SUP90P06-09L New Product Vishay Siliconix P-Channel 60-V (D-S) 175_C MOSFET FEATURES PRODUCT SUMMARY −60 D TrenchFETr Power MOSFET rDS(on) (W) ID (A)c 0.0093 @ VGS = −10 V −90 0.0118 @ VGS = −4.5 V −90 VDS (V) APPLICATIONS D DC/DC Primary Switch D Automotive − 12-V Boardnet − High-Side Switches − Motor Drives TO-220AB S G DRAIN connected to TAB G D S Top View D Ordering Information: SUP90P06-09L—E3 P-Channel MOSFET ABSOLUTE MAXIMUM RATINGS (TC = 25_C UNLESS OTHERWISE NOTED) Parameter Symbol Limit Drain-Source Voltage VDS −60 Gate-Source Voltage VGS "20 TC = 25_C Continuous Drain Currentc (TJ = 175_C) TC = 125_C Pulsed Drain Current Avalanche Current L = 0.1 0 1 mH Single Pulse Avalanche Energya TC = 25_C Power Dissipation TA = 25_C Operating Junction and Storage Temperature Range ID V −90 −67 IDM −200 IAS −65 EAS 211 PD Unit 250b 2.4 A mJ W TJ, Tstg −55 to 175 _C Symbol Limit Unit Junction-to-Ambient Free Air RthJA 62 Junction-to-Case RthJC 0.6 THERMAL RESISTANCE RATINGS Parameter _C/W Notes: a. Duty cycle v 1%. b. See SOA curve for voltage derating. c. Limited by package. Document Number: 73010 S-41203—Rev. A, 21-Jun-04 www.vishay.com 1 SUP90P06-09L New Product Vishay Siliconix SPECIFICATIONS (TJ = 25_C UNLESS OTHERWISE NOTED) Parameter Symbol Test Condition Min Typ Max V(BR)DSS VGS = 0 V, ID = −250 mA −60 VGS(th) VDS = VGS, ID = −250 mA −1 IGSS VDS = 0 V, VGS = "20 V "100 VDS = −60 V, VGS = 0 V −1 VDS = −60 V, VGS = 0 V, TJ = 125_C −50 VDS = −60 V, VGS = 0 V, TJ = 175_C −250 Unit Static Drain-Source Breakdown Voltage Gate Threshold Voltage Gate-Body Leakage Zero Gate Voltage g Drain Current On-State Drain Currenta IDSS ID(on) VDS = −5 V, VGS = −10 V −120 VGS = −10 V, ID = −30 A Drain Source On-State Drain-Source On State Resistancea rDS(on) DS( ) gfs 0.0074 nA mA m 0.0093 0.0150 VGS = −10 V, ID = −30 A, TJ = 175_C 0.0190 VDS = −15 V, ID = −30 A V A VGS = −10 V, ID = −30 A, TJ = 125_C VGS = −4.5 V, ID = −20 A Forward Transconductancea −3 0.0094 W 0.0118 20 S Dynamicb Input Capacitance Ciss Output Capacitance Coss Reversen Transfer Capacitance Crss 760 Total Gate Chargec Qg 160 Gate-Source Chargec Qgs Gate-Drain Chargec Qgd Gate Resistance Rg Turn-On Delay Timec Rise Timec Turn-Off Delay Timec Fall Timec 9200 VGS = 0 V, VDS = −25 V, f = 1 MHz VDS = −30 V,, VGS = −10 V,, ID = −90 A 975 pF 240 40 nC 36 f = 1.0 MHz 3 td(on) 20 30 tr VDD = −30 30 V, RL = 0.33 W 190 285 td(off) ID ] −90 A, VGEN = −10 V, Rg = 2.5 W 140 210 300 450 tf W ns Source-Drain Diode Ratings and Characteristics (TC = 25_C)b Continuous Current Is −90 Pulsed Current ISM −200 Forward Voltagea VSD Reverse Recovery Time Peak Reverse Recovery Current Reverse Recovery Charge IF = −50 A, VGS = 0 V trr IRM(REC) Qrr IF = −50 A,, di/dt = 100 A/ms m A −1.0 −1.5 V 60 90 ns −3 −4.5 A 0.09 0.2 mC Notes: a. Pulse test; pulse width