SUB85N10-10 Datasheet

SUP85N10-10, SUB85N10-10
Vishay Siliconix
N-Channel 100-V (D-S) 175 °C MOSFET
FEATURES
PRODUCT SUMMARY
VDS (V)
RDS(on) (Ω)
0.0105 at VGS = 10 V
100
• TrenchFET® Power MOSFET
• 175 °C Maximum Junction Temperature
• Compliant to RoHS Directive 2002/95/EC
ID (A)
85a
0.012 at VGS = 4.5 V
TO-220AB
D
TO-263
G
DRAIN connected to TAB
G D S
Top View
G D S
S
SUB85N10-10
Top View
N-Channel MOSFET
SUP85N10-10
ORDERING INFORMATION
Package
Lead (Pb)-free
TO-220AB
SUP85N10-10-E3
TO-263
SUB85N10-10-E3
ABSOLUTE MAXIMUM RATINGS TA = 25 °C, unless otherwise noted
Parameter
Symbol
Limit
Drain-Source Voltage
VDS
100
Gate-Source Voltage
VGS
± 20
TC = 25 °C
Continuous Drain Current (TJ = 150 °C)
Pulsed Drain Current
Avalanche Current
L = 0.1 mH
b
Single Pulse Avalanche Energy
Maximum Power Dissipationb
TC = 25 °C (TO-220AB and TO-263)
TA = 25 °C (TO-263)
d
60a
IDM
240
IAS
75
EAS
280
A
mJ
250c
PD
W
3.75
TJ, Tstg
Operating Junction and Storage Temperature Range
V
85a
ID
TC = 125 °C
Unit
- 55 to 175
°C
THERMAL RESISTANCE RATINGS
Parameter
Junction-to-Ambient
Junction-to-Case
Symbol
PCB Mount
(TO-263)d
Free Air (TO-220AB)
RthJA
RthJC
Limit
Unit
40
62.5
°C/W
0.6
Notes:
a. Package limited.
b. Duty cycle ≤ 1 %.
c. See SOA curve fo voltage derating.
d. When mounted on 1" square PCB (FR-4 material).
Document Number: 71141
S10-0107-Rev. E, 18-Jan-10
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SUP85N10-10, SUB85N10-10
Vishay Siliconix
SPECIFICATIONS TJ = 25 °C, unless otherwise noted
Parameter
Symbol
Test Conditions
Min.
Typ.
Max.
Unit
Static
VDS
VGS = 0 V, ID = 250 µA
100
VGS(th)
VDS = VGS, ID = 250 µA
1
Gate-Body Leakage
IGSS
VDS = 0 V, VGS = ± 20 V
VDS = 100 V, VGS = 0 V
1
Zero Gate Voltage Drain Current
IDSS
VDS = 100 V, VGS = 0 V, TJ = 125 °C
50
Drain-Source Breakdown Voltage
Gate-Threshold Voltage
3
± 100
VDS = 100 V, VGS = 0 V, TJ = 175 °C
a
On-State Drain Current
Drain-Source On-State Resistancea
VDS = ≥ 5 V, VGS = 10 V
ID(on)
RDS(on)
VGS = 10 V, ID = 30 A
0.0085
0.0105
VGS = 4.5 V, ID = 20 A
0.010
0.012
VDS = 15 V, ID = 30 A
µA
A
VGS = 10 V, ID = 30 A, TJ = 125 °C
gfs
nA
250
120
0.017
VGS = 10 V, ID = 30 A, TJ = 175 °C
Forward Transconductancea
V
Ω
0.022
25
S
Dynamicb
Input Capacitance
Ciss
Output Capacitance
Coss
Reverse Transfer Capacitance
Crss
Total Gate Chargec
Gate-Source Charge
c
Gate-Drain Charge
Timec
c
Qgs
c
Fall Timec
665
pF
265
105
VDS = 50 V, VGS = 10 V, ID = 85 A
160
nC
17
Qgd
23
td(on)
12
25
90
135
55
85
130
195
tr
Rise Time
Turn-Off DelayTime
VGS = 0 V, VDS = 25 V, f = 1 MHz
Qg
c
Turn-On Delay
6550
td(off)
VDD = 50 V, RL = 0.6 Ω
ID ≅ 85 A, VGEN = 10 V, Rg = 2.5 Ω
tf
Source-Drain Diode Ratings and Characteristics TC = 25 °C
b
IS
85
Pulsed Current
ISM
240
Forward Voltagea
VSD
Continuous Current
Reverse Recovery Time
Peak Reverse Recovery Current
Reverse Recovery Charge
Qrr
A
IF = 85 A, VGS = 0 V
1.0
1.5
V
85
140
ns
IF = 50 A, dI/dt = 100 A/µs
4.5
7
A
0.35
µC
trr
IRM(REC)
ns
0.17
Notes:
a. Pulse test; pulse width ≤ 300 µs, duty cycle ≤ 2 %.
b. Guaranteed by design, not subject to production testing.
c. Independent of operating temperature.
Stresses beyond those listed under “Absolute Maximum Ratings” may cause permanent damage to the device. These are stress ratings only, and functional operation
of the device at these or any other conditions beyond those indicated in the operational sections of the specifications is not implied. Exposure to absolute maximum
rating conditions for extended periods may affect device reliability.
