation = 935 mW, derate at 6.6 mW/C above TA = +25C. Lead temperature for outline letter H with soldering at 10 seconds is +265C. Add case outline H terminal connections to figure 1. Changes in accordance with N.O.R. 5962-R001-92. A Table I. Input resistance test, RIN; add test conditions “Untested input = 0 V, B VI = 12 V and -7 V, guaranteed by “line input current”.” Changes in accordance with N.O.R. 5962-R222-94. C Add case outline X. Change format for device classes Q and V. Changes to 1.3, 1.4, and table. Redrawn. - drw 98-07-09 R. MONNIN D Add radiation hardened information. - drw 99-02-01 R. MONNIN E Make change to 3.2.4. Delete figure 1 and figure 4. Add new footnote five to table I. - ro 01-04-20 R. MONNIN F Add paragraph 3.1.1 and Appendix A for microcircuit die. Delete footnote 3/ from paragraph 1.5 and footnote 2/ from Table I. Delete paragraphs 4.4.4.1.1 and 4.4.4.2. - ro 11-03-22 C. SAFFLE THE ORIGINAL FIRST SHEET OF THIS DRAWING HAS BEEN REPLACED. REV SHEET REV F F F F F F F F F F SHEET 15 16 17 18 19 20 21 22 23 24 REV STATUS REV F F F F F F F F F F F F F F OF SHEETS SHEET 1 2 3 4 5 6 7 8 9 10 11 12 13 14 PMIC N/A PREPARED BY RICK C. OFFICER STANDARD MICROCIRCUIT DRAWING DLA LAND AND MARITIME COLUMBUS, OHIO 43218-3990 http://www.dscc.dla.mil CHECKED BY CHARLES E. BESORE APPROVED BY THIS DRAWING IS AVAILABLE FOR USE BY ALL DEPARTMENTS AND AGENCIES OF THE DEPARTMENT OF DEFENSE AMSC N/A MICHAEL A. FRYE DRAWING APPROVAL DATE 90-10-18 REVISION LEVEL F MICROCIRCUIT, LINEAR, RS-485 DIFFERENTIAL BUS TRANSCEIVER, MONOLITHIC SILICON SIZE CAGE CODE A 67268 SHEET DSCC FORM 2233 APR 97 5962-89615 1 OF 24 5962-E215-11 1. SCOPE 1.1 Scope. This drawing documents two product assurance class levels consisting of high reliability (device classes Q and M) and space application (device class V). A choice of case outlines and lead finishes are available and are reflected in the Part or Identifying Number (PIN). When available, a choice of Radiation Hardness Assurance (RHA) levels is reflected in the PIN. 1.2 PIN. The PIN is as shown in the following examples. For device classes M and Q: 5962 - Federal stock class designator \ RHA designator (see 1.2.1) 89615 01 P A Device type (see 1.2.2) Case outline (see 1.2.4) Lead finish (see 1.2.5) / \/ Drawing number For device class V: 5962 F Federal stock class designator \ RHA designator (see 1.2.1) 01 V X A Device type (see 1.2.2) Device class designator (see 1.2.3) Case outline (see 1.2.4) Lead finish (see 1.2.5) 89615 / \/ Drawing number 1.2.1 RHA designator. Device classes Q and V RHA marked devices meet the MIL-PRF-38535 specified RHA levels and are marked with the appropriate RHA designator. Device class M RHA marked devices meet the MIL-PRF-38535, appendix A specified RHA levels and are marked with the appropriate RHA designator. A dash (-) indicates a non-RHA device. 1.2.2 Device type(s). The device type(s) identify the circuit function as follows: Device type Generic number 01 Circuit function DS16F95 RS-485 differential bus transceiver 1.2.3 Device class designator. The device class designator is a single letter identifying the product assurance level as listed below. Since the device class designator has been added after the original issuance of this drawing, device classes M and Q designators will not be included in the PIN and will not be marked on the device. Device requirements documentation Device class M Q or V Vendor self-certification to the requirements for MIL-STD-883 compliant, nonJAN class level B microcircuits in accordance with MIL-PRF-38535, appendix A Certification and qualification to MIL-PRF-38535 STANDARD MICROCIRCUIT DRAWING DLA LAND AND MARITIME COLUMBUS, OHIO 43218-3990 DSCC FORM 2234 APR 97 SIZE 5962-89615 A REVISION LEVEL F SHEET 2 1.2.4 Case outline(s). The case outline(s) are as designated in MIL-STD-1835 and as follows: Outline letter H P X 2 Descriptive designator GDFP1-F10 or CDFP2-F10 GDIP1-T8 or CDIP2-T8 GDFP1-G10 CQCC1-N20 Terminals Package style 10 8 10 20 Flat pack Dual-in-line Flat pack with gullwing leads Square leadless chip carrier 1.2.5 Lead finish. The lead finish is as specified in MIL-PRF-38535 for device classes Q and V or MIL-PRF-38535, appendix A for device class M. 1.3 Absolute maximum ratings. 1/ Supply voltage (VCC) ...................................................................................... Differential input voltage ................................................................................. Enable input voltage ....................................................................................... Lead temperature: Case P (soldering, 60 seconds) .................................................................. Case 2, H and X (soldering, 10 seconds) .................................................... Storage temperature ....................................................................................... Junction temperature (TJ) ............................................................................... Power dissipation (PD): 2/ Case P ........................................................................................................ Case 2 ......................................................................................................... Case H and X .............................................................................................. Thermal resistance, junction-to-case (JC): Case P ........................................................................................................ Case 2 ......................................................................................................... Case H and X .............................................................................................. Thermal resistance, junction-to-ambient (JA): Case P at 1 W ............................................................................................. Case 2 ......................................................................................................... Case H and X at 0.5 W ............................................................................... +7.0 V dc -10 V/+15 V dc 5.5 V dc +300C +260C -65C to +175C +175C 1274 mW 1800 mW 725 mW 14C/W 17C/W 18C/W 118C/W 83C/W 207C/W 1.4 Recommended operating conditions. Supply voltage range (VCC) ............................................................................ +4.5 V dc to +5.5 V dc Ambient operating temperature range (TA) .................................................... -55C to +125C Voltage at any bus terminal: (separately or common mode, VI or VCM) ................................................... -7.0 V to +12 V dc Differential input voltage (VID) ........................................................................ -7.0 V to +12 V dc Output current HIGH (IOH) : Driver .......................................................................................................... Receiver ...................................................................................................... Output current LOW (IOL) : Driver .......................................................................................................... Receiver ...................................................................................................... -60 mA -400 A 60 mA 16 mA ______ 1/ Stresses above the absolute maximum rating may cause permanent damage to the device. Extended operation at the maximum levels may degrade performance and affect reliability. 2/ Must withstand the added PD due to short circuit test, e.g., IOS. Derate above TA = +25C, 8.5 mW/C for case P, 12.1 mW/C for case 2, 4.8 mW/C for cases H and X. STANDARD MICROCIRCUIT DRAWING DLA LAND AND MARITIME COLUMBUS, OHIO 43218-3990 DSCC FORM 2234 APR 97 SIZE 5962-89615 A REVISION LEVEL F SHEET 3 1.5 Radiation features. Maximum total dose available (dose rate = 50 - 300 rads (Si)/s) .................... 300 krads(Si) 2. APPLICABLE DOCUMENTS 2.1 Government specification, standards, and handbooks. The following specification, standards, and handbooks form a part of this drawing to the extent specified herein. Unless otherwise specified, the issues of these documents are those cited in the solicitation or contract. DEPARTMENT OF DEFENSE SPECIFICATION MIL-PRF-38535 - Integrated Circuits, Manufacturing, General Specification for. DEPARTMENT OF DEFENSE STANDARDS MIL-STD-883 MIL-STD-1835 - Test Method Standard Microcircuits. Interface Standard Electronic Component Case Outlines. DEPARTMENT OF DEFENSE HANDBOOKS MIL-HDBK-103 MIL-HDBK-780 - List of Standard Microcircuit Drawings. Standard Microcircuit Drawings. (Copies of these documents are available online at https://assist.daps.dla.mil/quicksearch/ or from the Standardization Document Order Desk, 700 Robbins Avenue, Building 4D, Philadelphia, PA 19111-5094.) 2.2 Order of precedence. In the event of a conflict between the text of this drawing and the references cited herein, the text of this drawing takes precedence. Nothing in this document, however, supersedes applicable laws and regulations unless a specific exemption has been obtained. 3. REQUIREMENTS 3.1 Item requirements. The individual item requirements for device classes Q and V shall be in accordance with MIL-PRF-38535 and as specified herein or as modified in the device manufacturer's Quality Management (QM) plan. The modification in the QM plan shall not affect the form, fit, or function as described herein. The individual item requirements for device class M shall be in accordance with MIL-PRF-38535, appendix A for non-JAN class level B devices and as specified herein. 3.1.1 Microcircuit die. For the requirements of microcircuit die, see appendix A to this document. 3.2 Design, construction, and physical dimensions. The design, construction, and physical dimensions shall be as specified in MIL-PRF-38535 and herein for device classes Q and V or MIL-PRF-38535, appendix A and herein for device class M. 3.2.1 Case outline. The case outline shall be in accordance with 1.2.4 herein. 3.2.2 Terminal connections. The terminal connections shall be as specified on figure 1. 3.2.3 Truth tables. The truth tables shall be as specified on figure 2. 3.2.4 Radiation test circuit. The radiation test circuit shall be maintained by the manufacturer under document revision level control and shall be made available to the preparing and acquiring activity upon request. STANDARD MICROCIRCUIT DRAWING DLA LAND AND MARITIME COLUMBUS, OHIO 43218-3990 DSCC FORM 2234 APR 97 SIZE 5962-89615 A REVISION LEVEL F SHEET 4 3.3 Electrical performance characteristics and postirradiation parameter limits. Unless otherwise specified herein, the electrical performance characteristics and postirradiation parameter limits are as specified in table I and shall apply over the full ambient operating temperature range. 