SUP/SUB85N10-10 New Product Vishay Siliconix N-Channel 100-V (D-S) 175C MOSFET V(BR)DSS (V) rDS(on) () ID (A) 0.0105 @ VGS = 10 V 100 85 a 0.012 @ VGS = 4.5 V D TO-220AB TO-263 G DRAIN connected to TAB G D S Top View G D S S SUB85N10-10 Top View SUP85N10-10 N-Channel MOSFET Parameter Symbol Limit Drain-Source Voltage VDS 100 Gate-Source Voltage VGS 20 TC = 25C Continuous Drain Current (TJ = 175C) 175 C) TC = 125C Pulsed Drain Current IDM Avalanche Current Repetitive Avalanche Energyb Maximum Power Dissipationb ID L = 0.1 mH TC = 25C (TO-220AB and TO-263) TA = 25C (TO-263)d Operating Junction and Storage Temperature Range V 85a 60a A 240 IAR 75 EAR 280 PD Unit 250c 3.75 mJ W TJ, Tstg –55 to 175 C Symbol Limit Unit Parameter PCB Mount (TO-263)d Junction-to-Ambient Free Air (TO-220AB) Junction-to-Case 40 RthJA RthJC 62.5 C/W 0.6 Notes a. Package limited. b. Duty cycle 1%. c. See SOA curve for voltage derating. d. When mounted on 1” square PCB (FR-4 material). Document Number: 71141 S-00172—Rev. A, 14-Feb-00 www.vishay.com FaxBack 408-970-5600 2-1 SUP/SUB85N10-10 New Product Vishay Siliconix Parameter Symbol Test Condition Min Typ Max V(BR)DSS VDS = 0 V, ID = 250 mA 100 VGS(th) VDS = VGS, ID = 250 mA 1 IGSS VDS = 0 V, VGS = "20 V "100 VDS = 80 V, VGS = 0 V 1 Unit Static Drain-Source Breakdown Voltage Gate-Threshold Voltage Gate-Body Leakage Zero Gate Voltage Drain Z G V l D i Current C On-State Drain Currenta a D i S O S R i Drain-Source On-State Resistance IDSS ID(on) rDS(on) V 3 VDS = 80 V, VGS = 0 V, TJ = 125C 50 VDS = 80 V, VGS = 0 V, TJ = 175C 250 VDS w 5 V, VGS = 10 V 120 0.0085 0.0105 VGS = 4.5 V, ID = 20 A 0.0010 0.012 VDS = 15 V, ID = 30 A W 0.017 VGS = 10 V, ID = 30 A, TJ = 175C gfs mA A A VGS = 10 V, ID = 30 A VGS = 10 V, ID = 30 A, TJ = 125C Forward Transconductancea nA 0.022 25 S Dynamicb Input Capacitance Ciss Output Capacitance Coss Reverse Transfer Capacitance Crss Total Gate Chargec Qg Gate-Source Chargec Qgs 6550 VGS = 0 V, VDS = 25 V, f = 1 MHz pF F 665 265 105 VDS = 50 V, V VGS = 10 V V, ID = 85 A 160 nC C 17 Gate-Drain Chargec Qgd 23 Turn-On Delay Timec td(on) 12 25 tr 90 135 55 85 130 195 Rise Timec Turn-Off Delay Timec Fall Timec td(off) VDD = 50 V V,, RL = 0 0.6 6W ID ^ 85 A, A VGEN = 10 V V, RG = 2 2.5 5W tf ns Source-Drain Diode Ratings and Characteristics (TC = 25C)b Continuous Current IS 85 Pulsed Current ISM 240 Forward Voltagea VSD A Reverse Recovery Time Peak Reverse Recovery Current Reverse Recovery Charge IF = 85 A, VGS = 0 V 1.0 1.5 V 85 140 ns IF = 50 A A, di/d di/dt = 100 A/ A/ms 4.5 7 A 0.17 0.35 mC trr IRM(REC) Qrr Notes a. Pulse test; pulse