SiS496EDNT Datasheet

SiS496EDNT
Vishay Siliconix
N-Channel 30 V (D-S) MOSFET
FEATURES
PRODUCT SUMMARY
RDS(on) () Max.
ID (A)a
0.0048 at VGS = 10 V
50
0.0062 at VGS = 4.5 V
50
VDS (V)
30
TrenchFET® Power MOSFET
100 % Rg and UIS tested
Thin 0.75 mm height
Typical ESD performance 2500 V
• Material categorization:
For definitions of compliance please see
www.vishay.com/doc?99912
•
•
•
•
Qg (Typ.)
14 nC
Thin PowerPAK® 1212-8
S
3.30 mm
3.30 mm
1
S
2
APPLICATIONS
S
3
4
• Battery Switch
• Power Management
• For Mobile Computing
D
8
0.75 mm
D
7
D
6
D
• DC/DC Converter
G
D
G
5
Bottom View
Ordering Information:
SiS496EDNT-T1-GE3 (Lead (Pb)-free and Halogen-free)
N-Channel MOSFET
S
ABSOLUTE MAXIMUM RATINGS (TA = 25 °C, unless otherwise noted)
Parameter
Drain-Source Voltage
Symbol
VDS
Limit
Gate-Source Voltage
VGS
± 20
TC = 70 °C
50a
ID
TA = 25 °C
20.4b, c
Pulsed Drain Current (t = 100 µs)
IDM
200
Avalanche Current
IAS
25
L = 0.1 mH
Continuous Source-Drain Diode Current
EAS
TC = 25 °C
A
3.2b, c
TC = 25 °C
52
33
PD
TA = 25 °C
W
3.8b, c
2b, c
TA = 70 °C
Operating Junction and Storage Temperature Range
mJ
31
43.3
IS
TA = 25 °C
TC = 70 °C
Maximum Power Dissipation
A
16.3b, c
TA = 70 °C
Avalanche Energy
V
50a
TC = 25 °C
Continuous Drain Current (TJ = 150 °C)
Unit
30
TJ, Tstg
- 55 to 150
Soldering Recommendations (Peak Temperature)d, e
°C
260
THERMAL RESISTANCE RATINGS
Parameter
b, f
Maximum Junction-to-Ambient
Maximum Junction-to-Case (Drain)
Symbol
Typical
Maximum
t  10 s
RthJA
24
33
Steady State
RthJC
1.9
2.4
Unit
°C/W
Notes:
a. Package limited.
b. Surface mounted on 1" x 1" FR4 board.
c. t = 10 s.
d. See solder profile (www.vishay.com/doc?73257). The Thin PowerPAK 1212-8 is a leadless package. The end of the lead terminal is exposedcopper (not plated) as a result of the singulation process in manufacturing. A solder fillet at the exposed copper tip cannot be guaranteed and is not required to ensure adequate bottom side solder interconnection.
e. Rework conditions: manual soldering with a soldering iron is not recommended for leadless components.
f. Maximum under steady state conditions is 81 °C/W.
Document Number: 62867
S13-1945-Rev. B, 16-Sep-13
For technical questions, contact: [email protected]
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1
This document is subject to change without notice.
THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
SiS496EDNT
Vishay Siliconix
SPECIFICATIONS (TJ = 25 °C, unless otherwise noted)
Parameter
Symbol
Test Conditions
Min.
VDS
VGS = 0 V, ID = 250 µA
30
Typ.
Max.
