TVS Diode Transient Voltage Suppressor Diodes ESD3V3XU1U Series Uni-directional Ultra Low Capacitance ESD / Transient Protection Diode ESD3V3XU1UL ESD3V3XU1US Data Sheet Revision 1.1, 2011-10-19 Final Industrial and Multi-Market Edition 2011-10-19 Published by Infineon Technologies AG 81726 Munich, Germany © 2011 Infineon Technologies AG All Rights Reserved. Legal Disclaimer The information given in this document shall in no event be regarded as a guarantee of conditions or characteristics. With respect to any examples or hints given herein, any typical values stated herein and/or any information regarding the application of the device, Infineon Technologies hereby disclaims any and all warranties and liabilities of any kind, including without limitation, warranties of non-infringement of intellectual property rights of any third party. Information For further information on technology, delivery terms and conditions and prices, please contact the nearest Infineon Technologies Office (www.infineon.com). Warnings Due to technical requirements, components may contain dangerous substances. For information on the types in question, please contact the nearest Infineon Technologies Office. Infineon Technologies components may be used in life-support devices or systems only with the express written approval of Infineon Technologies, if a failure of such components can reasonably be expected to cause the failure of that life-support device or system or to affect the safety or effectiveness of that device or system. Life support devices or systems are intended to be implanted in the human body or to support and/or maintain and sustain and/or protect human life. If they fail, it is reasonable to assume that the health of the user or other persons may be endangered. ESD3V3XU1U Series Revision History Page or Item Subjects (major changes since previous revision) Revision 1.1, 2011-10-19 Table3-2; Table3-4; Figure3-4 updated Revision 1.0 2011.09.07 Trademarks of Infineon Technologies AG AURIX™, BlueMoon™, C166™, CanPAK™, CIPOS™, CIPURSE™, COMNEON™, EconoPACK™, CoolMOS™, CoolSET™, CORECONTROL™, CROSSAVE™, DAVE™, EasyPIM™, EconoBRIDGE™, EconoDUAL™, EconoPIM™, EiceDRIVER™, eupec™, FCOS™, HITFET™, HybridPACK™, I²RF™, ISOFACE™, IsoPACK™, MIPAQ™, ModSTACK™, my-d™, NovalithIC™, OmniTune™, OptiMOS™, ORIGA™, PRIMARION™, PrimePACK™, PrimeSTACK™, PRO-SIL™, PROFET™, RASIC™, ReverSave™, SatRIC™, SIEGET™, SINDRION™, SIPMOS™, SMARTi™, SmartLEWIS™, SOLID FLASH™, TEMPFET™, thinQ!™, TRENCHSTOP™, TriCore™, X-GOLD™, X-PMU™, XMM™, XPOSYS™. Other Trademarks Advance Design System™ (ADS) of Agilent Technologies, AMBA™, ARM™, MULTI-ICE™, KEIL™, PRIMECELL™, REALVIEW™, THUMB™, µVision™ of ARM Limited, UK. AUTOSAR™ is licensed by AUTOSAR development partnership. Bluetooth™ of Bluetooth SIG Inc. CAT-iq™ of DECT Forum. COLOSSUS™, FirstGPS™ of Trimble Navigation Ltd. EMV™ of EMVCo, LLC (Visa Holdings Inc.). EPCOS™ of Epcos AG. FLEXGO™ of Microsoft Corporation. FlexRay™ is licensed by FlexRay Consortium. HYPERTERMINAL™ of Hilgraeve Incorporated. IEC™ of Commission Electrotechnique Internationale. IrDA™ of Infrared Data Association Corporation. ISO™ of INTERNATIONAL ORGANIZATION FOR STANDARDIZATION. MATLAB™ of MathWorks, Inc. MAXIM™ of Maxim Integrated Products, Inc. MICROTEC™, NUCLEUS™ of Mentor Graphics Corporation. Mifare™ of NXP. MIPI™ of MIPI Alliance, Inc. MIPS™ of MIPS Technologies, Inc., USA. muRata™ of MURATA MANUFACTURING CO., MICROWAVE OFFICE™ (MWO) of Applied Wave Research Inc., OmniVision™ of OmniVision Technologies, Inc. Openwave™ Openwave Systems Inc. RED HAT™ Red Hat, Inc. RFMD™ RF Micro Devices, Inc. SIRIUS™ of Sirius Satellite Radio Inc. SOLARIS™ of Sun Microsystems, Inc. SPANSION™ of Spansion LLC Ltd. Symbian™ of Symbian Software Limited. TAIYO YUDEN™ of Taiyo Yuden Co. TEAKLITE™ of CEVA, Inc. TEKTRONIX™ of Tektronix Inc. TOKO™ of TOKO KABUSHIKI KAISHA TA. UNIX™ of X/Open Company Limited. VERILOG™, PALLADIUM™ of Cadence Design Systems, Inc. VLYNQ™ of Texas Instruments Incorporated. VXWORKS™, WIND RIVER™ of WIND RIVER SYSTEMS, INC. ZETEX™ of Diodes Zetex Limited. Last Trademarks Update 2010-10-26 Final Data Sheet 3 Revision 1.1, 2011-10-19 ESD3V3XU1U Series Table of Contents Table of Contents Table of Contents . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 4 List of Figures . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 5 List of Tables . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 6 1 1.1 1.2 Uni-directional Ultra Low Capacitance ESD / Transient Protection Diode . . . . . . . . . . . . . . . . . . 7 Features . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 7 Application Examples . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 7 2 Product Description . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 7 3 3.1 3.2 Characteristics . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 8 Electrical Characteristics at TA = 25 °C, unless otherwise specified . . . . . . . . . . . . . . . . . . . . . . . . . . 8 Typical Characteristics at TA=25°C, unless otherwise specified . . . . . . . . . . . . . . . . . . . . . . . . . . . . 10 4 Application Information . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 17 5 5.1 5.2 Package Information . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 18 PG-TSLP-2-17 (mm) [3] . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 18 PG-TSSLP-2-1 (mm) [3] . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 19 References . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 20 Terminology . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 21 Final Data Sheet 4 Revision 1.1, 2011-10-19 ESD3V3XU1U Series List of Figures List of Figures Figure 2-1 Figure 3-1 Figure 3-2 Figure 3-3 Figure 3-4 Figure 3-5 Figure 3-6 Figure 3-7 Figure 3-8 Figure 3-9 Figure 3-10 Figure 3-11 Figure 3-12 Figure 3-13 Figure 3-14 Figure 4-1 Figure 5-1 Figure 5-2 Figure 5-3 Figure 5-4 Figure 5-5 Figure 5-6 Figure 5-7 Figure 5-8 Pin Configuration and Schematic Diagram. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 7 Definitions of electrical characteristics . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 8 Forward current, IF = (VF) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 10 Reverse current, IR = (VR) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 10 Reverse voltage characteristic, IR = (VR) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 11 Reverse current IR = f(TA), VR = 3.3 V . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 11 Line capacitance CL = f(VR), f = 1MHz, from pin 1 to pin 2 . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 12 IEC61000-4-2 VCL = f(t), 8 kV positive pulse from pin 1 to pin 2 . . . . . . . . . . . . . . . . . . . . . . . . . . 13 IEC61000-4-2 VCL = f(t), 8 kV negative pulse from pin 1 to pin 2 . . . . . . . . . . . . . . . . . . . . . . . . . . 13 IEC61000-4-2 VCL = f(t), 15 kV positive pulse from pin 1 to pin 2 . . . . . . . . . . . . . . . . . . . . . . . . . 14 IEC61000-4-2 VCL = f(t), 15 kV negative pulse from pin 1 to pin 2 . . . . . . . . . . . . . . . . . . . . . . . . . 14 Clamping voltage VTLP = f(ITLP), from pin 2 to pin 1 Note: [2] . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 15 Clamping voltage VTLP = f(ITLP), from pin 1 to pin 2 Note: [2] . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 15 Forward clamping voltage IPP = f(VFC), from pin 1 to pin 2 according to IEC61000-4-5 (8/20 μs) . 16 Reverse clamping voltage IPP = f(VCL), from pin 1 to pin 2 according to IEC61000-4-5 (8/20 μs) . 16 Single line, uni-directional ESD / Transient protection . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 17 PG-TSLP-2-17: Package overview. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 18 PG-TSLP-2-17: Footprint . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 18 PG-TSLP-2-17: Packing . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 18 PG-TSLP-2-17: Marking (example) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 18 PG-TSSLP-2-1: Package overview . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 19 PG-TSSLP-2-1: Footprint . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 19 PG-TSSLP-2-1: Packing. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 19 PG-TSSLP-2-1: Marking (example) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 19 Final Data Sheet 5 Revision 1.1, 2011-10-19 ESD3V3XU1U Series List of Tables List of Tables Table 2-1 Table 3-1 Table 3-2 Table 3-3 Table 3-4 Ordering Information . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . Maximum Rating at TA = 25 °C, unless otherwise specified . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . DC Characteristics at TA = 25 °C, unless otherwise specified . . . . . . . . . . . . . . . . . . . . . . . . . . . . . RF Characteristics at TA = 25 °C, unless otherwise specified . . . . . . . . . . . . . . . . . . . . . . . . . . . . . ESD Characteristics at TA = 25 °C, unless otherwise specified . . . . . . . . . . . . . . . . . . . . . . . . . . . . Final Data Sheet 6 7 8 8 9 9 Revision 1.1, 2011-10-19 ESD3V3XU1U Series Uni-directional Ultra Low Capacitance ESD / Transient Protection Diode 1 Uni-directional Ultra Low Capacitance ESD / Transient Protection Diode 1.1 Features • • • • • • ESD / transient protection of high speed data lines exceeding: – IEC61000-4-2 (ESD): ±20 kV (air / contact) – IEC61000-4-4 (EFT): 2.5 kV / 50 A (5/50 ns) – IEC61000-4-5 (surge): 3 A (8/20 μs) Maximum working voltage: VRWM = 3.3 V Ultra low capacitance CL = 0.4 pF (typical) Very low clamping voltage: VCL= 8 V at IPP = 16 A (typical) [2] Very low dynamic resistance: RDYN = 0.19 Ω (typical) [2] Pb-free and halogen-free package (RoHS compliant) 