SUM90P10-19L Vishay Siliconix P-Channel 100-V (D-S) MOSFET FEATURES PRODUCT SUMMARY VDS (V) - 100 rDS(on) (Ω) ID (A) 0.019 at VGS = - 10 V - 90 0.021 at VGS = - 4.5 V - 85 Qg (Typ) • TrenchFET® Power MOSFET RoHS COMPLIANT 97 nC S TO-263 G Drain Connected to Tab G D S D Top View P-Channel MOSFET Ordering Information: SUM90P10-19L-E3 (Lead (Pb)-free) ABSOLUTE MAXIMUM RATINGS TA = 25 °C, unless otherwise noted Parameter Drain-Source Voltage Gate-Source Voltage Continuous Drain Current (TJ = 150 °C) Symbol VDS VGS TC = 25 °C TC = 125 °C TA = 25 °C TA = 125 °C ID IDM Pulsed Drain Current TC = 25 °C TA = 25 °C IS Avalanche Current Single-Pulse Avalanche Energy L = 0.1 mH IAS EAS Maximum Power Dissipation TC = 25 °C TC = 125 °C TA = 25 °C TA = 125 °C PD Continuous Source-Drain Diode Current Limit - 100 ± 20 - 90 - 52 TJ, Tstg Operating Junction and Storage Temperature Range Unit V - 17.2b, c - 9.9b, c - 90 - 250 A - 9b, c - 70 245 375 125 mJ 13.6b, c 4.5b, c - 50 to 175 W °C THERMAL RESISTANCE RATINGS Parameter Maximum Junction-to-Ambientb, d Maximum Junction-to-Case (Drain) t ≤ 10 sec Steady State Symbol RthJA RthJC Typical 8 0.33 Maximum 11 0.4 Unit °C/W Notes: a. Package Limited. b. Surface Mounted on 1" x 1" FR4 Board. c. t = 10 sec. d. Maximum under Steady State conditions is 40 °C/W. Document Number: 73474 S-71207-Rev. D, 18-Jun-07 www.vishay.com 1 SUM90P10-19L Vishay Siliconix SPECIFICATIONS TJ = 25 °C, unless otherwise noted Parameter Symbol Test Conditions Min VDS VGS = 0 V, ID = - 250 µA - 100 Typ Max Unit Static Drain-Source Breakdown Voltage VDS Temperature Coefficient ΔVDS/TJ VGS(th) Temperature Coefficient ΔVGS(th)/TJ ID = - 250 µA Gate-Source Threshold Voltage VGS(th) VDS = VGS , ID = - 250 µA Gate-Source Leakage IGSS VDS = 0 V, VGS = ± 20 V Zero Gate Voltage Drain Current IDSS On-State Drain Currenta ID(on) Drain-Source On-State Resistancea Forward Transconductancea V - 125 mV/°C 5.9 -1 -3 V ± 100 nA VDS = - 100 V, VGS = 0 V -1 VDS = - 100 V, VGS = 0 V, TJ = 175 °C - 500 VDS ≥ 10 V, VGS = - 10 V rDS(on) gfs - 90 µA A VGS = - 10 V, ID = - 20 A 0.0156 0.019 VGS = - 4.5 V, ID = - 15 A 0.0173 0.021 VDS = - 15 V, ID = - 20 A 80 Ω S b Dynamic Input Capacitance Ciss Output Capacitance Coss Reverse Transfer Capacitance Crss Total Gate Charge Qg Gate-Source Charge Qgs Gate-Drain Charge Qgd Gate Resistance Rg 11100 VDS = - 50 V, VGS = 0 V, f = 1 MHz VDS = - 50 V, VGS = - 10 V, ID = - 90 A Turn-On Delay Time Rise Time Turn-Off Delay Time Fall Time tr pF 1690 217 326 97 146 VDS = - 50 V, VGS = - 4.5 V, ID = - 90 A 42 f = 1 MHz 3.5 nC 51 td(on) td(off) 700 VDD = - 50 V, RL = 0.56 Ω ID ≅ - 90 A, VGEN = - 10 V, RG = 1 Ω tf Ω 20 30 510 855 145 220 870 1300 ns Drain-Source Body Diode Characteristics Continous Source-Drain Diode Current IS Pulse Diode Forward Currenta ISM Body Diode Voltage VSD TC = 25 °C - 90 A - 250 IS = - 20 A - 0.8 - 1.5 V 80 120 ns 220 330 nC Body Diode Reverse Recovery Time trr Body Diode Reverse Recovery Charge Qrr Reverse Recovery Fall Time ta 56 Reverse Recovery Rise Time tb 24 IF = - 20 A, di/dt = 100 A/µs, TJ = 25 °C ns Notes a. Pulse test; pulse width ≤ 300 µs, duty cycle ≤ 2 %. b. Guaranteed by design, not subject to production testing. Stresses beyond those listed under “Absolute Maximum Ratings” may cause permanent damage to the device. These are stress ratings only, and functional operation of the device at these or any other conditions beyond those indicated in the operational sections of the specifications is not implied. Exposure to absolute maximum rating conditions for extended periods may affect device reliability. www.vishay.com 2 Document Number: 73474 S-71207-Rev. D, 18-Jun-07 SUM90P10-19L Vishay Siliconix TYPICAL CHARACTERISTICS 25 °C, unless otherwise noted 180 40 VGS = 10 thru 4V 30 ID – Drain Current (A) ID – Drain-Current (A) 150 120 90 60 30 20 25 °C 10 3V TC = 125 °C 0 0 1 2 3 0 0.0 4 - 55 °C 1.0 VDS – Drain-to-Source Voltage (V) 2.0 Transfer Characteristics 0.030 15000 VGS = 4.5 V Ciss 12000 C – Capacitance (pF) RDS(on) – On-Resistance (Ω) 4.0 VGS – Gate-to-Source Voltage (V) Output Characteristics 0.020 VGS = 10 0.010 9000 6000 Crss 3000 0.000 Coss 0 0 20 40 60 80 100 120 0 20 ID – Drain Current (A) 