Si4288DY Datasheet

Si4288DY
Vishay Siliconix
Dual N-Channel 40 V (D-S) MOSFET
FEATURES
PRODUCT SUMMARY
VDS (V)
40
RDS(on) ()
ID (A)a
0.020 at VGS = 10 V
9.2
0.023 at VGS = 4.5 V
8.6
• Halogen-free According to IEC 61249-2-21
Definition
• TrenchFETPower MOSFET
• 100 % Rg and UIS Tested
• Compliant to RoHS Directive 2002/95/EC
Qg (Typ.)
4.9
APPLICATIONS
• CCFL Inverter
• DC/DC Converter
• HDD
D1
D2
SO-8
S1
1
8
D1
G1
2
7
D1
S2
3
6
D2
G2
4
5
D2
G1
G2
Top View
Ordering Information: Si4288DY-T1-GE3 (Lead (Pb)-free and Halogen-free)
S1
S2
N-Channel MOSFET
N-Channel MOSFET
ABSOLUTE MAXIMUM RATINGS (TA = 25 °C, unless otherwise noted)
Parameter
Drain-Source Voltage
Gate-Source Voltage
Continuous Drain Current (TJ = 150 °C)
Symbol
VDS
VGS
TC = 25 °C
TC = 70 °C
TA = 25 °C
TA = 70 °C
ID
Pulsed Drain Current (10 µs Pulse Width)
Source-Drain Current Diode Current
Pulsed Source-Drain Current
Single Pulse Avalanche Current
Single Pulse Avalanche Energy
Maximum Power Dissipation
Limit
40
± 20
9.2
7.4
IS
TC = 25 °C
TC = 70 °C
TA = 25 °C
TA = 70 °C
Operating Junction and Storage Temperature Range
A
1.6b, c
50
10
5
3.1
2
ISM
IAS
EAS
L = 0.1 mH
V
7.4b, c
5.9b, c
50
2.6
IDM
TC = 25 °C
TA = 25 °C
Unit
PD
W
2b, c
1.28b, c
- 55 to 150
TJ, Tstg
°C
THERMAL RESISTANCE RATINGS
Parameter
Maximum Junction-to-Ambientb, d
Maximum Junction-to-Foot (Drain)
t  10 s
Steady-State
Symbol
RthJA
RthJF
Typ.
49
30
Max.
62.5
40
Unit
°C/W
Notes:
a. Based on TC = 25 °C.
b. Surface mounted on 1" x 1" FR4 board.
c. t = 10 s.
d. Maximum under steady state conditions is 120 °C/W.
Document Number: 67078
S10-2768-Rev. A, 29-Nov-10
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Si4288DY
Vishay Siliconix
SPECIFICATIONS (TJ = 25 °C, unless otherwise noted)
Parameter
Symbol
Test Conditions
Min.
VDS
VGS = 0 V, ID = 250 µA
40
Typ.a
Max.
Unit
Static
Drain-Source Breakdown Voltage
VDS/TJ
VDS Temperature Coefficient
VGS(th) Temperature Coefficient
VGS(th)/TJ
Gate Threshold Voltage
Gate-Body Leakage
VDS = VGS, ID= 250 µA
IGSS
Zero Gate Voltage Drain Current
IDSS
On-State Drain Currentb
ID(on)
Drain-Source On-State Resistanceb
Forward Transconductanceb
ID = 250 µA
VGS(th)
RDS(on)
gfs
V
49
mV/°C
- 5.2
2.5
V
VDS = 0 V, VGS = ± 20 V
100
nA
VDS = 40 V, VGS = 0 V
1
VDS = 40 V, VGS = 0 V, TJ = 55 °C
10
VDS = 5 V, VGS = 10 V
1.2
20
µA
A
VGS = 10 V, ID = 10 A
0.0165
0.0200
VGS = 4.5 V, ID = 7 A
0.019
0.023
VDS = 15 V, ID = 10 A
35
VDS = 20 V, VGS = 0 V, ID = 1 MHz
100
VDS = 20 V, VGS = 10 V, ID = 10 A
10
15
4.9
7.4

S
Dynamica
Input Capacitance
Ciss
Output Capacitance
Coss
Reverse Transfer Capacitance
Crss
Total Gate Charge
Qg
Gate-Source Charge
Qgs
Gate-Drain Charge
Qgd
Gate Resistance
Turn-On Delay Time
Rise Time
Turn-Off Delay Time
Fall Time
Turn-On Delay Time
Rise Time
Turn-Off Delay Time
Fall Time
Rg
580
42
VDS = 20 V, VGS = 4.5 V, ID = 10 A
td(off)
1.5
f = 1 MHz
VDD = 20 V, RL = 2 
ID  10 A, VGEN = 10 V, Rg = 1 
0.6
2.7
5.4
7
14
9
18
16
32
tf
8
16
td(on)
12
24
10
20
tr
td(off)
nC
1.5
td(on)
tr
pF
VDD = 20 V, RL = 2 
ID  10 A, VGEN = 4.5 V, Rg = 1 
tf
13
26
8
16

ns
Drain-Source Body Diode Characteristics
Continuous Source-Drain Diode Current
IS
Pulse Diode Forward Currenta
ISM
Body Diode Voltage
VSD
Body Diode Reverse Recovery Time
trr
Body Diode Reverse Recovery Charge
Qrr
Reverse Recovery Fall Time
ta
Reverse Recovery Rise Time
tb
TC = 25 °C
2.6
50
IS = 3 A
IF = 5 A, dI/dt = 100 A/µs, TJ = 25 °C
A
0.77
1.2
V
15
30
ns
7.5
15
nC
9
6
ns
Notes:
a. Guaranteed by design, not subject to production testing.
