SUP85N03-3m6P Vishay Siliconix N-Channel 30-V (D-S) MOSFET FEATURES PRODUCT SUMMARY VDS (V) 30 RDS(on) (Ω) ID (A) 0.0036 at VGS = 10 V 85d 0.0044 at VGS = 4.5 V 85d • Halogen-free According to IEC 61249-2-21 Definition • TrenchFET® Power MOSFET • 100 % Rg and UIS Tested • Compliant to RoHS Directive 2002/95/EC Qg (Typ.) 67 APPLICATIONS • Power Supply - Secondary Synchronous Rectification • DC/DC Converter TO-220AB D G G D S S Top View Ordering Information: SUP85N03-3m6P-GE3 (Lead (Pb)-free and Halogen-free) N-Channel MOSFET ABSOLUTE MAXIMUM RATINGS TC = 25 °C, unless otherwise noted Parameter Symbol Limit Drain-Source Voltage VDS 30 Gate-Source Voltage VGS ± 20 Continuous Drain Current (TJ = 150 °C) TC = 25 °C TC = 70 °C ID IDM Pulsed Drain Current Avalanche Current a L = 0.1 mH Single Avalanche Energy TC = 25 °C Maximum Power Dissipationa TA = 25 Operating Junction and Storage Temperature Range °Cc V 85d 85d 120 IAS 45 EAS 101 PD Unit 78.1 A mJ b 3.1 W TJ, Tstg - 55 to 150 °C Symbol Limit Unit THERMAL RESISTANCE RATINGS Parameter Junction-to-Ambient (PCB Mount) c Junction-to-Case (Drain) RthJA 40 RthJC 1.6 °C/W Notes: a. Duty cycle ≤ 1 %. b. See SOA curve for voltage derating. c. When Mounted on 1" square PCB (FR-4 material). d. Package limited. Document Number: 65536 S09-2271-Rev. A, 02-Nov-09 www.vishay.com 1 SUP85N03-3m6P Vishay Siliconix SPECIFICATIONS TJ = 25 °C, unless otherwise noted Parameter Symbol Test Conditions Min. VDS VDS = 0 V, ID = 250 µA 30 VGS(th) VDS = VGS, ID = 250 µA 1 IGSS VDS = 0 V, VGS = ± 20 V Typ. Max. Unit Static Drain-Source Breakdown Voltage Gate Threshold Voltage Gate-Body Leakage Zero Gate Voltage Drain Current On-State Drain Currenta Drain-Source On-State Resistancea Forward Transconductancea IDSS 2.5 ± 250 VDS = 30 V, VGS = 0 V 1 VDS = 30 V, VGS = 0 V, TJ = 125 °C 50 VDS = 30 V, VGS = 0 V, TJ = 150 °C 250 ID(on) RDS(on) gfs VDS ≥ 10 V, VGS = 10 V 50 V nA µA A VGS = 10 V, ID = 22 A 0.0030 0.0036 VGS = 4.5 V, ID = 20 A 0.0036 0.0044 VDS = 15 V, ID = 20 A 110 Ω S Dynamicb Input Capacitance Ciss Output Capacitance Coss Reverse Transfer Capacitance Crss Total Gate Chargec Qg Gate-Source Chargec Qgs c Rg Gate Resistance Turn-On Delay Timec Rise Timec 400 67 VDS = 15 V, VGS = 10 V, ID = 20 A Fall Timec td(off) 100 nC 10.5 12.2 f = 1 MHz td(on) tr c pF 680 Qgd Gate-Drain Charge Turn-Off Delay Time 3535 VGS = 0 V, VDS = 15 V, f = 1 MHz VDD = 15 V, RL = 1.5 Ω ID ≅ 10 A, VGEN = 10 V, Rg = 1 Ω tf Drain-Source Body Diode Ratings and Characteristics TC = 25 °C 0.3 1.4 2.8 11 20 10 20 35 53 10 20 85 Pulsed Current ISM 120 Forward Voltagea VSD Reverse Recovery Time Peak Reverse Recovery Current Reverse Recovery Charge IF = 10 A, VGS = 0 V trr IRM(REC) Qrr ns b IS Continuous Current Ω IF = 10 A, dI/dt = 100 A/µs A 0.83 1.5 V 41 62 ns 2 3 A 40 60 nC Notes: a. Pulse test; pulse width ≤ 300 µs, duty cycle ≤ 2 %. b. Guaranteed by design, not subject to production testing. c. Independent of operating temperature. Stresses beyond those listed under “Absolute Maximum Ratings” may cause permanent damage to the device. These are stress ratings only, and functional operation of the device at these or any other conditions beyond those indicated in the operational sections of the specifications is not implied. Exposure to absolute maximum rating conditions for extended periods may affect device reliability. www.vishay.com 2 Document Number: 65536 S09-2271-Rev. A, 02-Nov-09 SUP85N03-3m6P Vishay Siliconix TYPICAL CHARACTERISTICS 25 °C, unless otherwise noted 120 0.0045 I D - Drain Current (A) R DS(on) - On-Resistance (Ω) VGS = 10 V thru 4 V 100 VGS = 3 V 80 60 40 0.0040 VGS = 4.5 V 0.0035 VGS = 10 V 0.0030 20 0 0.0 0.0025 0.5 1.0 1.5 2.0 0 20 40 VDS - Drain-to-Source Voltage (V) 80 100 ID - Drain Current (A) Output Characteristics On-Resistance vs. Drain Current 5 0.020 4 0.016 R DS(on) - On-Resistance (Ω) I D - Drain Current (A) 60 3 2 TC = 25 °C 1 0.012 0.008 TJ = 150 °C 0.004 TC = 125 °C 0 0.0 TJ = 25 °C TC = - 55 °C 0.6 1.2 1.8 2.4 0.000 3.0 0 2 4 6 8 VGS - Gate-to-Source Voltage (V) VGS - Gate-to-Source Voltage (V) Transfer Characteristics On-Resistance