40 80 100 Capacitance 10.0 2.5 VGS = 10 V I D = - 90 A 8.0 ID = 20 A rDS(on) – On-Resistance (Normalized) 2.1 VDS = 50 V 6.0 VDS = 80 V 4.0 2.0 0.0 0.0 60 VDS – Drain-to-Source (V) On-Resistance vs. Drain Current VGS – Gate-to-Source Voltage (V) 3.0 1.7 1.3 0.9 40.0 80.0 120.0 160.0 200.0 240.0 0.5 - 50 - 25 0 25 50 75 100 125 150 Qg – Total Gate Charge (nC) TJ – Junction Temperature (°C) Gate Charge On-Resistance vs. Junction Temperature Document Number: 73474 S-71207-Rev. D, 18-Jun-07 175 www.vishay.com 3 SUM90P10-19L Vishay Siliconix TYPICAL CHARACTERISTICS 25 °C, unless otherwise noted TJ = 150 C 0.10 RDS(on) – Drain-to-Source On-Resistance (Ω) IS – Source Current (A) 100 25 C 10 0.08 0.06 0.04 125 °C 0.02 25 °C 0.00 1 0.0 0.3 0.6 0.9 1.2 1 2 3 4 5 6 7 8 9 10 VGS – Gate-to-Source Voltage (V) VSD – Source-to-Drain Voltage (V) Source-Drain Diode Forward Voltage On-Resistance vs. Gate-to-Source Voltage 0.9 6000 0.7 5000 0.5 4000 Power (W) VGS(th) Variance (V) ID = 10 mA 0.3 3000 0.1 2000 - 0.1 1000 - 0.3 - 50 - 25 0 25 50 75 100 125 150 0 0.0001 175 0.001 TJ – Temperature (°C) 0.01 0.10 1 Time (sec) Single Pulse, Junction-to-Case (TC = 25 °C) Threshold Voltage 400 1000 350 ID – Drain Current (A) Power Dissipation (W) 300 250 200 150 100 100 *Limited by r DS(on) 10 µs 100 µs 10 1 ms 10 ms DC 1 Single pulse Tc = 25 °C 50 0 25 50 75 100 125 150 TC – Case-Temperature (°C) Power Derating (Junction-to-Case) www.vishay.com 4 175 0.1 0.1 100 1 10 VDS – Drain-to-Source Voltage (V) * VGS > minimum VGS at which rDS(on) is specified Safe Operating Area Document Number: 73474 S-71207-Rev. D, 18-Jun-07 SUM90P10-19L Vishay Siliconix TYPICAL CHARACTERISTICS 25 °C, unless otherwise noted 120 IDav – Peak Avalanche Curent (A) 1000 I D – Drain Current (A) 90 60 30 100 10 1 0.1 0 0 25 50 75 100 125 150 175 0.00001 TC – Case Temperature (°C) 0.001 0.01 0.1 1.0 tin – Time in Avalanche (Sec) Max Avalanche and Drain Current vs. Case Temperature Normalized Effective Transient Thermal Impedance 0.0001 Avalanche Current vs. Time 1 0.5 0.2 0.1 0.05 0.1 0.02 Single 0.01 0.0001 0.001 0.01 0.1 1 Square Wave Pulse Duration (Sec) Normalized Thermal Transient Impedance, Junction-to-Case Vishay Siliconix maintains worldwide manufacturing capability. Products may be manufactured at one of several qualified locations. Reliability data for Silicon Technology and Package Reliability represent a composite of all qualified locations. For related documents such as package/tape drawings, part marking, and reliability data, see http://www.vishay.com/ppg?73474. Document Number: 73474 S-71207-Rev. D, 18-Jun-07 www.vishay.com 5 Legal Disclaimer Notice Vishay Disclaimer All product specifications and data are subject to change without notice. Vishay Intertechnology, Inc., its affiliates, agents, and employees, and all persons acting on its or their behalf (collectively, “Vishay”), disclaim any and all liability for any errors, inaccuracies or incompleteness contained herein or in any other disclosure relating to any product. Vishay disclaims any and all liability arising out of the use or application of any product described herein or of any information provided herein to the maximum extent permitted by law. The product specifications do not expand or otherwise modify Vishay’s terms and conditions of purchase, including but not limited to the warranty expressed therein, which apply to these products. No license, express or implied, by estoppel or otherwise, to any intellectual property rights is granted by this document or by any conduct of Vishay. The products shown herein are not designed for use in medical, life-saving, or life-sustaining applications unless otherwise expressly indicated. Customers using or selling Vishay products not expressly indicated for use in such applications do so entirely at their own risk and agree to fully indemnify Vishay for any damages arising or resulting from such use or sale. Please contact authorized Vishay personnel to obtain written terms and conditions regarding products designed for such applications. Product names and markings noted herein may be trademarks of their respective owners. Document Number: 91000 Revision: 18-Jul-08 www.vishay.com 1