Si5476DU New Product Vishay Siliconix N-Channel 60-V (D-S) MOSFET FEATURES PRODUCT SUMMARY rDS(on) (W) ID (A)a 0.034 at VGS = 10 V 12 0.041 at VGS = 4.5 V 12 VDS (V) 60 Qg (Typ) 10 5 nC 10.5 PowerPAKr ChipFETr Single D TrenchFETr Power MOSFET D New Thermally Enhanced PowerPAKr ChipFETr Package – Small Footprint Area – Low On-Resistance – Thin 0.8-mm Profile RoHS COMPLIANT APPLICATIONS D Load Switch for Portable Applications D DC–DC Switch for low power Synchronous Rectification D Intermediate Switch Driver for D DC/DC Applications 1 2 D 3 D D 4 D D 8 G D 7 Marking Code S 6 AA S XXX Lot Traceability and Date Code 5 G Part # Code Bottom View S N-Channel MOSFET Ordering Information: Si5476DU–T1–E3 (Lead (Pb)–free) ABSOLUTE MAXIMUM RATINGS (TA = 25 _C UNLESS OTHERWISE NOTED) Parameter Symbol Limit Drain-Source Voltage VDS 60 Gate-Source Voltage VGS " 20 TC = 25 _C Continuous Drain Current (TJ = 150 _C) TC = 70 _C TA = 25 _C 12a ID 7b, c 5.6b, c IDM Continuous Source-Drain Source Drain Diode Current TC = 25 _C TA = 25 _C Avalanche Current L=0 0.1 1 mH Single Pulse Avalanche Energy TC = 70 _C TA = 25 _C 12a IS 2.6b, c IAS 15 EAS 11.2 mJ 31 20 PD W 3.1b, c TA = 70 _C Operating Junction and Storage Temperature Range A 25 TC = 25 _C Maximum Power Dissipation V 12a TA = 70 _C Pulsed Drain Current Unit 2b, c TJ, Tstg – 55 to 150 Soldering Recommendations (Peak Temperature)d, e _C 260 THERMAL RESISTANCE RATINGS Parameter Maximum Junction-to-Ambientb, f Maximum Junction-to-Case (Drain) Symbol Typical Maximum t p 5 sec RthJA 34 40 Steady State RthJC 3 4 Unit _C/W Notes: a. Package limited. b. Surface Mounted on 1” x 1” FR4 Board. c. t = 5 sec. d. See Solder Profile (http://www.vishay.com/doc?73257). The PowerPAK ChipFET is a leadless package. The end of the lead terminal is exposed copper (not plated) as a result of the singulation process in manufacturing. A solder fillet at the exposed copper tip cannot be guaranteed and is not required to ensure adequate bottom side solder interconnection. e. Rework Conditions: manual soldering with a soldering iron is not recommended for leadless components. f. Maximum under steady state conditions is 90 _C/W. Document Number: 73663 S–60219—Rev. A, 20-Feb-06 www.vishay.com 1 Si5476DU New Product Vishay Siliconix SPECIFICATIONS (TJ = 25 _C UNLESS OTHERWISE NOTED) Parameter Symbol Test Condition Min VDS VGS = 0 V, ID = 1 mA 60 Typ Max Unit Static Drain-Source Breakdown Voltage DVDS/TJ VDS Temperature Coefficient V 55 ID = 250 mA mV/_C VGS(th) Temperature Coefficient DVGS(th)/TJ Gate-Source Threshold Voltage VGS(th) VDS = VGS, ID = 250 mA Gate-Source Leakage IGSS VDS = 0 V, VGS = " 20 V IDSS VDS = 60 V, VGS = 0 V 1 Zero Gate Voltage Drain Current VDS = 60 V, VGS = 0 V, TJ = 55 _C 10 On-State Drain Currenta ID(on) VDS w 5 V, VGS = 10 V Drain Source On State Resistancea Drain-Source On-State rDS(on) DS( ) Forward Transconductancea gfs – 6.3 1 3 V "100 ns 25 mA A VGS = 10 V, ID = 4.6 A 0.028 0.034 VGS = 4.5 V, ID = 4.2 A 0.033 0.041 VDS = 15 V, ID = 4.6 A 20 W S Dynamicb Input Capacitance Ciss Output Capacitance Coss Reverse Transfer Capacitance Crss Total Gate Charge Qg Gate-Source Charge Qgs Gate-Drain Charge Qgd Gate Resistance Rg Turn-On Delay Time Rise Time Turn-Off Delay Time