v 300 ms, duty cycle v 2%. b. Guaranteed by design, not subject to production testing. c. Independent of operating temperature. www.vishay.com 2 Document Number: 73010 S-41203—Rev. A, 21-Jun-04 SUP90P06-09L New Product Vishay Siliconix TYPICAL CHARACTERISTICS (25_C UNLESS NOTED) Output Characteristics Transfer Characteristics 200 200 5V VGS = 10 thru 6 V 160 I D − Drain Current (A) I D − Drain Current (A) 160 120 4V 80 40 120 80 TC = 125_C 40 25_C 2V 3V −55_C 0 0 2 4 6 8 0 0.0 0.5 1.0 1.5 2.0 2.5 3.0 3.5 4.0 4.5 5.0 5.5 10 VDS − Drain-to-Source Voltage (V) VGS − Gate-to-Source Voltage (V) Transconductance On-Resistance vs. Drain Current 200 0.020 25_C 160 r DS(on) − On-Resistance ( W ) g fs − Transconductance (S) TC = −55_C 125_C 120 80 40 0 0.016 0.012 VGS = 4.5 V VGS = 10 V 0.008 0.004 0.000 0 10 20 30 40 50 60 70 80 0 20 40 ID − Drain Current (A) V GS − Gate-to-Source Voltage (V) C − Capacitance (pF) Ciss 9000 6000 3000 Coss Crss 0 100 120 Gate Charge 20 12000 0 80 ID − Drain Current (A) Capacitance 15000 60 VDS = 30 V ID = 90 A 16 12 8 4 0 10 20 30 40 50 VDS − Drain-to-Source Voltage (V) Document Number: 73010 S-41203—Rev. A, 21-Jun-04 60 0 40 80 120 160 200 240 280 320 Qg − Total Gate Charge (nC) www.vishay.com 3 SUP90P06-09L New Product Vishay Siliconix TYPICAL CHARACTERISTICS (25_C UNLESS NOTED) On-Resistance vs. Junction Temperature 2.0 VGS = 10 V ID = 30 A I S − Source Current (A) 1.7 rDS(on) − On-Resiistance (Normalized) Source-Drain Diode Forward Voltage 100 1.4 1.1 0.8 0.5 −50 −25 0 25 50 75 100 125 150 TJ = 150_C 1 175 0.0 0.3 TJ − Junction Temperature (_C) 0.6 0.9 1.2 VSD − Source-to-Drain Voltage (V) Drain Source Breakdown vs. Junction Temperature Avalanche Current vs. Time 1000 TJ = 25_C 10 76 72 ID = 10 mA V (BR)DSS (V) I Dav (a) 100 IAV (A) @ TA = 25_C 10 68 64 1 60 IAV (A) @ TA = 150_C 0.1 0.0001 0.001 0.01 tin (Sec) www.vishay.com 4 0.1 1 56 −50 −25 0 25 50 75 100 125 150 175 TJ − Junction Temperature (_C) Document Number: 73010 S-41203—Rev. A, 21-Jun-04 SUP90P06-09L New Product Vishay Siliconix THERMAL RATINGS Maximum Avalanche and Drain Current vs. Case Temperature Safe Operating Area 1000 200 Limited by rDS(on) 10 ms 100 I D − Drain Current (A) I D − Drain Current (A) 150 100 Limited by Package 50 0 100 ms 10 1 ms 10 ms 1 0.1 0 25 50 75 100 125 150 175 0.1 10 100 Normalized Thermal Transient Impedance, Junction-to-Case 2 1 1 VDS − Drain-to-Source Voltage (V) TC − Case Temperature (_C) Normalized Effective Transient Thermal Impedance 100 ms, dc TC = 25_C Single Pulse Duty Cycle = 0.5 0.2 Notes: PDM 0.1 0.1 0.05 t1 t2 1. Duty Cycle, D = 0.02 Single Pulse t1 t2 2. Per Unit Base = RthJA = 62.5_C/W 3. TJM − TA = PDMZthJA(t) 4. Surface Mounted 0.01 10−4 10−3 10−2 10−1 1 Square Wave Pulse Duration (sec) Document Number: 73010 S-41203—Rev. A, 21-Jun-04 www.vishay.com 5