New Product SiZ918DT Vishay Siliconix Dual N-Channel 30 V (D-S) MOSFETs FEATURES PRODUCT SUMMARY VDS (V) Channel-1 30 Channel-2 30 RDS(on) () (Max.) ID (A) 16 0.0145 at VGS = 4.5 V 16a 0.0037 at VGS = 10 V 28a 0.0045 at VGS = 4.5 V a 28 Qg (Typ.) a 0.0120 at VGS = 10 V 6.8 nC 32 nC • TrenchFET® Power MOSFETs • 100 % Rg and UIS Tested • Material categorization: For definitions of compliance please see www.vishay.com/doc?99912 APPLICATIONS • Notebook System Power • POL • Synchronous Buck Converter D1 PowerPAIR® 6 x 5 Pin 1 G1 1 5 mm D1 2 D1 G1 D1 3 D1 N-Channel 1 MOSFET 4 G2 S1/D2 Pin 9 8 S1/D2 S2 7 6 mm 6 G2 5 N-Channel 2 MOSFET Ordering Information: SiZ918DT-T1-GE3 (Lead (Pb)-free and Halogen-free) S2 ABSOLUTE MAXIMUM RATINGS (TA = 25 °C, unless otherwise noted) Parameter Symbol VDS VGS Drain-Source Voltage Gate-Source Voltage Continuous Drain Current (TJ = 150 °C) TC = 25 °C TC = 70 °C TA = 25 °C TA = 70 °C ID IDM Pulsed Drain Current (t = 300 µs) TC = 25 °C TA = 25 °C IS Single Pulse Avalanche Current Single Pulse Avalanche Energy L = 0.1 mH IAS EAS Maximum Power Dissipation TC = 25 °C TC = 70 °C TA = 25 °C TA = 70 °C PD Continuous Source Drain Diode Current Operating Junction and Storage Temperature Range Soldering Recommendations (Peak Temperature)d, e Channel-1 Channel-2 30 ± 20 V 16a 16a 28a 28a 14.3b, c 11.4b, c 50 16a 26a, b, c 21a, b, c 110 3.4 18 16 29 18 28a 4.3b, c 35 61 100 64 4.2b, c 2.7b, c 5.2b, c 3.3b, c b, c TJ, Tstg Unit - 55 to 150 260 A mJ W °C THERMAL RESISTANCE RATINGS Channel-1 Parameter Symbol Typ. Max. Channel-2 Typ. Max. Unit t 10 s RthJA 24 30 19 24 Maximum Junction-to-Ambientb, f °C/W RthJC Maximum Junction-to-Case (Drain) Steady State 3.4 4.3 1 1.25 Notes: a. Package limited. b. Surface mounted on 1" x 1" FR4 board. c. t = 10 s. d. See solder profile (www.vishay.com/doc?73257). The PowerPAIR is a leadless package. The end of the lead terminal is exposed copper (not plated) as a result of the singulation process in manufacturing. A solder fillet at the exposed copper tip cannot be guaranteed and is not required to ensure adequate bottom side solder interconnection. e. Rework conditions: manual soldering with a soldering iron is not recommended for leadless components. f. Maximum under steady state conditions is 65 °C/W for channel-1 and 55 °C/W for channel-2. Document Number: 63783 S12-0543 Rev. A, 12-Mar-12 For more information please contact: [email protected] www.vishay.com 1 This document is subject to change without notice. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000 New Product SiZ918DT Vishay Siliconix SPECIFICATIONS (TJ = 25 °C, unless otherwise noted) Parameter Symbol Test Conditions Min. Typ. Max. Unit Static VDS Drain-Source Breakdown Voltage VDS/TJ VDS Temperature Coefficient VGS(th)/TJ VGS(th) Temperature Coefficient VGS(th) Gate Threshold Voltage IGSS Gate Source Leakage IDSS Zero Gate Voltage Drain Current On-State Drain Currentb ID(on) Drain-Source On-State Resistanceb Forward Transconductanceb RDS(on) gfs VGS = 0 V, ID = 250 µA Ch-1 30 VGS = 0 V, ID = 250 µA Ch-2 30 ID = 250 µA Ch-1 ID = 250 µA Ch-2 37 ID = 250 µA Ch-1 -5 V 33 mV/°C ID = 250 µA Ch-2 VDS = VGS, ID = 250 µA Ch-1 1 2.2 VDS = VGS, ID = 250 µA