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Document Number: 71141
S10-0107-Rev. E, 18-Jan-10
SUP85N10-10, SUB85N10-10
Vishay Siliconix
TYPICAL CHARACTERISTICS
TA = 25 °C, unless otherwise noted
200
250
VGS = 10 V thru 6 V
5V
200
I D - Drain Current (A)
I D - Drain Current (A)
150
150
100
4V
100
TC = 125 °C
50
50
- 55 °C
25 °C
3V
0
0
0
2
4
6
8
0
10
1
2
3
4
5
VDS - Drain-to-Source Voltage (V)
VGS - Gate-to-Source Voltage (V)
Output Characteristics
Transfer Characteristics
250
6
0.020
R DS(on) - On-Resistance (Ω)
g fs - Transconductance (S)
TC = - 55 °C
200
25 °C
150
125 °C
100
50
0
0
20
40
60
80
0.015
VGS = 4.5 V
VGS = 10 V
0.010
0.005
0.000
100
0
20
40
80
100
120
ID - Drain Current (A)
ID - Drain Current (A)
On-Resistance vs. Drain Current
Transconductance
20
VGS - Gate-to-Source Voltage (V)
10 000
8000
C - Capacitance (pF)
60
Ciss
6000
4000
2000
Crss
VDS = 50 V
ID = 85 A
16
12
8
4
Coss
0
0
0
15
30
45
60
VDS - Drain-to-Source Voltage (V)
Capacitance
Document Number: 71141
S10-0107-Rev. E, 18-Jan-10
75
0
50
100
150
200
Qg - Total Gate Charge (nC)
Gate Charge
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SUP85N10-10, SUB85N10-10
Vishay Siliconix
TYPICAL CHARACTERISTICS TA = 25 °C, unless otherwise noted
2.5
100
VGS = 10 V
ID = 30 A
I S - Source Current (A)
(Normalized)
R DS(on) - On-Resistance
2.0
1.5
1.0
TJ = 150 °C
TJ = 25 °C
10
0.5
0.0
- 50
1
- 25
0
25
50
75
100
125
150
175
0
0.6
0.9
1.2
VSD - Source-to-Drain Voltage (V)
On-Resistance vs. Junction Temperature
Source-Drain Diode Forward Voltage
1000
140
130
100
IAV (A) at T A = 25 °C
VDS (V)
I Dav (a)
0.3
TJ - Junction Temperature (°C)
10
IAV (A) at T A = 150 °C
ID = 250 µA
120
110
1
100
0.1
0.00001
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0.0001
0.001
0.01
0.1
1
90
- 50
- 25
0
25
50
75
100
125
tin (s)
TJ - Junction Temperature (°C)
Avalanche Current vs. Time
TJ - Drain-Source Breakdown
vs. Junction-Temperature
150
175
Document Number: 71141
S10-0107-Rev. E, 18-Jan-10
SUP85N10-10, SUB85N10-10
Vishay Siliconix
THERMAL RATINGS
100
1000
10 µs
100
I D - Drain Current (A)
I D - Drain Current (A)
80
60
40
100 µs
10
Limited
by R DS(on)*
1 ms
10 ms
100 ms, DC
1
20
0
0
25
50
75
100
125
150
175
0.1
0.1
TC = 25 °C
Single Pulse
1
10
100
1000
VDS - Drain-to-Source Voltage (V)
* VGS > minimum VGS at which RDS(on) is specified
TC - Case Temperature (°C)
Maximum Avalanche and Drain Current
vs. Case Temperature
Safe Operating Area
2
Normalized Effective Transient
Thermal Impedance
1
Duty Cycle = 0.5
0.2
0.1
0.1
0.05
0.02
Single Pulse
0.01
10-4
10-3
10-2
10-1
1
10
Square Wave Pulse Duration (s)
Normalized Thermal Transient Impedance, Junction-to-Case
Vishay Siliconix maintains worldwide manufacturing capability. Products may be manufactured at one of several qualified locations. Reliability data for Silicon
Technology and Package Reliability represent a composite of all qualified locations. For related documents such as package/tape drawings, part marking, and
reliability data, see www.vishay.com/ppg?71141.
Document Number: 71141
S10-0107-Rev. E, 18-Jan-10
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Package Information
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Vishay Siliconix
TO-220AB
MILLIMETERS
A
E
F
D
H(1)
Q
ØP
3
2
L(1)
1
M*
L
b(1)
INCHES
DIM.
MIN.
MAX.
MIN.
MAX.
A
4.25
4.65
0.167
0.183
b
0.69
1.01
0.027
0.040
b(1)
1.20
1.73
0.047
0.068
c
0.36
0.61
0.014
0.024
D
14.85
15.49
0.585
0.610
D2
12.19
12.70
0.480
0.500
E
10.04
10.51
0.395
0.414
e
2.41
2.67
0.095
0.105
e(1)
4.88
5.28
0.192
0.208
F
1.14
1.40
0.045
0.055
H(1)
6.09
6.48
0.240
0.255
0.115
J(1)
2.41
2.92
0.095
L
13.35
14.02
0.526
0.552
L(1)
3.32
3.82
0.131
0.150
ØP
3.54
3.94
0.139
0.155
Q
2.60
3.00
0.102
0.118
ECN: T14-0413-Rev. P, 16-Jun-14
DWG: 5471
Note
* M = 1.32 mm to 1.62 mm (dimension including protrusion)
Heatsink hole for HVM
C
b
e
J(1)
e(1)
D2
Document Number: 71195
1
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ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
Revison: 16-Jun-14
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Revision: 02-Oct-12
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Document Number: 91000