SUP90P06-09L Vishay Siliconix P-Channel 60 V (D-S) 175 °C MOSFET FEATURES PRODUCT SUMMARY VDS (V) - 60 RDS(on) () ID (A)c 0.0093 at VGS = - 10 V - 90 0.0118 at VGS = - 4.5 V - 90 • TrenchFET® Power MOSFET • Compliant to RoHS Directive 2002/95/EC RoHS COMPLIANT APPLICATIONS • DC/DC Primary Switch TO-220AB S G Drain connected to Tab G D S Top View D P-Channel MOSFET Ordering Information: SUP90P06-09L-E3 (Lead (Pb)-free) ABSOLUTE MAXIMUM RATINGS (TC = 25 °C, unless otherwise noted) Parameter Symbol Limit Drain-Source Voltage VDS - 60 Gate-Source Voltage VGS ± 20 Continuous Drain Current (TJ = 175 °C)c TC = 25 °C TC = 125 °C Pulsed Drain Current Avalanche Current a L = 0.1 mH Single Pulse Avalanche Energy Power Dissipation Operating Junction and Storage Temperature Range TC = 25 °C TA = 25 °C ID - 67 - 200 IAS - 65 PD V - 90 IDM EAS Unit 211 250b 2.4 A mJ W TJ, Tstg - 55 to 175 °C Symbol Limit Unit THERMAL RESISTANCE RATINGS Parameter Junction-to-Ambient Free Air RthJA 62 Junction-to-Case RthJC 0.6 °C/W Notes: a. Duty cycle 1 %. b. See SOA curve for voltage derating. c. Limited by package. Document Number: 73010 S10-2545-Rev. B, 08-Nov-10 www.vishay.com 1 SUP90P06-09L Vishay Siliconix SPECIFICATIONS (TJ = 25 °C, unless otherwise noted) Parameter Symbol Test Conditions Min. VDS VGS = 0 V, ID = - 250 µA - 60 VGS(th) VDS = VGS, ID = - 250 µA -1 IGSS VDS = 0 V, VGS = ± 20 V Typ. Max. Unit Static Drain-Source Breakdown Voltage Gate-Threshold Voltage Gate-Body Leakage Zero Gate Voltage Drain Current IDSS ± 100 VDS = - 60 V, VGS = 0 V -1 VDS = - 60 V, VGS = 0 V, TJ = 125 °C - 50 VDS = - 60 V, VGS = 0 V, TJ = 175 °C - 250 VDS= - 5 V, VGS = - 10 V ID(on) On-State Drain Currenta - 120 VGS = - 10 V, ID = - 30 A Drain-Source On-State Resistancea RDS(on) Forward Transconductance 0.0150 VGS = - 10 V, ID = - 30 A, TJ = 175 °C 0.0190 VDS = - 15 V, ID = - 30 A nA µA 0.0093 VGS = - 10 V, ID = - 30 A, TJ = 125 °C gfs V A 0.0074 VGS = - 4.5 V, ID = - 20 A a -3 0.0094 0.0118 20 S b Dynamic Input Capacitance Ciss Output Capacitance Coss Reverse Transfer Capacitance Crss c Gate-Source Charge Qgs Gate-Drain Charge Qgd Gate Resistance Rg c c td(on) c td(off) tr Rise Timec Turn-Off Delay Time Fall Timec 975 pF 760 Qg Total Gate Chargec Turn-On Delay Time 9200 VGS = 0 V, VDS = - 25 V, f = 1 MHz 160 VDS = - 30 V, VGS = - 10 V, ID = - 90 A 240 nC 40 36 f = 1.0 MHz VDD = - 30 V, RL = 0.33 ID - 90 A, VGEN = - 10 V, Rg = 2.5 tf 3 20 30 190 285 140 210 300 450 ns Source-Drain Diode Ratings and Characteristics (TC = 25 °C)b IS - 90 Pulsed Current ISM - 200 Forward Voltagea VSD Continuous Current Reverse Recovery Time Peak Reverse Recovery Current Reverse Recovery Charge IF = - 50 A, VGS = 0 V - 1.0 IF = - 50 A, dI/dt = 100 A/µs 0.09 trr IRM(REC) Qrr A - 1.5 V 60 90 ns -3 - 4.5 A 0.2 µC Notes: a. Pulse test; pulse width 300 µs, duty cycle 2 %. b. Guaranteed by design, not subject to production testing. c. Independent of operating temperature. Stresses beyond those listed under “Absolute Maximum Ratings” may cause permanent damage to the device. These are stress ratings only, and functional operation of the device at these or any other conditions beyond those indicated in the operational sections of the specifications is not implied. Exposure to absolute maximum rating conditions for extended periods may affect device reliability. www.vishay.com 2 Document Number: 73010 S10-2545-Rev. B, 08-Nov-10 SUP90P06-09L Vishay Siliconix TYPICAL CHARACTERISTICS (25 °C, unless otherwise noted) 200 200 5V VGS = 10 V thru 6 V 160 I D - Drain Current (A) I D - Drain Current (A) 160 120 4V 80 120 80 TC = 125 °C 40 40 25 °C 2V 3V - 55 °C 0 0.0 0.5 1.0 1.5 2.0 2.5 3.0 3.5 4.0 4.5 5.0 5.5 0 0 2 4 6 8 10 VGS - Gate-to-Source Voltage (V) VDS - Drain-to-Source Voltage (V) Output Characteristics Transfer Characteristics 0.020 200 160 25 °C 120 125 °C R DS(on) - On-Resistance (Ω) g fs - Transconductance (S) TC = - 55 °C 80 40 0.016 