New Product SiZ902DT Vishay Siliconix Dual N-Channel 30 V (D-S) MOSFETs FEATURES PRODUCT SUMMARY VDS (V) Channel-1 30 Channel-2 30 RDS(on) () (Max.) ID (A) 0.0120 at VGS = 10 V 16a 0.0145 at VGS = 4.5 V 16a 0.0064 at VGS = 10 V 16a 0.0083 at VGS = 4.5 V a 16 Qg (Typ.) 6.8 nC • Halogen-free According to IEC 61249-2-21 Definition • TrenchFET® Power MOSFETs • 100 % Rg and UIS Tested • Compliant to RoHS Directive 2002/95/EC APPLICATIONS 21 nC • Notebook System Power • POL • Synchronous Buck Converter D1 PowerPAIR® 6 x 5 Pin 1 G1 1 5 mm D1 2 D1 G1 D1 3 D1 N-Channel 1 MOSFET 4 G2 S1/D2 Pin 9 8 S1/D2 S2 7 6 mm 6 G2 5 N-Channel 2 MOSFET Ordering Information: SiZ902DT-T1-GE3 (Lead (Pb)-free and Halogen-free) S2 ABSOLUTE MAXIMUM RATINGS (TA = 25 °C, unless otherwise noted) Parameter Symbol VDS VGS Drain-Source Voltage Gate-Source Voltage Continuous Drain Current (TJ = 150 °C) TC = 25 °C TC = 70 °C TA = 25 °C TA = 70 °C ID Continuous Source Drain Diode Current TC = 25 °C TA = 25 °C IS Single Pulse Avalanche Current Single Pulse Avalanche Energy L = 0.1 mH IAS EAS Maximum Power Dissipation TC = 25 °C TC = 70 °C TA = 25 °C TA = 70 °C PD Unit V a 16 16a 16 16a 14.3b, c 11.4b, c 50 16a 16a, b, c 16a, b, c 80 3.4b, c 18 16 29 18 16a 4.1b, c 30 45 66 42 4.2b, c 2.7b, c 5b, c 3.2b, c TJ, Tstg Operating Junction and Storage Temperature Range Soldering Recommendations (Peak Temperature)d, e Channel-2 30 ± 20 a IDM Pulsed Drain Current (t = 300 µs) Channel-1 A mJ W - 55 to 150 260 °C THERMAL RESISTANCE RATINGS Channel-1 Parameter b, f t 10 s Symbol RthJA RthJC Channel-2 Typ. Max. Typ. Max. 24 3.4 30 4.3 20 1.5 25 1.9 Unit Maximum Junction-to-Ambient °C/W Maximum Junction-to-Case (Drain) Steady State Notes: a. Package limited. b. Surface mounted on 1" x 1" FR4 board. c. t = 10 s. d. See solder profile (www.vishay.com/doc?73257). The PowerPAIR is a leadless package. The end of the lead terminal is exposed copper (not plated) as a result of the singulation process in manufacturing. A solder fillet at the exposed copper tip cannot be guaranteed and is not required to ensure adequate bottom side solder interconnection. e. Rework conditions: manual soldering with a soldering iron is not recommended for leadless components. f. Maximum under steady state conditions is 65 °C/W for channel-1 and 57 °C/W for channel-2. Document Number: 63465 S11-2380 Rev. B, 28-Nov-11 www.vishay.com 1 This document is subject to change without notice. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000 New Product SiZ902DT Vishay Siliconix SPECIFICATIONS (TJ = 25 °C, unless otherwise noted) Parameter Symbol Test Conditions Min. Typ. Max. Unit Static Drain-Source Breakdown Voltage VDS Temperature Coefficient VGS(th) Temperature Coefficient Gate Threshold Voltage Gate Source Leakage Zero Gate Voltage Drain Current On-State Drain Currentb Drain-Source On-State Resistanceb Forward Transconductanceb VDS VDS/TJ VGS(th)/TJ VGS(th) IGSS IDSS ID(on) RDS(on) gfs VGS = 0 V, ID = 250 µA Ch-1 30 VGS = 0 V, ID = 250 µA Ch-2 30 ID = 250 µA Ch-1 ID = 250 µA Ch-2 33 ID = 250 µA Ch-1 -5 V 33 mV/°C ID = 250 µA Ch-2 VDS = VGS, ID = 250 µA Ch-1 1 2.2 VDS = VGS, ID = 250 µA Ch-2 1 2.2 - 4.6 Ch-1 ± 100 Ch-2 ± 100 VDS = 30 V, VGS = 0 V Ch-1 1 VDS = 30 V, VGS = 0 V Ch-2 1 VDS = 30 V, VGS = 0 V, TJ = 55 °C Ch-1 5 VDS = 0 V, VGS = ± 20 V VDS = 30 V, VGS = 0 V, TJ = 55 °C Ch-2 VDS 5 V, VGS = 10 V Ch-1 20 VDS 5 V, VGS = 10 V Ch-2 20 V nA µA 5 A VGS = 10 V, ID = 13.8 A Ch-1 0.010 VGS = 10 V, ID = 20 A Ch-2 0.0053 0.0064 VGS = 4.5 V, ID = 12.6 A Ch-1 0.0120 0.0145 VGS = 4.5 V, ID = 20 A Ch-2 0.0068 0.0083 VDS = 10 V, ID = 13.8 A Ch-1 47 VDS = 10 V, ID = 20 A Ch-2 63 0.012 S Dynamica Input Capacitance Ciss Output Capacitance Coss Reverse Transfer Capacitance Total Gate Charge Gate-Source Charge Gate-Drain Charge Gate Resistance Crss Qg Channel-1 VDS = 15 V, VGS = 0 V, f = 1 MHz Channel-2 VDS = 15 V, VGS = 0 V, f = 1 MHz Rg 790 Ch-2 2600 Ch-1 190 Ch-2 485 pF Ch-1 76 Ch-2 215 VDS = 15 V, VGS = 10 V, ID = 13.8 A Ch-1 14 VDS = 15 V, VGS = 10 V, ID = 20 A Ch-2 43 65 Ch-1 6.8 11 32 Channel-1 VDS = 15 V, VGS = 4.5 V, ID = 13.8 A Ch-2 21 Ch-1 2.6 Channel-2 VDS = 15 V, VGS = 4.5 V, ID = 20 A Ch-2 8.1 Ch-1 1.9 Qgs Qgd Ch-1 Ch-2 f = 1 MHz 21 nC 6.5 Ch-1 0.4 2 4 Ch-2 0.3 1.5 3 Notes: a. Guaranteed by design, not subject to production testing. b. Pulse test; pulse width 300 µs, duty cycle 2 %. www.vishay.com 2 Document Number: 63465 S11-2380 Rev. B, 28-Nov-11 This document is subject to change without notice. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000 New Product SiZ902DT Vishay Siliconix SPECIFICATIONS (TJ = 25 °C, unless otherwise noted) Parameter Symbol Test Conditions Min. Typ. Max. Ch-1 15 30 Ch-2 23 50 Ch-1 12 20 Ch-2 20 40 Ch-1 20 40 Ch-2 35 70 Ch-1 10 20 Unit Dynamica Turn-On Delay Time Rise Time Turn-Off Delay Time Fall Time Turn-On Delay Time Rise Time Turn-Off Delay Time Fall Time td(on) tr td(off) tf td(on) tr Channel-1 VDD = 15 V, RL = 1.5 ID 10 A, VGEN = 4.5 V, Rg = 1 Channel-2 VDD = 15 V, RL = 1.5 ID 10 A, VGEN = 4.5 V, Rg = 1 Channel-1 VDD = 15 V, RL = 1.5 ID 10 A, VGEN = 10 V, Rg = 1 tf Channel-2 VDD = 15 V, RL = 1.5 ID 10 A, VGEN = 10 V, Rg = 1 IS TC = 25 °C td(off) Ch-2 10 20 Ch-1 10 20 Ch-2 22 25 Ch-1 12 20 Ch-2 10 20 Ch-1 20 40 Ch-2 35 70 Ch-1 10 20 Ch-2 10 20 ns Drain-Source Body Diode Characteristics Continuous Source-Drain Diode Current Pulse Diode Forward Currenta Body Diode Voltage Body Diode Reverse Recovery Time ISM VSD 16 Ch-1 50 Ch-2 0.85 1.2 IS = 10 A, VGS = 0 V Ch-2 0.8 1.2 Ch-1 20 40 Ch-2 25 50 Ch-1 10 20 Ch-2 