3.4 Electrical test requirements. The electrical test requirements shall be the subgroups specified in table II. The electrical tests for each subgroup are defined in table I. 3.5 Marking. The part shall be marked with the PIN listed in 1.2 herein. In addition, the manufacturer's PIN may also be marked. For packages where marking of the entire SMD PIN number is not feasible due to space limitations, the manufacturer has the option of not marking the "5962-" on the device. For RHA product using this option, the RHA designator shall still be marked. Marking for device classes Q and V shall be in accordance with MIL-PRF-38535. Marking for device class M shall be in accordance with MIL-PRF-38535, appendix A. 3.5.1 Certification/compliance mark. The certification mark for device classes Q and V shall be a "QML" or "Q" as required in MIL-PRF-38535. The compliance mark for device class M shall be a "C" as required in MIL-PRF-38535, appendix A. 3.6 Certificate of compliance. For device classes Q and V, a certificate of compliance shall be required from a QML-38535 listed manufacturer in order to supply to the requirements of this drawing (see 6.6.1 herein). For device class M, a certificate of compliance shall be required from a manufacturer in order to be listed as an approved source of supply in MIL-HDBK-103 (see 6.6.2 herein). The certificate of compliance submitted to DLA Land and Maritime-VA prior to listing as an approved source of supply for this drawing shall affirm that the manufacturer's product meets, for device classes Q and V, the requirements of MIL-PRF-38535 and herein or for device class M, the requirements of MIL-PRF-38535, appendix A and herein. 3.7 Certificate of conformance. A certificate of conformance as required for device classes Q and V in MIL-PRF-38535 or for device class M in MIL-PRF-38535, appendix A shall be provided with each lot of microcircuits delivered to this drawing. 3.8 Notification of change for device class M. For device class M, notification to DLA Land and Maritime-VA of change of product (see 6.2 herein) involving devices acquired to this drawing is required for any change that affects this drawing. 3.9 Verification and review for device class M. For device class M, DLA Land and Maritime, DLA Land and Maritime 's agent, and the acquiring activity retain the option to review the manufacturer's facility and applicable required documentation. Offshore documentation shall be made available onshore at the option of the reviewer. 3.10 Microcircuit group assignment for device class M. Device class M devices covered by this drawing shall be in microcircuit group number 53 (see MIL-PRF-38535, appendix A). STANDARD MICROCIRCUIT DRAWING DLA LAND AND MARITIME COLUMBUS, OHIO 43218-3990 DSCC FORM 2234 APR 97 SIZE 5962-89615 A REVISION LEVEL F SHEET 5 TABLE I. Electrical performance characteristics. Test Symbol Conditions 1/ -55C TA +125C Group A subgroups VCC = 5.5 V unless otherwise specified Limits Min Unit Max Electrical characteristics for driver. Differential output voltage VOD1 VCC = 5.5 V, IO = 0 A, VIN = 0.8 V M,D,P,L,R,F VCC = 5.5 V, IO = 0 A, VIN = 2.0 V M,D,P,L,R,F VOD2 VCC = 4.5 V, RL = 100 M,D,P,L,R,F VCC = 4.5 V, RL = 54 M,D,P,L,R,F VOD3 VCC = -7 V to 12 V M,D,P,L,R,F Change in differential 2/ output voltage VOD VCC = 4.5 V, RL = 100 M,D,P,L,R,F VCC = 4.5 V, RL = 54 M,D,P,L,R,F Change in common 2/ mode output voltage VOC VCC = 4.5 V, RL = 100 M,D,P,L,R,F VCC = 4.5 V, RL = 54 M,D,P,L,R,F 1, 2, 3 6 1 6 1, 2, 3 6 1 6 1, 2, 3 2 1 2 1, 2, 3 1.5 1 1.5 1, 2, 3 1 1 1 1, 2, 3 ±200 1 ±200 1,2,3 ±200 1 ±200 1, 2, 3 ±200 1 ±200 1,2,3 ±200 1 ±200 V mV mV See footnotes at end of table. STANDARD MICROCIRCUIT DRAWING DLA LAND AND MARITIME COLUMBUS, OHIO 43218-3990 DSCC FORM 2234 APR 97 SIZE 5962-89615 A REVISION LEVEL F SHEET 6 TABLE I. Electrical performance characteristics - continued. Test Symbol Conditions 1/ -55C TA +125C Group A subgroups VCC = 5.5 V unless otherwise specified Limits Min Unit Max Electrical characteristics for driver - continued. Common mode output voltage VOC RL = 100 M,D,P,L,R,F RL = 54 M,D,P,L,R,F Logical "1" input current IIH VI = 2.4 V M,D,P,L,R,F Output current IO Output disable, VOUT = 12 V M,D,P,L,R,F Output disable, VOUT = 12 V, VCC = 0 V M,D,P,L,R,F Output disable, VOUT = -7 V 3/ M,D,P,L,R,F Output disable, VOUT = -7 V, VCC = 0 V Output short circuit current IOS M,D,P,L,R,F VIN = 3 V, VOUT = VCC M,D,P,L,R,F VIN = 0 V, VOUT = VCC M,D,P,L,R,F VIN = 3 V, VOUT = -7 V 3/ M,D,P,L,R,F 1, 2, 3 3 1 3 1,2,3 3 1 3 1, 2, 3 20 1 20 1, 2, 3 1 1 1 1, 2, 3 1 1 1 1, 2, 3 -0.8 1 -0.8 1,2,3 -0.8 1 -0.8 1, 2, 3 150 1 150 1,2,3 150 1 150 1,2,3 -250 1 -250 V A mA mA See footnotes at end of table. STANDARD MICROCIRCUIT DRAWING DLA LAND AND MARITIME COLUMBUS, OHIO 43218-3990 DSCC FORM 2234 APR 97 SIZE 5962-89615 A REVISION LEVEL F SHEET 7 TABLE I. Electrical performance characteristics - continued. Test Symbol Conditions 1/ -55C TA +125C Group A subgroups VCC = 5.5 V unless otherwise specified Limits Min Unit Max Electrical characteristics for driver - continued. Output short circuit current IOS VIN = 0 V, VOUT = -7 V 3/ M,D,P,L,R,F VIN = 3 V, VOUT = 0 V 3/ M,D,P,L,R,F VIN = 0 V, VOUT = 0 V 3/ M,D,P,L,R,F VIN = 0 V, VOUT = 12 V M,D,P,L,R,F VIN = 3 V, VOUT = 12 V M,D,P,L,R,F Logical "1" output voltage VOH VCC = 4.5 V, IO = -20 mA M,D,P,L,R,F Logical "0" output voltage VOL VCC = 4.5 V, IO = 20 mA M,D,P,L,R,F 1, 2, 3 -250 1 -250 1, 2, 3 -150 1 -150 1, 2, 3 -150 1 -150 1, 2, 3 250 1 250 1, 2, 3 250 1 250 1, 2, 3 3 1 3 mA V 1, 2, 3 2 1 2 V Electrical characteristics for receiver. Logical "1" output voltage VOH VCC = 4.5 V, Vid = 200 mV, IOH = -400 A Logical "0" output voltage VOL M,D,P,L,R,F VCC = 4.5 V, Vid = -200 mV, IOL = 8 mA M,D,P,L,R,F VCC = 4.5 V, Vid = -200 mV, IOL = 16 mA M,D,P,L,R,F 1, 2, 3 2.5 1 2.5 V 1, 2, 3 0.45 1 0.45 1,2,3 0.5 1 0.5 V See footnotes at end of table. STANDARD MICROCIRCUIT DRAWING DLA LAND AND MARITIME COLUMBUS, OHIO 43218-3990 DSCC FORM 2234 APR 97 SIZE 5962-89615 A REVISION LEVEL F SHEET 8 TABLE I. Electrical performance characteristics - continued. Test Symbol Conditions 1/ -55C TA +125C Group