b. Pulse test; pulse width  300 µs, duty cycle  2 %.
Stresses beyond those listed under “Absolute Maximum Ratings” may cause permanent damage to the device. These are stress ratings only, and functional operation
of the device at these or any other conditions beyond those indicated in the operational sections of the specifications is not implied. Exposure to absolute maximum
rating conditions for extended periods may affect device reliability.
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Document Number: 67078
S10-2768-Rev. A, 29-Nov-10
Si4288DY
Vishay Siliconix
TYPICAL CHARACTERISTICS (25 °C, unless otherwise noted)
10
50
V GS = 10 V thru 4 V
8
ID - Drain Current (A)
ID - Drain Current (A)
40
30
20
V GS = 3 V
6
4
T C = 25 °C
2
10
T C = 125 °C
V GS = 2 V
0.5
1.0
1.5
2.0
T C = - 55 °C
0
0
2.5
1
2
3
4
VDS - Drain-to-Source Voltage (V)
VGS - Gate-to-Source Voltage (V)
Output Characteristics
Transfer Characteristics
0.025
750
0.022
600
5
Ciss
C - Capacitance (pF)
RDS(on) - On-Resistance (Ω)
0
0.0
V GS = 4.5 V
0.019
V GS = 10 V
0.016
450
300
0.013
150
0.010
0
Coss
Crss
0
10
20
30
40
50
0
24
32
ID - Drain Current (A)
VDS - Drain-to-Source Voltage (V)
Capacitance
40
2.0
ID = 8 A
ID = 10 A
V GS = 10 V
1.7
V DS = 20 V
6
V DS = 10 V
V DS = 30 V
4
(Normalized)
8
RDS(on) - On-Resistance
VGS - Gate-to-Source Voltage (V)
16
On-Resistance vs. Drain Current
10
1.4
V GS = 4.5 V
1.1
0.8
2
0
0.0
8
2.1
4.2
6.3
Qg - Total Gate Charge (nC)
Gate Charge
Document Number: 67078
S10-2768-Rev. A, 29-Nov-10
8.4
10.5
0.5
- 50
- 25
0
25
50
75
100
125
150
TJ - Junction Temperature (°C)
On-Resistance vs. Junction Temperature
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Si4288DY
Vishay Siliconix
TYPICAL CHARACTERISTICS (25 °C, unless otherwise noted)
100
0.080
10
0.064
RDS(on) - On-Resistance (Ω)
IS - Source Current (A)
ID = 10 A
T J = 150 °C
1
0.1
T J = 25 °C
T J = 125 °C
0.032
T J = 25 °C
0.016
0.01
0.001
0.0
0.048
0.000
0.2
0.4
0.6
0.8
1.0
0
1.2
1
2
3
4
5
6
7
8
9
10
VSD - Source-to-Drain Voltage (V)
VGS - Gate-to-Source Voltage (V)
Source-Drain Diode Forward Voltage
On-Resistance vs. Gate-to-Source Voltage
0.4
50
0.2
0.0
Power (W)
VGS(th) Variance (V)
40
- 0.2
ID = 5 mA
30
20
- 0.4
ID = 250 μA
10
- 0.6
- 0.8
- 50
- 25
0
25
50
75
100
125
0
0.001
150
0.01
TJ - Temperature (°C)
0.1
1
10
Time (s)
Single Pulse Power, Junction-to-Ambient
Threshold Voltage
100
Limited by RDS(on)*
ID - Drain Current (A)
10
1 ms
1
10 ms
100 ms
0.1
TA = 25 °C
Single Pulse
0.01
0.01
BVDSS Limited
1s
10 s
DC
100
0.1
1
10
VDS - Drain-to-Source Voltage (V)
* VGS > minimum VGS at which RDS(on) is specified
Safe Operating Area
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Document Number: 67078
S10-2768-Rev. A, 29-Nov-10
Si4288DY
Vishay Siliconix
TYPICAL CHARACTERISTICS (25 °C, unless otherwise noted)
10
ID - Drain Current (A)
8
6
4
2
0
0
25
50
75
100
125
150
TC - Case Temperature (°C)