vs. Gate-to-Source Voltage 10 10 300 VGS - Gate-to-Source Voltage (V) g fs - Transconductance (S) ID = 20 A TC = - 55 °C 240 180 TC = 25 °C 120 TC = 125 °C 60 8 VDS = 15 V 6 VDS = 8 V VDS = 24 V 4 2 0 0 0 12 Document Number: 65536 S09-2271-Rev. A, 02-Nov-09 24 36 48 60 0 20 40 60 I D - Drain Current (A) Qg - Total Gate Charge (nC) Transconductance Gate Charge 80 www.vishay.com 3 SUP85N03-3m6P Vishay Siliconix TYPICAL CHARACTERISTICS 25 °C, unless otherwise noted 2.1 100 I S - Source Current (A) 1.8 ID = 250 µA TJ = 150 °C VGS(th) (V) 10 TJ = 25 °C 1.5 1.2 1 0.9 0.1 0.0 0.2 0.4 0.6 0.8 1.0 0.6 - 50 1.2 0 25 50 75 TJ - Temperature (°C) Source-Drain Diode Forward Voltage Threshold Voltage 5000 100 125 150 100 125 150 VDS - Drain-to-Source Voltage (V) 41 Ciss 4000 C - Capacitance (pF) - 25 VSD - Source-to-Drain Voltage (V) 3000 2000 Coss 1000 39 ID = 250 µA 37 35 Crss 0 0 5 10 15 20 25 33 - 50 30 - 25 0 25 50 75 VDS - Drain-to-Source Voltage (V) TJ - Junction Temperature (°C) Capacitance Drain Source Breakdown vs. Junction Temperature 1.8 160 1.5 120 I D - Drain Current (A) (Normalized) R DS(on) - On-Resistance ID = 20 A 1.2 0.9 VGS = 10 V 0.6 - 50 www.vishay.com 4 80 40 VGS = 4.5 V - 25 Package Limited 0 25 0 50 75 100 125 150 0 25 50 75 100 TJ - Junction Temperature (°C) TC - Case Temperature (°C) On-Resistance vs. Junction Temperature Current Derating 125 150 Document Number: 65536 S09-2271-Rev. A, 02-Nov-09 SUP85N03-3m6P Vishay Siliconix TYPICAL CHARACTERISTICS 25 °C, unless otherwise noted 1000 100 Limited by RDS(on)* TJ = 25 °C TJ = 150 °C 10 I D - Drain Current (A) I DAV (A) 100 100 µA 10 1 ms 10 ms, 100 ms 1 s, 10 s, DC 1 TC = 25 °C Single Pulse 0.1 1 10-5 10-4 10-3 10-2 10-1 Time (s) Single Pulse Avalanche Current Capability vs. Time 0.01 0.1 BVDSS Limited 1 10 100 VDS - Drain-to-Source Voltage (V) * VGS > minimum VGS at which RDS(on) is specified Safe Operating Area Normalized Effective Transient Thermal Impedance 1 Duty Cycle = 0.5 0.2 0.1 0.05 0.02 Single Pulse 0.1 10 -4 10 -3 10 -2 10 -1 1 10 Square Wave Pulse Duration (s) Normalized Thermal Transient Impedance, Junction-to-Case Vishay Siliconix maintains worldwide manufacturing capability. Products may be manufactured at one of several qualified locations. Reliability data for Silicon Technology and Package Reliability represent a composite of all qualified locations. For related documents such as package/tape drawings, part marking, and reliability data, see www.vishay.com/ppg?65536. Document Number: 65536 S09-2271-Rev. A, 02-Nov-09 www.vishay.com 5 Legal Disclaimer Notice Vishay Disclaimer All product specifications and data are subject to change without notice. Vishay Intertechnology, Inc., its affiliates, agents, and employees, and all persons acting on its or their behalf (collectively, “Vishay”), disclaim any and all liability for any errors, inaccuracies or incompleteness contained herein or in any other disclosure relating to any product. Vishay disclaims any and all liability arising out of the use or application of any product described herein or of any information provided herein to the maximum extent permitted by law. The product specifications do not expand or otherwise modify Vishay’s terms and conditions of purchase, including but not limited to the warranty expressed therein, which apply to these products. No license, express or implied, by estoppel or otherwise, to any intellectual property rights is granted by this document or by any conduct of Vishay. The products shown herein are not designed for use in medical, life-saving, or life-sustaining applications unless otherwise expressly indicated. Customers using or selling Vishay products not expressly indicated for use in such applications do so entirely at their own risk and agree to fully indemnify Vishay for any damages arising or resulting from such use or sale. Please contact authorized Vishay personnel to obtain written terms and conditions regarding products designed for such applications. Product names and markings noted herein may be trademarks of their respective owners. Document Number: 91000 Revision: 18-Jul-08 www.vishay.com 1