width v 300 ms, duty cycle v 2%. b. Guaranteed by design, not subject to production testing. c. Independent of operating temperature. www.vishay.com FaxBack 408-970-5600 2-2 Document Number: 71141 S-00172—Rev. A, 14-Feb-00 SUP/SUB85N10-10 New Product Vishay Siliconix Output Characteristics Transfer Characteristics 200 250 VGS = 10 thru 6 V 5V I D – Drain Current (A) I D – Drain Current (A) 200 150 100 4V 50 150 100 TC = 125C 50 25C –55C 3V 0 0 0 2 4 6 8 10 0 VDS – Drain-to-Source Voltage (V) 1 2 3 4 5 6 VGS – Gate-to-Source Voltage (V) Transconductance On-Resistance vs. Drain Current 0.020 250 TC = –55C r DS(on) – On-Resistance ( ) g fs – Transconductance (S) 200 25C 150 125C 100 50 0 0.015 VGS = 4.5 V VGS = 10 V 0.010 0.005 0 0 20 40 60 80 100 0 20 40 ID – Drain Current (A) 80 100 120 ID – Drain Current (A) Capacitance Gate Charge 20 V GS – Gate-to-Source Voltage (V) 10000 8000 C – Capacitance (pF) 60 Ciss 6000 4000 2000 Crss Coss 0 VDS = 50 V ID = 85 A 16 12 8 4 0 0 15 30 45 60 VDS – Drain-to-Source Voltage (V) Document Number: 71141 S-00172—Rev. A, 14-Feb-00 75 0 50 100 150 200 Qg – Total Gate Charge (nC) www.vishay.com FaxBack 408-970-5600 2-3 SUP/SUB85N10-10 New Product Vishay Siliconix On-Resistance vs. Junction Temperature Source-Drain Diode Forward Voltage 2.5 100 2.0 I S – Source Current (A) r DS(on) – On-Resistance (W) (Normalized) VGS = 10 V ID = 30 A 1.5 1.0 TJ = 150C 0.5 0 –50 1 –25 0 25 50 75 100 125 150 175 0 0.3 TJ – Junction Temperature (C) 1.2 140 130 V(BR)DSS (V) 100 IAV (A) @ TA = 25C I Dav (a) 0.9 Drain Source Breakdown vs. Junction Temperature 1000 10 IAV (A) @ TA = 150C ID = 250 mA 120 110 1 100 0.1 0.00001 0.6 VSD – Source-to-Drain Voltage (V) Avalanche Current vs. Time 0.0001 0.001 0.01 tin (Sec) www.vishay.com FaxBack 408-970-5600 2-4 TJ = 25C 10 0.1 1 90 –50 –25 0 25 50 75 100 125 150 175 TJ – Junction Temperature (C) Document Number: 71141 S-00172—Rev. A, 14-Feb-00 SUP/SUB85N10-10 New Product Vishay Siliconix Maximum Avalanche and Drain Current vs. Case Temperature Safe Operating Area 1000 100 10 ms 80 I D – Drain Current (A) I D – Drain Current (A) 100 60 40 100 ms 10 0 1 ms 10 ms 100 ms dc 1 20 Limited by rDS(on) TC = 25C Single Pulse 0.1 0 25 50 75 100 125 150 175 0.1 1 10 1000 100 VDS – Drain-to-Source Voltage (V) TC – Ambient Temperature (C) Normalized Thermal Transient Impedance, Junction-to-Case 2 Normalized Effective Transient Thermal Impedance 1 Duty Cycle = 0.5 0.2 0.1 0.1 0.05 0.02 Single Pulse 0.01 10–4 10–3 10–2 10–1 1 10 Square Wave Pulse Duration (sec) Document Number: 71141 S-00172—Rev. A, 14-Feb-00 www.vishay.com FaxBack 408-970-5600 2-5