A subgroups VCC = 5.5 V unless otherwise specified Limits Min Unit Max Electrical characteristics for receiver - continued. Line input current II Untested input = 0 V, VI = 12 V M,D,P,L,R,F Untested input = 0 V, VI = 12 V, VCC = 0 V M,D,P,L,R,F Untested input = 0 V, VI = -7 V 3/ M,D,P,L,R,F Untested input = 0 V, VI = -7 V 3/ VCC = 0 V Logical "1" input current IIH M,D,P,L,R,F VI = 2.7 V (receiver) M,D,P,L,R,F 1, 2, 3 1 1 1 1,2,3 1 1 1 1,2,3 -0.8 1 -0.8 1,2,3 -0.8 1 -0.8 1, 2, 3 20 1 20 mA A VCC = 0 V and 5.5 V, Input resistance RIN untested input = 0 V, VI = 12 V and -7 V, guaranteed by line input current M,D,P,L,R,F High impedance state output current IOZ Output short circuit current IOS VOUT = 0.4 V to 2.4 V M,D,P,L,R,F VIN = 1 V, VOUT = 0 V M,D,P,L,R,F 1, 2, 3 10 1 10 k 1, 2, 3 ±20 1 ±20 1, 2, 3 -85 -15 1 -85 -15 A mA See footnotes at end of table. STANDARD MICROCIRCUIT DRAWING DLA LAND AND MARITIME COLUMBUS, OHIO 43218-3990 DSCC FORM 2234 APR 97 SIZE 5962-89615 A REVISION LEVEL F SHEET 9 TABLE I. Electrical performance characteristics - continued. Test Symbol Conditions 1/ -55C TA +125C Group A subgroups VCC = 5 V unless otherwise specified Limits Min Unit Max Electrical characteristics for receiver - continued. Differential input high threshold voltage VTH VCC = 4.5 V, VOUT = 2.5 V, IO = -0.4 mA, VCM = 12 V, 0 V, and -7 V M,D,P,L,R,F VCC = 5.5 V, VOUT = 2.5 V, IO = -0.4 mA, VCM = 12 V, 0 V, and -7 V Differential input low threshold voltage VTL M,D,P,L,R,F VCC = 4.5 V, VOUT = 0.5 V, IO = 8 mA, VCM = 12 V, 0 V, and –7 V M,D,P,L,R,F VCC = 5.5 V, VOUT = 0.5 V, IO = 8 mA, VCM = 12 V, 0 V, and –7 V Hysteresis VTH+ M,D,P,L,R,F VCC = 4.5 V, VCM = 0 V M,D,P,L,R,F - (VTH-) VCC = 5.5 V, VCM = 0 V M,D,P,L,R,F 1, 2, 3 0.2 1 0.2 1,2,3 0.2 1 0.2 1, 2, 3 -0.2 1 -0.2 1,2,3 -0.2 1 -0.2 1, 2, 3 35 1 35 1,2,3 35 1 35 V V mV Electrical characteristics for both driver and receiver. Supply current ICC both disable ICC Supply current ICC both enable ICC RE = 2 V, DE = 0.8 V M,D,P,L,R,F RE = 0.8 V, DE = 2 V M,D,P,L,R,F 1, 2, 3 25 1 25 1, 2, 3 28 1 28 mA mA See footnotes at end of table. STANDARD MICROCIRCUIT DRAWING DLA LAND AND MARITIME COLUMBUS, OHIO 43218-3990 DSCC FORM 2234 APR 97 SIZE 5962-89615 A REVISION LEVEL F SHEET 10 TABLE I. Electrical performance characteristics - continued. Test Symbol Conditions 1/ -55C TA +125C Group A subgroups VCC = 5 V unless otherwise specified Limits Min Unit Max Electrical characteristics for both driver and receiver – continued. Input clamp voltage VIC II = -18 mA M,D,P,L,R,F Logical "1" input voltage VIH M,D,P,L,R,F Logical “0” input voltage VIL M,D,P,L,R,F Logical "1" enable input voltage VIH Logical “0” enable input voltage VIL Logical “0” input current IIL M,D,P,L,R,F M,D,P,L,R,F VI = 0.4 V 3/ M,D,P,L,R,F 1, 2, 3 -1.3 1 -1.3 1, 2, 3 2 1 2 V 1, 2, 3 0.8 1 0.8 1, 2, 3 2 1 2 V V V 1, 2, 3 0.8 1 0.8 1, 2, 3 -50 1 -50 V A Timing characteristics of driver. 4/ Differential output delay time tdd Differential output transition time tTD Propagation delay time low to high tPLH RL = 60 5/ RL = 60 5/ 6/ RL = 27 9 8 25 10, 11 8 30 9 8 25 10, 11 8 30 9 6 18 10, 11 6 25 ns ns ns See footnotes at end of table. STANDARD MICROCIRCUIT DRAWING DLA LAND AND MARITIME COLUMBUS, OHIO 43218-3990 DSCC FORM 2234 APR 97 SIZE 5962-89615 A REVISION LEVEL F SHEET 11 TABLE I. Electrical performance characteristics - continued. Test Symbol Conditions 1/ -55C TA +125C Group A subgroups Limits VCC = 5 V unless otherwise specified Unit Min Max 9 6 18 10, 11 6 25 Timing characteristics of driver – continued. 4/ Propagation delay time high to low tPHL Output enable time to high tPZH Output enable time to low tPZL Output disable time from high tPHZ Output disable time from low tPLZ Differential output skew time tskew RL = 27 RL = 110 RL = 110 RL = 110 RL = 110 9 35 10, 11 45 9 40 10, 11 50 9 30 10, 11 40 9 30 10, 11 40 9 6 10, 11 12 ns ns ns ns ns ns Timing characteristics of receiver. 4/ Propagation delay time low to high tPLH Propagation delay time high to low tPHL Output enable time to high tPZH Output enable time to low tPZL CL = 15 pF CL = 15 pF CL = 15 pF CL = 15 pF 9 10 27 10, 11 10 38 9 10 27 10, 11 10 38 9 20 10,11 30 9 20 10, 11 30 ns ns ns ns See footnotes at end of table. STANDARD MICROCIRCUIT DRAWING DLA LAND AND MARITIME COLUMBUS, OHIO 43218-3990 DSCC FORM 2234 APR 97 SIZE 5962-89615 A REVISION LEVEL F SHEET 12 TABLE I. Electrical performance characteristics - continued. Test Symbol Conditions 1/ -55C TA +125C Group A subgroups Limits VCC = 5 V unless otherwise specified Min Unit Max Timing characteristics of receiver - continued. 4/ Output to output delay time Output disable time from high tPLH - 9 8 tPHL 10, 11 16 9 30 10, 11 40 9 20 10, 11 30 9 20 10, 11 30 tPHZ CL = 20 pF CL = 5 pF 7/ Output disable time from low tPLZ CL = 5 pF ns ns ns 1/ Devices supplied to this drawing will meet all levels M, D, P, L, R, F of irradiation. However, this device is only tested at the ‘F’ level. Pre and post irradiation values are identical unless otherwise specified in table I. When performing post irradiation electrical measurements for any RHA level, TA = +25C. 2/ VOD and VOC are the changes in magnitude of VOD and VOC. 3/ Negative sign of the limits indicates the direction of the current flow only. 4/ Unless otherwise specified, PRR = 1 MHz, Tr Tf 6 ns, VLO = 0 V, ZOUT = 50 , AMP = 3 V, and 50 % duty cycle. 5/ Rise time 20 percent to 80 percent, fall time 80 percent to 20 percent. 6/ tTD = (noninverting output rise time + inverting output fall time) / 2, (noninverting output fall time + inverting output rise time) / 2. 