New Product Si7998DP Vishay Siliconix Dual N-Channel 30-V (D-S) MOSFET FEATURES PRODUCT SUMMARY RDS(on) (Ω) ID (A)a 0.0093 at VGS = 10 V 25 0.0124 at VGS = 4.5 V 25 0.0053 at VGS = 10 V 30 0.007 at VGS = 4.5 V 30 VDS (V) Channel-1 30 Channel-2 30 Qg (Typ.) 8.2 15.3 • Halogen-free According to IEC 61249-2-21 • TrenchFET® Power MOSFET • PWM Optimized APPLICATIONS • System Power DC/DC PowerPAK SO-8 S1 6.15 mm D1 5.15 mm 1 D2 G1 2 S2 3 G2 4 D1 8 D1 G1 7 G2 D2 6 D2 5 Bottom View Ordering Information: Si7998DP-T1-GE3 (Lead (Pb)-free and Halogen-free) S1 S2 N-Channel MOSFET N-Channel MOSFET ABSOLUTE MAXIMUM RATINGS TA = 25 °C, unless otherwise noted Parameter Symbol VDS Channel-1 Channel-2 Drain-Source Voltage 30 30 Gate-Source Voltage VGS ± 20 ± 20 TC = 25 °C 25a 30a TC = 70 °C 25a 30a Continuous Drain Current (TJ = 150 °C) TA = 25 °C ID TA = 70 °C IDM Pulsed Drain Current Source-Drain Current Diode Current TC = 25 °C TA = 25 °C IS Maximum Power Dissipation TC = 70 °C TA = 25 °C 21b, c 12b, c 60 17b, c 80 19 30a b, c 14 PD TA = 70 °C 4.0b, c 2.3b, c 2.5b, c TJ, Tstg Operating Junction and Storage Temperature Range 25 b, c 3.6 A 3.3b, c 40 3.0 22 TC = 25 °C V b, c 15 Unit W - 55 to 150 Soldering Recommendations (Peak Temperature)d, e °C 260 THERMAL RESISTANCE RATINGS Channel-1 Maximum Junction-to-Ambientb, f Maximum Junction-to-Case (Drain) Channel-2 Symbol Typ. Max. Typ. Max. t ≤ 10 s RthJA 26 35 22 31 Steady State RthJC 4 5.5 2.2 3.1 Parameter Unit °C/W Notes: a. Package Limited. b. Surface Mounted on 1" x 1" FR4 board. c. t = 10 s. d. See Solder Profile (www.vishay.com/ppg?73257). The PowerPAK SO-8 is a leadless package. The end of the lead terminal is exposed copper (not plated) as a result of the singulation process in manufacturing. A solder fillet at the exposed copper tip cannot be guaranteed and is not required to ensure adequate bottom side solder interconnection. e. Rework Conditions: manual soldering with a soldering iron is not recommended for leadless components. f. Maximum under Steady State conditions for channel 1 and channel 2 is 80 °C/W. Document Number: 68970 S09-0269-Rev. B, 16-Feb-09 www.vishay.com 1 New Product Si7998DP Vishay Siliconix SPECIFICATIONS TJ = 25 °C, unless otherwise noted Parameter Symbol Test Conditions Min. Typ. Max. Unit Static Drain-Source Breakdown Voltage VDS Temperature Coefficient VGS(th) Temperature Coefficient Gate Threshold Voltage Gate-Body Leakage Zero Gate Voltage Drain Current On-State Drain Currentb Drain-Source On-State Resistanceb Forward Transconductanceb VDS ΔVDS/TJ ΔVGS(th)/TJ VGS(th) IGSS IDSS ID(on) RDS(on) gfs VGS = 0 V, ID = 250 µA Ch-1 30 VGS = 0 V, ID = 250 µA Ch-2 30 ID = 250 µA Ch-1 ID = 250 µA Ch-2 26 ID = 250 µA Ch-1 - 5.6 ID = 250 µA Ch-2 VDS = VGS, ID = 250 µA Ch-1 1.2 2.5 VDS = VGS, ID = 250 µA Ch-2 1.2 2.5 VDS = 0 V, VGS = ± 20 V Ch-1 100 VDS = 0 V, VGS = ± 20 V Ch-2 100 VDS = 30 V, VGS = 0 V Ch-1 1 V 28 mV/°C -6 VDS = 30 V, VGS = 0 V Ch-2 1 VDS = 30 V, VGS = 0 V, TJ = 85 °C Ch-1 10 VDS = 30 V, VGS = 0 V, TJ = 85 °C Ch-2 10 VDS ≥ 5 V, VGS = 10 V Ch-1 30 VDS ≥ 5 V, VGS = 10 V Ch-2 30 VGS = 10 V, ID = 15 A Ch-1 0.0076 0.0093 VGS = 10 V, ID = 20 A Ch-2 0.0044 0.0053 VGS = 4.5 V, ID = 13 A Ch-1 0.0103 0.0124 VGS = 4.5 V, ID = 18 A Ch-2 0.0058 VDS = 10 V, ID = 15 A Ch-1 45 VDS = 10 V, ID = 20 A Ch-2 71 Ch-1 1100 Ch-2 2000 Ch-1 200 Ch-2 390 V nA µA A Ω 0.007 S Dynamica Input Capacitance Output Capacitance Reverse Transfer Capacitance Total Gate Charge Gate-Source Charge Gate-Drain Charge Gate Resistance Ciss Channel-1 VDS = 15 V, VGS = 0 V, f = 1 MHz Coss Crss Qg Channel-2 VDS = 15 V, VGS = 0 V, f = 1 MHz Ch-1 90 Ch-2 160 VDS = 15 V, VGS = 10 V, ID = 15 A Ch-1 17 VDS = 15 V, VGS = 10 V, ID = 20 A Ch-2 32 48 Ch-1 8.2 13 23 Rg 26 Channel-1 VDS = 15 V, VGS = 4.5 V, ID = 15 A Ch-2 15.3 Ch-1 3.2 Channel-2 VDS = 15 V, VGS = 4.5 V, ID = 20 A Ch-2 6.3 Ch-1 2.7 Ch-2 4.7 Ch-1 3.5 7 Ch-2 3.5 7 Qgs Qgd pF f = 1 MHz nC Ω Notes: a. Guaranteed by design, not subject to production testing. b. Pulse test; pulse width ≤ 300 µs, duty cycle ≤ 2 %. www.vishay.com 2 Document Number: 68970 S09-0269-Rev. B, 16-Feb-09 New Product Si7998DP Vishay Siliconix SPECIFICATIONS TJ = 25 °C, unless otherwise noted Parameter Symbol Test Conditions Min. Typ. Max. Ch-1 20 30 Ch-2 26 40 Ch-1 15 25 Ch-2 17 30 Ch-1 22 35 Ch-2 35 55 Ch-1 10 15 Ch-2 13 20 Ch-1 10 15 Ch-2 13 20 Ch-1 10 15 Ch-2 10 15 Ch-1 22 35 Ch-2 32 50 Ch-1 10 15 Ch-2 10 15 Unit Dynamica td(on) Turn-On Delay Time tr Rise Time td(off) Turn-Off Delay Time tf Fall Time td(on) Turn-On Delay Time tr Rise Time Fall Time Channel-2 VDD = 15 V, RL = 1.5 Ω ID ≅ 10 A, VGEN = 4.5 V, Rg = 1 Ω Channel-1 VDD = 15 V, RL = 1.5 Ω ID ≅ 10 A, VGEN = 10 V, Rg = 1 Ω tf Channel-2 VDD = 15 V, RL = 1.5 Ω ID ≅ 10 A, VGEN = 10 V, Rg = 1 Ω IS TC = 25 °C td(off) Turn-Off Delay Time Channel-1 VDD = 15 V, RL = 1.5 Ω ID ≅ 10 A, VGEN = 4.5 V, Rg = 1 Ω ns Drain-Source Body Diode Characteristics Continuous Source-Drain Diode Current Pulse Diode Forward Current a Body Diode Voltage ISM VSD Ch-1 13 Ch-2 30 Ch-1 30 Ch-2 80 IS = 10 A Ch-1 0.8 1.2 IS = 10 A Ch-2 0.8 1.2 Ch-1 20 30 Ch-2 27 40 Body Diode Reverse Recovery Time trr Body Diode Reverse Recovery Charge Qrr Channel-1 IF = 10 A, dI/dt = 100 A/µs, TJ = 25 °C Ch-1 15 25 Ch-2 22 35 Reverse Recovery Fall Time ta Channel-2 IF = 10 A, dI/dt = 100 A/µs, TJ = 25 °C Ch-1 11 Ch-2 15 Ch-1 9 Ch-2 12 Reverse Recovery Rise Time tb A V ns nC ns Notes: a. Guaranteed by design, not subject to production testing. b. Pulse test; pulse width ≤ 300 µs, duty cycle ≤ 2 %. Stresses beyond those listed under “Absolute Maximum Ratings” may cause permanent damage to the device. These are stress ratings only, and functional operation of the device at these or any other conditions beyond those indicated in the operational sections of the specifications is not implied. Exposure to absolute maximum rating conditions for extended periods may affect device reliability. Document Number: 68970 S09-0269-Rev. B, 16-Feb-09 www.vishay.com 3 New Product Si7998DP