1.2 • • Application Examples USB 3.0, 10/100/1000 Ethernet, Firewire, DVI, HDMI, S-ATA, DisplayPort Mobile HDMI Link, MDDI, MIPI, SWP / NFC 2 Product Description Pin 1 Pin 1 Pin 2 TSLP-2 Pin 1 marking (lasered) TSSLP -2 Pin 1 Pin 2 Pin 2 a) Pin configuration b) Schematic diagram P G-TS (S)LP -2-S ingle_Die_diode_P inConf_and_S c hematicDiag.v st. vs d Figure 2-1 Pin Configuration and Schematic Diagram Table 2-1 Ordering Information Type Package Configuration ESD3V3XU1UL PG-TSLP-2-17 1 line, uni-directional X1 ESD3V3XU1US PG-TSSLP-2-1 1 line, uni-directional K Final Data Sheet 7 Marking code Revision 1.1, 2011-10-19 ESD3V3XU1U Series Characteristics 3 Characteristics Table 3-1 Maximum Rating at TA = 25 °C, unless otherwise specified Parameter Symbol ESD (air / contact) discharge 1) Peak pulse current (tp = 8/20 μs) 2) Operating temperature range Values Min. Typ. Max. VESD – – 20 kV IPP – – 3 A TOP -40 – 125 °C – 150 °C Storage temperature Tstg -65 1) VESD according to IEC61000-4-2 (R = 330 Ω, C = 150 pF) 2) IPP according to IEC61000-4-5 Electrical Characteristics at TA = 25 °C, unless otherwise specified 3.1 VF Forward voltage IF Forward current VR IR Unit IF RDYN VTrig I PP Reverse voltage VCL RDYN Reverse current VHold VRWM VHold VTrig VR VRWM VCL VFC VF Dynamic resistance Triggering reverse voltage Clamping voltage Holding reverse voltage Reverse working voltage maximum VFC Forward clamping voltage ITrig Triggering reverse current I Trig IHold Holding reverse current IHold IPP IRWM IRWM RDYN Peak pulse current Reverse working current maximum -I PP IR Diode_Charac teris tic _Curve_with _s napbac k_Uni-direc tional .v s d Figure 3-1 Definitions of electrical characteristics Table 3-2 DC Characteristics at TA = 25 °C, unless otherwise specified Parameter Symbol Values Unit Note / Test Condition Min. Typ. Max. Reverse working voltage VRWM – – 3.3 V Pin 1 to Pin 2 Reverse current – 1 50 nA VR = 3.3 V, IR from Pin 1 to Pin 2 Reverse breakdown voltage Final Data Sheet VBR – 6.5 – 8 V IR = 1 mA from Pin 1 to Pin 2 voltage forced Revision 1.1, 2011-10-19 ESD3V3XU1U Series Characteristics Table 3-3 RF Characteristics at TA = 25 °C, unless otherwise specified Parameter Symbol Line capacitance Series inductance Table 3-4 CL LS Values Unit Note / Test Condition Min. Typ. Max. – 0.4 0.65 pF VR = 0 V, f = 1 MHz – 0.4 0.65 pF VR = 0 V, f = 1 GHz – 0.4 – nH ESD3V3XU1US – 0.2 – nH ESD3V3XU1UL Unit Note / Test Condition ESD Characteristics at TA = 25 °C, unless otherwise specified Parameter Symbol 1) Values Min. Typ. Max. Trigger voltage [2] VTRIG – 7.2 – V TLP, from Pin 1 to Pin 2 Reverse clamping voltage1) [2] VCL – 8 – V TLP, IPP = 16 A, from Pin 1 to Pin 2 – 11 – V TLP, IPP = 30 A, from Pin 1 to Pin 2 – 6 – V TLP, IPP = 16 A, from Pin 2 to Pin 1 – 9 – V TLP, IPP = 30 A, from Pin 2 to Pin 1 – 0.19 – Ω TLP, Pin 1 to Pin 2 Forward clamping voltage1) [2] VFC Dynamic resistance1) [2] RDYN – 0.23 – Ω TLP, Pin 2 to Pin 1 1)Please refer to Application Note AN210. ANSI/ESD STM5.5.1 - Electrostatic Discharge Sensitivity Testing using Transmission Line Pulse (TLP), tp = 100ns, tr = 0.6 ns, ITLP and VTLP averaging window: t1 = 30 ns to t2 = 60 ns, extraction of dynamic TLP characteristic between IPP1 = 10 