0.012 VGS = 4.5 V VGS = 10 V 0.008 0.004 0.000 0 0 10 20 30 40 50 60 70 0 80 20 40 ID - Drain Current (A) 80 100 120 ID - Drain Current (A) Transconductance On-Resistance vs. Drain Current 20 VGS - Gate-to-Source Voltage (V) 15 000 12 000 C - Capacitance (pF) 60 Ciss 9000 6000 3000 VDS = 30 V ID = 90 A 16 12 8 4 Coss Crss 0 0 0 10 20 30 40 VDS - Drain-to-Source Voltage (V) Capacitance Document Number: 73010 S10-2545-Rev. B, 08-Nov-10 50 60 0 40 80 120 160 200 240 280 320 Qg - Total Gate Charge (nC) Gate Charge www.vishay.com 3 SUP90P06-09L Vishay Siliconix TYPICAL CHARACTERISTICS (25 °C, unless otherwise noted) 100 2.0 VGS = 10 V ID = 30 A I S - Source Current (A) R DS(on) - On-Resistance (Normalized) 1.7 1.4 1.1 TJ = 150 °C TJ = 25 °C 10 0.8 0.5 - 50 - 25 0 25 50 75 100 125 150 1 0.0 175 0.3 0.6 0.9 1.2 VSD - Source-to-Drain Voltage (V) TJ - Junction Temperature (°C) Source-Drain Diode Forward Voltage On-Resistance vs. Junction Temperature 1000 76 ID = 10 mA 72 V DS (V) I Dav (a) 100 IAV (A) at TA = 25 °C 10 68 64 1 60 IAV (A) at TA = 150 °C 0.1 0.0001 www.vishay.com 4 0.001 0.01 0.1 1 56 - 50 - 25 0 25 50 75 100 125 tin (s) TJ - Junction Temperature (°C) Avalanche Current vs. Time Drain Source Breakdown vs. Junction Temperature 150 175 Document Number: 73010 S10-2545-Rev. B, 08-Nov-10 SUP90P06-09L Vishay Siliconix THERMAL RATINGS 1000 200 Limited by RDS(on)* 10 µs I D - Drain Current (A) I D - Drain Current (A) 150 100 Limited by Package 50 25 50 75 100 125 150 100 µs 10 1 ms 10 ms 100 ms, DC 1 0.1 0.1 0 0 100 175 TC - Case Temperature (°C) Maximum Avalanche and Drain Current vs. Case Temperature TC = 25 °C Single Pulse 1 10 100 VDS - Drain-to-Source Voltage (V) * VGS > minimum VGS at which RDS(on) is specified Safe Operating Area 2 Normalized Effective Transient Thermal Impedance 1 Duty Cycle = 0.5 0.2 Notes: PDM 0.1 0.1 0.05 0.02 t1 t2 1. Duty Cycle, D = Single Pulse t1 t2 2. Per Unit Base = RthJA = 62.5 °C/W 3. TJM - TA = PDMZthJA(t) 4. Surface Mounted 0.01 10-4 10-3 10-2 10-1 1 Square Wave Pulse Duration (s) Normalized Thermal Transient Impedance, Junction-to-Case Vishay Siliconix maintains worldwide manufacturing capability. Products may be manufactured at one of several qualified locations. Reliability data for Silicon Technology and Package Reliability represent a composite of all qualified locations. For related documents such as package/tape drawings, part marking, and reliability data, see www.vishay.com/ppg?73010. Document Number: 73010 S10-2545-Rev. B, 08-Nov-10 www.vishay.com 5 Package Information www.vishay.com Vishay Siliconix TO-220AB MILLIMETERS A E F D H(1) Q ØP 3 2 L(1) 1 M* L b(1) INCHES DIM. MIN. MAX. MIN. MAX. A 4.25 4.65 0.167 0.183 b 0.69 1.01 0.027 0.040 b(1) 1.20 1.73 0.047 0.068 c 0.36 0.61 0.014 0.024 D 14.85 15.49 0.585 0.610 D2 12.19 12.70 0.480 0.500 E 10.04 10.51 0.395 0.414 e 2.41 2.67 0.095 0.105 e(1) 4.88 5.28 0.192 0.208 F 1.14 1.40 0.045 0.055 H(1) 6.09 6.48 0.240 0.255 0.115 J(1) 2.41 2.92 0.095 L 13.35 14.02 0.526 0.552 L(1) 3.32 3.82 0.131 0.150 ØP 3.54 3.94 0.139 0.155 Q 2.60 3.00 0.102 0.118 ECN: T14-0413-Rev. P, 16-Jun-14 DWG: 5471 Note * M = 1.32 mm to 1.62 mm (dimension including protrusion) Heatsink hole for HVM C b e J(1) e(1) D2 Document Number: 71195 1 For technical questions, contact: [email protected] THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000 Revison: 16-Jun-14 Legal Disclaimer Notice www.vishay.com Vishay Disclaimer ALL PRODUCT, PRODUCT SPECIFICATIONS AND DATA ARE SUBJECT TO CHANGE WITHOUT NOTICE TO IMPROVE RELIABILITY, FUNCTION OR DESIGN OR OTHERWISE. Vishay Intertechnology, Inc., its affiliates, agents, and employees, and all persons acting on its or their behalf (collectively, “Vishay”), disclaim any and all liability for any errors, inaccuracies or incompleteness contained in any datasheet or in any other disclosure relating to any product. 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