Fall Time Turn-On Delay Time Rise Time Turn-Off Delay Time Fall Time 1100 VDS = 30 V, VGS = 0 V, f = 1 MHz 90 pF p 55 VDS = 30 V, VGS = 10 V, ID = 4.6 A VDS = 30 V, VGS = 4.5 V, ID= 4.6 A 21 32 10.5 16 nC 3.5 4.2 f = 1 MHz td(on) W 3.3 20 30 150 225 20 30 tf 60 90 td(on) 10 15 15 25 25 40 10 15 tr td(off) tr td(off) VDD = 30 V, RL = 5.4 W ID ^ 5.6 A, VGEN = 4.5 V, Rg = 1 W VDD = 30 V, RL = 5.4 W ID ^ 5.6 A, VGEN = 10 V, Rg = 1 W tf ns Drain-Source Body Diode Characteristics Continuous Source-Drain Diode Current IS Pulse Diode Forward Current ISM Body Diode Voltage VSD Body Diode Reverse Recovery Time trr Body Diode Reverse Recovery Charge Qrr Reverse Recovery Fall Time ta Reverse Recovery Rise Time tb TC = 25 _C 12 25 IS = 5.5 A, VGS = 0 V 5A IF = 5 5.5 A, di/dt = 100 A/ms A/ms, TJ = 25 _C A 0.85 1.2 V 25 50 ns 25 50 nC 19 6 ns Notes a. Pulse test; pulse width v 300 ms, duty cycle v 2 %. b. Guaranteed by design, not subject to production testing. Stresses beyond those listed under “Absolute Maximum Ratings” may cause permanent damage to the device. These are stress ratings only, and functional operation of the device at these or any other conditions beyond those indicated in the operational sections of the specifications is not implied. Exposure to absolute maximum rating conditions for extended periods may affect device reliability. www.vishay.com 2 Document Number: 73663 S–60219—Rev. A, 20-Feb-06 Si5476DU New Product Vishay Siliconix TYPICAL CHARACTERISTICS (25 _C UNLESS NOTED) Output Characteristics Transfer Characteristics 5 VGS = 10 thru 4 V 20 I D – Drain Current (A) I D – Drain Current (A) 25 15 10 VGS = 3 V 5 0 0.0 0.2 0.4 0.6 0.8 1.0 1.2 1.4 1.6 TC = – 55 _C 4 3 TC = 125 _C 2 TC = 25 _C 1 1.8 0 0.0 2.0 0.5 VDS – Drain-to-Source Voltage (V) 1.0 2.0 2.5 3.0 3.5 VGS – Gate-to-Source Voltage (V) Capacitance On-Resistance vs. Drain Current and Gate Voltage 1500 0.040 1200 0.036 C – Capacitance (pF) rDS(on) – On-Resistance (mW) 1.5 VGS = 4.5 V 0.032 VGS = 10 V 0.028 Ciss 900 600 300 Coss 0.024 Crss 0 0 5 10 15 20 0 25 10 ID – Drain Current (A) 30 40 50 60 VDS – Drain-to-Source Voltage (V) On-Resistance vs. Junction Temperature Gate Charge 2.0 10 ID = 4.6 A 1.8 8 rDS(on) – On-Resistance (Normalized) V GS – Gate-to-Source Voltage (V) 20 6 VDS = 30 V VDS = 48 V 4 VGS = 10 V ID = 4.6 A 1.6 1.4 1.2 1.0 2 0.8 0 0 5 10 15 Qg – Total Gate Charge (nC) Document Number: 73663 S–60219—Rev. A, 20-Feb-06 20 25 0.6 –50 –25 0 25 50 75 100 125 150 TJ – Junction Temperature (_C) www.vishay.com 3 Si5476DU New Product Vishay Siliconix TYPICAL CHARACTERISTICS (25 _C UNLESS NOTED) Source-Drain Diode Forward Voltage On-Resistance vs. Gate-to-Source Voltage 0.08 rDS(on) – Drain-to-Source On-Resistance (W) 30 I S – Source Current (A) TJ = 150 _C 10 TJ = 25 _C 1 0.0 ID = 4.6 A 0.07 0.06 TA = 125 _C 0.05 0.04 0.03 TA = 25 _C 0.02 0.2 0.4 0.6 0.8 1.0 0 1.2 2 VSD – Source-to-Drain Voltage (V) 4 6 8 10 VGS – Gate-to-Source Voltage (V) Threshold Voltage Single Pulse Power, Junction-to-Ambient 2.6 50 2.4 2.0 Power (W) VGS(th) (V) 40 ID = 250 mA 2.2 1.8 1.6 30 20 1.4 10 1.2 1.0 –50 –25 0 25 50 75 100 125 0 0.001 150 0.01 0.1 TJ – Temperature (_C) 10 1 100 1000 Time (sec) Safe Operating Area, Junction-to-Ambient 100 BVDSS