Si4204DY Vishay Siliconix Dual N-Channel 20 V MOSFET FEATURES PRODUCT SUMMARY VDS (V) 20 RDS(on) (Ω) ID (A) 0.0046 at VGS = 10 V 19.8a 0.006 at VGS = 4.5 V 17.3a • Halogen-free According to IEC 61249-2-21 Definition • TrenchFET® Power MOSFET • 100 % Rg Tested • 100 % UIS Tested • Compliant to RoHS Directive 2002/95/EC Qg (Typ.) 14.5 APPLICATIONS SO-8 S1 1 8 D1 G1 2 7 D1 S2 3 6 D2 G2 4 5 D2 D1 D2 • DC/DC Converter • Fixed Telecom • Notebook PC G1 G2 Top View Ordering Information: Si4204DY-T1-GE3 (Lead (Pb)-free and Halogen-free) S1 S2 N-Channel MOSFET N-Channel MOSFET ABSOLUTE MAXIMUM RATINGS TA = 25 °C, unless otherwise noted Parameter Symbol Limit Drain-Source Voltage VDS 20 Gate-Source Voltage VGS ± 20 Continuous Drain Current (TJ = 150 °C) TC = 25 °C 19.8 TC = 70 °C 15.9 ID TA = 25 °C 12.2b, c Pulsed Drain Current (10 µs Pulse Width) IDM TC = 25 °C 50 1.6b, c Pulsed Source-Drain Current ISM 50 Single Pulse Avalanche Current IAS 20 EAS 20 L = 0.1 mH Maximum Power Dissipation TC = 25 °C 3.25 TC = 70 °C 2.10 PD TA = 25 °C A 2.7 IS TA = 25 °C Single Pulse Avalanche Energy V 15.5b, c TA = 70 °C Source-Drain Current Diode Current Unit W 2.0b, c 1.25b, c TA = 70 °C Operating Junction and Storage Temperature Range TJ, Tstg - 55 to 150 °C THERMAL RESISTANCE RATINGS Symbol Typ. Max. Maximum Junction-to-Ambientb, d Parameter t ≤ 10 s RthJA 45 62.5 Maximum Junction-to-Foot (Drain) Steady-State RthJF 29 38 Unit °C/W Notes: a. Based on TC = 25 °C. b. Surface mounted on 1" x 1" FR4 board. c. t = 10 s. d. Maximum under steady state conditions is 120 °C/W. Document Number: 65154 S10-1042-Rev. A, 03-May-10 www.vishay.com 1 Si4204DY Vishay Siliconix SPECIFICATIONS TJ = 25 °C, unless otherwise noted Parameter Symbol Test Conditions Min. 20 Typ. Max. Unit Static VDS VGS = 0 V, ID = 250 µA ΔVDS/TJ ID = 250 µA 20 ΔVGS(th)/TJ ID = 250 µA - 5.8 VGS(th) VDS = VGS, ID = 250 µA IGSS Drain-Source Breakdown Voltage VDS Temperature Coefficient VGS(th) Temperature Coefficient Gate Threshold Voltage Gate-Body Leakage Zero Gate Voltage Drain Current IDSS On-State Drain Currentb ID(on) Drain-Source On-State Resistanceb Forward Transconductanceb RDS(on) gfs V 2.4 V VDS = 0 V, VGS = ± 20 V 100 nA VDS = 20 V, VGS = 0 V 1 VDS = 20 V, VGS = 0 V, TJ = 55 °C 10 VDS = 5 V, VGS = 10 V 1.0 mV/°C 20 µA A VGS = 10 V, ID = 10 A 0.0038 0.0046 VGS = 4.5 V, ID = 8 A 0.0047 0.0060 VDS = 15 V, ID = 10 A 50 Ω S Dynamica Input Capacitance Ciss Output Capacitance Coss Reverse Transfer Capacitance Crss Total Gate Charge Qg Gate-Source Charge Qgs Gate-Drain Charge Qgd Gate Resistance Turn-On Delay Time Rise Time Turn-Off Delay Time Fall Time Turn-On Delay Time Rise Time Turn-Off Delay Time Fall Time Rg 2110 VDS = 10 V, VGS = 0 V, ID = 1 MHz pF 235 VDS = 10 V, VGS = 10 V, ID = 10 A VDS = 10 V, VGS = 4.5 V, ID = 10 A 30 45 14.5 22 4.5 f = 1 MHz VDD = 10 V, RL = 1 Ω ID ≅ 10 A, VGEN = 10 V, Rg = 1 Ω 0.4 1.4 2.8 8 16 15 30 24 45 tf 9 18 td(on) 18 35 24 45 26 50 13 26 td(off) tr td(off) nC 3.9 td(on) tr 926 VDD = 10 V, RL = 1 Ω ID ≅ 10 A, VGEN = 4.5 V, Rg = 1 Ω tf Ω ns Drain-Source Body Diode Characteristics Continuous Source-Drain Diode Current IS Pulse Diode Forward Currenta ISM Body Diode Voltage VSD TC = 25 °C 2.7 50 IS = 3 A 0.70 1.2 A V Body Diode Reverse Recovery Time trr 20 40 ns Body Diode Reverse Recovery