13 25 Ch-1 11 Ch-2 12 Ch-1 9 Ch-2 13 Body Diode Reverse Recovery Charge Qrr Reverse Recovery Fall Time ta Channel-2 IF = 10 A, dI/dt = 100 A/µs, TJ = 25 °C A 80 Ch-1 trr tb 16 Ch-2 IS = 10 A, VGS = 0 V Channel-1 IF = 10 A, dI/dt = 100 A/µs, TJ = 25 °C Reverse Recovery Rise Time Ch-1 V ns nC ns Notes: a. Guaranteed by design, not subject to production testing. b. Pulse test; pulse width 300 µs, duty cycle 2 %. Stresses beyond those listed under “Absolute Maximum Ratings” may cause permanent damage to the device. These are stress ratings only, and functional operation of the device at these or any other conditions beyond those indicated in the operational sections of the specifications is not implied. Exposure to absolute maximum rating conditions for extended periods may affect device reliability. Document Number: 63465 S11-2380 Rev. B, 28-Nov-11 www.vishay.com 3 This document is subject to change without notice. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000 New Product SiZ902DT Vishay Siliconix CHANNEL-1 TYPICAL CHARACTERISTICS (25 °C, unless otherwise noted) 60 20 VGS = 10 V thru 4 V 16 I D - Drain Current (A) I D - Drain Current (A) 50 40 VGS = 3 V 30 20 12 TC = 25 °C 8 4 10 TC = 125 °C VGS = 2 V 0 0.0 0.5 1.0 1.5 2.0 2.5 TC = - 55 °C 0 0.0 3.0 0.5 VDS - Drain-to-Source Voltage (V) 1.0 1.5 2.0 2.5 3.0 3.5 VGS - Gate-to-Source Voltage (V) Output Characteristics Transfer Characteristics 1200 0.014 C - Capacitance (pF) R DS(on) - On-Resistance (Ω) 1000 0.012 VGS = 4.5 V 0.010 VGS = 10 V Ciss 800 600 400 Coss 0.008 200 Crss 0 0.006 0 10 20 30 40 50 0 60 5 ID - Drain Current (A) 10 15 20 25 VDS - Drain-to-Source Voltage (V) On-Resistance vs. Drain Current Capacitance 1.7 10 R DS(on) - On-Resistance (Normalized) ID = 13.8 A VGS - Gate-to-Source Voltage (V) 30 8 VDS = 15 V 6 VDS = 7.5 V VDS = 24 V 4 2 0 0 3 6 9 12 Qg - Total Gate Charge (nC) Gate Charge www.vishay.com 4 15 1.6 ID = 13.8 A 1.5 VGS = 10 V; 4.5 V 1.4 1.3 1.2 1.1 1.0 0.9 0.8 0.7 - 50 -- 25 0 25 50 75 100 TJ - Junction Temperature (°C) 125 150 On-Resistance vs. Junction Temperature Document Number: 63465 S11-2380 Rev. B, 28-Nov-11 This document is subject to change without notice. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000 New Product SiZ902DT Vishay Siliconix CHANNEL-1 TYPICAL CHARACTERISTICS (25 °C, unless otherwise noted) 0.030 100 ID = 13.8 A R DS(on) - On-Resistance (Ω) I S - Source Current (A) 0.025 10 TJ = 150 °C TJ = 25 °C 1 0.020 TJ = 125 °C 0.015 TJ = 25 °C 0.010 0.005 0.1 0.0 0.000 0.2 0.4 0.6 0.8 1.0 0 1.2 2 4 6 8 VGS - Gate-to-Source Voltage (V) VSD - Source-to-Drain Voltage (V) Source-Drain Diode Forward Voltage 10 On-Resistance vs. Gate-to-Source Voltage 1.9 50 1.8 1.7 40 1.6 Power (W) VGS(th) (V) 1.5 ID = 250 µA 1.4 1.3 1.2 30 20 1.1 1.0 10 