Ch-2 1.2 2.2 - 7.5 Ch-1 ± 100 Ch-2 ± 100 VDS = 30 V, VGS = 0 V Ch-1 1 VDS = 30 V, VGS = 0 V Ch-2 1 VDS = 30 V, VGS = 0 V, TJ = 55 °C Ch-1 5 VDS = 0 V, VGS = ± 20 V VDS = 30 V, VGS = 0 V, TJ = 55 °C Ch-2 VDS 5 V, VGS = 10 V Ch-1 20 VDS 5 V, VGS = 10 V Ch-2 20 V nA µA 5 A VGS = 10 V, ID = 13.8 A Ch-1 0.0100 0.0120 VGS = 10 V, ID = 20 A Ch-2 0.0030 0.0037 VGS = 4.5 V, ID = 12.6 A Ch-1 0.0120 0.0145 VGS = 4.5 V, ID = 20 A Ch-2 0.0035 0.0045 VDS = 10 V, ID = 13.8 A Ch-1 47 VDS = 10 V, ID = 20 A Ch-2 116 S Dynamica Input Capacitance Ciss Output Capacitance Coss Reverse Transfer Capacitance Total Gate Charge Gate-Source Charge Gate-Drain Charge Gate Resistance Crss Qg Channel-1 VDS = 15 V, VGS = 0 V, f = 1 MHz Channel-2 VDS = 15 V, VGS = 0 V, f = 1 MHz Rg 790 Ch-2 3830 Ch-1 190 Ch-2 670 Ch-1 76 Ch-2 315 pF VDS = 15 V, VGS = 10 V, ID = 13.8 A Ch-1 14 21 VDS = 15 V, VGS = 10 V, ID = 20 A Ch-2 67.3 105 Ch-1 6.8 11 Channel-1 VDS = 15 V, VGS = 4.5 V, ID = 13.8 A Ch-2 32 48 Ch-1 2.6 Channel-2 VDS = 15 V, VGS = 4.5 V, ID = 20 A Ch-2 10.8 Ch-1 1.9 Qgs Qgd Ch-1 Ch-2 f = 1 MHz nC 9.3 Ch-1 0.4 2 4 Ch-2 0.2 1.1 2.2 Notes: a. Guaranteed by design, not subject to production testing. b. Pulse test; pulse width 300 µs, duty cycle 2 %. www.vishay.com 2 For more information please contact: [email protected] Document Number: 63783 S12-0543 Rev. A, 12-Mar-12 This document is subject to change without notice. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000 New Product SiZ918DT Vishay Siliconix SPECIFICATIONS (TJ = 25 °C, unless otherwise noted) Parameter Symbol Test Conditions Min. Typ. Max. Ch-1 15 30 Ch-2 30 60 Ch-1 12 20 Ch-2 33 65 Ch-1 20 40 Ch-2 40 80 Ch-1 10 20 Unit Dynamica td(on) Turn-On Delay Time tr Rise Time td(off) Turn-Off Delay Time tf Fall Time td(on) Turn-On Delay Time tr Rise Time Fall Time Channel-2 VDD = 15 V, RL = 1.5 ID 10 A, VGEN = 4.5 V, Rg = 1 Channel-1 VDD = 15 V, RL = 1.5 ID 10 A, VGEN = 10 V, Rg = 1 tf Channel-2 VDD = 15 V, RL = 1.5 ID 10 A, VGEN = 10 V, Rg = 1 IS TC = 25 °C td(off) Turn-Off Delay Time Channel-1 VDD = 15 V, RL = 1.5 ID 10 A, VGEN = 4.5 V, Rg = 1 Ch-2 12 25 Ch-1 10 20 Ch-2 15 30 Ch-1 12 20 Ch-2 22 25 Ch-1 20 40 Ch-2 40 80 Ch-1 10 20 Ch-2 10 20 ns Drain-Source Body Diode Characteristics Continuous Source-Drain Diode Current Pulse Diode Forward Currenta ISM VSD Body Diode Voltage Body Diode Reverse Recovery Time 28 Ch-1 50 Ch-2 0.85 1.2 IS = 10 A, VGS = 0 V Ch-2 0.8 1.2 Ch-1 20 40 Ch-2 30 60 Ch-1 10 20 Ch-2 21 40 Ch-1 11 Ch-2 17 Ch-1 9 Ch-2 13 Body Diode Reverse Recovery Charge Qrr Reverse Recovery Fall Time ta Channel-2 IF = 10 A, dI/dt = 100 A/µs, TJ = 25 °C A 110 Ch-1 trr tb 16 Ch-2 IS = 10 A, VGS = 0 V Channel-1 IF = 10 A, dI/dt = 100 A/µs, TJ = 25 °C Reverse Recovery Rise Time Ch-1 V ns nC ns Notes: a. Guaranteed by design, not subject to production testing. b. Pulse test; pulse width 300 µs, duty cycle 2 %. Stresses beyond those listed under “Absolute Maximum Ratings” may cause permanent damage to the device. These are stress ratings only, and functional operation of the device at these or any other conditions beyond those indicated in the operational sections of the specifications is not implied. Exposure to absolute maximum rating conditions for extended periods may affect device reliability. Document Number: 63783 S12-0543 Rev. A, 12-Mar-12 For more information please contact: [email protected] www.vishay.com 3 This document is subject to change without notice. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000 New Product SiZ918DT Vishay Siliconix CHANNEL-1 TYPICAL CHARACTERISTICS (25 °C, unless otherwise noted) 60 20 VGS = 10 V thru 4 V 16 I D - Drain Current (A) I D - Drain Current (A) 50 40 VGS = 3 V 30 20 12 TC = 25 °C 8 4 10 TC = 125 °C VGS = 2 V 0 0.0 0.5 1.0 1.5 2.0 2.5 TC = - 55 °C 0 0.0 3.0 0.5 VDS - Drain-to-Source Voltage (V) 1.0 1.5 2.0 2.5 3.0 3.5 VGS - Gate-to-Source Voltage (V) Output Characteristics Transfer Characteristics 1200 0.014 C - Capacitance (pF) R DS(on) - On-Resistance (Ω) 1000 0.012 VGS = 4.5 V 0.010 VGS = 10 V Ciss 800 600 400 Coss 0.008 200 Crss 0 0.006 0 10 20 30 40 50 0 60 5 ID - Drain Current (A) 10 15 20 25 VDS - Drain-to-Source Voltage (V) On-Resistance vs. Drain Current Capacitance 1.7 10 R DS(on) - On-Resistance (Normalized) ID = 13.8 A VGS - Gate-to-Source Voltage (V) 30 8 VDS = 15 V 6 VDS = 7.5 V VDS = 24 V 4 2 0 0 3 6 9 12 Qg - Total Gate Charge (nC) Gate Charge www.vishay.com 4 15 1.6 ID = 13.8 A 1.5 VGS = 10 V; 4.5 V 1.4 1.3 1.2 1.1 1.0 0.9 0.8 0.7 - 50 -- 25 0 25 50 75 100 TJ - Junction Temperature (°C) 125 150 On-Resistance vs. Junction Temperature For more information please contact: [email protected] Document Number: 63783 S12-0543 Rev. A, 12-Mar-12 This document is subject to change without notice. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000 New Product SiZ918DT Vishay Siliconix CHANNEL-1 TYPICAL CHARACTERISTICS (25 °C, unless otherwise noted) 0.030 100 ID = 13.8 A R DS(on) - On-Resistance (Ω) I S - Source Current (A) 0.025 10 TJ = 150 °C TJ = 25 °C 1 0.020 TJ = 125 °C 0.015 TJ = 25 °C 0.010 0.005 0.1 0.0 0.000 0.2 0.4 0.6 0.8 1.0 0 1.2 2 4 6 8 VGS - Gate-to-Source Voltage (V) VSD - Source-to-Drain Voltage (V) Source-Drain Diode Forward Voltage 10 On-Resistance vs. Gate-to-Source Voltage 1.9 50 1.8 1.7 40 1.6 Power (W) VGS(th) (V) 1.5 ID = 250 µA 1.4 1.3 1.2 30 20 1.1 1.0 10 0.9 0.8 - 50 - 25 0 25 50 75 100 125 0 0.001 150 0.01 0.1 TJ - Temperature (°C) Threshold Voltage 10 100 1000 Single Pulse Power 100 Limited by RDS(on)* 100 μs 10 ID - Drain Current (A) 1 Time (s) 1 ms 10 ms 1 100 ms 1s 10 s 0.1 DC TA = 25 °C BVDSS Limited 0.01 0.1 1 10 VDS - Drain-to-Source Voltage (V) * VGS > minimum VGS at which RDS(on) is specified 100 Safe Operating Area, Junction-to-Ambient Document Number: 63783 S12-0543 Rev. A, 12-Mar-12 For more information please contact: [email protected] www.vishay.com 5 This document is subject to change without notice. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000 New Product SiZ918DT Vishay Siliconix CHANNEL-1 TYPICAL CHARACTERISTICS (25 °C, unless otherwise noted) 50 30 25 20 30 20 Power (W) ID - Drain Current (A) 40 Package Limited 15 10 10 5 0 0 0 25 50 75 100 TC - Case Temperature (°C) Current Derating* 125 150 25 50 75 100 125 150 TC - Case Temperature (°C) Power, Junction-to-Case * The power dissipation PD is based on TJ(max) = 150 °C, using junction-to-case thermal resistance, and is more useful in settling the upper dissipation limit for cases where additional heatsinking is used. It is used to determine the current rating, when this rating falls below the package limit. www.vishay.com 6 For more information please contact: [email protected] Document Number: 63783 S12-0543 Rev. A, 12-Mar-12 This document is subject to change without notice. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000 New Product SiZ918DT Vishay Siliconix CHANNEL-1 TYPICAL CHARACTERISTICS (25 °C, unless otherwise noted) Normalized Effective Transient Thermal Impedance 1 Duty Cycle = 0.5 0.2 Notes: 0.1 PDM 0.1 0.05 t1 t2 1. Duty Cycle, D = 0.02 t1 t2 2. Per Unit Base = R thJA = 65 °C/W 3. T JM - TA = PDMZthJA(t) Single Pulse 4. Surface Mounted 0.01 0.0001 0.001 0.01 0.1 1 10 100 1000 Square Wave Pulse Duration (s) Normalized Effective Transient Thermal Impedance Normalized Thermal Transient Impedance, Junction-to-Ambient 1 Duty Cycle = 0.5 0.2 0.1 0.05 0.02 Single Pulse 0.1 0.0001 0.001 0.01 0.1 1 Square Wave Pulse Duration (s) Normalized Thermal Transient Impedance, Junction-to-Case Document Number: 63783 S12-0543 Rev. A, 12-Mar-12 For more information please contact: [email protected] www.vishay.com 7 This document is subject to change without notice. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000 New Product SiZ918DT Vishay Siliconix CHANNEL-2 TYPICAL CHARACTERISTICS (25 °C, unless otherwise noted) 20 100 VGS = 10 V thru 4 V 16 VGS = 3 V ID - Drain Current (A) ID - Drain Current (A) 80 60 40 12 TC = 25 °C 8 TC = 125 °C 20 4 0 0 TC = - 55 °C 0.0 0.5 1.0 1.5 VDS - Drain-to-Source Voltage (V) 0.0 2.0 0.5 1.0 1.5 2.0 2.5 VGS - Gate-to-Source Voltage (V) Transfer Characteristics 0.0045 5000 0.0040 4000 C - Capacitance (pF) RDS(on) - On-Resistance (Ω) Output Characteristics VGS = 4.5 V 0.0035 0.0030 3.0 VGS = 10 V Ciss 3000 2000 0.0025 1000 0.0020 0 Coss Crss 0 20 40 60 ID - Drain Current (A) 80 100 0 5 10 On-Resistance vs. Drain Current 20 25 30 Capacitance 1.8 10 ID = 20 A ID = 20 A VDS = 7.5 V RDS(on) - On-Resistance (Normalized) VGS - Gate-to-Source Voltage (V) 15 VDS - Drain-to-Source Voltage (V) 8 6 VDS = 15 V VDS = 24 V 4 2 0 0 20 40 60 Qg - Total Gate Charge (nC) Gate Charge www.vishay.com 8 80 VGS = 10 V 1.6 1.4 VGS = 4.5 V 1.2 1.0 0.8 0.6 - 50 - 25 0 25 50 75 100 125 150 TJ - Junction Temperature (°C) On-Resistance vs. Junction Temperature For more information please contact: [email protected] Document Number: 63783 S12-0543 Rev. A, 12-Mar-12 This document is subject to change without notice. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000 New Product SiZ918DT Vishay Siliconix CHANNEL-2 TYPICAL CHARACTERISTICS (25 °C, unless otherwise noted) 0.010 100 ID = 20 A RDS(on) - On-Resistance (Ω) IS - Source Current (A) 0.008 TJ = 150 °C 10 TJ = 25 °C 1 0.1 0.0 0.006 TJ = 125 °C 0.004 TJ = 25 °C 0.002 0.000 0.2 0.4 0.6 0.8 1.0 VSD - Source-to-Drain Voltage (V) 1.2 0 2 4 6 8 10 VGS - Gate-to-Source Voltage (V) Source-Drain Diode Forward Voltage On-Resistance vs. Gate-to-Source Voltage 2.4 100 2.2 80 2.0 Power (W) VGS(th) (V) 1.8 1.6 1.4 ID = 250 μA 1.2 1.0 60 40 20 0.8 0.6 - 50 - 25 0 25 50 75 100 125 0 0.001 150 TJ - Temperature (°C) 0.01 0.1 1 Time (s) 10 Threshold Voltage Single Pulse Power 100 1000 1000 Limited by RDS(on)* ID - Drain Current (A) 100 1 ms 10 10 ms 1 100 ms 1s TA = 25 °C 0.1 10 s DC BVDSS Limited 0.01 0.01 0.1 1 10 100 VDS - Drain-to-Source Voltage (V) * VGS > minimum VGS at which RDS(on) is specified Safe Operating Area, Junction-to-Ambient Document Number: 63783 S12-0543 Rev. A, 12-Mar-12 For more information please contact: [email protected] www.vishay.com 9 This document is subject to change without notice. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000 New Product SiZ918DT Vishay Siliconix CHANNEL-2 TYPICAL CHARACTERISTICS (25 °C, unless otherwise noted) 140 100 120 Power (W) ID - Drain Current (A) 80 100 80 60 40 60 40 Package Limited 20 20 0 0 0 25 50 75 100 TC - Case Temperature (°C) Current Derating* 125 150 25 50 75 100 125 TC - Case Temperature (°C) 150 Power, Junction-to-Case * The power dissipation PD is based on TJ(max.) = 150 °C, using junction-to-case thermal resistance, and is more useful in settling the upper dissipation limit for cases where additional heatsinking is used. It is used to determine the current rating, when this rating falls below the package limit. www.vishay.com 10 For more information please contact: [email protected] Document Number: 63783 S12-0543 Rev. A, 12-Mar-12 This document is subject to change without notice. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000 New Product SiZ918DT Vishay Siliconix CHANNEL-2 TYPICAL CHARACTERISTICS (25 °C, unless otherwise noted) Normalized Effective Transient Thermal Impedance 1 Duty Cycle = 0.5 0.2 Notes: 0.1 PDM 0.1 0.05 t1 t2 1. Duty Cycle, D = 0.02 2. Per Unit Base = R thJA = 55 °C/W 3. T JM - TA = PDMZthJA(t) Single Pulse 0.01 0.0001 t1 t2 0.001 4. Surface Mounted 0.01 0.1 1 10 100 1000 Square Wave Pulse Duration (s) Normalized Thermal Transient Impedance, Junction-to-Ambient 1 Normalized Effective Transient Thermal Impedance Duty Cycle = 0.5 0.2 0.1 0.05 0.02 Single Pulse 0.1 0.0001 0.001 0.01 0.1 Square Wave Pulse Duration (s) Normalized Thermal Transient Impedance, Junction-to-Case Vishay Siliconix maintains worldwide manufacturing capability. Products may be manufactured at one of several qualified locations. Reliability data for Silicon Technology and Package Reliability represent a composite of all qualified locations. For related documents such as package/tape drawings, part marking, and reliability data, see www.vishay.com/ppg?63783. Document Number: 63783 S12-0543 Rev. A, 12-Mar-12 For more information please contact: [email protected] www.vishay.com 11 This document is subject to change without notice. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000 Package Information www.vishay.com Vishay Siliconix PowerPAIR® 6 x 5 Case Outline Pin 7 Pin 6 Pin 5 Pin 5 Pin 6 Pin 7 Pin 8 K L Pin 8 b z L3 2X A D 0.10 C K1 E E1 D1 Pin 1 Pin 2 0.10 C Pin 3 Pin 4 Pin 3 Pin 4 2X E2 D1 Pin 2 Pin # 1 ident (optional) Pin 1 e Back side view Top side view 0.10 C A1 A3 b1 A C 0.08 C F F MILLIMETERS INCHES DIM. MIN. NOM. MAX. MIN. NOM. MAX. A 0.70 0.75 0.80 0.028 0.030 0.032 A1 0.00 - 0.10 0.000 - 0.004 A3 0.15 0.20 0.25 0.006 0.007 0.009 b 0.43 0.51 0.61 0.017 0.020 0.024 b1 0.25 BSC 0.010 BSC D 4.90 5.00 5.10 0.192 0.196 