7/ Tested at 20 pF, guaranteed at 5 pF. STANDARD MICROCIRCUIT DRAWING DLA LAND AND MARITIME COLUMBUS, OHIO 43218-3990 DSCC FORM 2234 APR 97 SIZE 5962-89615 A REVISION LEVEL F SHEET 13 Device type 01 Case outlines H and X Terminal number P 2 Terminal number 1 R R NC 2 RE RE R 3 DE DE NC 4 D D NC 5 GND GND RE 6 A IN/OUT BUS PORT A IN/OUT BUS PORT NC 7 B IN/OUT BUS PORT B IN/OUT BUS PORT DE 8 NC VCC NC 9 NC --- NC 10 VCC --- D 11 --- --- NC 12 --- --- GND 13 --- --- NC 14 --- --- NC 15 --- --- A IN/OUT BUS PORT 16 --- --- NC 17 --- --- B IN/OUT BUS PORT 18 --- --- NC 19 --- --- NC 20 --- --- VCC NC = No connection FIGURE 1. Terminal connections. STANDARD MICROCIRCUIT DRAWING DLA LAND AND MARITIME COLUMBUS, OHIO 43218-3990 DSCC FORM 2234 APR 97 SIZE 5962-89615 A REVISION LEVEL F SHEET 14 Differential input D Enable DE H Outputs A B H H L L H L H X L Z Z Differential inputs A-B Enable RE Output R VID 0.2 V L H VID -0.2 V L L X H Z H = High L = Low X = Don’t care Z = High impedance FIGURE 2. Truth table. STANDARD MICROCIRCUIT DRAWING DLA LAND AND MARITIME COLUMBUS, OHIO 43218-3990 DSCC FORM 2234 APR 97 SIZE 5962-89615 A REVISION LEVEL F SHEET 15 4. VERIFICATION 4.1 Sampling and inspection. For device classes Q and V, sampling and inspection procedures shall be in accordance with MIL-PRF-38535 or as modified in the device manufacturer's Quality Management (QM) plan. The modification in the QM plan shall not affect the form, fit, or function as described herein. For device class M, sampling and inspection procedures shall be in accordance with MIL-PRF-38535, appendix A. 4.2 Screening. For device classes Q and V, screening shall be in accordance with MIL-PRF-38535, and shall be conducted on all devices prior to qualification and technology conformance inspection. For device class M, screening shall be in accordance with method 5004 of MIL-STD-883, and shall be conducted on all devices prior to quality conformance inspection. 4.2.1 Additional criteria for device class M. a. Burn-in test, method 1015 of MIL-STD-883. (1) Test condition C. The test circuit shall be maintained by the manufacturer under document revision level control and shall be made available to the preparing or acquiring activity upon request. The test circuit shall specify the inputs, outputs, biases, and power dissipation, as applicable, in accordance with the intent specified in method 1015. (2) TA = +125C, minimum. b. Interim and final electrical test parameters shall be as specified in table II herein. 4.2.2 Additional criteria for device classes Q and V. a. The burn-in test duration, test condition and test temperature, or approved alternatives shall be as specified in the device manufacturer's QM plan in accordance with MIL-PRF-38535. The burn-in test circuit shall be maintained under document revision level control of the device manufacturer's Technology Review Board (TRB) in accordance with MIL-PRF-38535 and shall be made available to the acquiring or preparing activity upon request. The test circuit shall specify the inputs, outputs, biases, and power dissipation, as applicable, in accordance with the intent specified in method 1015 of MIL-STD-883. b. Interim and final electrical test parameters shall be as specified in table II herein. c. Additional screening for device class V beyond the requirements of device class Q shall be as specified in MIL-PRF-38535, appendix B. 4.3 Qualification inspection for device classes Q and V. Qualification inspection for device classes Q and V shall be in accordance with MIL-PRF-38535. Inspections to be performed shall be those specified in MIL-PRF-38535 and herein for groups A, B, C, D, and E inspections (see 4.4.1 through 4.4.4). 4.4 Conformance inspection. Technology conformance inspection for classes Q and V shall be in accordance with MIL-PRF-38535 including groups A, B, C, D, and E inspections and as specified. Quality conformance inspection for device class M shall be in accordance with MIL-PRF-38535, appendix A and as specified herein. Inspections to be performed for device class M shall be those specified in method 5005 of MIL-STD-883 and herein for groups A, B, C, D, and E inspections (see 4.4.1 through 4.4.4). 4.4.1 Group A inspection. a. Tests shall be as specified in table II herein. b. Subgroups 4, 5, 6, 7, and 8 in table I, method 5005 of MIL-STD-883 shall be omitted. STANDARD MICROCIRCUIT DRAWING DLA LAND AND MARITIME COLUMBUS, OHIO 43218-3990 DSCC FORM 2234 APR 97 SIZE 5962-89615 A REVISION LEVEL F SHEET 16 TABLE II. Electrical test requirements. Test requirements Interim electrical parameters (see 4.2) Final electrical parameters (see 4.2) Group A test requirements (see 4.4) Group C end-point electrical parameters (see 4.4) Group D end-point electrical parameters (see 4.4) Group E end-point electrical parameters (see 4.4) Subgroups (in accordance with MIL-PRF-38535, table III) Subgroups (in accordance with MIL-STD-883, method 5005, table I) Device class M 1 1 1 1,2,3 1/ 1,2,3 1/ 1,2,3 1/ 1,2,3,9,10,11 1,2,3,9,10,11 1,2,3,9,10,11 1,2,3 1,2,3 1,2,3 1,2,3 1,2,3 1,2,3 1 1 1 Device class Q Device class V 1/ PDA applies to subgroup 1. 4.4.2 Group C inspection. The group C inspection end-point electrical parameters shall be as specified in table II herein. 4.4.2.1 Additional criteria for device class M. Steady-state life test conditions, method 1005 of MIL-STD-883: a. Test condition C. The test circuit shall be maintained by the manufacturer under document revision level control and shall be made available to the preparing or acquiring activity upon request. The test circuit shall specify the inputs, outputs, biases, and power dissipation, as applicable, in accordance with the intent specified in method 1005 of MIL-STD-883. b. TA = +125C, minimum. c. Test duration: 1,000 hours, except as permitted by method 1005 of MIL-STD-883. 