4.0
1.5
3.2
1.2
2.4
0.9
Power (W)
Power (W)
Current Derating*
1.6
0.6
0.3
0.8
0.0
0.0
0
25
50
75
100
125
TC - Case Temperature (°C)
Power Derating, Junction-to-Foot
150
0
25
50
75
100
125
150
TA - Ambient Temperature (°C)
Power Derating, Junction-to-Ambient
* The power dissipation PD is based on TJ(max) = 150 °C, using junction-to-case thermal resistance, and is more useful in settling the upper
dissipation limit for cases where additional heatsinking is used. It is used to determine the current rating, when this rating falls below the package
limit.
Document Number: 67078
S10-2768-Rev. A, 29-Nov-10
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Si4288DY
Vishay Siliconix
TYPICAL CHARACTERISTICS (25 °C, unless otherwise noted)
1
Normalized Effective Transient
Thermal Impedance
Duty Cycle = 0.5
0.2
Notes:
0.1
0.1
PDM
0.05
t1
t2
1. Duty Cycle, D =
0.02
t1
t2
2. Per Unit Base = R thJA = 120 °C/W
3. T JM - TA = PDMZthJA(t)
0.01
10 -4
Single Pulse
10 -3
4. Surface Mounted
10 -2
10 -1
1
100
10
1000
Square Wave Pulse Duration (s)
Normalized Thermal Transient Impedance, Junction-to-Ambient
1
Normalized Effective Transient
Thermal Impedance
Duty Cycle = 0.5
0.2
0.1
0.1
0.05
0.02
Single Pulse
0.01
10 -4
10 -3
10 -2
10 -1
1
10
Square Wave Pulse Duration (s)
Normalized Thermal Transient Impedance, Junction-to-Foot
Vishay Siliconix maintains worldwide manufacturing capability. Products may be manufactured at one of several qualified locations. Reliability data for Silicon
Technology and Package Reliability represent a composite of all qualified locations. For related documents such as package/tape drawings, part marking, and
reliability data, see www.vishay.com/ppg?67078.
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Document Number: 67078
S10-2768-Rev. A, 29-Nov-10
Package Information
Vishay Siliconix
SOIC (NARROW): 8-LEAD
JEDEC Part Number: MS-012
8
6
7
5
E
1
3
2
H
4
S
h x 45
D
C
0.25 mm (Gage Plane)
A
e
B
All Leads
q
A1
L
0.004"
MILLIMETERS
INCHES
DIM
Min
Max
Min
Max
A
1.35
1.75
0.053
0.069
A1
0.10
0.20
0.004
0.008
B
0.35
0.51
0.014
0.020
C
0.19
0.25
0.0075
0.010
D
4.80
5.00
0.189
0.196
E
3.80
4.00
0.150
e
0.101 mm
1.27 BSC
0.157
0.050 BSC
H
5.80
6.20
0.228
0.244
h
0.25
0.50
0.010
0.020
L
0.50
0.93
0.020
0.037
q
0°
8°
0°
8°
S
0.44
0.64
0.018
0.026
ECN: C-06527-Rev. I, 11-Sep-06
DWG: 5498
Document Number: 71192
11-Sep-06
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Application Note 826
Vishay Siliconix
RECOMMENDED MINIMUM PADS FOR SO-8
0.172
(4.369)
0.028
0.022
0.050
(0.559)
(1.270)
0.152
(3.861)
0.047
(1.194)
0.246
(6.248)
(0.711)
Recommended Minimum Pads
Dimensions in Inches/(mm)
Return to Index
APPLICATION NOTE
Return to Index
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Document Number: 72606
Revision: 21-Jan-08
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Revision: 02-Oct-12
1
Document Number: 91000