Vishay Siliconix CHANNEL-1 TYPICAL CHARACTERISTICS 25 °C, unless otherwise noted 60 20 16 VGS = 10 V thru 4 V I D - Drain Current (A) I D - Drain Current (A) 50 40 30 20 VGS = 3 V 12 TC = 25 °C 8 4 10 TC = 125 °C 0 0.0 0.5 1.0 1.5 2.0 2.5 0 0.0 3.0 TC = - 55 °C 0.5 1.0 VDS - Drain-to-Source Voltage (V) 2.0 2.5 3.0 3.5 4.0 VGS - Gate-to-Source Voltage (V) Output Characteristics Transfer Characteristics 1500 0.013 1200 VGS = 4.5 V 0.011 Ciss C - Capacitance (pF) R DS(on) - On-Resistance (Ω) 1.5 0.009 VGS = 10 V 900 600 Coss 0.007 300 Crss 0 0.005 0 10 20 30 40 50 0 60 5 10 ID - Drain Current (A) 20 25 30 Capacitance On-Resistance vs. Drain Current 10 1.8 ID = 15 A ID = 15 A 1.6 8 VDS = 15 V 6 VDS = 24 V 4 2 1.4 (Normalized) R DS(on) - On-Resistance VGS - Gate-to-Source Voltage (V) 15 VDS - Drain-to-Source Voltage (V) 1.2 1.0 0.8 VGS = 4.5 V, 10 V 0 0 3 6 9 12 Qg - Total Gate Charge (nC) Gate Charge www.vishay.com 4 15 18 0.6 - 50 - 25 0 25 50 75 100 125 150 TJ - Junction Temperature (°C) On-Resistance vs. Junction Temperature Document Number: 68970 S09-0269-Rev. B, 16-Feb-09 New Product Si7998DP Vishay Siliconix CHANNEL-1 TYPICAL CHARACTERISTICS 25 °C, unless otherwise noted 0.030 100 ID = 15 A R DS(on) - On-Resistance (Ω) I S - Source Current (A) 0.025 TJ = 150 °C 10 TJ = 25 °C 0.020 0.015 TJ = 125 °C 0.010 0.005 1 0.0 TJ = 25 °C 0.000 0.2 0.4 0.6 0.8 1.0 0 1.2 1 2 3 4 5 6 7 8 9 10 VSD - Source-to-Drain Voltage (V) VGS - Gate-to-Source Voltage (V) Source-Drain Diode Forward Voltage On-Resistance vs. Gate-to-Source Voltage 40 2.4 2.2 32 2.0 Power (W) VGS(th) (V) ID = 250 µA 1.8 1.6 24 16 1.4 8 1.2 1.0 - 50 - 25 0 25 50 75 100 125 0 0.001 150 0.01 0.1 1 10 TJ - Temperature (°C) Time (s) Threshold Voltage Single Pulse Power 100 1000 100 Limited by RDS(on)* 100 µs I D - Drain Current (A) 10 1 ms 1 10 ms 100 ms 1s 10 s 0.1 TA = 25 °C Single Pulse DC BVDSS Limited 0.01 0.1 1 10 100 VDS - Drain-to-Source Voltage (V) * VGS > minimum VGS at which RDS(on) is specified Safe Operating Area, Junction-to-Ambient Document Number: 68970 S09-0269-Rev. B, 16-Feb-09 www.vishay.com 5 New Product Si7998DP Vishay Siliconix 50 25 40 20 30 Power (W) I D - Drain Current (A) CHANNEL-1 TYPICAL CHARACTERISTICS 25 °C, unless otherwise noted Package Limited 20 10 15 10 5 0 0 0 25 50 75 100 TC - Case Temperature (°C) Current Derating* 125 150 25 50 75 100 125 150 TC - Case Temperature (°C) Power Derating * The power dissipation PD is based on TJ(max) = 150 °C, using junction-to-case thermal resistance, and is more useful in settling the upper dissipation limit for cases where additional heatsinking is used. It is used to determine the current rating, when this rating falls below the package limit. www.vishay.com 6 Document Number: 68970 S09-0269-Rev. B, 16-Feb-09 New Product Si7998DP Vishay Siliconix CHANNEL-1 TYPICAL CHARACTERISTICS 25 °C, unless otherwise noted 1 Normalized Effective Transient Thermal Impedance Duty Cycle = 0.5 0.2 0.1 Notes: 0.1 PDM 0.05 t1 0.02 t2 1. Duty Cycle, D = t1 