4.4.2.2 Additional criteria for device classes Q and V. The steady-state life test duration, test condition and test temperature, or approved alternatives shall be as specified in the device manufacturer's QM plan in accordance with MIL-PRF-38535. The test circuit shall be maintained under document revision level control by the device manufacturer's TRB in accordance with MIL-PRF-38535 and shall be made available to the acquiring or preparing activity upon request. The test circuit shall specify the inputs, outputs, biases, and power dissipation, as applicable, in accordance with the intent specified in method 1005 of MIL-STD-883. 4.4.3 Group D inspection. The group D inspection end-point electrical parameters shall be as specified in table II herein. STANDARD MICROCIRCUIT DRAWING DLA LAND AND MARITIME COLUMBUS, OHIO 43218-3990 DSCC FORM 2234 APR 97 SIZE 5962-89615 A REVISION LEVEL F SHEET 17 4.4.4 Group E inspection. Group E inspection is required only for parts intended to be marked as radiation hardness assured (see 3.5 herein). a. End-point electrical parameters shall be as specified in table II herein. b. For device classes Q and V, the devices or test vehicle shall be subjected to radiation hardness assured tests as specified in MIL-PRF-38535 for the RHA level being tested. For device class M, the devices shall be subjected to radiation hardness assured tests as specified in MIL-PRF-38535, appendix A for the RHA level being tested. All device classes must meet the postirradiation end-point electrical parameter limits as defined in table I at TA = +25C 5C, after exposure, to the subgroups specified in table II herein. 4.4.4.1 Total dose irradiation testing. Total dose irradiation testing shall be performed in accordance with MIL-STD-883 method 1019 condition A and as specified herein. 5. PACKAGING 5.1 Packaging requirements. The requirements for packaging shall be in accordance with MIL-PRF-38535 for device classes Q and V or MIL-PRF-38535, appendix A for device class M. 6. NOTES 6.1 Intended use. Microcircuits conforming to this drawing are intended for use for Government microcircuit applications (original equipment), design applications, and logistics purposes. 6.1.1 Replaceability. Microcircuits covered by this drawing will replace the same generic device covered by a contractorprepared specification or drawing. 6.2 Configuration control of SMD's. All proposed changes to existing SMD's will be coordinated with the users of record for the individual documents. This coordination will be accomplished using DD Form 1692, Engineering Change Proposal. 6.3 Record of users. Military and industrial users should inform DLA Land and Maritime when a system application requires configuration control and which SMD's are applicable to that system. DLA Land and Maritime will maintain a record of users and this list will be used for coordination and distribution of changes to the drawings. Users of drawings covering microelectronic devices (FSC 5962) should contact DLA Land and Maritime-VA, telephone (614) 692-0544. 6.4 Comments. Comments on this drawing should be directed to DLA Land and Maritime-VA, Columbus, Ohio 43218-3990, or telephone (614) 692-0540. 6.5 Abbreviations, symbols, and definitions. The abbreviations, symbols, and definitions used herein are defined in MIL-PRF-38535 and MIL-HDBK-1331. 6.6 Sources of supply. 6.6.1 Sources of supply for device classes Q and V. Sources of supply for device classes Q and V are listed in QML-38535. The vendors listed in QML-38535 have submitted a certificate of compliance (see 3.6 herein) to DLA Land and Maritime-VA and have agreed to this drawing. 6.6.2 Approved sources of supply for device class M. Approved sources of supply for class M are listed in MIL-HDBK-103. The vendors listed in MIL-HDBK-103 have agreed to this drawing and a certificate of compliance (see 3.6 herein) has been submitted to and accepted by DLA Land and Maritime-VA. STANDARD MICROCIRCUIT DRAWING DLA LAND AND MARITIME COLUMBUS, OHIO 43218-3990 DSCC FORM 2234 APR 97 SIZE 5962-89615 A REVISION LEVEL F SHEET 18 APPENDIX A APPENDIX A FORMS A PART OF SMD 5962-89615 A.1 SCOPE A.1.1 Scope. This appendix establishes minimum requirements for microcircuit die to be supplied under the Qualified Manufacturers List (QML) Program. QML microcircuit die meeting the requirements of MIL-PRF-38535 and the manufacturers approved QM plan for use in monolithic microcircuits, multi-chip modules (MCMs), hybrids, electronic modules, or devices using chip and wire designs in accordance with MIL-PRF-38534 are specified herein. Two product assurance classes consisting of military high reliability (device class Q) and space application (device class V) are reflected in the Part or Identification Number (PIN). When available, a choice of Radiation Hardiness Assurance (RHA) levels are reflected in the PIN. A.1.2 PIN. The PIN is as shown in the following example: 5962 F Federal stock class designator \ RHA designator (see A.1.2.1) 89615 01 V 9 A Device type (see A.1.2.2) Device class designator (see A.1.2.3) Die code Die details (see A.1.2.4) / \/ Drawing number A.1.2.1 RHA designator. Device classes Q and V RHA identified die meet the MIL-PRF-38535 specified RHA levels. A dash (-) indicates a non-RHA die. A.1.2.2 Device type(s). The device type(s) identify the circuit function as follows: Device type Generic number 01 Circuit function DS16F95 RS-485 differential bus transceiver A.1.2.3 Device class designator. Device class Q or V STANDARD MICROCIRCUIT DRAWING DLA LAND