New Product Si4340CDY Vishay Siliconix Dual N-Channel 20-V (D-S) MOSFET with Schottky Diode FEATURES PRODUCT SUMMARY RDS(on) (Ω) ID (A)a 0.0094 at VGS = 10 V 0.0125 at VGS = 4.5 V 0.008 at VGS = 10 V 0.0095 at VGS = 4.5 V 14.1 12.2 20 18.9 VDS (V) Channel-1 20 Channel-2 20 Qg (Typ.) 9.6 • TrenchFET® Power MOSFET • 100 % Rg Tested • 100 % UIS Tested RoHS COMPLIANT 14.1 SCHOTTKY PRODUCT SUMMARY VDS (V) VSD (V) Diode Forward Voltage IF (A) 20 0.55 V at 2.5 A 2 APPLICATIONS • DC/DC Converters - Game Stations - Notebook PC Logic SO-14 D2 D1 D1 1 14 S1 D1 2 13 S1 G1 3 12 D2 G2 4 11 D2 S2 5 10 D2 S2 6 9 D2 S2 7 8 D2 Schottky Diode G2 G1 S2 S1 Top View N-Channel 2 MOSFET N-Channel 1 MOSFET Ordering Information: Si4340CDY-T1-E3 (Lead (Pb)-free) ABSOLUTE MAXIMUM RATINGS TA = 25 °C, unless otherwise noted Parameter Symbol VDS Channel-1 Channel-2 Drain-Source Voltage 20 20 Gate-Source Voltage VGS ± 20 ± 16 Continuous Drain Current (TJ = 150 °C) 14.1 20 TC = 70 °C 11.2 16.5 11.5b, c 15.2b, c ID b, c TA = 70 °C Single Pulse Avalanche Current Single Pulse Avalanche Energy TC = 25 °C TA = 25 °C L = 0.1 mH IS 2.5 4.5 1.7b, c 2.5b, c IAS 5 EAS 1.25 TC = 25 °C Maximum Power Dissipation TC = 70 °C TA = 25 °C 5.4 1.9 3.5 2b, c 3b, c 1.3b, c 1.9b, c PD TJ, Tstg A mJ 3 TA = 70 °C Operating Junction and Storage Temperature Range 12.2b, c 50 9.2 40 IDM Pulsed Drain Current Source-Drain Current Diode Current V TC = 25 °C TA = 25 °C Unit W - 55 to 150 °C THERMAL RESISTANCE RATINGS Channel-1 Maximum Junction-to-Ambientb, d Maximum Junction-to-Foot (Drain) Channel-2 Symbol Typ. Max. Typ. Max. t ≤ 10 s RthJA 53 62.5 35 42 Steady State RthJF 35 42 18 23 Parameter Unit °C/W Notes: a. Based on TC = 25 °C. b. Surface Mounted on 1" x 1" FR4 board. c. t = 10 s. d. Maximum under Steady State conditions for channel 1 is 110 °C/W and channel 2 is 87 °C/W. Document Number: 68398 S-81547-Rev. B, 07-Jul-08 www.vishay.com 1 New Product Si4340CDY Vishay Siliconix SPECIFICATIONS TJ = 25 °C, unless otherwise noted Parameter Symbol Test Conditions Min. Typ. Max. Unit Static Drain-Source Breakdown Voltage VDS Temperature Coefficient VGS(th) Temperature Coefficient Gate Threshold Voltage Gate-Body Leakage Zero Gate Voltage Drain Current On-State Drain Currentb Drain-Source On-State Resistanceb Forward Transconductanceb VDS ΔVDS/TJ ΔVGS(th)/TJ VGS(th) IGSS IDSS ID(on) RDS(on) gfs VGS = 0 V, ID = 250 µA Ch-1 20 VGS = 0 V, ID = 250 µA Ch-2 20 ID = 250 µA Ch-1 V 20 ID = 25 mA Ch-2 22 ID = 250 µA Ch-1 - 5.5 ID = 25 mA Ch-2 VDS = VGS, ID = 250 µA Ch-1 1 3 VDS = VGS, ID = 250 µA Ch-2 0.8 2.2 VDS = 0 V, VGS = ± 20 V Ch-1 100 VDS = 0 V, VGS = ± 16 V Ch-2 100 VDS = 20 V, VGS = 0 V Ch-1 1 mV/°C - 2.5 VDS = 20 V, VGS = 0 V Ch-2 100 VDS = 20 V, VGS = 0 V, TJ = 85 °C Ch-1 15 VDS = 20 V, VGS = 0 V, TJ = 85 °C Ch-2 10 000 VDS ≥ 5 V, VGS = 10 V Ch-1 20 VDS ≥ 5 V, VGS = 10 V Ch-2 30 VGS = 10 V, ID = 11.5 A Ch-1 0.0077 0.0094 VGS = 10 V, ID = 15.2 A Ch-2 0.0065 0.008 VGS = 4.5 V, ID = 10 A