Unit
Static
Drain-Source Breakdown Voltage
VDS/TJ
VDS Temperature Coefficient
VGS(th) Temperature Coefficient
VGS(th)/TJ
Gate-Source Threshold Voltage
VGS(th)
IGSS
Gate-Source Leakage
Zero Gate Voltage Drain Current
IDSS
On-State Drain Currenta
ID(on)
Drain-Source On-State Resistancea
Forward Transconductancea
RDS(on)
gfs
30
ID = 250 µA
VDS = VGS , ID = 250 µA
V
mV/°C
- 5.2
1
2.5
VDS = 0 V, VGS = ± 20 V
± 20
VDS = 0 V, VGS = ± 10 V
±1
VDS = 30 V, VGS = 0 V
1
VDS = 30 V, VGS = 0 V, TJ = 55 °C
VDS 5 V, VGS = 10 V
V
µA
5
20
A
VGS 10 V, ID = 20 A
0.0040
0.0048
VGS 4.5 V, ID = 18 A
0.0051
0.0062
VDS = 15 V, ID = 20 A
80

S
Dynamicb
Input Capacitance
Ciss
Output Capacitance
Coss
Reverse Transfer Capacitance
Crss
Total Gate Charge
Qg
Gate-Source Charge
Qgs
Gate-Drain Charge
Qgd
Gate Resistance
Rg
1515
VDS = 15 V, VGS = 0 V, f = 1 MHz
Fall Time
Turn-On Delay Time
0.2
1.2
2.4
24
40
tf
10
20
td(on)
10
20
VDD = 15 V, RL = 1.5 
ID  10 A, VGEN = 4.5 V, Rg = 1 
VDD = 15 V, RL = 1.5 
ID  10 A, VGEN = 10 V, Rg = 1 
tf
Fall Time
nC
4.2
f = 1 MHz
30
td(off)
Turn-Off Delay Time
4.5
VDS = 10 V, VGS = 4.5 V, ID = 20 A
190
tr
Rise Time
45
21
20
td(off)
Turn-Off Delay Time
29
14
125
tr
Rise Time
pF
175
VDS = 15 V, VGS = 10 V, ID = 20 A
td(on)
Turn-On Delay Time
322
16
24
25
40
3
8

ns
Drain-Source Body Diode Characteristics
Continuous Source-Drain Diode Current
IS
Pulse Diode Forward Current (t = 100 µs)
ISM
VSD
Body Diode Voltage
TC = 25 °C
50
200
IS = 10 A, VGS 0 V
0.8
1.2
A
V
Body Diode Reverse Recovery Time
trr
20
40
ns
Body Diode Reverse Recovery Charge
Qrr
10
20
nC
Reverse Recovery Fall Time
ta
Reverse Recovery Rise Time
tb
IF = 10 A, dI/dt = 100 A/µs, TJ = 25 °C
8
12
ns
Notes:
a. Pulse test; pulse width  300 µs, duty cycle  2 %.
b. Guaranteed by design, not subject to production testing.
Stresses beyond those listed under “Absolute Maximum Ratings” may cause permanent damage to the device. These are stress ratings only, and functional operation
of the device at these or any other conditions beyond those indicated in the operational sections of the specifications is not implied. Exposure to absolute maximum
rating conditions for extended periods may affect device reliability.
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For technical questions, contact: [email protected]
Document Number: 62867
S13-1945-Rev. B, 16-Sep-13
This document is subject to change without notice.
THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
SiS496EDNT
Vishay Siliconix
TYPICAL CHARACTERISTICS (25 °C, unless otherwise noted)
10-1
0.050
TJ = 25 °C
10-2
10-3
IGSS - Gate Current (A)
IGSS - Gate Current (mA)
0.040
0.030
0.020
10-4
TJ = 150 °C
-5
10
10-6
TJ = 25 °C
10-7
0.010
10-8
10-9
0.000
0
6
12
18
24
30
0
11
VGS - Gate-Source Voltage (V)
22
33
44
VGS - Gate-to-Source Voltage (V)
Gate Source Voltage vs. Gate Current
Gate Source Voltage vs. Gate Current
2
50
VGS = 10 V thru 4 V
VGS = 3 V
1.5
ID - Drain Current (A)
ID - Drain Current (A)
40
30
20
TC = 25 °C
1
0.5
10
TC = 125 °C
0
0
0.5
1
1.5
TC = - 55 °C
0
2
0
0.6
VDS - Drain-to-Source Voltage (V)
Output Characteristics
1.8
2.4
3
Transfer Characteristics
0.0075
2100
1680
0.006
C - Capacitance (pF)
RDS(on) - On-Resistance (Ω)
1.2
VGS - Gate-to-Source Voltage (V)
VGS = 4.5 V
0.0045
VGS = 10 V
0.003
Ciss
1260
840
420
Coss
Crss
0
0.0015
0
10
20
30
40
ID - Drain Current (A)
50
0
6
12
On-Resistance vs. Drain Current
Document Number: 62867
S13-1945-Rev. B, 16-Sep-13
18
24
30
VDS - Drain-to-Source Voltage (V)
For technical questions, contact: [email protected]
Capacitance
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This document is subject to change without notice.
THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
SiS496EDNT
Vishay Siliconix
TYPICAL CHARACTERISTICS (25 °C, unless otherwise noted)
2
10
RDS(on) - On-Resistance (Normalized)
VGS - Gate-to-Source Voltage (V)
ID = 20 A
VDS = 8 V
ID = 20 A
8
VDS = 15 V
6
4
VDS = 24 V
2
1.65
VGS = 4.5 V
1.3
0.95
0
0
5
10
15
20
VGS = 10 V
0.6
25
- 50
- 25
0
Qg - Total Gate Charge (nC)
25
50
75
100
125
150
TJ - Junction Temperature (°C)
Gate Charge
On-Resistance vs. Junction Temperature
100
50
TJ = 150 °C
10
Power (W)
IS - Source Current (A)
40
TJ = 25 °C
30
20
1
10
0.1
0.0
0.3
0.6
0.9
0.1
1
10
100
600
VSD - Source-to-Drain Voltage (V)
Time (s)
Source-Drain Diode Forward Voltage
Single Pulse Power (Junction-to-Ambient)
0.012
2
ID = 20 A
RDS(on) - On-Resistance (Ω)
ID = 250 μA
1.75
VGS(th) (V)
0
0.01
1.2
1.5
1.25
1
- 50
- 25
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4
0
25
50
75
100
125
150
0.009
TJ = 125 °C
0.006
TJ = 25 °C
0.003
0.000
0
2
4
6
8
10
TJ - Temperature (°C)
VGS - Gate-to-Source Voltage (V)
Threshold Voltage
On-Resistance vs. Gate-to-Source Voltage
For technical questions, contact: [email protected]
Document Number: 62867
S13-1945-Rev. B, 16-Sep-13
This document is subject to change without notice.
THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
SiS496EDNT
Vishay Siliconix
TYPICAL CHARACTERISTICS (25 °C, unless otherwise noted)
1000
90
100
Limited by RDS(on)*
72
ID - Drain Current (A)
ID - Drain Current (A)
100 μs
10
1 ms
10 ms
1
100 ms
10s, 1 s
0.1
DC,
54
36
18
0.01
TA = 25 °C
Single Pulse
BVDSS Limited
0.001
0
0.1
1
10
100
VDS - Drain-to-Source Voltage (V)
* VGS > minimum VGS at which RDS(on) is specified
Safe Operating Area, Junction-to-Ambient
0
25
50
75
100
125
150
TC - Case Temperature (°C)
Current Derating*
64
Power (W)
48
32
16
0
0
25
50
75
100
125
150
TC - Case Temperature (°C)
Power Junction-to-Case
* The power dissipation PD is based on TJ(max.) = 150 °C, using junction-to-case thermal resistance, and is more useful in settling the upper
dissipation limit for cases where additional heatsinking is used. It is used to determine the current rating, when this rating falls below the package
limit.
Document Number: 62867
S13-1945-Rev. B, 16-Sep-13
For technical questions, contact: [email protected]
www.vishay.com
5
This document is subject to change without notice.
THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
SiS496EDNT
Vishay Siliconix
TYPICAL CHARACTERISTICS (25 °C, unless otherwise noted)
2
Normalized Effective Transient
Thermal Impedance
1
Duty Cycle = 0.5
0.2
Notes:
0.1
PDM
0.1
0.05
t1
t2
1. Duty Cycle, D =
0.02
t1
t2
2. Per Unit Base = R thJA = 81 °C/W
3. T JM - TA = PDMZthJA(t)
4. Surface Mounted
Single Pulse
0.01
10-4
10-3
10-2
10-1
1
10
100
600
Square Wave Pulse Duration (s)
Normalized Thermal Transient Impedance, Junction-to-Ambient
2
Normalized Effective Transient
Thermal Impedance
1
Duty Cycle = 0.5
0.2
0.1
0.1
Single Pulse
0.05
0.02
0.01
10-4
10-3
10-2
Square Wave Pulse Duration (s)
10-1
1
Normalized Thermal Transient Impedance, Junction-to-Case
Vishay Siliconix maintains worldwide manufacturing capability. Products may be manufactured at one of several qualified locations. Reliability data for Silicon
Technology and Package Reliability represent a composite of all qualified locations. For related documents such as package/tape drawings, part marking, and
reliability data, see www.vishay.com/ppg?62867.
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For technical questions, contact: [email protected]
Document Number: 62867
S13-1945-Rev. B, 16-Sep-13
This document is subject to change without notice.
THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
Package Information
www.vishay.com
Vishay Siliconix
PowerPAK® 1212-8T
MILLIMETERS
INCHES
DIM.
MIN.
NOM.
MAX.
MIN.
NOM.
A
0.70
0.75
0.80
0.028
0.030
MAX.
0.031
A1
0.00
-
0.05
0.000
-
0.002
b
0.23
0.30
0.41
0.009
0.012
0.016
c
0.23
0.28
0.33
0.009
0.011
0.013
D
3.20
3.30
3.40
0.126
0.130
0.134
D1
2.95
3.05
3.15
0.116
0.120
0.124
D2
1.98
2.11
2.24
0.078
0.083
0.088
D3
0.48
-
0.89
0.019
-
0.035
D4
0.47 TYP.
0.0185 TYP.
D5
2.3 TYP.
0.090 TYP.
E
3.20
3.30
3.40
0.126
0.130
0.134
E1
2.95
3.05
3.15
0.116
0.120
0.124
E2
1.47
1.60
1.73
0.058
0.063
0.068
E3
1.75
1.85
1.98
0.069
0.073
0.078
0.34 TYP.
E4
0.013 TYP.
e
0.65 BSC
0.026 BSC
K
0.86 TYP.
0.034 TYP.
K1
0.35
-
-
0.014
-
-
H
0.30
0.41
0.51
0.012
0.016
0.020
L
0.30
0.43
0.56
0.012
0.017
0.022
L1
0.06
0.13
0.20
0.002
0.005
0.008

0°
-
12°
0°
-
12°
W
0.15
0.25
0.36
0.006
0.010
0.014
M
0.125 TYP.
0.005 TYP.
ECN: T13-0056-Rev. A, 18-Feb-13
DWG: 6012
Revison: 18-Feb-13
1
Document Number: 62836
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
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Material Category Policy
Vishay Intertechnology, Inc. hereby certifies that all its products that are identified as RoHS-Compliant fulfill the
definitions and restrictions defined under Directive 2011/65/EU of The European Parliament and of the Council
of June 8, 2011 on the restriction of the use of certain hazardous substances in electrical and electronic equipment
(EEE) - recast, unless otherwise specified as non-compliant.
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requirements as per JEDEC JS709A standards. Please note that some Vishay documentation may still make reference
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Revision: 02-Oct-12
1
Document Number: 91000