Limited *Limited by rDS(on) 100 ms I D – Drain Current (A) 10 1 ms 1 10 ms 100 ms 0.1 TA = 25 _C Single Pulse 1s 10 s dc 0.01 0.1 1 10 100 VDS – Drain-to-Source Voltage (V) *VGS u minimum VGS at which rDS(on) is specified www.vishay.com 4 Document Number: 73663 S–60219—Rev. A, 20-Feb-06 Si5476DU New Product Vishay Siliconix TYPICAL CHARACTERISTICS (25 _C UNLESS NOTED) Current De-Rating* Power De-Rating 24 35 30 Power Dissipation (W) ID – Drain Current (A) 20 16 Package Limited 12 8 4 25 20 15 10 5 0 0 0 25 50 75 100 TC – Case Temperature (_C) 125 150 25 50 75 100 125 150 TC – Case Temperature (_C) *The power dissipation PD is based on TJ(max) = 150 _C, using junction-to-case thermal resistance, and is more useful in settling the upper dissipation limit for cases where additional heatsinking is used. It is used to determine the current rating, when this rating falls below the package limit. Document Number: 73663 S–60219—Rev. A, 20-Feb-06 www.vishay.com 5 Si5476DU New Product Vishay Siliconix TYPICAL CHARACTERISTICS (25 _C UNLESS NOTED) Normalized Thermal Transient Impedance, Junction-to-Ambient 1 Normalized Effective Transient Thermal Impedance Duty Cycle = 0.5 0.2 Notes: 0.1 0.1 PDM 0.05 t1 t2 1. Duty Cycle, D = t1 t2 2. Per Unit Base = RthJA = 75 _C/W 0.02 3. TJM – TA = PDMZthJA(t) Single Pulse 4. Surface Mounted 0.01 10–4 10–3 10–2 10–1 1 Square Wave Pulse Duration (sec) 10 100 1000 Normalized Thermal Transient Impedance, Junction-to-Case 1 Normalized Effective Transient Thermal Impedance Duty Cycle = 0.5 0.2 0.1 0.05 0.02 Single Pulse 0.1 10–4 10–3 10–2 Square Wave Pulse Duration (sec) 10–1 1 Vishay Siliconix maintains worldwide manufacturing capability. Products may be manufactured at one of several qualified locations. Reliability data for Silicon Technology and Package Reliability represent a composite of all qualified locations. For related documents such as package/tape drawings, part marking, and reliability data, see http://www.vishay.com/ppg?73663. www.vishay.com 6 Document Number: 73663 S–60219—Rev. A, 20-Feb-06 Legal Disclaimer Notice Vishay Notice Specifications of the products displayed herein are subject to change without notice. Vishay Intertechnology, Inc., or anyone on its behalf, assumes no responsibility or liability for any errors or inaccuracies. Information contained herein is intended to provide a product description only. No license, express or implied, by estoppel or otherwise, to any intellectual property rights is granted by this document. Except as provided in Vishay's terms and conditions of sale for such products, Vishay assumes no liability whatsoever, and disclaims any express or implied warranty, relating to sale and/or use of Vishay products including liability or warranties relating to fitness for a particular purpose, merchantability, or infringement of any patent, copyright, or other intellectual property right. The products shown herein are not designed for use in medical, life-saving, or life-sustaining applications. Customers using or selling these products for use in such applications do so at their own risk and agree to fully indemnify Vishay for any damages resulting from such improper use or sale. Document Number: 91000 Revision: 08-Apr-05 www.vishay.com 1