Ch-1 0.010 0.0125 VGS = 4.5 V, ID = 14 A Ch-2 0.0075 0.0095 VDS = 10 V, ID = 11.5 A Ch-1 45 VDS = 10 V, ID = 15.2 A Ch-2 73 Ch-1 1300 Ch-2 1900 Ch-1 330 Ch-2 500 Ch-1 150 Ch-2 160 Ch-1 21 V nA µA A Ω S Dynamica Input Capacitance Output Capacitance Reverse Transfer Capacitance Ciss Channel-1 VDS = 10 V, VGS = 0 V, f = 1 MHz Coss Crss Channel-2 VDS = 10 V, VGS = 0 V, f = 1 MHz VDS = 10 V, VGS = 10 V, ID = 11.5 A Total Gate Charge Gate-Source Charge Gate-Drain Charge Gate Resistance Qg VDS = 10 V, VGS = 10 V, ID = 15.2 A Rg 32 Ch-2 31 47 Ch-1 9.6 15 Channel-1 VDS = 10 V, VGS = 4.5 V, ID = 11.5 A Ch-2 14.1 22 Ch-1 4 Channel-2 VDS = 10 V, VGS = 4.5 V, ID = 15.2 A Ch-2 5 Ch-1 3 Qgs Qgd pF f = 1 MHz Ch-2 3.5 Ch-1 0.65 1.2 Ch-2 1.4 2.8 nC Ω Notes: a. Guaranteed by design, not subject to production testing. b. Pulse test; pulse width ≤ 300 µs, duty cycle ≤ 2 %. www.vishay.com 2 Document Number: 68398 S-81547-Rev. B, 07-Jul-08 New Product Si4340CDY Vishay Siliconix SPECIFICATIONS TJ = 25 °C, unless otherwise noted Parameter Symbol Test Conditions Min. Typ. Max. Ch-1 20 30 Ch-2 22 35 Ch-1 10 15 Ch-2 10 15 Ch-1 20 30 Ch-2 32 50 Ch-1 10 15 Ch-2 10 15 Ch-1 10 15 Ch-2 10 15 Ch-1 10 15 Ch-2 10 15 Ch-1 20 30 Ch-2 25 40 Ch-1 10 15 Ch-2 10 15 Unit Dynamica td(on) Turn-On Delay Time tr Rise Time td(off) Turn-Off Delay Time tf Fall Time td(on) Turn-On Delay Time tr Rise Time Fall Time Channel-2 VDD = 10 V, RL = 1 Ω ID ≅ 10 A, VGEN = 4.5 V, Rg = 1 Ω Channel-1 VDD = 10 V, RL = 1.1 Ω ID ≅ 9.2 A, VGEN = 10 V, Rg = 1 Ω tf Channel-2 VDD = 10 V, RL = 1 Ω ID ≅ 10 A, VGEN = 10 V, Rg = 1 Ω IS TC = 25 °C td(off) Turn-Off Delay Time Channel-1 VDD = 10 V, RL = 1.1 Ω ID ≅ 9.2 A, VGEN = 4.5 V, Rg = 1 Ω ns Drain-Source Body Diode Characteristics Continuous Source-Drain Diode Current Pulse Diode Forward Current a Body Diode Voltage ISM VSD Ch-1 2.5 Ch-2 4.5 Ch-1 40 Ch-2 50 IS = 9.2 A Ch-1 0.8 1.2 IS = 2.5 A Ch-2 0.45 0.55 Ch-1 30 60 Ch-2 30 60 Body Diode Reverse Recovery Time trr Body Diode Reverse Recovery Charge Qrr Channel-1 IF = 9.2 A, di/dt = 100 A/µs, TJ = 25 °C Ch-1 15 25 Ch-2 20 30 Reverse Recovery Fall Time ta Channel-2 IF = 2.5 A, di/dt = 100 A/µs, TJ = 25 °C Ch-1 12 Ch-2 14 Ch-1 18 Ch-2 16 Reverse Recovery Rise Time tb A V ns nC ns Notes: a. Guaranteed by design, not subject to production testing. b. Pulse test; pulse width ≤ 300 µs, duty cycle ≤ 2 %. Stresses beyond those listed under “Absolute Maximum Ratings” may cause permanent damage to the device. These are stress ratings only, and functional operation of the device at these or any other conditions beyond those indicated in the operational sections of the specifications is not implied. Exposure to absolute maximum rating conditions for extended periods may affect device reliability. Document Number: 68398 S-81547-Rev. B, 07-Jul-08 www.vishay.com 3 New Product Si4340CDY Vishay Siliconix CHANNEL-1 TYPICAL CHARACTERISTICS 25 °C, unless otherwise noted 40 10 VGS = 10 thru 4 V TC = - 55 °C I D - Drain