t2 2. Per Unit Base = RthJA = 80 °C/W 3. TJM - TA = PDMZthJA(t) Single Pulse 4. Surface Mounted 0.01 10 -4 10 -3 10 -2 10 -1 1 Square Wave Pulse Duration (s) 100 10 1000 Normalized Thermal Transient Impedance, Junction-to-Ambient 1 Normalized Effective Transient Thermal Impedance Duty Cycle = 0.5 0.2 0.1 0.1 0.05 0.02 Single Pulse 0.01 10 -4 10 -3 10 -2 10 -1 1 Square Wave Pulse Duration (s) Normalized Thermal Transient Impedance, Junction-to-Case Document Number: 68970 S09-0269-Rev. B, 16-Feb-09 www.vishay.com 7 New Product Si7998DP Vishay Siliconix CHANNEL-2 TYPICAL CHARACTERISTICS 25 °C, unless otherwise noted 80 20 16 TC = - 55 °C I D - Drain Current (A) I D - Drain Current (A) VGS = 10 V thru 4 V 60 40 VGS = 3 V 12 8 TC = 25 °C 20 4 TC = 125 °C 0 0.0 0.5 1.0 1.5 2.0 2.5 0 0.0 3.0 0.5 1.0 1.5 2.0 2.5 3.0 VGS - Gate-to-Source Voltage (V) VDS - Drain-to-Source Voltage (V) Output Characteristics Transfer Characteristics 0.008 2500 0.007 2000 VGS = 4.5 V C - Capacitance (pF) R DS(on) - On-Resistance (Ω) Ciss 0.006 0.005 VGS = 10 V 1500 1000 Coss 0.004 500 0.003 0 0 20 40 60 80 Crss 0 5 ID - Drain Current (A) 10 20 25 30 VDS - Drain-to-Source Voltage (V) On-Resistance vs. Drain Current Capacitance 10 1.8 ID = 20 A ID = 20 A 1.6 VDS = 15 V 6 VDS = 24 V 4 2 (Normalized) 8 R DS(on) - On-Resistance VGS - Gate-to-Source Voltage (V) 15 1.4 1.2 1.0 VGS = 4.5 V 0.8 VGS = 10 V 0 0 7 14 21 Qg - Total Gate Charge (nC) Gate Charge www.vishay.com 8 28 35 0.6 - 50 - 25 0 25 50 75 100 125 150 TJ - Junction Temperature (°C) On-Resistance vs. Junction Temperature Document Number: 68970 S09-0269-Rev. B, 16-Feb-09 New Product Si7998DP Vishay Siliconix CHANNEL-2 TYPICAL CHARACTERISTICS 25 °C, unless otherwise noted 100 0.020 R DS(on) - On-Resistance (Ω) I S - Source Current (A) ID = 20 A TJ = 150 °C 10 TJ = 25 °C 0.015 0.010 TJ = 125 °C 0.005 TJ = 25 °C 1 0.0 0.000 0.2 0.4 0.6 0.8 1.0 0 1.2 2 VSD - Source-to-Drain Voltage (V) 4 6 8 10 VGS - Gate-to-Source Voltage (V) Source-Drain Diode Forward Voltage On-Resistance vs. Gate-to-Source Voltage 2.4 50 2.2 40 ID = 250 µA Power (W) VGS(th) (V) 2.0 1.8 1.6 30 20 1.4 10 1.2 1.0 - 50 - 25 0 25 50 75 100 125 0 0.001 150 0.01 0.1 1 10 TJ - Temperature (°C) Time (s) Reverse Current vs. Junction Temperature Single Pulse Power 100 1000 100 Limited by RDS(on)* 100 µs I D - Drain Current (A) 10 1 ms 10 ms 1 100 ms 1s 10 s 0.1 DC TA = 25 °C Single Pulse 0.01 0.01 0.1 BVDSS Limited 1 10 100 VDS - Drain-to-Source Voltage (V) * VGS > minimum VGS at which RDS(on) is specified Safe Operating Area, Junction-to-Ambient Document Number: 68970 S09-0269-Rev. B, 16-Feb-09 www.vishay.com 9 New Product Si7998DP Vishay Siliconix CHANNEL-2 TYPICAL CHARACTERISTICS 25 °C, unless otherwise noted 50 80 I D - Drain Current (A) I D - Drain Current (A) 40 60 40 Package Limited 30 20 20 10 0 0 0 25 50 75 100 TC - Case Temperature (°C) Current Derating* 125 150 25 50 75 100 125 150 TC - Case Temperature (°C) Power Derating * The power dissipation PD is based on TJ(max) = 150 °C, using junction-to-case thermal resistance, and is more useful in settling the upper dissipation limit for cases where additional heatsinking is used. It is used to determine the current rating, when this rating falls below the package limit. www.vishay.com 10 Document Number: 68970 S09-0269-Rev. B, 16-Feb-09 New Product Si7998DP Vishay Siliconix CHANNEL-2 TYPICAL CHARACTERISTICS 25 °C, unless otherwise noted 1 Normalized Effective Transient Thermal Impedance Duty Cycle = 0.5 0.2 0.1 Notes: 0.1 PDM 0.05 t1 t2 1. Duty Cycle, D = t1 t2 2. Per Unit Base = RthJA = 80 °C/W 0.02 3. TJM - TA = PDMZthJA(t) Single Pulse 4. Surface Mounted 0.01 10 -4 10 -3 10 -2 10 -1 1 Square Wave Pulse Duration (s) 100 10 1000 Normalized Thermal Transient Impedance, Junction-to-Ambient 1 Normalized Effective Transient Thermal Impedance Duty Cycle = 0.5 0.2 0.1 0.1 0.05 0.02 Single Pulse 0.01 10 -4 10 -3 10 -2 10 -1 1 Square Wave Pulse Duration (s) Normalized Thermal Transient Impedance, Junction-to-Case Vishay Siliconix maintains worldwide manufacturing capability. Products may be manufactured at one of several qualified locations. Reliability data for Silicon Technology and Package Reliability represent a composite of all qualified locations. For related documents such as package/tape drawings, part marking, and reliability data, see www.vishay.com/ppg?68970. Document Number: 68970 S09-0269-Rev. B, 16-Feb-09 www.vishay.com 11 Legal Disclaimer Notice Vishay Disclaimer All product specifications and data are subject to change without notice. Vishay Intertechnology, Inc., its affiliates, agents, and employees, and all persons acting on its or their behalf (collectively, “Vishay”), disclaim any and all liability for any errors, inaccuracies or incompleteness contained herein or in any other disclosure relating to any product. Vishay disclaims any and all liability arising out of the use or application of any product described herein or of any information provided herein to the maximum extent permitted by law. The product specifications do not expand or otherwise modify Vishay’s terms and conditions of purchase, including but not limited to the warranty expressed therein, which apply to these products. No license, express or implied, by estoppel or otherwise, to any intellectual property rights is granted by this document or by any conduct of Vishay. The products shown herein are not designed for use in medical, life-saving, or life-sustaining applications unless otherwise expressly indicated. Customers using or selling Vishay products not expressly indicated for use in such applications do so entirely at their own risk and agree to fully indemnify Vishay for any damages arising or resulting from such use or sale. Please contact authorized Vishay personnel to obtain written terms and conditions regarding products designed for such applications. Product names and markings noted herein may be trademarks of their respective owners. Document Number: 91000 Revision: 18-Jul-08 www.vishay.com 1