AND MARITIME COLUMBUS, OHIO 43218-3990 DSCC FORM 2234 APR 97 Device requirements documentation Certification and qualification to the die requirements of MIL-PRF-38535 SIZE 5962-89615 A REVISION LEVEL F SHEET 19 APPENDIX A APPENDIX A FORMS A PART OF SMD 5962-89615 A.1.2.4 Die details. The die details designation is a unique letter which designates the die's physical dimensions, bonding pad location(s) and related electrical function(s), interface materials, and other assembly related information, for each product and variant supplied to this appendix. A.1.2.4.1 Die physical dimensions. Die type Figure number 01 A-1 A.1.2.4.2 Die bonding pad locations and electrical functions. Die type Figure number 01 A-1 A.1.2.4.3 Interface materials. Die type Figure number 01 A-1 A.1.2.4.4 Assembly related information. Die type Figure number 01 A-1 A.1.3 Absolute maximum ratings. See paragraph 1.3 herein for details. A.1.4 Recommended operating conditions. See paragraph 1.4 herein for details. A.2 APPLICABLE DOCUMENTS. A.2.1 Government specification, standards, and handbooks. The following specification, standards, and handbooks form a part of this drawing to the extent specified herein. Unless otherwise specified, the issues of these documents are those cited in the solicitation or contract. DEPARTMENT OF DEFENSE SPECIFICATION MIL-PRF-38535 - Integrated Circuits, Manufacturing, General Specification for. DEPARTMENT OF DEFENSE STANDARD MIL-STD-883 - Test Method Standard Microcircuits. DEPARTMENT OF DEFENSE HANDBOOKS MIL-HDBK-103 - List of Standard Microcircuit Drawings. MIL-HDBK-780 - Standard Microcircuit Drawings. (Copies of these documents are available online at https://assist.daps.dla.mil/quicksearch/ or from the Standardization Document Order Desk, 700 Robbins Avenue, Building 4D, Philadelphia, PA 19111-5094.) STANDARD MICROCIRCUIT DRAWING DLA LAND AND MARITIME COLUMBUS, OHIO 43218-3990 DSCC FORM 2234 APR 97 SIZE 5962-89615 A REVISION LEVEL F SHEET 20 APPENDIX A APPENDIX A FORMS A PART OF SMD 5962-89615 A.2.2 Order of precedence. In the event of a conflict between the text of this drawing and the references cited herein, the text of this drawing takes precedence. Nothing in this document, however, supersedes applicable laws and regulations unless a specific exemption has been obtained. A.3 REQUIREMENTS A.3.1 Item requirements. The individual item requirements for device classes Q and V shall be in accordance with MIL-PRF-38535 and as specified herein or as modified in the device manufacturer’s Quality Management (QM) plan. The modification in the QM plan shall not affect the form, fit, or function as described herein. A.3.2 Design, construction and physical dimensions. The design, construction, and physical dimensions shall be as specified in MIL-PRF-38535 and herein and the manufacturer’s QM plan for device classes Q and V. A.3.2.1 Die physical dimensions. The die physical dimensions shall be as specified in A.1.2.4.1 and on figure A-1. A.3.2.2 Die bonding pad locations and electrical functions. The die bonding pad locations and electrical functions shall be as specified in A.1.2.4.2 and on figure A-1. A.3.2.3 Interface materials. The interface materials for the die shall be as specified in A.1.2.4.3 and on figure A-1. A.3.2.4 Assembly related information. The assembly related information shall be as specified in A.1.2.4.4 and on figure A-1. A.3.2.5 Truth tables. The truth tables shall be as defined in paragraph 3.2.3 herein. A.3.2.6 Radiation exposure circuit. The radiation exposure circuit shall be as defined in paragraph 3.2.4 herein. A.3.3 Electrical performance characteristics and post-irradiation parameter limits. Unless otherwise specified herein, the electrical performance characteristics and post-irradiation parameter limits are as specified in table I of the body of this document. A.3.4 Electrical test requirements. The wafer probe test requirements shall include functional and parametric testing sufficient to make the packaged die capable of meeting the electrical performance requirements in table I. A.3.5 Marking. As a minimum, each unique lot of die, loaded in single or multiple stack of carriers, for shipment to a customer, shall be identified with the wafer lot number, the certification mark, the manufacturer’s identification and the PIN listed in A.1.2 herein. The certification mark shall be a “QML” or “Q” as required by MIL-PRF-38535. A.3.6 Certification of compliance. For device classes Q and V, a certificate of compliance shall be required from a QML-38535 listed manufacturer in order to supply to the requirements of this drawing (see A.6.4 herein). The certificate of compliance submitted to DLA Land and Maritime -VA prior to listing as an approved source of supply for this appendix shall affirm that the manufacturer’s product meets, for device classes Q and V, the requirements of MIL-PRF-38535 and the requirements herein. A.3.7 Certificate of conformance. A certificate of conformance as required for device classes Q and V in MIL-PRF-38535 shall be provided with each lot of microcircuit die delivered to this drawing. STANDARD MICROCIRCUIT DRAWING DLA LAND AND MARITIME COLUMBUS, OHIO 43218-3990 DSCC FORM 2234 APR 97 SIZE 5962-89615 A REVISION LEVEL F SHEET 21 APPENDIX A APPENDIX A FORMS A PART OF SMD 5962-89615 A.4 VERIFICATION A.4.1 Sampling and inspection. For device classes Q and V, die sampling and inspection procedures shall be in accordance with MIL-PRF-38535 or as modified in the device manufacturer’s Quality Management (QM) plan. The modifications in the QM plan shall not affect the form, fit, or function as described herein. A.4.2 Screening. For