A and IPP2 = 40 A. Final Data Sheet 9 Revision 1.1, 2011-10-19 ESD3V3XU1U Series Characteristics Typical Characteristics at TA=25°C, unless otherwise specified 3.2 0 10 10-1 10-2 10-3 IF [A] 10-4 10-5 10-6 -7 10 -8 10 -9 10 0 0.1 0.2 0.3 0.4 0.5 VF [V] 0.6 0.7 0.8 0.9 1 Figure 3-2 Forward current, IF = (VF) -7 10 10-8 IR [A] -9 10 10-10 10-11 10 -12 0 1 2 VR [V] 3 4 Figure 3-3 Reverse current, IR = (VR) Final Data Sheet 10 Revision 1.1, 2011-10-19 ESD3V3XU1U Series Characteristics -3 10 10-4 -5 10 10-6 -7 IR [A] 10 -8 10 10-9 10 -10 10 -11 10 -12 0 1 2 3 4 5 6 7 VR [V] Figure 3-4 Reverse voltage characteristic, IR = (VR) -6 10 IR [A] 10-7 10-8 10-9 25 50 75 100 125 150 TA [°C] Figure 3-5 Reverse current IR = f(TA), VR = 3.3 V Final Data Sheet 11 Revision 1.1, 2011-10-19 ESD3V3XU1U Series Characteristics 0.8 CL [pF] 0.6 0.4 0.2 0 0.5 1 1.5 2 2.5 3 3.5 VR [V] Figure 3-6 Line capacitance CL = f(VR), f = 1MHz, from pin 1 to pin 2 Final Data Sheet 12 Revision 1.1, 2011-10-19 ESD3V3XU1U Series Characteristics 80 Scope: 6 GHz, 20 GS/s 60 VCL [V] VCL-max-peak = 81 [V] VCL-30ns-peak = 7 [V] 40 20 0 -20 -100 0 100 200 300 400 tp [ns] 500 600 700 800 900 Figure 3-7 IEC61000-4-2 VCL = f(t), 8 kV positive pulse from pin 1 to pin 2 20 Scope: 6 GHz, 20 GS/s 0 VCL [V] -20 VCL-max-peak = -72 [V] -40 VCL-30ns-peak = -3 [V] -60 -80 -100 0 100 200 300 400 tp [ns] 500 600 700 800 900 Figure 3-8 IEC61000-4-2 VCL = f(t), 8 kV negative pulse from pin 1 to pin 2 Final Data Sheet 13 Revision 1.1, 2011-10-19 ESD3V3XU1U Series Characteristics 100 Scope: 6 GHz, 20 GS/s VCL [V] 80 VCL-max-peak = 104 [V] VCL-30ns-peak = 9 [V] 60 40 20 0 -20 -100 0 100 200 300 400 tp [ns] 500 600 700 800 900 Figure 3-9 IEC61000-4-2 VCL = f(t), 15 kV positive pulse from pin 1 to pin 2 20 Scope: 6 GHz, 20 GS/s 0 VCL [V] -20 -40 VCL-max-peak = -98 [V] VCL-30ns-peak = -7 [V] -60 -80 -100 -100 0 100 200 300 400 tp [ns] 500 600 700 800 900 Figure 3-10 IEC61000-4-2 VCL = f(t), 15 kV negative pulse from pin 1 to pin 2 Final Data Sheet 14 Revision 1.1, 2011-10-19 ESD3V3XU1U Series Characteristics 50 25 ESD3V3XU1U Series RDYN 40 ITLP [A] RDYN=0.23Ω 30 15 20 10 10 5 0 0 5 10 VTLP [V] 15 20 Equivalent VIEC [kV] 20 0 Figure 3-11 Clamping voltage VTLP = f(ITLP), from pin 2 to pin 1 Note: [2] 50 25 ESD3V3XU1U Series RDYN 40 ITLP [A] RDYN=0.19Ω 30 15 20 10 10 5 0 0 5 10 VTLP [V] 15 20 Equivalent VIEC [kV] 20 0 Figure 3-12 Clamping voltage VTLP = f(ITLP), from pin 1 to pin 2 Note: [2] Note: TLP parameter: Z0 = 50 Ω, tp = 100 ns, tr = 600 ps, averaging window: t1 = 30 ns to t2 = 60 ns, extraction of dynamic resistance using least squares fit of TLP charactertistic between IPP1 = 10 A and IPP2 = 40 A. The equivalent stress level VIEC according IEC 61000-4-2 (R = 330 Ω , C = 150 pF) is calculated at the broad peak of the IEC waveform at t = 30 ns with 2 A / kV Final Data Sheet 15 Revision 1.1, 2011-10-19 ESD3V3XU1U Series Characteristics -1 VFC [V] -1.5 -2 -2.5 -3 0 1 2 3 4 5 IPP [A] Figure 3-13 Forward clamping voltage IPP = f(VFC), from pin 1 to pin 2 according to IEC61000-4-5 (8/20 μs) 7 VCL [V] 6 5 4 3 0 1 2 3 4 5 IPP [A] Figure 3-14 Reverse clamping voltage IPP = f(VCL), from pin 1 to pin 2 according to IEC61000-4-5 (8/20 μs) Final Data Sheet 