VISHAY SUM45N25-58-E3

New Product
SUM45N25-58
Vishay Siliconix
N-Channel 250-V (D-S) 175 °C MOSFET
FEATURES
PRODUCT SUMMARY
V(BR)DSS (V)
250
rDS(on) (Ω)
ID (A)
0.058 at VGS = 10 V
45
0.062 at VGS = 6 V
43
• TrenchFET® Power MOSFETS
• 175 °C Junction Temperature
• New Low Thermal Resistance Package
RoHS
COMPLIANT
APPLICATIONS
• Primary Side Switch
• Plasma Display Panel Sustainer Function
D
TO-263
G
G
D S
Top View
Ordering Information: SUM45N25-58-E3 (Lead (Pb)-free)
S
N-Channel MOSFET
ABSOLUTE MAXIMUM RATINGS TC = 25 °C, unless otherwise noted
Parameter
Drain-Source Voltage
Typical Avalanche Voltaged
Gate-Source Voltage
Continuous Drain Current (TJ = 175 °C)
TC = 25 °C
TC = 125 °C
Pulsed Drain Current
Avalanche Current
a
Repetitive Avalanche Energy
Maximum Power Dissipationa
Operating Junction and Storage Temperature Range
L = 0.1 mH
TC = 25 °C
TA = 25 °Cc
Symbol
Limit
VDS
250
VDS (Avalanche)Typ
300
VGS
± 30
Unit
V
45
ID
25
IDM
90
IAR
35
EAR
61
375b
PD
3.75
TJ, Tstg
A
mJ
W
- 55 to 175
°C
Unit
THERMAL RESISTANCE RATINGS
Parameter
Symbol
Limit
Junction-to-Ambient (PCB Mount)c
RthJA
40
Junction-to-Case (Drain)
RthJC
0.4
°C/W
Notes:
a. Duty cycle ≤ 1 %.
b. See SOA curve for voltage derating.
c. When Mounted on 1" square PCB (FR-4 material).
d. Guaranteed by design
Document Number: 72314
S-70311-Rev. C, 12-Feb-07
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New Product
SUM45N25-58
Vishay Siliconix
SPECIFICATIONS TJ = 25 °C, unless otherwise noted
Parameter
Symbol
Test Conditions
Min
V(BR)DSS
VDS = 0 V, ID = 250 µA
250
VGS(th)
VDS = VGS, ID = 250 µA
2
IGSS
VDS = 0 V, VGS = ± 30 V
Typ
Max
Unit
Static
Drain-Source Breakdown Voltage
Gate-Threshold Voltage
Gate-Body Leakage
Zero Gate Voltage Drain Current
On-State Drain Currenta
IDSS
1
VDS = 250 V, VGS = 0 V, TJ = 125 °C
50
VDS = 250 V, VGS = 0 V, TJ = 175 °C
250
VDS ≥ 5 V, VGS = 10 V
VGS = 10 V, ID = 20 A
a
Forward Transconductance
± 250
VDS = 250 V, VGS = 0 V
ID(on)
Drain-Source On-State Resistancea
4
rDS(on)
gfs
70
V
nA
µA
A
0.047
0.058
VGS = 10 V, ID = 20 A, TJ = 125 °C
0.121
VGS = 10 V, ID = 20 A, TJ = 175 °C
0.163
VGS = 6 V, ID = 15 A
0.049
VDS = 15 V, ID = 20 A
70
Ω
0.062
S
Dynamicb
Input Capacitance
Ciss
Output Capacitance
Coss
Reverse Transfer Capacitance
Crss
Total Gate Chargec
Qg
c
Gate-Source Charge
Qgs
Gate-Drain Chargec
Qgd
c
Rise Timec
Turn-Off Delay Timec
Fall Timec
pF
300
170
95
VDS = 125 V, VGS = 10 V, ID = 45 A
td(off)
nC
28
Ω
f = 1 MHz
1.6
22
35
VDD = 100 V, RL = 2.78 Ω
ID ≅ 45 A, VGEN = 10 V, Rg = 2.5 Ω
220
330
40
60
145
220
td(on)
tr
140
34
Rg
Gate Resistance
Turn-On Delay Time
5000
VGS = 0 V, VDS = 25 V, f = 1 MHz
tf
ns
Source-Drain Diode Ratings and Characteristics (TC = 25 °C)b
IS
45
Pulsed Current
ISM
70
Forward Voltagea
VSD
Continuous Current
Reverse Recovery Time
Peak Reverse Recovery Current
Reverse Recovery Charge
IF = 45 A, VGS = 0 V
trr
IRM(REC)
Qrr
IF = 45 A, di/dt = 100 A/µs
A
1.0
1.5
V
150
225
ns
12
18
A
0.9
2
µC
Notes:
a. Pulse test; pulse width ≤ 300 µs, duty cycle ≤ 2 %
b. Guaranteed by design, not subject to production testing.
c. Independent of operating temperature.
Stresses beyond those listed under “Absolute Maximum Ratings” may cause permanent damage to the device. These are stress ratings only, and functional operation
of the device at these or any other conditions beyond those indicated in the operational sections of the specifications is not implied. Exposure to absolute maximum
rating conditions for extended periods may affect device reliability.