0.200 D1 3.75 3.80 3.85 0.148 0.150 0.152 E 5.90 6.00 6.10 0.232 0.236 0.240 E1 Option AA (for W/B) 2.62 2.67 2.72 0.103 0.105 0.107 E1 Option AB (for BWL) 2.42 2.47 2.52 0.095 0.097 0.099 E2 0.87 0.92 0.97 0.034 0.036 0.038 e 1.27 BSC 0.050 BSC 0.018 typ. K Option AA (for W/B) 0.45 typ. K Option AB (for BWL) 0.65 typ. 0.025 typ. K1 0.66 typ. 0.025 typ. L 0.33 0.43 0.53 0.013 0.017 L3 0.23 BSC 0.009 BSC z 0.34 BSC 0.013 BSC 0.020 ECN: T14-0782-Rev. C, 22-Dec-14 DWG: 6005 Revision: 22-Dec-14 1 Document Number: 63656 THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000 PAD Pattern www.vishay.com Vishay Siliconix Recommended Minimum PAD for PowerPAIR® 6 x 5 0.28 (0.011) 0.53 (0.021) 2.835 (0.112) 0.45 (0.018) 2.12 (0.083) 2.67 (0.105) 4 (0.157) (0, 0) 0.55 (0.022) 0.66 (0.026) 1.21 (0.048) 0.92 (0.036) 4 (0.157) 2.13 (0.084) 0.44 (0.017) 2.835 (0.112) 1.905 (0.075) Pin 1 0.53 (0.021) 1.27 (0.050) 0.66 (0.026) 0.61 (0.024) Dimensions in millimeters (inch) Note • Linear dimensions are in black, the same information is provided in ordinate dimensions which are in blue. Revision: 16-Feb-15 1 Document Number: 67480 THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000 Legal Disclaimer Notice www.vishay.com Vishay Disclaimer ALL PRODUCT, PRODUCT SPECIFICATIONS AND DATA ARE SUBJECT TO CHANGE WITHOUT NOTICE TO IMPROVE RELIABILITY, FUNCTION OR DESIGN OR OTHERWISE. Vishay Intertechnology, Inc., its affiliates, agents, and employees, and all persons acting on its or their behalf (collectively, “Vishay”), disclaim any and all liability for any errors, inaccuracies or incompleteness contained in any datasheet or in any other disclosure relating to any product. Vishay makes no warranty, representation or guarantee regarding the suitability of the products for any particular purpose or the continuing production of any product. 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No license, express or implied, by estoppel or otherwise, to any intellectual property rights is granted by this document or by any conduct of Vishay. Product names and markings noted herein may be trademarks of their respective owners. Material Category Policy Vishay Intertechnology, Inc. hereby certifies that all its products that are identified as RoHS-Compliant fulfill the definitions and restrictions defined under Directive 2011/65/EU of The European Parliament and of the Council of June 8, 2011 on the restriction of the use of certain hazardous substances in electrical and electronic equipment (EEE) - recast, unless otherwise specified as non-compliant. Please note that some Vishay documentation may still make reference to RoHS Directive 2002/95/EC. We confirm that all the products identified as being compliant to Directive 2002/95/EC conform to Directive 2011/65/EU. Vishay Intertechnology, Inc. hereby certifies that all its products that are identified as Halogen-Free follow Halogen-Free requirements as per JEDEC JS709A standards. Please note that some Vishay documentation may still make reference to the IEC 61249-2-21 definition. We confirm that all the products identified as being compliant to IEC 61249-2-21 conform to JEDEC JS709A standards. Revision: 02-Oct-12 1 Document Number: 91000