Current (A) I D - Drain Current (A) 8 30 20 VGS = 3 V 6 TC = 25 °C 4 10 2 TC = 125 °C VGS = 2 V 0 0.0 0.5 1.0 1.5 2.0 2.5 0 0.0 3.0 0.5 1.0 1.5 2.0 2.5 3.0 VGS - Gate-to-Source Voltage (V) VDS - Drain-to-Source Voltage (V) Output Characteristics Transfer Characteristics 0.015 1500 0.013 1200 0.011 C - Capacitance (pF) R DS(on) - On-Resistance (Ω) Ciss VGS = 4.5 V 0.009 VGS = 10 V 900 600 Coss 0.007 300 0.005 0 Crss 0 10 20 30 40 0 5 ID - Drain Current (A) 15 20 Capacitance On-Resistance vs. Drain Current 1.6 10 ID = 11.5 A 1.5 8 VDS = 10 V 6 VDS = 16 V 4 ID = 11.5 A VGS = 10 V, 4.5 V 1.4 1.3 (Normalized) R DS(on) - On-Resistance VGS - Gate-to-Source Voltage (V) 10 VDS - Drain-to-Source Voltage (V) 1.2 1.1 1.0 0.9 2 0.8 0 0 5 10 15 Qg - Total Gate Charge (nC) Gate Charge www.vishay.com 4 20 25 0.7 - 50 - 25 0 25 50 75 100 125 150 TJ - Junction Temperature (°C) On-Resistance vs. Junction Temperature Document Number: 68398 S-81547-Rev. B, 07-Jul-08 New Product Si4340CDY Vishay Siliconix CHANNEL-1 TYPICAL CHARACTERISTICS 25 °C, unless otherwise noted 0.030 100 ID = 11.5 A TJ = 150 °C R DS(on) - On-Resistance (Ω) I S - Source Current (A) 0.025 TJ = 25 °C 10 0.020 TJ = 125 °C 0.015 0.010 TJ = 25 °C 0.005 1 0.0 0.000 0.2 0.4 0.6 0.8 1.0 0 1.2 2 VSD - Source-to-Drain Voltage (V) 4 6 8 10 VGS - Gate-to-Source Voltage (V) Source-Drain Diode Forward Voltage On-Resistance vs. Gate-to-Source Voltage 2.2 30 2.0 25 ID = 250 µA 20 Power (W) V GS(th) (V) 1.8 1.6 15 1.4 10 1.2 5 1.0 - 50 - 25 0 25 50 75 100 125 0 0.001 150 0.01 TJ - Temperature (°C) 0.1 1 10 100 1000 Time (s) Threshold Voltage Single Pulse Power 100 Limited by RDS(on)* 100 µs I D - Drain Current (A) 10 1 ms 10 ms 1 100 ms 1s 10 s DC 0.1 TA = 25 °C Single Pulse 0.01 0.1 BVDSS Limited 1 10 100 VDS - Drain-to-Source Voltage (V) * VGS > minimum VGS at which RDS(on) is specified Safe Operating Area, Junction-to-Ambient Document Number: 68398 S-81547-Rev. B, 07-Jul-08 www.vishay.com 5 New Product Si4340CDY Vishay Siliconix 18 3.0 15 2.5 12 2.0 Power (W) I D - Drain Current (A) CHANNEL-1 TYPICAL CHARACTERISTICS 25 °C, unless otherwise noted 9 1.5 6 1.0 3 0.5 0.0 0 0 25 50 75 100 TC - Case Temperature (°C) Current Derating* 125 150 25 50 75 100 125 150 TC - Case Temperature (°C) Power Derating * The power dissipation PD is based on TJ(max) = 150 °C, using junction-to-case thermal resistance, and is more useful in settling the upper dissipation limit for cases where additional heatsinking is used. It is used to determine the current rating, when this rating falls below the package limit. www.vishay.com 6 Document Number: 68398 S-81547-Rev. B, 07-Jul-08 New Product Si4340CDY Vishay Siliconix CHANNEL-1 TYPICAL CHARACTERISTICS 25 °C, unless otherwise noted 1 Normalized Effective Transient Thermal Impedance Duty Cycle = 0.5 0.2 0.1 Notes: 0.05 PDM 0.1 t1 0.02 t2 1. Duty Cycle, D = t1 t2 2. Per Unit Base = RthJA = 85 °C/W 3. TJM - T A = PDMZthJA(t) Single Pulse 4. Surface Mounted 0.01 10 -4 10 -3 10 -2 10 -1 1 Square Wave Pulse Duration (s) 100 10 1000 Normalized Thermal Transient Impedance, Junction-to-Ambient 1 Normalized Effective Transient Thermal Impedance Duty Cycle = 0.5 0.2 0.1 0.1 0.05 0.02 Single Pulse 0.01 10 -4 10 -3 10 -2 10 -1 Square Wave Pulse Duration (s) 1 10 Normalized Thermal Transient Impedance, Junction-to-Foot Document Number: 68398 S-81547-Rev. B, 07-Jul-08 www.vishay.com 7 New Product Si4340CDY Vishay Siliconix CHANNEL-2 TYPICAL CHARACTERISTICS 25 °C, unless otherwise noted 50 10 VGS = 10 thru 4 V TC - 55 °C VGS = 3 V 8 I D - Drain Current (A) I D - Drain Current (A) 40 30 20 10 6 TC = 25 °C 4 2 TC = 125 °C VGS = 2 V 0 0.0 0.4 0.8 1.2 1.6 0 0.0 2.0 0.5 1.0 1.5 2.0 2.5 VDS - Drain-to-Source Voltage (V) VGS - Gate-to-Source Voltage (V) Output Characteristics Transfer Characteristics 0.009 2500 0.008 2000 3.0 C - Capacitance (pF) RDS(on) - On-Resistance (Ω) Ciss VGS = 4.5 V 0.007 VGS = 10 V 0.006 1500 1000 Coss 0.005 500 0.004 0 0 10 20 30 40 Crss 0 50 5 ID - Drain Current (A) 15 20 Capacitance On-Resistance vs. Drain Current 1.6 10 ID = 15.2 A 1.5 8 ID = 15.2 A VGS = 10 V, 4.5 V 1.4 R DS(on) - On-Resistance (Normalized) VGS - Gate-to-Source Voltage (V) 10 VDS - Drain-to-Source Voltage (V) VDS = 10 V 6 VDS = 16 V 4 2 1.3 1.2 1.1 1.0 0.9 0.8 0 0 7 14 21 Qg - Total Gate Charge (nC) Gate Charge www.vishay.com 8 28 35 0.7 - 50 - 25 0 25 50 75 100 125 150 TJ - Junction Temperature (°C) On-Resistance vs. Junction Temperature Document Number: 68398 S-81547-Rev. B, 07-Jul-08 New Product Si4340CDY Vishay Siliconix CHANNEL-2 TYPICAL CHARACTERISTICS 25 °C, unless otherwise noted 0.020 100 TJ = 150 °C RDS(on) - On-Resistance (Ω) I S - Source Current (A) ID = 15.2 A TJ = 25 °C 10 0.015 TJ = 125 °C 0.010 TJ = 25 °C 0.005 0.000 1 0.0 0.2 0.4 0.6 0.8 1.0 0 1.2 2 VSD - Source-to-Drain Voltage (V) 4 6 8 10 VGS - Gate-to-Source Voltage (V) Source-Drain Diode Forward Voltage On-Resistance vs. Gate-to-Source Voltage 80 100 60 1 Power (W) I R - Reverse Current (mA) 10 10-1 VDS = 20 V 40 10-2 20 10-3 VDS = 16 V 10-4 - 50 - 25 0 25 50 75 100 125 0 0.001 150 0.01 TJ - Temperature (°C) 1 10 100 1000 Time (s) Single Pulse Power Reverse Current vs. Junction Temperature 100 Limited by RDS(on)* 100 µs 10 I D - Drain Current (A) 0.1 1 ms 10 ms 1 100 ms 1s 10 s 0.1 DC TA = 25 °C Single Pulse 0.01 0.1 BVDSS Limited 1 10 100 VDS - Drain-to-Source Voltage (V) * VGS > minimum VGS at which RDS(on) is specified Safe Operating Area, Junction-to-Ambient Document Number: 68398 S-81547-Rev. B, 07-Jul-08 www.vishay.com 9 New Product Si4340CDY Vishay Siliconix CHANNEL-2 TYPICAL CHARACTERISTICS 25 °C, unless otherwise noted 6 25 5 4 Package Limited Power (W) I D - Drain Current (A) 20 15 10 3 2 5 1 0 0 0 25 50 75 100 125 150 25 50 75 100 TC - Case Temperature (°C) TC - Case Temperature (°C) Current Derating* Power Derating 125 150 * The power dissipation PD is based on TJ(max) = 150 °C, using junction-to-case thermal resistance, and