Charge Qrr 10 20 nC Reverse Recovery Fall Time ta Reverse Recovery Rise Time tb N-Channel IF = 10 A, dI/dt = 100 A/µs, TJ = 25 °C 11 9 nS Stresses beyond those listed under “Absolute Maximum Ratings” may cause permanent damage to the device. These are stress ratings only, and functional operation of the device at these or any other conditions beyond those indicated in the operational sections of the specifications is not implied. Exposure to absolute maximum rating conditions for extended periods may affect device reliability. www.vishay.com 2 Document Number: 65154 S10-1042-Rev. A, 03-May-10 Si4204DY Vishay Siliconix TYPICAL CHARACTERISTICS 25 °C, unless otherwise noted 50 10 VGS = 10 V thru 3 V 8 I D - Drain Current (A) I D - Drain Current (A) 40 30 20 10 6 4 TC = 25 °C 2 TC = 125 °C VGS = 2 V 0 0.0 TC = - 55 °C 0 0.5 1.0 1.5 2.0 2.5 0 1 2 3 4 5 VGS - Gate-to-Source Voltage (V) VDS - Drain-to-Source Voltage (V) Output Characteristics Transfer Characteristics 0.0060 2500 0.0054 2000 C - Capacitance (pF) R DS(on) - On-Resistance (Ω) Ciss VGS = 4.5 V 0.0048 0.0042 VGS = 10 V 1500 1000 Coss 0.0036 500 Crss 0.0030 0 0 10 20 30 40 50 0 5 ID - Drain Current (A) 15 20 VDS - Drain-to-Source Voltage (V) On-Resistance vs. Drain Current and Gate Voltage Capacitance 1.8 10 ID = 10 A ID = 10 A 1.6 8 VDS = 5 V 6 VDS = 10 V 4 VDS = 15 V 2 1.4 (Normalized) R DS(on) - On-Resistance VGS - Gate-to-Source Voltage (V) 10 VGS = 10 V 1.2 VGS = 4.5 V 1.0 0.8 0 0 7 14 21 28 35 0.6 - 50 - 25 0 25 50 75 100 125 150 Qg - Total Gate Charge (nC) TJ - Junction Temperature (°C) Gate Charge On-Resistance vs. Junction Temperature Document Number: 65154 S10-1042-Rev. A, 03-May-10 www.vishay.com 3 Si4204DY Vishay Siliconix TYPICAL CHARACTERISTICS 25 °C, unless otherwise noted 100 0.020 10 0.016 R DS(on) - On-Resistance (Ω) I S - Source Current (A) ID = 10 A TJ = 150 °C 1 TJ = 25 °C 0.1 0.01 0.012 0.008 TJ = 125 °C 0.004 TJ = 25 °C 0.001 0.0 0.000 0.2 0.4 0.6 0.8 1.0 0 1.2 1 2 4 5 6 7 8 9 10 VGS - Gate-to-Source Voltage (V) VSD - Source-to-Drain Voltage (V) On-Resistance vs. Gate-to-Source Voltage Source-Drain Diode Forward Voltage 0.5 50 0.2 40 - 0.1 Power (W) VGS(th) Variance (V) 3 ID = 5 mA - 0.4 30 20 ID = 250 µA - 0.7 - 1.0 - 50 10 - 25 0 25 50 75 100 125 0 0.001 150 0.01 0.1 1 10 Time (s) TJ - Temperature (°C) Single Pulse Power, Junction-to-Ambient Threshold Voltage 100 Limited by RDS(on)* I D - Drain Current (A) 10 1 ms 10 ms 1 100 ms 1s 10 s 0.1 TA = 25 °C Single Pulse 0.01 0.01 0.1 DC BVDSS Limited 1 10 100 VDS - Drain-to-Source Voltage (V) * VGS > minimum VGS at which RDS(on) is specified Safe Operating Area, Junction-to-Ambient www.vishay.com 4 Document Number: 65154 S10-1042-Rev. A, 03-May-10 Si4204DY Vishay Siliconix TYPICAL CHARACTERISTICS 25 °C, unless otherwise noted 25 I D - Drain Current (A) 20 15 10 5 0 0 25 50 75 100 125 150 TC - Case Temperature (°C) 4.0 1.5 3.2 1.2 2.4 0.9 Power (W) Power (W) Current Derating* 1.6 0.8 0.6 0.3 0.0 0.0 0 25 50 75 100 125 TC - Case Temperature (°C) Power Derating, Junction-to-Foot 150 0 25 50 75 100 125 150 TA - Ambient Temperature (°C) Power Derating, Junction-to-Ambient * The power dissipation PD is based on TJ(max) = 150 °C, using junction-to-case thermal resistance, and is more useful in settling the upper dissipation limit for