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Document Number: 72314
S-70311-Rev. C, 12-Feb-07
New Product
SUM45N25-58
Vishay Siliconix
TYPICAL CHARACTERISTICS 25 °C, unless otherwise noted
100
100
VGS = 10 thru 7 V
6V
80
I D - Drain Current (A)
I D - Drain Current (A)
80
60
40
20
5V
60
40
TC = 125 °C
20
25 °C
4V
- 55 °C
0
0
0
2
4
6
8
10
0
1
VDS - Drain-to-Source Voltage (V)
2
3
4
5
6
VGS - Gate-to-Source Voltage (V)
Output Characteristics
Transfer Characteristics
150
0.10
g fs - Transconductance (S)
120
25 °C
90
125 °C
60
30
r DS(on) - On-Resistance (Ω)
TC = - 55 °C
0.06
VGS = 6 V
VGS = 10 V
0.04
0.02
0.00
0
0
10
20
30
40
50
0
60
20
40
60
80
ID - Drain Current (A)
ID - Drain Current (A)
Transconductance
On-Resistance vs. Drain Current
100
20
7000
V GS - Gate-to-Source Voltage (V)
6000
Ciss
C - Capacitance (pF)
0.08
5000
4000
3000
2000
Crss
1000
Coss
VDS = 125 V
ID = 45 A
16
12
8
4
0
0
0
40
80
120
160
200
0
30
60
90
120
150
VDS - Drain-to-Source Voltage (V)
Qg - Total Gate Charge (nC)
Capacitance
Gate Charge
Document Number: 72314
S-70311-Rev. C, 12-Feb-07
180
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New Product
SUM45N25-58
Vishay Siliconix
TYPICAL CHARACTERISTICS 25 °C, unless otherwise noted
2.8
100
VGS = 10 V
ID = 20 A
I S - Source Current (A)
r DS(on) - On-Resistance
(Normalized)
2.4
2.0
1.6
1.2
TJ = 150 °C
TJ = 25 °C
10
0.8
0.4
- 50
- 25
0
25
50
75
100
125
150
1
0
175
0.3
TJ - Junction Temperature (°C)
0.6
0.9
1.2
VSD - Source-to-Drain Voltage (V)
On-Resistance vs. Junction Temperature
Source-Drain Diode Forward Voltage
100
300
290
V (BR)DSS (V)
ID = 1.0 mA
I Dav (a)
10
IAV (A) at TA = 25 °C
280
270
260
1
250
240
IAV (A) at TA = 150 °C
0.1
0.00001
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0.0001
0.001
0.01
0.1
1
230
- 50
- 25
0
25
50
75
100
125
tin (Sec)
TJ - Junction Temperature (°C)
Avalanche Current vs. Time
Drain Source Breakdown
vs. Junction Temperature
150
175
Document Number: 72314
S-70311-Rev. C, 12-Feb-07
New Product
SUM45N25-58
Vishay Siliconix
THERMAL RATINGS
100
50
10 µs
Limited
by rDS(on)
I D - Drain Current (A)
I D - Drain Current (A)
40
30
20
100 µs
10
1 ms
10 ms
1
100 ms
dc
TC = 25 °C
Single Pulse
10
0
0.1
0
25
50
75
100
125
150
175
0.1
TC - Ambient Temperature (°C)
1
10
100
1000
VDS - Drain-to-Source Voltage (V)
Safe Operating Area, Case Temperature
Maximum Avalanche and Drain Current
vs. Case Temperature
2
Normalized Effective Transient
Thermal Impedance
1
Duty Cycle = 0.5
0.2
0.1
0.1
0.05
0.02
Single Pulse
0.01
10-4
10-3
10-2
10-1
1
Square Wave Pulse Duration (sec)
Normalized Thermal Transient Impedance, Junction-to-Case
Vishay Siliconix maintains worldwide manufacturing capability. Products may be manufactured at one of several qualified locations. Reliability data for Silicon Technology and Package Reliability represent a composite of all qualified locations. For related documents such as package/tape drawings, part marking, and reliability
data, see http://www.vishay.com/ppg?72314.
Document Number: 72314
S-70311-Rev. C, 12-Feb-07
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Legal Disclaimer Notice
Vishay
Disclaimer
All product specifications and data are subject to change without notice.
Vishay Intertechnology, Inc., its affiliates, agents, and employees, and all persons acting on its or their behalf
(collectively, “Vishay”), disclaim any and all liability for any errors, inaccuracies or incompleteness contained herein
or in any other disclosure relating to any product.
Vishay disclaims any and all liability arising out of the use or application of any product described herein or of any
information provided herein to the maximum extent permitted by law. The product specifications do not expand or
otherwise modify Vishay’s terms and conditions of purchase, including but not limited to the warranty expressed
therein, which apply to these products.
No license, express or implied, by estoppel or otherwise, to any intellectual property rights is granted by this
document or by any conduct of Vishay.
The products shown herein are not designed for use in medical, life-saving, or life-sustaining applications unless
otherwise expressly indicated. Customers using or selling Vishay products not expressly indicated for use in such
applications do so entirely at their own risk and agree to fully indemnify Vishay for any damages arising or resulting
from such use or sale. Please contact authorized Vishay personnel to obtain written terms and conditions regarding
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Product names and markings noted herein may be trademarks of their respective owners.
Document Number: 91000
Revision: 18-Jul-08
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