0.9 0.8 - 50 - 25 0 25 50 75 100 125 0 0.001 150 0.01 TJ - Temperature (°C) Threshold Voltage 1 Time (s) 10 100 1000 Single Pulse Power 100 Limited by RDS(on)* 100 μs 10 ID - Drain Current (A) 0.1 1 ms 10 ms 1 100 ms 1s 10 s 0.1 DC TA = 25 °C BVDSS Limited 0.01 0.1 1 10 VDS - Drain-to-Source Voltage (V) * VGS > minimum VGS at which RDS(on) is specified 100 Safe Operating Area, Junction-to-Ambient Document Number: 63465 S11-2380 Rev. B, 28-Nov-11 www.vishay.com 5 This document is subject to change without notice. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000 New Product SiZ902DT Vishay Siliconix CHANNEL-1 TYPICAL CHARACTERISTICS (25 °C, unless otherwise noted) 30 50 25 20 30 Power (W) ID - Drain Current (A) 40 20 Package Limited 15 10 10 5 0 0 0 25 50 75 100 TC - Case Temperature (°C) Current Derating* 125 150 25 50 75 100 125 150 TC - Case Temperature (°C) Power, Junction-to-Case * The power dissipation PD is based on TJ(max) = 150 °C, using junction-to-case thermal resistance, and is more useful in settling the upper dissipation limit for cases where additional heatsinking is used. It is used to determine the current rating, when this rating falls below the package limit. www.vishay.com 6 Document Number: 63465 S11-2380 Rev. B, 28-Nov-11 This document is subject to change without notice. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000 New Product SiZ902DT Vishay Siliconix CHANNEL-1 TYPICAL CHARACTERISTICS (25 °C, unless otherwise noted) Normalized Effective Transient Thermal Impedance 1 Duty Cycle = 0.5 0.2 Notes: 0.1 PDM 0.1 0.05 t1 t2 1. Duty Cycle, D = 0.02 t1 t2 2. Per Unit Base = R thJA = 65 °C/W 3. T JM - TA = PDMZthJA(t) Single Pulse 4. Surface Mounted 0.01 0.0001 0.001 0.01 0.1 1 10 100 1000 Square Wave Pulse Duration (s) Normalized Effective Transient Thermal Impedance Normalized Thermal Transient Impedance, Junction-to-Ambient 1 Duty Cycle = 0.5 0.2 0.1 0.05 0.02 Single Pulse 0.1 0.0001 0.001 0.01 0.1 1 Square Wave Pulse Duration (s) Normalized Thermal Transient Impedance, Junction-to-Case Document Number: 63465 S11-2380 Rev. B, 28-Nov-11 www.vishay.com 7 This document is subject to change without notice. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000 New Product SiZ902DT Vishay Siliconix CHANNEL-2 TYPICAL CHARACTERISTICS (25 °C, unless otherwise noted) 20 80 VGS = 10 V thru 4 V 16 ID - Drain Current (A) ID - Drain Current (A) 60 VGS = 3 V 40 12 TC = 25 °C 8 20 TC = 125 °C 4 TC = - 55 °C 0 0 0.0 0.5 1.0 1.5 VDS - Drain-to-Source Voltage (V) 0.0 2.0 0.5 Output Characteristics 1.0 1.5 2.0 2.5 VGS - Gate-to-Source Voltage (V) 3.0 Transfer Characteristics 0.008 3500 Ciss C - Capacitance (pF) RDS(on) - On-Resistance (Ω) 3000 VGS = 4.5 V 0.007 0.006 VGS = 10 V 0.005 2500 2000 1500 1000 Coss Crss 500 0.004 