SiS496EDNT Vishay Siliconix N-Channel 30 V (D-S) MOSFET FEATURES PRODUCT SUMMARY RDS(on) () Max. ID (A)a 0.0048 at VGS = 10 V 50 0.0062 at VGS = 4.5 V 50 VDS (V) 30 TrenchFET® Power MOSFET 100 % Rg and UIS tested Thin 0.75 mm height Typical ESD performance 2500 V • Material categorization: For definitions of compliance please see www.vishay.com/doc?99912 • • • • Qg (Typ.) 14 nC Thin PowerPAK® 1212-8 S 3.30 mm 3.30 mm 1 S 2 APPLICATIONS S 3 4 • Battery Switch • Power Management • For Mobile Computing D 8 0.75 mm D 7 D 6 D • DC/DC Converter G D G 5 Bottom View Ordering Information: SiS496EDNT-T1-GE3 (Lead (Pb)-free and Halogen-free) N-Channel MOSFET S ABSOLUTE MAXIMUM RATINGS (TA = 25 °C, unless otherwise noted) Parameter Drain-Source Voltage Symbol VDS Limit Gate-Source Voltage VGS ± 20 TC = 70 °C 50a ID TA = 25 °C 20.4b, c Pulsed Drain Current (t = 100 µs) IDM 200 Avalanche Current IAS 25 L = 0.1 mH Continuous Source-Drain Diode Current EAS TC = 25 °C A 3.2b, c TC = 25 °C 52 33 PD TA = 25 °C W 3.8b, c 2b, c TA = 70 °C Operating Junction and Storage Temperature Range mJ 31 43.3 IS TA = 25 °C TC = 70 °C Maximum Power Dissipation A 16.3b, c TA = 70 °C Avalanche Energy V 50a TC = 25 °C Continuous Drain Current (TJ = 150 °C) Unit 30 TJ, Tstg - 55 to 150 Soldering Recommendations (Peak Temperature)d, e °C 260 THERMAL RESISTANCE RATINGS Parameter b, f Maximum Junction-to-Ambient Maximum Junction-to-Case (Drain) Symbol Typical Maximum t 10 s RthJA 24 33 Steady State RthJC 1.9 2.4 Unit °C/W Notes: a. Package limited. b. Surface mounted on 1" x 1" FR4 board. c. t = 10 s. d. See solder profile (www.vishay.com/doc?73257). The Thin PowerPAK 1212-8 is a leadless package. The end of the lead terminal is exposedcopper (not plated) as a result of the singulation process in manufacturing. A solder fillet at the exposed copper tip cannot be guaranteed and is not required to ensure adequate bottom side solder interconnection. e. Rework conditions: manual soldering with a soldering iron is not recommended for leadless components. f. Maximum under steady state conditions is 81 °C/W. Document Number: 62867 S13-1945-Rev. B, 16-Sep-13 For technical questions, contact: [email protected] www.vishay.com 1 This document is subject to change without notice. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000 SiS496EDNT Vishay Siliconix SPECIFICATIONS (TJ = 25 °C, unless otherwise noted) Parameter Symbol Test Conditions Min. VDS VGS = 0 V, ID = 250 µA 30 Typ. Max. Unit Static Drain-Source Breakdown Voltage VDS/TJ VDS Temperature Coefficient VGS(th) Temperature Coefficient VGS(th)/TJ Gate-Source Threshold Voltage VGS(th) IGSS Gate-Source Leakage Zero Gate Voltage Drain Current IDSS On-State Drain Currenta ID(on) Drain-Source On-State Resistancea Forward Transconductancea RDS(on) gfs 30 ID = 250 µA VDS = VGS , ID = 250 µA V mV/°C - 5.2 1 2.5 VDS = 0 V, VGS = ± 20 V ± 20 VDS = 0 V, VGS = ± 10 V ±1 VDS = 30 V, VGS = 0 V 1 VDS = 30 V, VGS = 0 V, TJ = 55 °C VDS 5 V, VGS = 10 V V µA 5 20 A VGS 10 V, ID = 20 A 0.0040 0.0048 VGS 4.5 V, ID = 18 A 0.0051 0.0062 VDS = 15 V, ID = 20 A 80 S Dynamicb Input Capacitance Ciss Output Capacitance Coss Reverse Transfer Capacitance Crss Total Gate Charge Qg Gate-Source Charge Qgs Gate-Drain Charge Qgd Gate Resistance Rg 1515 VDS = 15 V, VGS = 0 V, f = 1 MHz Fall Time Turn-On Delay Time 0.2 1.2 2.4 24 40 tf 10 20 td(on) 10 20 VDD = 15 V, RL = 1.5 ID 10 A, VGEN = 4.5 V, Rg = 1 VDD = 15 V, RL = 1.5 ID 10 A, VGEN = 10 V, Rg = 1 tf Fall Time nC 4.2 f = 1 MHz 30 td(off) Turn-Off Delay Time 4.5 VDS = 10 V, VGS = 4.5 V, ID = 20 A 190 tr Rise Time 45 21 20 td(off) Turn-Off Delay Time 29 14 125 tr Rise Time pF 175 VDS = 15 V, VGS = 10 V, ID = 20 A td(on) Turn-On Delay Time 322 16 24 25 40 3 8 ns Drain-Source Body Diode Characteristics Continuous Source-Drain Diode Current IS Pulse Diode Forward Current (t = 100 µs) ISM VSD Body Diode Voltage TC = 25 °C 50 200 IS = 10 