is more useful in settling the upper dissipation limit for cases where additional heatsinking is used. It is used to determine the current rating, when this rating falls below the package limit. www.vishay.com 10 Document Number: 68398 S-81547-Rev. B, 07-Jul-08 New Product Si4340CDY Vishay Siliconix CHANNEL-2 TYPICAL CHARACTERISTICS 25 °C, unless otherwise noted 1 Normalized Effective Transient Thermal Impedance Duty Cycle = 0.5 0.2 0.1 Notes: 0.05 PDM 0.1 t1 0.02 t2 1. Duty Cycle, D = t1 t2 2. Per Unit Base = RthJA = 70 °C/W 3. TJM - T A = PDMZthJA(t) 4. Surface Mounted Single Pulse 0.01 10 -4 10 -3 10 -2 10 -1 1 Square Wave Pulse Duration (s) 100 10 1000 Normalized Thermal Transient Impedance, Junction-to-Ambient 1 Normalized Effective Transient Thermal Impedance Duty Cycle = 0.5 0.2 0.1 0.1 0.05 0.02 Single Pulse 0.01 10 -4 10 -3 10 -2 10 -1 Square Wave Pulse Duration (s) 1 10 Normalized Thermal Transient Impedance, Junction-to-Foot Vishay Siliconix maintains worldwide manufacturing capability. Products may be manufactured at one of several qualified locations. Reliability data for Silicon Technology and Package Reliability represent a composite of all qualified locations. For related documents such as package/tape drawings, part marking, and reliability data, see http://www.vishay.com/ppg?68398. Document Number: 68398 S-81547-Rev. B, 07-Jul-08 www.vishay.com 11 Legal Disclaimer Notice Vishay Disclaimer All product specifications and data are subject to change without notice. Vishay Intertechnology, Inc., its affiliates, agents, and employees, and all persons acting on its or their behalf (collectively, “Vishay”), disclaim any and all liability for any errors, inaccuracies or incompleteness contained herein or in any other disclosure relating to any product. Vishay disclaims any and all liability arising out of the use or application of any product described herein or of any information provided herein to the maximum extent permitted by law. The product specifications do not expand or otherwise modify Vishay’s terms and conditions of purchase, including but not limited to the warranty expressed therein, which apply to these products. No license, express or implied, by estoppel or otherwise, to any intellectual property rights is granted by this document or by any conduct of Vishay. The products shown herein are not designed for use in medical, life-saving, or life-sustaining applications unless otherwise expressly indicated. Customers using or selling Vishay products not expressly indicated for use in such applications do so entirely at their own risk and agree to fully indemnify Vishay for any damages arising or resulting from such use or sale. Please contact authorized Vishay personnel to obtain written terms and conditions regarding products designed for such applications. Product names and markings noted herein may be trademarks of their respective owners. Document Number: 91000 Revision: 18-Jul-08 www.vishay.com 1