cases where additional heatsinking is used. It is used to determine the current rating, when this rating falls below the package limit. Document Number: 65154 S10-1042-Rev. A, 03-May-10 www.vishay.com 5 Si4204DY Vishay Siliconix TYPICAL CHARACTERISTICS 25 °C, unless otherwise noted 1 Normalized Effective Transient Thermal Impedance Duty Cycle = 0.5 0.2 0.1 Notes: 0.1 PDM 0.05 t1 t2 1. Duty Cycle, D = 0.02 t1 t2 2. Per Unit Base = RthJA = 120 °C/W 3. TJM - TA = PDMZthJA(t) Single Pulse 0.01 10 -4 10 -3 4. Surface Mounted 10 -2 10 -1 10 1 100 1000 Square Wave Pulse Duration (s) Normalized Thermal Transient Impedance, Junction-to-Ambient 1 Normalized Effective Transient Thermal Impedance Duty Cycle = 0.5 0.2 0.1 0.1 0.05 0.02 Single Pulse 0.01 10 -4 10 -3 10 -2 10 -1 1 10 Square Wave Pulse Duration (s) Normalized Thermal Transient Impedance, Junction-to-Foot Vishay Siliconix maintains worldwide manufacturing capability. Products may be manufactured at one of several qualified locations. Reliability data for Silicon Technology and Package Reliability represent a composite of all qualified locations. For related documents such as package/tape drawings, part marking, and reliability data, see www.vishay.com/ppg?65154. www.vishay.com 6 Document Number: 65154 S10-1042-Rev. A, 03-May-10 Package Information Vishay Siliconix SOIC (NARROW): 8-LEAD JEDEC Part Number: MS-012 8 6 7 5 E 1 3 2 H 4 S h x 45 D C 0.25 mm (Gage Plane) A e B All Leads q A1 L 0.004" MILLIMETERS INCHES DIM Min Max Min Max A 1.35 1.75 0.053 0.069 A1 0.10 0.20 0.004 0.008 B 0.35 0.51 0.014 0.020 C 0.19 0.25 0.0075 0.010 D 4.80 5.00 0.189 0.196 E 3.80 4.00 0.150 e 0.101 mm 1.27 BSC 0.157 0.050 BSC H 5.80 6.20 0.228 0.244 h 0.25 0.50 0.010 0.020 L 0.50 0.93 0.020 0.037 q 0° 8° 0° 8° S 0.44 0.64 0.018 0.026 ECN: C-06527-Rev. I, 11-Sep-06 DWG: 5498 Document Number: 71192 11-Sep-06 www.vishay.com 1 Application Note 826 Vishay Siliconix RECOMMENDED MINIMUM PADS FOR SO-8 0.172 (4.369) 0.028 0.022 0.050 (0.559) (1.270) 0.152 (3.861) 0.047 (1.194) 0.246 (6.248) (0.711) Recommended Minimum Pads Dimensions in Inches/(mm) Return to Index APPLICATION NOTE Return to Index www.vishay.com 22 Document Number: 72606 Revision: 21-Jan-08 Legal Disclaimer Notice www.vishay.com Vishay Disclaimer ALL PRODUCT, PRODUCT SPECIFICATIONS AND DATA ARE SUBJECT TO CHANGE WITHOUT NOTICE TO IMPROVE RELIABILITY, FUNCTION OR DESIGN OR OTHERWISE. Vishay Intertechnology, Inc., its affiliates, agents, and employees, and all persons acting on its or their behalf (collectively, “Vishay”), disclaim any and all liability for any errors, inaccuracies or incompleteness contained in any datasheet or in any other disclosure relating to any product. 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We confirm that all the products identified as being compliant to Directive 2002/95/EC conform to Directive 2011/65/EU. Vishay Intertechnology, Inc. hereby certifies that all its products that are identified as Halogen-Free follow Halogen-Free requirements as per JEDEC JS709A standards. Please note that some Vishay documentation may still make reference to the IEC 61249-2-21 definition. We confirm that all the products identified as being compliant to IEC 61249-2-21 conform to JEDEC JS709A standards. Revision: 02-Oct-12 1 Document Number: 91000