0 20 40 ID - Drain Current (A) 60 0 80 0 5 10 15 20 25 VDS - Drain-to-Source Voltage (V) On-Resistance vs. Drain Current Capacitance 1.6 10 ID = 20 A RDS(on) - On-Resistance (Normalized) VDS = 7.5 V VGS - Gate-to-Source Voltage (V) 30 8 6 VDS = 15 V VDS = 24 V 4 2 0 0 9 18 27 36 Qg - Total Gate Charge (nC) Gate Charge www.vishay.com 8 45 ID = 20 A VGS = 10 V 1.4 VGS = 4.5 V 1.2 1.0 0.8 0.6 - 50 - 25 0 25 50 75 100 125 150 TJ - Junction Temperature (°C) On-Resistance vs. Junction Temperature Document Number: 63465 S11-2380 Rev. B, 28-Nov-11 This document is subject to change without notice. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000 New Product SiZ902DT Vishay Siliconix CHANNEL-2 TYPICAL CHARACTERISTICS (25 °C, unless otherwise noted) 100 0.016 0.014 ID = 20 A RDS(on) - On-Resistance (Ω) IS - Source Current (A) TJ = 150 °C 10 TJ = 25 °C 1 0.012 0.010 TJ = 125 °C 0.008 0.006 TJ = 25 °C 0.004 0.1 0.002 0.0 0.2 0.4 0.6 0.8 1.0 VSD - Source-to-Drain Voltage (V) 1.2 0 2 4 6 8 10 VGS - Gate-to-Source Voltage (V) Source-Drain Diode Forward Voltage On-Resistance vs. Gate-to-Source Voltage 2.0 50 1.8 40 Power (W) VGS(th) (V) 1.6 1.4 ID = 250 μA 30 20 1.2 10 1.0 0.8 - 50 - 25 0 25 50 75 100 TJ - Temperature (°C) 125 150 0 0.001 0.01 Threshold Voltage 0.1 1 Time (s) 10 100 1000 Single Pulse Power 1000 Limited by RDS(on)* ID - Drain Current (A) 100 100 μs 10 1 ms 10 ms 1 100 ms 1s 10 s TA = 25 °C 0.1 DC BVDSS Limited 0.01 0.1 1 10 100 VDS - Drain-to-Source Voltage (V) * VGS > minimum VGS at which RDS(on) is specified Safe Operating Area, Junction-to-Ambient Document Number: 63465 S11-2380 Rev. B, 28-Nov-11 www.vishay.com 9 This document is subject to change without notice. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000 New Product SiZ902DT Vishay Siliconix CHANNEL-2 TYPICAL CHARACTERISTICS (25 °C, unless otherwise noted) 100 80 80 60 Power (W) ID - Drain Current (A) 60 40 20 Package Limited 20 40 0 0 0 25 50 75 100 TC - Case Temperature (°C) Current Derating* 125 150 25 50 75 100 125 150 TC - Case Temperature (°C) Power, Junction-to-Case * The power dissipation PD is based on TJ(max) = 150 °C, using junction-to-case thermal resistance, and is more useful in settling the upper dissipation limit for cases where additional heatsinking is used. It is used to determine the current rating, when this rating falls below the package limit. www.vishay.com 10 Document Number: 63465 S11-2380 Rev. B, 28-Nov-11 This document is subject to change without notice. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000 New Product SiZ902DT Vishay Siliconix CHANNEL-2 TYPICAL CHARACTERISTICS (25 °C, unless otherwise noted) Normalized Effective Transient Thermal Impedance 1 Duty Cycle = 0.5 0.2 Notes: 0.1 PDM 0.1 t1 0.05 t2 1. Duty Cycle, D = t1 t2 2. Per Unit Base = R thJA = 57 °C/W 0.02 3. T JM - TA = PDMZthJA(t) 4. Surface Mounted Single Pulse 0.01 0.0001 0.001 0.01 0.1 1 10 100 1000 Square Wave Pulse Duration (s) Normalized Thermal Transient Impedance, Junction-to-Ambient 1 Normalized Effective Transient Thermal Impedance Duty Cycle = 0.5 0.2 0.1 0.05 0.02 Single Pulse 0.1 0.0001 0.001 0.01 0.1 Square Wave Pulse Duration (s) Normalized Thermal Transient Impedance, Junction-to-Case Vishay Siliconix maintains worldwide manufacturing capability. Products may be manufactured at one of several qualified locations. Reliability data for Silicon Technology and Package Reliability represent a composite of all qualified locations. For related documents such as package/tape drawings, part marking, and reliability data, see www.vishay.com/ppg?63465. Document Number: 63465 S11-2380 Rev. B, 28-Nov-11 www.vishay.com 11 This document is subject to change without notice. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000 Package Information www.vishay.com Vishay Siliconix PowerPAIR® 6 x 5 Case Outline Pin 7 Pin 6 Pin 5 Pin 5 Pin 6 Pin 7 Pin 8 K L Pin 8 b z L3 2X A D 0.10 C K1 E E1 D1 Pin 1 Pin 2 0.10 C Pin 3 Pin 4 Pin 3 Pin 4 2X E2 D1 Pin 2 Pin # 1 ident (optional) Pin 1 e Back side view Top side view 0.10 C A1 A3 b1 A C 0.08 C F F MILLIMETERS INCHES DIM. MIN. NOM. MAX. MIN. NOM. MAX. A 0.70 0.75 0.80 0.028 0.030 0.032 A1 0.00 - 0.10 0.000 - 0.004 A3 0.15 0.20 0.25 0.006 0.007 0.009 b 0.43 0.51 0.61 0.017 0.020 0.024 b1 0.25 BSC 0.010 BSC D 4.90 5.00 5.10 0.192 0.196 0.200 D1 3.75 3.80 3.85 0.148 0.150 0.152 E 5.90 6.00 6.10 0.232 0.236 0.240 E1 Option AA (for W/B) 2.62 2.67 2.72 0.103 0.105 0.107 E1 Option AB (for BWL) 2.42 2.47 2.52 0.095 0.097 0.099 E2 0.87 0.92 0.97 0.034 0.036 0.038 e 1.27 BSC 0.050 BSC 0.018 typ. K Option AA (for W/B) 0.45 typ. K Option AB (for BWL) 0.65 typ. 0.025 typ. K1 0.66 typ. 0.025 typ. L 0.33 0.43 0.53 0.013 0.017 L3 0.23 BSC 0.009 BSC z 0.34 BSC 0.013 BSC 0.020 ECN: T14-0782-Rev. C, 22-Dec-14 DWG: 6005 Revision: 22-Dec-14 1 Document Number: 63656 THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000 PAD Pattern www.vishay.com Vishay Siliconix Recommended Minimum PAD for PowerPAIR® 6 x 5 0.28 (0.011) 0.53 (0.021) 2.835 (0.112) 0.45 (0.018) 2.12 (0.083) 2.67 (0.105) 4 (0.157) (0, 0) 0.55 (0.022) 0.66 (0.026) 1.21 (0.048) 0.92 (0.036) 4 (0.157) 2.13 (0.084) 0.44 (0.017) 2.835 (0.112) 1.905 (0.075) Pin 1 0.53 (0.021) 1.27 (0.050) 0.66 (0.026) 0.61 (0.024) Dimensions in millimeters (inch) Note • Linear dimensions are in black, the same information is provided in ordinate dimensions which are in blue. Revision: 16-Feb-15 1 Document Number: 67480 THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. 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