16 Revision 1.1, 2011-10-19 ESD3V3XU1U Series Application Information 4 Application Information Application_ESD3V3U1U-02xxx.vsd Figure 4-1 Single line, uni-directional ESD / Transient protection Final Data Sheet 17 Revision 1.1, 2011-10-19 ESD3V3XU1U Series Package Information 5 Package Information 5.1 PG-TSLP-2-17 (mm) [3] Top view Bottom view 0.39 +0.01 -0.03 0.6 ±0.05 0.05 MAX. 1±0.05 0.65 ±0.05 2 0.25 ±0.035 1) 1 0.5 ±0.035 1) Cathode marking 1) Dimension applies to plated terminal TSLP 2 7 PO V02 0.45 Copper Solder mask 0.375 0.35 0.275 1 0.925 0.3 0.35 0.6 0.275 Figure 5-1 PG-TSLP-2-17: Package overview Stencil apertures TSLP-2-7-FP V01 Figure 5-2 PG-TSLP-2-17: Footprint 0.5 1.16 Orientation marking 8 4 0.76 TSLP-2-7-TP V03 Figure 5-3 PG-TSLP-2-17: Packing Type code 12 Cathode marking Figure 5-4 PG-TSLP-2-17: Marking (example) Final Data Sheet 18 Revision 1.1, 2011-10-19 ESD3V3XU1U Series Package Information PG-TSSLP-2-1 (mm) [3] Top view Bottom view 0.31 +0.01 -0.02 2 0.62 ±0.035 0.355 ±0.025 0.32 ±0.035 1 0.2 ±0.025 1) 5.2 0.26 ±0.025 1) Cathode marking 1) Dimension applies to plated terminal TSSLP-2-1,-2-PO V05 Figure 5-5 PG-TSSLP-2-1: Package overview 0.19 0.24 Solder mask 0.19 0.57 0.14 0.62 Copper 0.19 0.27 0.24 0.32 Stencil apertures TSSLP-2-1,-2-FP V02 Figure 5-6 PG-TSSLP-2-1: Footprint a Tape type Ex Ey Punched Tape 0.43 0.73 Embossed Tape 0.37 0.67 8 Ey Cathode marking g 0.35 4 Deliveries can be both tape types (no selection possible). Specification allows identical processing (pick & place) by users. Ex TSSLP-2-1,-2-TP V03 Figure 5-7 PG-TSSLP-2-1: Packing Figure 5-8 PG-TSSLP-2-1: Marking (example) Final Data Sheet 19 Revision 1.1, 2011-10-19 ESD3V3XU1U Series References References [1] On-chip ESD protection for integrated circuits, Albert Z. H. Wang, ISBN:0-7923-7647-1 [2] Infineon AG - Application Note AN210: Effective ESD Protection Design at System Level Using VF-TLP Characterization Methodology [3] Infineon AG - Recommendations for PCB Assembly of Infineon TSLP and TSSLP Package Final Data Sheet 20 Revision 1.1, 2011-10-19 ESD3V3XU1U Series Terminology Terminology CL Line capacitance DVI Digital Visual Interface EFT Electrical Fast Transient ESD Electrostatic Discharge HDMI High Definition Multimedia Interface IEC International Electrotechnical Commission IPP Peak pulse current IR Reverse current IRWM Reverse working current maximum MDDI Mobile Display Digital Interface MIPI Mobile Industrial Processor Interface NFC Near Field Communication PCB Printed Circuit Board RDYN Dynamic resistance RoHS Restriction of Hazardous Substances Directive S-ATA Serial Advanced Technology Attachment SWP Single Wire Protocol TA Ambient temperature TLP Transmission Line Pulse TOP Operation temperature tp Pulse duration tr Pulse rise time Tstg Storage temperature USB Universal Serial Bus VCL Reverse clamping voltage VESD Electrostatic discharge voltage VFC Forward Clamping Voltage VHold Holding Voltage VIEC Equivalent stress level according IEC61000-4-2 (R = 330 Ω, C = 150 pF) VR Reverse voltage VRWM Reverse working voltage maximum VTrig Triggering Voltage Z0 Impedance Final Data Sheet 21 Revision 1.1, 2011-10-19 w w w . i n f i n e o n . c o m Published by Infineon Technologies AG