A, VGS 0 V 0.8 1.2 A V Body Diode Reverse Recovery Time trr 20 40 ns Body Diode Reverse Recovery Charge Qrr 10 20 nC Reverse Recovery Fall Time ta Reverse Recovery Rise Time tb IF = 10 A, dI/dt = 100 A/µs, TJ = 25 °C 8 12 ns Notes: a. Pulse test; pulse width 300 µs, duty cycle 2 %. b. Guaranteed by design, not subject to production testing. Stresses beyond those listed under “Absolute Maximum Ratings” may cause permanent damage to the device. These are stress ratings only, and functional operation of the device at these or any other conditions beyond those indicated in the operational sections of the specifications is not implied. Exposure to absolute maximum rating conditions for extended periods may affect device reliability. www.vishay.com 2 For technical questions, contact: [email protected] Document Number: 62867 S13-1945-Rev. B, 16-Sep-13 This document is subject to change without notice. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000 SiS496EDNT Vishay Siliconix TYPICAL CHARACTERISTICS (25 °C, unless otherwise noted) 10-1 0.050 TJ = 25 °C 10-2 10-3 IGSS - Gate Current (A) IGSS - Gate Current (mA) 0.040 0.030 0.020 10-4 TJ = 150 °C -5 10 10-6 TJ = 25 °C 10-7 0.010 10-8 10-9 0.000 0 6 12 18 24 30 0 11 VGS - Gate-Source Voltage (V) 22 33 44 VGS - Gate-to-Source Voltage (V) Gate Source Voltage vs. Gate Current Gate Source Voltage vs. Gate Current 2 50 VGS = 10 V thru 4 V VGS = 3 V 1.5 ID - Drain Current (A) ID - Drain Current (A) 40 30 20 TC = 25 °C 1 0.5 10 TC = 125 °C 0 0 0.5 1 1.5 TC = - 55 °C 0 2 0 0.6 VDS - Drain-to-Source Voltage (V) Output Characteristics 1.8 2.4 3 Transfer Characteristics 0.0075 2100 1680 0.006 C - Capacitance (pF) RDS(on) - On-Resistance (Ω) 1.2 VGS - Gate-to-Source Voltage (V) VGS = 4.5 V 0.0045 VGS = 10 V 0.003 Ciss 1260 840 420 Coss Crss 0 0.0015 0 10 20 30 40 ID - Drain Current (A) 50 0 6 12 On-Resistance vs. Drain Current Document Number: 62867 S13-1945-Rev. B, 16-Sep-13 18 24 30 VDS - Drain-to-Source Voltage (V) For technical questions, contact: [email protected] Capacitance www.vishay.com 3 This document is subject to change without notice. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000 SiS496EDNT Vishay Siliconix TYPICAL CHARACTERISTICS (25 °C, unless otherwise noted) 2 10 RDS(on) - On-Resistance (Normalized) VGS - Gate-to-Source Voltage (V) ID = 20 A VDS = 8 V ID = 20 A 8 VDS = 15 V 6 4 VDS = 24 V 2 1.65 VGS = 4.5 V 1.3 0.95 0 0 5 10 15 20 VGS = 10 V 0.6 25 - 50 - 25 0 Qg - Total Gate Charge (nC) 25 50 75 100 125 150 TJ - Junction Temperature (°C) Gate Charge On-Resistance vs. Junction Temperature 100 50 TJ = 150 °C 10 Power (W) IS - Source Current (A) 40 TJ = 25 °C 30 20 1 10 0.1 0.0 0.3 0.6 0.9 0.1 1 10 100 600 VSD - Source-to-Drain Voltage (V) Time (s) Source-Drain Diode Forward Voltage Single Pulse Power (Junction-to-Ambient) 0.012 2 ID = 20 A RDS(on) - On-Resistance (Ω) ID = 250 μA 1.75 VGS(th) (V) 0 0.01 1.2 1.5 1.25 1 - 50 - 25 www.vishay.com 4 0 25 50 75 100 125 150 0.009 TJ = 125 °C 0.006 TJ = 25 °C 0.003 0.000 0 2 4 6 8 10 TJ - Temperature (°C) VGS - Gate-to-Source Voltage (V) Threshold Voltage On-Resistance vs. Gate-to-Source Voltage For technical questions, contact: [email protected] Document Number: 62867 S13-1945-Rev. B, 16-Sep-13 This document is subject to change without notice. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000 SiS496EDNT Vishay Siliconix TYPICAL CHARACTERISTICS (25 °C, unless otherwise noted) 1000 90 100 Limited by RDS(on)* 72 ID - Drain Current (A) ID - Drain Current (A) 100 μs 10 1 ms 10 ms 1 100 ms 10s, 1 s 0.1 DC, 54 36 18 0.01 TA = 25 °C Single Pulse BVDSS Limited 0.001 0 0.1 1 10 100 VDS - Drain-to-Source Voltage (V) * VGS > minimum VGS at which RDS(on) is specified Safe Operating Area, Junction-to-Ambient 0 25 50 75 100 125 150 TC - Case Temperature (°C) Current Derating* 64 Power (W) 48 32 16 0 0 25 50 75 100 125 150 TC - Case Temperature (°C) Power Junction-to-Case * The power dissipation PD is based on TJ(max.) = 150 °C, using junction-to-case thermal resistance, and is more useful in settling the upper dissipation limit for cases where additional heatsinking is used. It is used to determine the current rating, when this rating falls below the package limit. Document Number: 62867 S13-1945-Rev. B, 16-Sep-13 For technical questions, contact: [email protected] www.vishay.com 5 This document is subject to change without notice. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000 SiS496EDNT Vishay Siliconix TYPICAL CHARACTERISTICS (25 °C, unless otherwise noted) 2 Normalized Effective Transient Thermal Impedance 1 Duty Cycle = 0.5 0.2 Notes: 0.1 PDM 0.1 0.05 t1 t2 1. Duty Cycle, D = 0.02 t1 t2 2. Per Unit Base = R thJA = 81 °C/W 3. T JM - TA = PDMZthJA(t) 4. Surface Mounted Single Pulse 0.01 10-4 10-3 10-2 10-1 1 10 100 600 Square Wave Pulse Duration (s) Normalized Thermal Transient Impedance, Junction-to-Ambient 2 Normalized Effective Transient Thermal Impedance 1 Duty Cycle = 0.5 0.2 0.1 0.1 Single Pulse 0.05 0.02 0.01 10-4 10-3 10-2 Square Wave Pulse Duration (s) 10-1 1 Normalized Thermal Transient Impedance, Junction-to-Case Vishay Siliconix maintains worldwide manufacturing capability. Products may be manufactured at one of several qualified locations. Reliability data for Silicon Technology and Package Reliability represent a composite of all qualified locations. For related documents such as package/tape drawings, part marking, and reliability data, see www.vishay.com/ppg?62867. www.vishay.com 6 For technical questions, contact: [email protected] Document Number: 62867 S13-1945-Rev. B, 16-Sep-13 This document is subject to change without notice. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000 Package Information www.vishay.com Vishay Siliconix PowerPAK® 1212-8T MILLIMETERS INCHES DIM. MIN. NOM. MAX. MIN. NOM. A 0.70 0.75 0.80 0.028 0.030 MAX. 0.031 A1 0.00 - 0.05 0.000 - 0.002 b 0.23 0.30 0.41 0.009 0.012 0.016 c 0.23 0.28 0.33 0.009 0.011 0.013 D 3.20 3.30 3.40 0.126 0.130 0.134 D1 2.95 3.05 3.15 0.116 0.120 0.124 D2 1.98 2.11 2.24 0.078 0.083 0.088 D3 0.48 - 0.89 0.019 - 0.035 D4 0.47 TYP. 0.0185 TYP. D5 2.3 TYP. 0.090 TYP. E 3.20 3.30 3.40 0.126 0.130 0.134 E1 2.95 3.05 3.15 0.116 0.120 0.124 E2 1.47 1.60 1.73 0.058 0.063 0.068 E3 1.75 1.85 1.98 0.069 0.073 0.078 0.34 TYP. E4 0.013 TYP. e 0.65 BSC 0.026 BSC K 0.86 TYP. 0.034 TYP. K1 0.35 - - 0.014 - - H 0.30 0.41 0.51 0.012 0.016 0.020 L 0.30 0.43 0.56 0.012 0.017 0.022 L1 0.06 0.13 0.20 0.002 0.005 0.008 0° - 12° 0° - 12° W 0.15 0.25 0.36 0.006 0.010 0.014 M 0.125 TYP. 0.005 TYP. ECN: T13-0056-Rev. A, 18-Feb-13 DWG: 6012 Revison: 18-Feb-13 1 Document Number: 62836 THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000 Legal Disclaimer Notice www.vishay.com Vishay Disclaimer ALL PRODUCT, PRODUCT SPECIFICATIONS AND DATA ARE SUBJECT TO CHANGE WITHOUT NOTICE TO IMPROVE RELIABILITY, FUNCTION OR DESIGN OR OTHERWISE. Vishay Intertechnology, Inc., its affiliates, agents, and employees, and all persons acting on its or their behalf (collectively, “Vishay”), disclaim any and all liability for any errors, inaccuracies or incompleteness contained in any datasheet or in any other disclosure relating to any product. Vishay makes no warranty, representation or guarantee regarding the suitability of the products for any particular purpose or the continuing production of any product. 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Vishay Intertechnology, Inc. hereby certifies that all its products that are identified as Halogen-Free follow Halogen-Free requirements as per JEDEC JS709A standards. Please note that some Vishay documentation may still make reference to the IEC 61249-2-21 definition. We confirm that all the products identified as being compliant to IEC 61249-2-21 conform to JEDEC JS709A standards. Revision: 02-Oct-12 1 Document Number: 91000