device classes Q and V, screening shall be in accordance with MIL-PRF-38535, and as defined in the manufacturer’s QM plan. As a minimum, it shall consist of: a. Wafer lot acceptance for class V product using the criteria defined in MIL-STD-883, method 5007. b. 100% wafer probe (see paragraph A.3.4 herein). c. 100% internal visual inspection to the applicable class Q or V criteria defined in MIL-STD-883, method 2010 or the alternate procedures allowed in MIL-STD-883, method 5004. A.4.3 Conformance inspection. A.4.3.1 Group E inspection. Group E inspection is required only for parts intended to be identified as radiation assured (see A.3.5 herein). RHA levels for device classes Q and V shall be as specified in MIL-PRF-38535. End point electrical testing of packaged die shall be as specified in table II herein. Group E tests and conditions are as specified in paragraphs 4.4.4 and 4.4.4.1 herein. A.5 DIE CARRIER A.5.1 Die carrier requirements. The requirements for the die carrier shall be accordance with the manufacturer’s QM plan or as specified in the purchase order by the acquiring activity. The die carrier shall provide adequate physical, mechanical and electrostatic protection. A.6 NOTES A.6.1 Intended use. Microcircuit die conforming to this drawing are intended for use in microcircuits built in accordance with MIL-PRF-38535 or MIL-PRF-38534 for government microcircuit applications (original equipment), design applications, and logistics purposes. A.6.2 Comments. Comments on this appendix should be directed to DLA Land and Maritime -VA, Columbus, Ohio, 43218-3990 or telephone (614)-692-0540. A.6.3 Abbreviations, symbols, and definitions. The abbreviations, symbols, and definitions used herein are defined in MIL-PRF-38535 and MIL-HDBK-1331. A.6.4 Sources of supply for device classes Q and V. Sources of supply for device classes Q and V are listed in QML-38535. The vendors listed within QML-38535 have submitted a certificate of compliance (see A.3.6 herein) to DLA Land and Maritime -VA and have agreed to this drawing. STANDARD MICROCIRCUIT DRAWING DLA LAND AND MARITIME COLUMBUS, OHIO 43218-3990 DSCC FORM 2234 APR 97 SIZE 5962-89615 A REVISION LEVEL F SHEET 22 APPENDIX A APPENDIX A FORMS A PART OF SMD 5962-89615 FIGURE A-1. Die bonding pad locations and electrical functions. STANDARD MICROCIRCUIT DRAWING DLA LAND AND MARITIME COLUMBUS, OHIO 43218-3990 DSCC FORM 2234 APR 97 SIZE 5962-89615 A REVISION LEVEL F SHEET 23 APPENDIX A APPENDIX A FORMS A PART OF SMD 5962-89615 Die bond pad coordinate locations (Z-step) (Referenced to die center, coordinates in m) NC = no connection, NU = not used Signal name Pad number X / Y coordinates Pad size X Y X Y R 1 -596 285 114 x 114 RE 2 -593 -420 114 x 114 DE 3 -602 -637 114 x 114 D 4 -596 -853 114 x 114 GND 5 -110 -916 114 x 114 IN/OUT A 6 563 -883 114 x 114 IN/OUT B 7 563 -85 114 x 114 NC 8 615 628 89 x 89 NC 9 615 755 89 x 89 NC 10 602 895 114 x 114 NC 11 211 894 114 x 114 VCC 12 9 916 114 x 114 Die bonding pad locations and electrical functions Die physical dimensions. Wafer diameter: 125 mm Die size: 1600 m x 2184 m Die thickness: 330 m nominal Minimum pitch: 215 m Interface materials. Top metallization: Al Backside metallization: Bare back Glassivation. Type: Nitride Thickness: 12.87 kÅ to 13.13 kÅ Substrate: Silicon Assembly related information. Substrate potential: Floating Special assembly instructions: Actual die size is rounded to the nearest micron. FIGURE A-1. Die bonding pad locations and electrical functions - continued. STANDARD MICROCIRCUIT DRAWING DLA LAND AND MARITIME COLUMBUS, OHIO 43218-3990 DSCC FORM 2234 APR 97 SIZE 5962-89615 A REVISION LEVEL F SHEET 24 STANDARD MICROCIRCUIT DRAWING BULLETIN DATE: 11-03-22 Approved sources of supply for SMD 5962-89615 are listed below for immediate acquisition information only and shall be added to MIL-HDBK-103 and QML-38535 during the next revision. MIL-HDBK-103 and QML-38535 will be revised to include the addition or deletion of sources. The vendors listed below have agreed to this drawing and a certificate of compliance has been submitted to and accepted by DLA Land and Maritime -VA. This information bulletin is superseded by the next dated revision of MIL-HDBK-103 and QML-38535. DLA Land and Maritime maintains an online database of all current sources of supply at http://www.dscc.dla.mil/Programs/Smcr/. Standard microcircuit drawing PIN 1/ Vendor CAGE number Vendor similar PIN 2/ 5962-89615012A 27014 DS16F95E/883 5962-8961501HA 3/ DS16F95W/883 5962-8961501PA 27014 DS16F95J/883 5962-8961501QXA 3/ DS16F95WG/883 5962-8961501VHA 3/ DS16F95W-QMLV 5962-8961501VPA 3/ DS16F95J-QMLV 5962-8961501VXA 3/ DS16F95WG-QMLV 5962F8961501QHA 3/ DS16F95WFQML 5962F8961501QPA 3/ DS16F95JFQML 5962F8961501QXA 3/ DS16F95WGQML 5962F8961501VHA 27014 DS16F95WFQMLV 5962F8961501VPA 3/ DS16F95JFQMLV 5962F8961501VXA 3/ DS16F95WGFQMLV 5962F8961501V9A 27014 DS16F95 MDR 1/ The lead finish shown for each PIN representing a hermetic package is the most readily available from the manufacturer listed for that part. If the desired lead finish is not listed contact the vendor to determine its availability. 2/ Caution. Do not use this number for item acquisition. Items acquired to this number may not satisfy the performance requirements of this drawing. 3/ Not available from an approved source of supply. Vendor CAGE number 27014 Vendor name and address National Semiconductor 2900 Semiconductor Drive P. O. Box 58090 Santa Clara, CA 95052-8090 The information contained herein is disseminated for convenience only and the Government assumes no liability whatsoever for any inaccuracies in the information bulletin.